My Inquiry
My Account
Texas Instruments CSD18532NQ5B
- Part No.:
- CSD18532NQ5B
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
CSD18532NQ5B.pdf
- Description:
- MOSFET N-CH 60V 22A/100A 8VSON
- Quantity:
- Payment:
- Shipping:
Inventory:4,260
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CSD18532NQ5B from Texas Instruments is a 60-V, 2.7-mΩ N-channel NexFET™ power MOSFET in a thermally enhanced 5-mm × 6-mm VSON-CLIP (DNK) package, optimized for high-efficiency DC-DC conversion and synchronous rectification with 49-nC total gate charge and 0.8°C/W junction-to-case thermal resistance.
For engineers reviewing the CSD18532NQ5B datasheet, CSD18532NQ5B pinout, CSD18532NQ5B application, or CSD18532NQ5B equivalent, key selection criteria include its ultra-low Qgd (7.9 nC), avalanche-rated operation (360 mJ), and silicon-limited 151-A continuous drain current at TC = 25°C - critical for high-power-density motor control and isolated converter designs.
Technical Context
This device employs a trench-gate silicon process with copper-clip packaging to minimize RDS(on) and thermal impedance. Its gate threshold voltage (2.8 V typ) and transconductance (140 S) support fast switching in hard-switched and resonant topologies.
The MOSFET exhibits low output capacitance (Coss = 495–644 pF) and reverse transfer capacitance (Crss = 16–21 pF), enabling high-frequency operation up to 1 MHz while maintaining low switching losses. Diode characteristics include 0.8–1.0 V forward voltage at 25 A and 64 ns reverse recovery time.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - maximum blocking voltage for primary-side switch in 48-V input isolated converters |
| RDS(on) | 2.7 mΩ @ VGS = 10 V - enables <1.7 W conduction loss at 25 A, critical for >95% efficiency in 12-V/48-V DC-DC stages |
| Qg / Qgd | 49 nC / 7.9 nC - ultra-low gate drive energy reduces driver IC stress and EMI in high-frequency synchronous rectifiers |
| ID (silicon-limited) | 151 A @ TC = 25°C - supports high peak-current motor phases without derating when heatsinked |
| RθJC | 0.8°C/W - allows direct thermal coupling to heatsinks or PCB copper, enabling compact thermal design in space-constrained modules |
| EAS | 360 mJ - avalanche-rated for robustness against inductive switching transients in unclamped inductive loads |
| VGS(th) | 2.8 V typ - ensures reliable turn-on with standard 3.3-V or 5-V gate drivers without level-shifting |
Pinout & Package
Package: VSON-CLIP (DNK), 5.00 mm × 6.00 mm plastic package with exposed thermal pad; 8-pin surface-mount, lead-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Four parallel drain terminals tied internally to power die backside - reduce current density and parasitic inductance in high-di/dt paths |
| 5 | Gate (G) | Single gate input with 1.2–2.4 Ω series resistance - damps ringing and simplifies gate driver layout |
| 6, 7, 8 | Source (S) | Three-source terminals provide low-inductance return path for source current and improve thermal spreading to PCB |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low Qg and Qgd | 49 nC total / 7.9 nC gate-to-drain charge minimizes switching loss and dv/dt-induced shoot-through risk in half-bridge configurations |
| Low thermal resistance | 0.8°C/W junction-to-case enables >100 W power dissipation with minimal temperature rise using simple heatsinking |
| Avalanche rated | 360 mJ single-pulse avalanche energy ensures survivability during load dump or short-circuit events without external snubbers |
| NexFET™ trench silicon | Optimized cell structure delivers 2.7 mΩ RDS(on) at 10 V with stable performance across –55°C to 150°C junction range |
| SON 5-mm × 6-mm package | Exposed thermal pad and copper-clip construction reduce thermal impedance by 40% vs. standard QFN, improving long-term reliability |
Applications
| DC-DC Conversion | Secondary Side Synchronous Rectifier |
|---|---|
|
Use Scenario: High-efficiency 12-V to 1-V point-of-load converter in server VRMs. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 500 kHz with 10-V gate drive. Use Value: 2.7-mΩ RDS(on) and 49-nC Qg enable >94% efficiency at 100-A load while minimizing gate driver power and thermal footprint. |
Use Scenario: 48-V to 12-V isolated buck converter in telecom power supplies. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes in LLC topology. Use Value: 0.8-V diode forward voltage and 64-ns trr reduce conduction and recovery losses, increasing full-load efficiency by 1.2% over diode solutions. |
| Isolated Converter Primary Side Switch | Motor Control |
|
Use Scenario: 36-V input flyback or active clamp forward converter in industrial power adapters. IC Role / Device Role / Timing Role: Primary switch handling 60-V blocking and 25-A peak current with 300-V transient margin. Use Value: 60-V VDS rating and 360-mJ avalanche energy eliminate need for clamping circuits during line surges or transformer leakage spikes. |
Use Scenario: 24-V three-phase BLDC inverter for robotic joint actuators. IC Role / Device Role / Timing Role: Low-side switch in 20-kHz PWM-driven half-bridge leg with 151-A silicon-limited current capability. Use Value: 0.8°C/W RθJC and 140-S transconductance ensure stable operation under 100-A peak pulses without thermal runaway or gain collapse. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | Higher RDS(on) (3.2 mΩ @ 10 V), larger SO-8 package (RθJA = 62°C/W), no avalanche rating | Limited to lower-power DC-DC where thermal headroom exists; unsuitable for unclamped inductive switching | Choose only if legacy SO-8 footprint required and peak current < 60 A |
| SiR626DP | Lower Qg (39 nC) but higher RDS(on) (3.8 mΩ), same 5×6 mm PQFN package, 60-V rating | Better for ultra-high-frequency (>1 MHz) operation but sacrifices conduction efficiency above 30 A | Select when switching loss dominates over conduction loss in resonant topologies |
Compared with IRF7470PBF and SiR626DP, the CSD18532NQ5B offers the best balance of low RDS(on), low Qgd, and avalanche ruggedness in a thermally optimized 5×6 mm package - making it preferred for high-current, high-reliability motor drives and isolated converters where both conduction and switching losses must be minimized simultaneously.
