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Texas Instruments CSD18511KTTT
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- Part No.:
- CSD18511KTTT
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
CSD18511KTTT.pdf
- Description:
- MOSFET N-CH 40V 110A/194A DDPAK
- Quantity:
- Payment:
- Shipping:
Inventory:554
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Product details
Overview
CSD18511KTTT from Texas Instruments is a 40V N-Channel NexFET™ Power MOSFET in D2PAK (TO-263) package, designed for high-efficiency power conversion with RDS(on) = 2.1 mΩ at VGS = 10 V, Qg = 63.9 nC, and avalanche-rated operation. It serves as a low-loss switching element in secondary-side synchronous rectification and motor control circuits.
For engineers reviewing the CSD18511KTTT datasheet, CSD18511KTTT pinout, CSD18511KTTT application, or CSD18511KTTT equivalent, key selection criteria include its 110 A continuous drain current (package-limited), 0.8 °C/W junction-to-case thermal resistance, and D2PAK thermal pad layout compatibility - critical for high-current, thermally constrained DC/DC and motor drive designs.
Technical Context
This MOSFET employs a silicon-based planar trench process optimized for low gate charge and minimal conduction loss. Its RDS(on) remains stable across VGS = 4.5 V to 10 V, enabling robust operation with standard logic-level and 12 V gate drivers.
The device features an integrated body diode with VSD = 0.9 V at 100 A and Qrr = 62 nC, supporting fast, low-loss reverse recovery in synchronous rectifier topologies. Thermal design leverages the exposed thermal pad and low RθJC, requiring PCB copper area and optional vias per TI's SLMA002/SLMA004 guidelines.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 36 V nominal bus systems with margin |
| RDS(on) | 2.1 mΩ @ VGS = 10 V - Enables <1.1 W conduction loss at 100 A, reducing heatsink requirements |
| Qg | 63.9 nC - Low total gate charge minimizes driver power and switching transition time |
| ID (cont) | 110 A (package-limited) - Supports high-current output stages without paralleling devices |
| RθJC | 0.8 °C/W - Enables direct thermal coupling to heatsink via exposed drain pad, critical for >100 W dissipation |
| EAS | 156 mJ - Rated unclamped inductive avalanche energy supports robustness in motor phase-leg switching |
| VGS(th) | 1.8 V (typ) - Ensures reliable turn-on with 3.3 V or 5 V logic-level gate drivers |
Pinout & Package
D2PAK (TO-263) plastic package with exposed thermal pad on underside; 3-pin configuration (Pin 1: Gate, Pin 2: Drain, Pin 3: Source); RoHS-exempt tin-lead plating; MSL Level-2-260°C-1 year.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control terminal | Accepts 0–20 V gate drive; low Qgd (9.7 nC) reduces Miller-induced switching delay and shoot-through risk |
| Pin 2 (Drain) | Main power output node | Internally connected to exposed thermal pad; must be soldered to large PCB copper pour for thermal management |
| Pin 3 (Source) | Reference and return path | Serves as local ground reference for gate drive loop; low-inductance layout essential for EMI and stability |
Key Features
| Feature | Design Value |
|---|---|
| Low Qg and Qgd | 63.9 nC total / 9.7 nC gate-to-drain charge enables high-frequency (>500 kHz) switching with minimal driver loss |
| Low RDS(on) | 2.1 mΩ at 10 V ensures <2.1 W conduction loss at 100 A, directly improving system efficiency in 12–48 V converters |
| Low thermal resistance | 0.8 °C/W junction-to-case allows >150 W power dissipation with moderate heatsinking, eliminating need for forced air |
| Avalanche rated | 156 mJ single-pulse EAS provides intrinsic ruggedness against inductive switching transients in motor drives |
| D2PAK package | TO-263 outline with thermal pad supports automated reflow and high-current PCB routing; compatible with standard pick-and-place |
Applications
| Secondary-Side Synchronous Rectifier | Brushless DC Motor Control |
|---|---|
Use Scenario: High-efficiency 12 V–48 V isolated DC/DC converter in server PSUs or telecom rectifiers. IC Role / Device Role / Timing Role: Primary-side switch replacement for low-VF synchronous rectification in LLC or phase-shifted full-bridge topologies. Use Value: Replaces Schottky diodes to reduce conduction loss by >50 %, enabling >96 % peak efficiency at full load. |
Use Scenario: Half-bridge or 3-phase inverter stage driving 1–3 kW BLDC motors in industrial pumps or HVAC fans. IC Role / Device Role / Timing Role: Low-side or high-side switching element in motor phase-legs, operating at 20–100 kHz PWM. Use Value: Low RDS(on) and Qg minimize switching + conduction losses, allowing compact thermal design without derating at 100 °C ambient. |
| High-Current DC Power Distribution | Industrial PLC Output Stage |
Use Scenario: 48 V battery-powered equipment requiring hot-swap or load-switching with overcurrent protection. IC Role / Device Role / Timing Role: Main power FET in smart load switch IC or discrete eFuse circuit. Use Value: 110 A continuous rating and avalanche rating enable robust fault handling during short-circuit events without external crowbar. |
Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) digital output modules. IC Role / Device Role / Timing Role: Switching element controlling 24 V DC solenoid or indicator loads up to 5 A per channel. Use Value: Fast turn-on/turn-off (td(on) = 8 ns, tf = 3 ns) supports precise timing control and high channel density in modular I/O cards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | RDS(on) = 4.0 mΩ @ 10 V; Qg = 131 nC; TO-220 package; no avalanche rating | Higher conduction and switching loss; limited to lower-frequency (<100 kHz), lower-current applications | Lower-cost option where thermal headroom exists and avalanche robustness is not required |
| STL220N4F7AG | RDS(on) = 1.7 mΩ @ 10 V; Qg = 105 nC; PowerFLAT 8x8 package; 40 V rating | Superior RDS(on) but higher Qg; surface-mount only; no through-hole or heatsink-mount capability | Better for ultra-compact layouts where PCB space is constrained but thermal interface is via board only |
Compared with IRF1404PBF and STL220N4F7AG, the CSD18511KTTT delivers optimal balance of low RDS(on), low Qg, and D2PAK thermal manageability - making it preferred for high-power, high-reliability 40 V switching where both efficiency and ruggedness are mandatory.
Availability
CSD18511KTTT is available at Aetrix Electronics and suitable for high-current DC/DC converters, motor drive inverters, and industrial power distribution systems requiring stable component supply and long-term production continuity.
Supply support for CSD18511KTTT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-reliability power devices.
The CSD18511KTTT belongs to TI's NexFET™ Power MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in computing, industrial, and automotive applications.
FAQ
What is the maximum continuous drain current for CSD18511KTTT at 100°C case temperature?
The CSD18511KTTT supports 137 A continuous drain current at TC = 100°C, as specified in its Absolute Maximum Ratings table. This value reflects silicon-limited current under thermal equilibrium conditions and assumes proper PCB thermal design with the exposed drain pad fully soldered to a ≥200 mm² copper area.
Does CSD18511KTTT require a gate resistor for stable switching in a half-bridge configuration?
Yes - while the CSD18511KTTT has low Qgd (9.7 nC), a gate resistor (typically 2–10 Ω) is recommended to dampen ringing, control dV/dt, and prevent false turn-on due to Miller coupling. TI's evaluation boards use 4.7 Ω for 100 kHz operation with 12 V gate drive.
Can CSD18511KTTT be used in place of CSD18511KTT in the same PCB footprint?
Yes - CSD18511KTTT shares identical D2PAK (KTT) mechanical dimensions, pinout, and thermal pad layout with CSD18511KTT; the only difference is tape-and-reel packaging (50 vs. 500 units). No PCB or layout changes are needed for substitution.
What is the recommended PCB land pattern for CSD18511KTTT's thermal pad?
Texas Instruments recommends a symmetrical 7.48 mm × 8.55 mm exposed copper pad with 42 × 0.96 mm solder paste apertures (per SLMA004), 60.5 % coverage, and ≥6 thermal vias (0.3 mm diameter, filled/plugged) connecting to inner-layer ground planes to achieve ≤1.2 °C/W board-level thermal resistance.
Is CSD18511KTTT compliant with RoHS and REACH regulations?
The CSD18511KTTT is RoHS Exempt per TI's packaging addendum - meaning it contains lead in the terminal plating (SnPb) for enhanced solderability and reliability, exempted under Annex III of Directive 2011/65/EU. It meets REACH SVHC thresholds and carries full material declarations per TI's compliance portal.
CSD18511KTTT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- NexFET™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 110A (Ta), 194A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.6mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 64 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5940 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 188W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (DDPAK-3)
CSD18511KTTT FAQ
1.How can I place an order for CSD18511KTTT through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD18511KTTT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD18511KTTT reliable?
The price and inventory of CSD18511KTTT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD18511KTTT is usually 5 days.
3.What payment methods are accepted for CSD18511KTTT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD18511KTTT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD18511KTTT?
CSD18511KTTT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD18511KTTT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD18511KTTT?
For technical support, including CSD18511KTTT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD18511KTTT requirements.
6.How does Aetrix verify that CSD18511KTTT is sourced from the original manufacturer or authorized distributors?
All CSD18511KTTT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD18511KTTT meets industry standards.
7.What is the process for return or replacement of CSD18511KTTT?
All CSD18511KTTT units undergo pre-shipment inspection (PSI). If there is an issue with CSD18511KTTT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD18511KTTT part is unused and in its original packaging.
Return procedure for CSD18511KTTT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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