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Texas Instruments CSD18514Q5AT

Part No.:
CSD18514Q5AT
Manufacturer:
Texas Instruments
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixCSD18514Q5AT.pdf
Description:
MOSFET N-CH 40V 89A 8VSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,737

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Product details

Overview

CSD18514Q5AT from Texas Instruments is a 40-V, 5.0-mm × 6.0-mm SON-packaged N-channel NexFET™ power MOSFET with 4.1 mΩ RDS(on) at VGS = 10 V, 29 nC total gate charge, and logic-level gate drive compatibility. It serves as a high-efficiency synchronous rectifier or primary-side switch in DC-DC converters operating up to 150°C junction temperature.

For engineers reviewing the CSD18514Q5AT datasheet, CSD18514Q5AT pinout, CSD18514Q5AT application, or CSD18514Q5AT equivalent, key selection criteria include its low thermal resistance (RθJC = 1.7°C/W), avalanche-rated capability (55 mJ), and validated performance at 14 A continuous drain current under 125°C case conditions.

Technical Context

This device employs a silicon-based planar trench MOSFET structure optimized for fast switching and minimal conduction loss in high-frequency power stages. Its gate threshold voltage of 1.8 V (typ) enables direct interfacing with 3.3-V and 5-V controllers without level-shifting circuitry.

The 8-pin VSONP (DQJ) package integrates an exposed thermal pad for efficient heat transfer to the PCB, supporting high-current operation with RθJA = 50°C/W on a 1-in² 2-oz copper pad. Dynamic characteristics-including 5.0 nC Qgd, 6.0 nC Qgs, and 22 ns rise time-are specified at VDS = 20 V and ID = 14 A.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 40 V - Maximum blocking voltage for 12-V and 24-V input DC-DC topologies
RDS(on) @ VGS = 10 V 4.1 mΩ - Enables ≤1.0 W conduction loss at 14 A, critical for high-efficiency synchronous rectification
Qg (total) 29 nC - Determines gate driver power requirement and switching loss in 300–1000 kHz converters
VGS(th) 1.8 V (typ) - Ensures reliable turn-on with standard logic-level PWM controllers
ID (continuous, TC = 25°C) 89 A - Silicon-limited rating confirming robustness under short-duration peak loads
EAS 55 mJ - Specifies single-pulse avalanche energy handling for inductive switching stress
RθJC 1.7°C/W - Enables direct thermal coupling to heatsink or copper plane for high-power density designs

Pinout & Package

The CSD18514Q5AT uses an 8-pin VSONP (DQJ) plastic package measuring 5.0 mm × 6.0 mm × 1.1 mm max height, featuring an exposed thermal pad (pins 1–4 and 5–8 are source/drain terminals; pin 5 is gate).

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4, 7, 8 Source Low-impedance parallel connection to PCB ground plane; shares thermal path via exposed pad
5 Gate Control terminal requiring <29 nC charge for full enhancement; sensitive to ESD (max ±20 V)
6 Drain Main power output node; electrically isolated from package body; connects to high-side or low-side switch node

Key Features

Feature Design Value
Low RDS(on) 4.1 mΩ at 10 V gate drive reduces conduction losses by >30% versus comparable 40-V MOSFETs in 12-V buck converters
Avalanche rated 55 mJ single-pulse energy tolerance allows safe operation during unclamped inductive switching events
Logic-level gate 1.8 V threshold enables direct drive from microcontrollers or PWM ICs without external level shifters
SON 5-mm × 6-mm package Thermally enhanced layout with exposed pad delivers 1.7°C/W junction-to-case resistance for compact thermal design
RoHS/halogen-free Complies with IPC-1752A material declaration requirements for industrial and automotive supply chains

Applications

DC-DC Buck Converter Secondary-Side Synchronous Rectifier

Use Scenario: High-efficiency 12-V to 1.2-V point-of-load converter in server VRMs.

IC Role / Device Role / Timing Role: Low-side switch with 500-kHz PWM frequency and 14-A continuous current.

Use Value: 4.1 mΩ RDS(on) minimizes I²R loss, enabling >94% efficiency at full load while maintaining TJ ≤ 125°C.

Use Scenario: 48-V to 12-V isolated LLC resonant converter in telecom power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode on secondary winding.

Use Value: Logic-level gate and 29 nC Qg allow precise timing control with zero-voltage switching, reducing reverse recovery losses by 65%.

Battery Motor Control Industrial PLC Output Stage

Use Scenario: 24-V BLDC motor gate driver half-bridge in robotic actuators.

IC Role / Device Role / Timing Role: High-side or low-side switch in H-bridge with 10-A RMS phase current.

Use Value: Avalanche rating (55 mJ) protects against inductive kickback during rapid PWM commutation.

Use Scenario: Solid-state relay replacement in programmable logic controller digital output modules.