Availability
CSD18532NQ5B is available at Aetrix Electronics and suitable for DC-DC conversion, motor control, and isolated converter applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and automotive-grade production.
Supply support for CSD18532NQ5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management technologies, with over 90 years of innovation in high-reliability components.
The CSD18532NQ5B belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion systems including server VRMs, telecom PSUs, and industrial motor drives.
FAQ
What is the maximum continuous drain current for CSD18532NQ5B at 25°C case temperature?
The CSD18532NQ5B supports 151 A continuous drain current when the case temperature is maintained at 25°C, based on silicon-limited rating. This value assumes adequate heatsinking and is distinct from the package-limited 100-A rating. The CSD18532NQ5B achieves this via low RDS(on) and copper-clip packaging that minimizes thermal bottlenecking between die and PCB.
Does CSD18532NQ5B have avalanche capability, and how is it specified?
Yes, the CSD18532NQ5B is avalanche rated with a single-pulse energy rating of 360 mJ under test conditions of ID = 85 A, L = 0.1 mH, and RG = 25 Ω. This specification confirms ruggedness against inductive switching transients without external protection. The CSD18532NQ5B datasheet includes SOA curves and unclamped inductive switching waveforms validating this rating.
What is the gate-to-source threshold voltage range for CSD18532NQ5B?
The CSD18532NQ5B has a gate-to-source threshold voltage (VGS(th)) range of 2.4 V to 3.4 V at TA = 25°C, with a typical value of 2.8 V. This ensures compatibility with standard 3.3-V logic-level gate drivers while providing sufficient noise margin to prevent spurious turn-on. The CSD18532NQ5B maintains stable VGS(th) across temperature, varying only from ~2.2 V at –55°C to ~3.2 V at 150°C.
How does the thermal performance of CSD18532NQ5B compare to standard QFN MOSFETs?
The CSD18532NQ5B achieves a junction-to-case thermal resistance (RθJC) of 0.8°C/W - approximately 40% lower than conventional 5×6 mm QFN MOSFETs - due to its copper-clip VSON-CLIP (DNK) construction. This allows more heat to be extracted directly through the exposed pad into the PCB or heatsink. The CSD18532NQ5B also specifies RθJA = 50°C/W on a 1-in² 2-oz Cu pad, enabling higher sustained power dissipation in compact layouts.
Can CSD18532NQ5B be used as a synchronous rectifier in a 48-V to 12-V LLC converter?
Yes, the CSD18532NQ5B is explicitly recommended for secondary-side synchronous rectification in isolated converters, including LLC topologies. Its 0.8–1.0 V diode forward voltage at 25 A, 64 ns reverse recovery time, and low Qrr (139 nC) reduce conduction and recovery losses versus Schottky diodes. The CSD18532NQ5B's low RDS(on) and fast switching characteristics make it ideal for high-efficiency 48-V to 12-V conversion with >96% full-load efficiency.
CSD18532NQ5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- NexFET™
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 22A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 64 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5340 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-VSON-CLIP (5x6)
CSD18532NQ5B FAQ
1.How can I place an order for CSD18532NQ5B through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD18532NQ5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD18532NQ5B reliable?
The price and inventory of CSD18532NQ5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD18532NQ5B is usually 5 days.
3.What payment methods are accepted for CSD18532NQ5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD18532NQ5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD18532NQ5B?
CSD18532NQ5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD18532NQ5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD18532NQ5B?
For technical support, including CSD18532NQ5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD18532NQ5B requirements.
6.How does Aetrix verify that CSD18532NQ5B is sourced from the original manufacturer or authorized distributors?
All CSD18532NQ5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD18532NQ5B meets industry standards.
7.What is the process for return or replacement of CSD18532NQ5B?
All CSD18532NQ5B units undergo pre-shipment inspection (PSI). If there is an issue with CSD18532NQ5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD18532NQ5B part is unused and in its original packaging.
Return procedure for CSD18532NQ5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CSD18532NQ5B Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
