My Inquiry
My Account
Texas Instruments CSD18510KTTT
- Part No.:
- CSD18510KTTT
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
- Datasheet:
-
CSD18510KTTT.pdf
- Description:
- MOSFET N-CH 40V 274A DDPAK
- Quantity:
- Payment:
- Shipping:
Inventory:308
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CSD18510KTTT from Texas Instruments is a 40V N-channel NexFET™ power MOSFET in D2PAK (TO-263) package, designed for high-efficiency power conversion. It delivers 1.4 mΩ RDS(on) at VGS = 10 V, 119 nC total gate charge, and 200 A continuous drain current (package-limited), serving as a low-loss synchronous rectifier or motor drive switch.
For engineers reviewing the CSD18510KTTT datasheet, CSD18510KTTT pinout, CSD18510KTTT application, or CSD18510KTTT equivalent, key selection criteria include ultra-low Qg/Qgd, avalanche rating, thermal resistance of 0.6 °C/W (junction-to-case), and compatibility with high-current, high-frequency switching topologies.
Technical Context
This MOSFET employs a silicon-based planar trench process optimized for minimizing conduction and switching losses in DC-DC converters and motor drives. Its gate threshold voltage of 1.7 V (typical) enables robust 4.5 V logic-level drive, while its 21 nC Qgd ensures fast, controlled turn-off with reduced Miller-induced shoot-through risk.
The device features an integrated body diode with 0.85 V forward voltage at 100 A and 70 nC reverse recovery charge, supporting efficient synchronous rectification. Its 328 mJ single-pulse avalanche energy rating confirms ruggedness under unclamped inductive switching conditions typical in motor control and power supply fault scenarios.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 36 V nominal bus systems and 12/24 V industrial supplies. |
| RDS(on) | 1.4 mΩ @ VGS = 10 V - Enables <1.4 W conduction loss at 100 A, critical for high-current output stages. |
| Qg | 119 nC @ 10 V - Low gate charge reduces driver power demand and supports >500 kHz switching in hard-switched converters. |
| Qgd | 21 nC - Minimizes Miller plateau duration, improving switching controllability and EMI performance. |
| RθJC | 0.6 °C/W - Enables direct heatsink mounting with minimal thermal interface resistance for 250 W power dissipation. |
| ID (cont) | 200 A - Package-limited continuous current supports high-power motor phase legs and secondary-side rectifiers. |
| EAS | 328 mJ - Avalanche-rated for reliable operation during transient overvoltage events without external snubbers. |
Pinout & Package
D2PAK (TO-263) thermally enhanced plastic package with exposed drain pad; 3-terminal configuration (Drain, Gate, Source); RoHS-compliant tin plating; MSL Level-2-260°C-1 year.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control input | Receives PWM signal to modulate channel conduction; requires low-impedance driver due to 119 nC Qg. |
| Pin 2 (Drain) | High-side power node | Connected to switched bus voltage; electrically tied to exposed thermal pad for heat transfer and current return path. |
| Pin 3 (Source) | Power return / reference | Serves as common reference for gate drive and current sensing; must be low-inductance layout to minimize switching noise. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low Qg and Qgd | Reduces gate driver losses and improves switching efficiency above 300 kHz in buck and half-bridge topologies. |
| Low thermal resistance (RθJC = 0.6 °C/W) | Allows direct attachment to heatsinks without thermal vias, simplifying thermal design for 200 A continuous loads. |
| Avalanche rated (EAS = 328 mJ) | Eliminates need for external clamping circuits in motor drive H-bridges and flyback snubberless designs. |
| D2PAK plastic package with exposed drain pad | Provides mechanical robustness and superior thermal performance versus SO-8 or PowerPAK, enabling higher power density. |
| Lead-free and halogen-free construction | Meets IPC-J-STD-609 Class 1 requirements for green electronics manufacturing and end-of-life recyclability. |
Applications
| Secondary-Side Synchronous Rectifier | Brushless DC Motor Drive |
|---|---|
Use Scenario: High-efficiency 12 V–48 V output stage in isolated DC-DC converters for telecom and server PSUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve thermal margin. Use Value: Achieves >95% efficiency at full load by cutting rectifier loss from ~2.5 W to <1.4 W at 100 A output. |
Use Scenario: Phase-leg switch in 3-phase BLDC inverters for industrial pumps and HVAC compressors. IC Role / Device Role / Timing Role: High-current, high-dV/dt power switch operating at 20–50 kHz PWM frequency with precise dead-time control. Use Value: Supports 200 A peak phase current with <1.4 mΩ on-resistance, reducing I²R heating and enabling compact heatsink design. |
| DC-DC Buck Converter Output Stage | Uninterruptible Power Supply (UPS) Inverter |
Use Scenario: 40 V input, 12 V output point-of-load converter in automotive ADAS ECUs and battery management systems. IC Role / Device Role / Timing Role: High-side switch in synchronous buck topology requiring fast turn-on and low Qgd-driven dV/dt control. Use Value: 21 nC Qgd minimizes Miller-induced delay, enabling stable 1 MHz operation with tight duty-cycle resolution. |
