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Texas Instruments CSD18532NQ5BT
- Part No.:
- CSD18532NQ5BT
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
CSD18532NQ5BT.pdf
- Description:
- MOSFET N-CH 60V 100A 8VSON
- Quantity:
- Payment:
- Shipping:
Inventory:4,629
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Product details
Overview
CSD18532NQ5BT from Texas Instruments is a 60-V, 2.7-mΩ N-channel NexFET™ power MOSFET in an 8-pin VSON-CLIP (DNK) package, optimized for high-efficiency DC-DC conversion and synchronous rectification with 49-nC total gate charge, 7.9-nC gate-to-drain charge, and avalanche-rated operation up to 360 mJ.
For engineers reviewing the CSD18532NQ5BT datasheet, CSD18532NQ5BT pinout, CSD18532NQ5BT application, or CSD18532NQ5BT equivalent, key selection criteria include its low RDS(on) at 10 V (2.7 mΩ), thermal resistance (RθJC = 0.8°C/W), 100-A continuous drain rating, and compatibility with high-frequency switching topologies requiring fast turn-on/turn-off times (td(on) = 8.2 ns, tf = 2.7 ns).
Technical Context
This MOSFET employs a silicon-based planar trench structure with copper-clip packaging to minimize parasitic inductance and enhance thermal conduction from die to exposed drain pad. Its ultra-low Qgd/Qg ratio (7.9/49 nC ≈ 16%) supports high dV/dt immunity and reduced switching losses in hard-switched converters.
The device operates with a gate threshold voltage of 2.8 V (typical), enabling robust drive with standard 5-V or 10-V controllers, and features integrated body diode with 0.8–1.0 V forward voltage at 25 A and 139-nC reverse recovery charge-critical for synchronous rectifier efficiency in isolated flyback and LLC designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 48-V input bus systems and 36-V industrial rails. |
| RDS(on) @ VGS = 10 V | 2.7 mΩ - Enables <1.7 W conduction loss at 25 A, supporting high-current output stages without forced air cooling. |
| Qg (total) | 49 nC - Low gate drive energy reduces controller loading and allows use with standard gate drivers (e.g., UCC27531). |
| Qgd | 7.9 nC - Minimizes Miller plateau duration, improving switching speed and reducing overlap loss in hard-switched SMPS. |
| RθJC | 0.8°C/W - Enables >150 W power dissipation with modest heatsinking when mounted on 1-in² 2-oz Cu PCB. |
| EAS | 360 mJ - Avalanche-rated for unclamped inductive switching, supporting robust operation in motor control and relay drive. |
| ID (continuous) | 100 A - Package-limited current rating suitable for high-power POL converters and battery protection circuits. |
Pinout & Package
Package: VSON-CLIP (DNK), 5.0 mm × 6.0 mm × 1.0 mm, thermally enhanced with exposed drain pad (pins 1–4 and 5–8 connected internally to drain).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain | High-current power path; electrically and thermally tied to exposed bottom pad for low-inductance, high-conductivity connection. |
| 5 | Gate | Control input; requires 10-V drive for full enhancement; gate leakage <100 nA ensures low quiescent power in standby. |
| 6, 7, 8 | Source | Power return path; pins 6–8 are source terminals only-no internal drain connection-to minimize source inductance in high-di/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low Qgd/Qg ratio | 16% - Reduces Miller-induced shoot-through risk and enables >1-MHz switching in GaN-complementary topologies. |
| Low RθJC | 0.8°C/W - Allows direct thermal coupling to heatsink or PCB copper, eliminating need for thermal vias in compact layouts. |
| Avalanche energy rating | 360 mJ - Supports reliable operation during transient overloads without external snubbers in motor gate drivers. |
| RoHS/halogen-free construction | Compliant with IPC-1752A Class 2 reporting - meets automotive PPAP and industrial environmental compliance requirements. |
| SON 5×6 mm footprint | Standardized land pattern per TI M0138-01 - enables drop-in replacement across TI's NexFET™ 60-V family (e.g., CSD18533Q5B). |
Applications
| DC-DC Buck Converter | Synchronous Rectifier |
|---|---|
|
Use Scenario: 12-V to 1-V, 60-A point-of-load converter in server VRMs. IC Role / Device Role / Timing Role: High-side switch with 500-kHz PWM, driven by multiphase controller (e.g., TPS53688). Use Value: 2.7-mΩ RDS(on) cuts conduction loss by 35% vs. legacy 4-mΩ MOSFETs, enabling >94% peak efficiency at full load. |
Use Scenario: Secondary-side rectification in 65-W USB-PD adapter with active clamp flyback. IC Role / Device Role / Timing Role: Synchronous rectifier controlled by dedicated SR controller (e.g., UCC24612) with adaptive timing. Use Value: 0.8-V VSD and 139-nC Qrr reduce forward and reverse recovery losses, increasing efficiency by 1.2% at 25-A output. |
| Isolated Primary Switch | Brushless DC Motor Driver |
|
Use Scenario: 36-V input, 100-W isolated forward converter for industrial sensors. IC Role / Device Role / Timing Role: Primary-side main switch operating at 250 kHz with zero-voltage switching assist. Use Value: 7.9-nC Qgd minimizes dead-time sensitivity and improves ZVS margin, reducing EMI and transformer stress. |
Use Scenario: Half-bridge leg in 24-V, 300-W BLDC driver for HVAC blowers. IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter, commutated via 20-kHz PWM with bootstrap gate drive. Use Value: Avalanche rating (360 mJ) withstands inductive kickback during phase reversal, eliminating need for external TVS clamps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CSD18533Q5B | Same 60-V rating but higher RDS(on) (3.2 mΩ @ 10 V); identical Qg (49 nC) and package. | Lower current density; suited for cost-sensitive 50-A designs where thermal margin exceeds requirement. | Select when BOM cost reduction is prioritized over peak efficiency at >75-A loads. |
| IRF7759L2TRPBF | 60-V, 3.0-mΩ (10 V), 56-nC Qg, SO-8 package; higher RθJA (62°C/W) and no avalanche rating. | Limited to non-avalanche applications below 60-A; requires larger PCB area and additional thermal management. | Choose only for legacy SO-8 board reuse; avoid in new designs requiring high reliability or high-frequency operation. |
Compared with CSD18532NQ5BT, CSD18533Q5B trades 0.5-mΩ higher on-resistance for lower unit cost in mid-power applications, while IRF7759L2TRPBF lacks avalanche ruggedness and thermal performance-making CSD18532NQ5BT the optimal choice for high-reliability, high-density 60-V power stages.