IC Role / Device Role / Timing Role: Load switch controlling 24-V solenoid or indicator LED banks.

Use Value: 89-A silicon-limited ID supports 3× surge current margin over 18-A package rating for industrial transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRLHS6342TRPBF RDS(on) = 5.2 mΩ @ 4.5 V; Qg = 22 nC; SO-8 package (larger footprint, higher RθJA) Lower gate charge improves switching efficiency but higher RDS(on) increases conduction loss above 10 A Prefer when board space allows SO-8 and gate drive voltage is limited to 4.5 V
DMTH4007LPSQ-13 RDS(on) = 4.5 mΩ @ 10 V; Qg = 34 nC; PowerDI 5060 package (no exposed thermal pad) Higher gate charge increases driver loss; no thermal pad limits power dissipation in compact layouts Choose only if legacy PowerDI footprint compatibility is required and thermal headroom exists

Compared with IRLHS6342TRPBF and DMTH4007LPSQ-13, the CSD18514Q5AT delivers superior thermal performance (1.7°C/W vs ≥3.5°C/W) and lower conduction loss at 14 A, making it optimal for space-constrained, high-current DC-DC and motor control designs where junction temperature must stay below 150°C.

Availability

CSD18514Q5AT is available at Aetrix Electronics and suitable for DC-DC conversion, battery motor control, and industrial PLC output stages requiring stable component supply across production lifecycles.

Supply support for CSD18514Q5AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, specializing in analog, embedded processing, and power management technologies for industrial, automotive, and communications markets.

The CSD18514Q5AT belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-frequency, high-efficiency power conversion in space-constrained applications such as server VRMs and telecom power supplies.

FAQ

What is the maximum continuous drain current for CSD18514Q5AT at 125°C case temperature?

The CSD18514Q5AT supports 18 A continuous drain current at TC = 125°C, as specified in the Absolute Maximum Ratings table. This derated value ensures safe operation under sustained thermal stress while maintaining RDS(on) ≤ 6.0 mΩ at VGS = 4.5 V. The 89-A rating applies only at TC = 25°C and reflects silicon capability-not package thermal limits.

Does CSD18514Q5AT require a gate resistor for ESD protection?

No-CSD18514Q5AT does not require an external gate resistor for ESD protection. However, TI recommends shorting gate-to-source during handling and storage, as the device has limited built-in ESD protection. A small series gate resistor (≤10 Ω) may be used to dampen ringing in high-speed switching applications but is not for ESD mitigation.

Can CSD18514Q5AT be used in avalanche mode repeatedly?

The CSD18514Q5AT is avalanche rated for single-pulse events (EAS = 55 mJ), but TI does not characterize or guarantee repetitive avalanche operation. Repeated avalanche stress degrades reliability and is not recommended in production designs. Use appropriate snubbers or clamping circuits to avoid entering avalanche during normal operation.

What is the recommended PCB land pattern for CSD18514Q5AT's thermal pad?

Texas Instruments specifies a 4.9 mm × 4.46 mm solder mask-defined land pattern for the exposed thermal pad of CSD18514Q5AT, with 8 thermal vias (0.3 mm diameter, 0.65 mm pitch). This layout achieves RθJA = 50°C/W on a 1-in² 2-oz copper pad and is documented in SLPS625A Section 7.2 and SLUA271.

Is CSD18514Q5AT compatible with lead-free reflow profiles?

Yes-CSD18514Q5AT carries a JEDEC Level-1 moisture sensitivity rating and is qualified for peak reflow temperatures up to 260°C, fully compliant with IPC/JEDEC J-STD-020. Its Sn (tin) lead finish and RoHS-exempt status confirm suitability for standard lead-free assembly processes without special baking or handling.

CSD18514Q5AT Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
NexFET™
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
89A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
40 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2683 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
74W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-VSONP (5x6)

CSD18514Q5AT FAQ

1.How can I place an order for CSD18514Q5AT through Aetrix?

Please submit a Request for Quotation (RFQ) for CSD18514Q5AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CSD18514Q5AT reliable?

The price and inventory of CSD18514Q5AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD18514Q5AT is usually 5 days.

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CSD18514Q5AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CSD18514Q5AT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CSD18514Q5AT?

For technical support, including CSD18514Q5AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD18514Q5AT requirements.

6.How does Aetrix verify that CSD18514Q5AT is sourced from the original manufacturer or authorized distributors?

All CSD18514Q5AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD18514Q5AT meets industry standards.

7.What is the process for return or replacement of CSD18514Q5AT?

All CSD18514Q5AT units undergo pre-shipment inspection (PSI). If there is an issue with CSD18514Q5AT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CSD18514Q5AT part is unused and in its original packaging.

Return procedure for CSD18514Q5AT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CSD18514Q5AT Tags

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