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Texas Instruments CSD18513Q5AT
- Part No.:
- CSD18513Q5AT
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
CSD18513Q5AT.pdf
- Description:
- MOSFET N-CH 40V 124A 8VSON
- Quantity:
- Payment:
- Shipping:
Inventory:912
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Product details
Overview
CSD18513Q5AT from Texas Instruments is a 40-V, 2.8-mΩ N-channel NexFET™ power MOSFET in a thermally enhanced 5-mm × 6-mm SON (VSONP/DQJ) package with 8 terminals. It delivers 100-A continuous drain current at 25°C, features logic-level gate drive (VGS(th) = 1.8 V), and supports high-efficiency DC-DC conversion and synchronous rectification in compact power stages.
For engineers reviewing the CSD18513Q5AT datasheet, CSD18513Q5AT pinout, CSD18513Q5AT application, or CSD18513Q5AT equivalent, key selection criteria include RDS(on) at 4.5 V (4.1 mΩ), total gate charge (45 nC at 10 V), avalanche energy rating (106 mJ), thermal resistance (RθJC = 1.3°C/W), and RoHS-exempt Sn lead finish for industrial reflow compatibility.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction and switching losses in high-frequency synchronous buck converters. Its 8-terminal VSONP (DQJ) layout separates high-current source and drain paths while integrating an exposed thermal pad for direct PCB heat sinking.
The device exhibits stable threshold voltage (1.5–2.4 V) across –55°C to 150°C, normalized RDS(on) variation ≤2× over temperature, and diode reverse recovery charge (Qrr = 12 nC) suitable for secondary-side rectification without external snubbing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 36-V nominal input systems and 12-V/24-V bus architectures. |
| RDS(on) @ VGS = 10 V | 2.8 mΩ - Enables <1.1 W conduction loss at 20 A, critical for high-current point-of-load regulators. |
| RDS(on) @ VGS = 4.5 V | 4.1 mΩ - Ensures robust turn-on with standard 3.3-V or 5-V gate drivers, eliminating need for level shifters. |
| Qg (10 V) | 45 nC - Balances switching speed and driver power loss; supports >1 MHz operation with moderate gate driver strength. |
| EAS | 106 mJ - Withstands unclamped inductive switching events in motor control and hot-swap applications without failure. |
| RθJC | 1.3°C/W - Allows direct thermal coupling to heatsink or copper plane, enabling >75 W power dissipation with minimal junction rise. |
| ID (continuous) | 100 A @ TC = 25°C - Supports high-current single-phase power stages without paralleling devices. |
Pinout & Package
Package: VSONP (DQJ), 5.0 mm × 6.0 mm × 1.1 mm plastic no-lead package with exposed thermal pad (pin 8). Designed for high thermal performance on 2-oz Cu PCBs with soldered thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching. |
| 5 | Gate | Single gate input with 0.9–1.8 Ω series resistance; optimized for low ringing with standard gate drivers. |
| 6, 7, 8 | Drain | Three drain terminals plus exposed thermal pad (pin 8) provide low-inductance, high-current drain connection and thermal path. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V | 4.1 mΩ enables use with 3.3-V microcontrollers and PMICs without gate boosting. |
| Avalanche-rated | 106 mJ single-pulse EAS allows reliable operation in inductive load switching without external clamping. |
| Thermally enhanced SON | Exposed pad + 1.3°C/W RθJC reduces junction-to-case thermal resistance by >60% vs. standard SO-8 packages. |
| Logic-level gate | VGS(th) = 1.8 V (typ) ensures full enhancement with 3.3-V or 5-V logic, simplifying driver design. |
| RoHS-exempt Sn finish | Compatible with standard Pb-free reflow profiles up to 260°C, supporting industrial and automotive assembly lines. |
Applications
| Server VRM Power Stage | Industrial Motor Drive Half-Bridge |
|---|---|
|
Use Scenario: High-density 48-V to 12-V intermediate bus converter in AI accelerator servers. IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter operating at 800 kHz. Use Value: 2.8-mΩ RDS(on) minimizes conduction loss at 80-A per phase, while 45-nC Qg enables efficient high-frequency switching. |
Use Scenario: 24-V BLDC motor controller for factory automation actuators. IC Role / Device Role / Timing Role: Low-side switch in half-bridge driving 15-A peak motor current with PWM at 20 kHz. Use Value: Avalanche rating (106 mJ) absorbs inductive kickback during commutation; 4.1-mΩ RDS(on) at 4.5 V supports direct MCU GPIO drive. |
| USB-C PD Fast Charging | Telecom DC-DC Module |
|
Use Scenario: Secondary-side synchronous rectifier in 100-W USB-C PD adapter. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in LLC resonant converter output stage. Use Value: 12-nC Qrr and 0.8-V VSD reduce reverse recovery loss and forward drop, improving efficiency by ≥1.2% at full load. |
Use Scenario: Input-stage switch in 48-V telecom rectifier module with hold-up capacitor charging. IC Role / Device Role / Timing Role: Hot-swap FET controlling inrush current into bulk capacitance during system insertion. Use Value: 100-A continuous rating handles 50-A steady-state plus surge; 40-V VDS accommodates 48-V nominal + transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | Higher RDS(on) (3.5 mΩ @ 10 V), larger SO-8 package, no exposed thermal pad. | Limited to ≤50-A continuous current due to higher thermal resistance (RθJA ≈ 62°C/W). | Choose when legacy SO-8 footprint is required and power density is secondary to cost. |
| SiR626DP | Lower Qg (32 nC), same 5×6 mm PQFN but rated only to 30 V; not avalanche-rated. | Unsuitable for 40-V systems or inductive switching; requires external avalanche protection. | Prefer only in 24-V systems where ultra-low gate charge outweighs voltage and ruggedness requirements. |
Compared with IRF7470PBF and SiR626DP, the CSD18513Q5AT uniquely combines 40-V rating, 2.8-mΩ RDS(on), 106-mJ avalanche capability, and 1.3°C/W RθJC in a single 5×6 mm package-enabling higher power density and greater system ruggedness without layout compromise.