Availability
CSD18532NQ5BT is available at Aetrix Electronics and suitable for DC-DC conversion, synchronous rectification, and motor control applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and embedded OEM programs.
Supply support for CSD18532NQ5BT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management ICs, with decades of expertise in high-efficiency power conversion technologies.
CSD18532NQ5BT belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-frequency, high-current switching applications in data center, industrial, and automotive power systems.
FAQ
What is the maximum continuous drain current rating for CSD18532NQ5BT at 25°C case temperature?
The CSD18532NQ5BT has a silicon-limited continuous drain current of 151 A at TC = 25°C, but its package-limited rating is 100 A under standard PCB mounting conditions. This 100-A value reflects real-world thermal constraints when using a 1-in² 2-oz copper pad, making it the design-relevant limit for most applications. The CSD18532NQ5BT datasheet specifies both values to clarify the distinction between theoretical die capability and practical board-level performance.
Does CSD18532NQ5BT support gate drive voltages below 10 V, and what is its RDS(on) at 6 V?
Yes, the CSD18532NQ5BT is fully specified for 6-V gate drive, delivering a typical RDS(on) of 3.5 mΩ at VGS = 6 V and ID = 25 A. This enables compatibility with 5-V logic-level controllers and simplifies level-shifting requirements in multi-rail systems. The threshold voltage (VGS(th)) is 2.8 V (typical), ensuring strong enhancement well within standard 3.3-V or 5-V microcontroller GPIO ranges.
How does the avalanche energy rating of CSD18532NQ5BT impact system-level reliability?
The CSD18532NQ5BT is rated for 360 mJ single-pulse avalanche energy (ID = 85 A, L = 0.1 mH, RG = 25 Ω), which directly enhances system robustness against inductive switching transients in motor drives and relay control. This specification means the CSD18532NQ5BT can absorb defined energy spikes without failure-reducing or eliminating the need for external snubber networks and improving long-term field reliability in harsh electromagnetic environments.
What is the thermal resistance from junction to case (RθJC) for CSD18532NQ5BT, and how is it measured?
The CSD18532NQ5BT has a maximum junction-to-case thermal resistance (RθJC) of 0.8°C/W, measured with the device mounted on a 1-in² (6.45-cm²), 2-oz (0.071-mm) thick copper pad on a 1.5-in × 1.5-in FR4 PCB. This value is design-specified-not user-dependent-and reflects the intrinsic thermal path through the copper clip and mold compound to the exposed drain pad, enabling accurate junction temperature estimation in thermally constrained layouts.
Can CSD18532NQ5BT be used in parallel configurations, and what layout considerations apply?
Yes, the CSD18532NQ5BT supports paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing across devices. For stable operation, ensure symmetrical gate drive paths (matched trace length and impedance), Kelvin-source routing to eliminate common-source inductance, and thermal coupling via shared copper area or heatsink. The CSD18532NQ5BT's low Qgd (7.9 nC) further reduces dynamic imbalance during switching transitions.
CSD18532NQ5BT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- NexFET™
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 64 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5340 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 156W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-VSON-CLIP (5x6)
CSD18532NQ5BT FAQ
1.How can I place an order for CSD18532NQ5BT through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD18532NQ5BT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD18532NQ5BT reliable?
The price and inventory of CSD18532NQ5BT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD18532NQ5BT is usually 5 days.
3.What payment methods are accepted for CSD18532NQ5BT?
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CSD18532NQ5BT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD18532NQ5BT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD18532NQ5BT?
For technical support, including CSD18532NQ5BT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD18532NQ5BT requirements.
6.How does Aetrix verify that CSD18532NQ5BT is sourced from the original manufacturer or authorized distributors?
All CSD18532NQ5BT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD18532NQ5BT meets industry standards.
7.What is the process for return or replacement of CSD18532NQ5BT?
All CSD18532NQ5BT units undergo pre-shipment inspection (PSI). If there is an issue with CSD18532NQ5BT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD18532NQ5BT part is unused and in its original packaging.
Return procedure for CSD18532NQ5BT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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