Use Scenario: Half-bridge leg in 48 V–350 V DC-AC inverter for line-interactive UPS and solar hybrid inverters. IC Role / Device Role / Timing Role: Hard-switched power switch handling bidirectional current and repetitive avalanche stress during grid sync transitions. Use Value: 328 mJ EAS rating ensures reliable operation during line dropouts and zero-crossing commutation without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1407PBF | RDS(on) = 4.8 mΩ @ 10 V; Qg = 120 nC; TO-220 package; RθJC = 1.0 °C/W | Higher conduction loss and thermal resistance limit usable current to ~120 A continuous; less suitable for >300 kHz switching. | Select when cost sensitivity outweighs efficiency and thermal constraints, or when TO-220 footprint is required. |
| STL220N4F7AG | RDS(on) = 1.35 mΩ @ 10 V; Qg = 132 nC; PowerFLAT 8x8 HV package; no exposed drain pad | Lower RDS(on) but higher Qg increases driver loss; surface-mount-only thermal path limits heatsinking flexibility. | Prefer for space-constrained PCBs where D2PAK assembly is impractical, accepting trade-offs in thermal management and driver complexity. |
Compared with IRF1407PBF and STL220N4F7AG, the CSD18510KTTT offers the best balance of ultra-low Qgd, industry-leading RθJC, and proven avalanche ruggedness-making it optimal for high-reliability, high-power-density motor and power supply designs where thermal headroom and switching speed are critical.
Availability
CSD18510KTTT is available at Aetrix Electronics and suitable for high-current motor control, synchronous rectification, and industrial DC-DC converter applications requiring stable component supply and long-term production continuity.
Supply support for CSD18510KTTT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-reliability power devices.
The CSD18510KTTT belongs to TI's NexFET™ power MOSFET product line, engineered specifically for minimizing conduction and switching losses in high-efficiency, high-current power conversion systems.
FAQ
What is the maximum continuous drain current rating for the CSD18510KTTT?
The CSD18510KTTT has a package-limited continuous drain current (ID) of 200 A at TA = 25°C. This rating assumes proper PCB thermal management via the exposed drain pad and is distinct from the silicon-limited 274 A (at TC = 25°C) and 193 A (at TC = 100°C) values specified in the Absolute Maximum Ratings table.
Does the CSD18510KTTT support 4.5 V logic-level gate drive?
Yes, the CSD18510KTTT is fully compatible with 4.5 V gate drive: its RDS(on) is specified at 2.0 mΩ (typical) under VGS = 4.5 V and ID = 100 A, and its gate threshold voltage (VGS(th)) ranges from 1.4 V to 2.3 V, ensuring strong enhancement-mode turn-on with standard microcontroller GPIO outputs.
What is the thermal resistance from junction to case (RθJC) for the CSD18510KTTT?
The CSD18510KTTT has a typical junction-to-case thermal resistance (RθJC) of 0.6 °C/W, measured under pulsed conditions with max RθJC ≤ 0.6 °C/W. This value is validated per JEDEC standards and enables direct heatsink mounting for dissipating up to 250 W with minimal temperature rise across the die-to-heatsink interface.
Is the CSD18510KTTT avalanche-rated, and what is its single-pulse energy rating?
Yes, the CSD18510KTTT is fully avalanche-rated with a single-pulse avalanche energy (EAS) of 328 mJ, tested under standardized conditions of ID = 81 A, L = 0.1 mH, and RG = 25 Ω. This rating confirms robustness against inductive switching transients in motor drive and power supply applications without external protection.
What package type and pin configuration does the CSD18510KTTT use?
The CSD18510KTTT uses the D2PAK (TO-263) plastic package with three terminals: Pin 1 = Gate, Pin 2 = Drain (electrically connected to the exposed thermal pad), and Pin 3 = Source. The package is RoHS-exempt, lead-free, halogen-free, and rated MSL Level-2-260°C-1 year.
CSD18510KTTT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- NexFET™
- Package/Case:
- TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 274A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.6mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 132 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 11400 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (DDPAK-3)
CSD18510KTTT FAQ
1.How can I place an order for CSD18510KTTT through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD18510KTTT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD18510KTTT reliable?
The price and inventory of CSD18510KTTT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD18510KTTT is usually 5 days.
3.What payment methods are accepted for CSD18510KTTT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD18510KTTT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD18510KTTT?
CSD18510KTTT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD18510KTTT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD18510KTTT?
For technical support, including CSD18510KTTT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD18510KTTT requirements.
6.How does Aetrix verify that CSD18510KTTT is sourced from the original manufacturer or authorized distributors?
All CSD18510KTTT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD18510KTTT meets industry standards.
7.What is the process for return or replacement of CSD18510KTTT?
All CSD18510KTTT units undergo pre-shipment inspection (PSI). If there is an issue with CSD18510KTTT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD18510KTTT part is unused and in its original packaging.
Return procedure for CSD18510KTTT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CSD18510KTTT Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