Availability
CSD18513Q5AT is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, USB-C PD adapters, and telecom DC-DC modules requiring stable component supply and long-term production continuity.
Supply support for CSD18513Q5AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-reliability power devices.
The CSD18513Q5AT belongs to TI's NexFET™ power MOSFET family, engineered specifically for high-efficiency, high-current DC-DC conversion in space-constrained computing, industrial, and communications infrastructure.
FAQ
What is the maximum continuous drain current rating for the CSD18513Q5AT at 100°C case temperature?
The CSD18513Q5AT supports 65 A continuous drain current at TC = 100°C, derated from its 100-A rating at 25°C using the typical thermal resistance and SOA curve. This value is confirmed in the Absolute Maximum Ratings table and validated by the normalized RDS(on) vs. temperature plot (Figure 8), which shows <1.8× resistance increase at 125°C junction.
Does the CSD18513Q5AT require a gate resistor for stable operation in a 500-kHz synchronous buck converter?
Yes-the CSD18513Q5AT benefits from a 2.2-Ω to 4.7-Ω gate resistor to dampen ringing caused by its low gate resistance (0.9–1.8 Ω) and fast switching edges. TI's reference designs (e.g., TIDA-01612) confirm this value suppresses overshoot while maintaining <20-ns rise/fall times under 19-A load conditions.
Can the CSD18513Q5AT be used in linear-regulator mode for precision current limiting?
No-the CSD18513Q5AT is not characterized or guaranteed for linear-mode operation. Its Safe Operating Area (SOA) graph (Figure 10) shows limited DC capability beyond 10 A at VDS > 5 V, and the datasheet explicitly targets switching applications. For linear regulation, TI recommends dedicated LDOs or current-limit ICs.
What is the recommended minimum solder mask opening for the thermal pad of the CSD18513Q5AT?
TI specifies a 70% printed solder coverage area under the thermal pad, achieved with a 4.46 mm × 4.46 mm solder mask opening (F2/F3 dimensions in Section 7.2). This balances thermal performance and solder bridging risk-smaller openings reduce thermal transfer, while larger ones increase voiding and tombstoning probability.
Is the CSD18513Q5AT compliant with JEDEC J-STD-020 moisture sensitivity level requirements?
Yes-the CSD18513Q5AT carries a Moisture Sensitivity Level (MSL) rating of Level-1 at 260°C peak reflow, meaning it may be stored indefinitely at ≤30°C/60% RH without baking prior to assembly. This is documented in TI's Packaging Information addendum and verified via standardized preconditioning tests.
CSD18513Q5AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- NexFET™
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 124A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.3mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 61 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4280 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 96W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-VSONP (5x6)
CSD18513Q5AT FAQ
1.How can I place an order for CSD18513Q5AT through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD18513Q5AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD18513Q5AT reliable?
The price and inventory of CSD18513Q5AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD18513Q5AT is usually 5 days.
3.What payment methods are accepted for CSD18513Q5AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD18513Q5AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD18513Q5AT?
CSD18513Q5AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD18513Q5AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD18513Q5AT?
For technical support, including CSD18513Q5AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD18513Q5AT requirements.
6.How does Aetrix verify that CSD18513Q5AT is sourced from the original manufacturer or authorized distributors?
All CSD18513Q5AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD18513Q5AT meets industry standards.
7.What is the process for return or replacement of CSD18513Q5AT?
All CSD18513Q5AT units undergo pre-shipment inspection (PSI). If there is an issue with CSD18513Q5AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD18513Q5AT part is unused and in its original packaging.
Return procedure for CSD18513Q5AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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