Texas Instruments CSD18533Q5AT

Overview

CSD18533Q5AT from Texas Instruments is a 60 V, 4.7 mΩ N-channel NexFET™ power MOSFET in a thermally enhanced 8-pin SON 5 mm × 6 mm package, optimized for high-efficiency DC-DC conversion and synchronous rectification with logic-level gate drive (V_GS(th) = 1.9 V) and ultra-low gate charge (Q_g = 29 nC at 10 V). It delivers 103 A continuous silicon-limited drain current at T_C = 25°C and supports avalanche energy of 140 mJ.

For engineers reviewing the CSD18533Q5AT datasheet, CSD18533Q5AT pinout, CSD18533Q5AT application, or CSD18533Q5AT equivalent, this device is selected for high-frequency switching topologies requiring low R_DS(on), fast turn-on/turn-off dynamics (t_d(on) = 5.2 ns, t_f = 2.0 ns), and robust thermal performance (R_θJC = 1.3°C/W).

Technical Context

This MOSFET employs a trench-gate silicon process to achieve ultra-low Q_g (29 nC) and Q_gd (5.4 nC), minimizing switching losses in hard-switched and resonant converters. Its low R_DS(on) of 4.7 mΩ at V_GS = 10 V and 6.5 mΩ at V_GS = 4.5 V enables efficient operation under logic-level drive conditions typical in modern controller ICs.

The device features an integrated body diode with V_SD = 0.8–1.0 V at I_SD = 18 A and reverse recovery charge Q_rr = 68 nC, supporting synchronous rectifier operation in secondary-side applications. Thermal design is enabled by its low junction-to-case resistance (1.3°C/W) and compatibility with standard FR4 PCB layouts using a 1-inch² 2-oz copper pad.

Key Specifications

Pinout & Package

Package: VSONP (DQJ), 8-pin, 5 mm × 6 mm plastic package with exposed thermal pad (top view); RoHS-compliant, halogen-free, Pb-free terminal plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP040N04L and SiR626DP, the CSD18533Q5AT offers superior voltage margin (60 V), lowest R_DS(on) in its class, and optimized SON thermal pad layout-making it the preferred choice for space-constrained, high-efficiency 48 V systems where thermal management and switching speed are critical.

Availability

CSD18533Q5AT is available at Aetrix Electronics and suitable for DC-DC conversion, synchronous rectification, and motor control applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and embedded OEM programs.

Supply support for CSD18533Q5AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, delivering analog and embedded processing solutions for industrial, automotive, and communications markets.

The CSD18533Q5AT belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-frequency, high-efficiency power conversion in compact form factors-emphasizing low gate charge, low R_DS(on), and robust thermal performance.

FAQ

What is the maximum continuous drain current for CSD18533Q5AT at 25°C case temperature?

The CSD18533Q5AT supports 103 A continuous drain current when the case temperature (T_C) is maintained at 25°C, limited by silicon capability-not package thermal constraints. This rating assumes adequate heatsinking to sustain junction temperature below 150°C and accounts for R_DS(on) drift with temperature. At higher case temperatures, derating applies per the datasheet's Figure 12.

Does CSD18533Q5AT require a gate driver IC when used with a 3.3 V microcontroller?

No, the CSD18533Q5AT does not require an external gate driver IC when driven by a 3.3 V microcontroller. Its logic-level threshold voltage (V_GS(th) = 1.5–2.3 V, typ 1.9 V) and low R_DS(on) of 6.5 mΩ at V_GS = 4.5 V ensure full enhancement. However, gate resistance must be selected to limit peak current and control switching speed-TI recommends R_G = 1–5 Ω for most 3.3 V GPIO-driven applications.

What is the thermal resistance from junction to case (R_θJC) for CSD18533Q5AT, and how is it measured?

The CSD18533Q5AT has a maximum R_θJC of 1.3°C/W, measured with the device mounted on a 1 inch² (6.45 cm²), 2 oz. copper pad on a 0.06 inch thick FR4 PCB. This value reflects the intrinsic thermal path from die junction to the exposed thermal pad on the bottom of the SON package and is independent of board layout-enabling accurate heatsink sizing when the pad is soldered to a thermal plane or external heatsink.

Can CSD18533Q5AT replace CSD18532Q5B in an existing design?

The CSD18533Q5AT is not a direct replacement for CSD18532Q5B. While both are 60 V SON MOSFETs, the CSD18532Q5B has higher R_DS(on) (5.3 mΩ vs. 4.7 mΩ) and higher Q_g (34 nC vs. 29 nC). Electrical compatibility exists, but layout reuse requires verification of thermal margin and gate drive strength-especially given differences in normalized R_DS(on) vs. temperature curves and avalanche energy (120 mJ vs. 140 mJ).

Is CSD18533Q5AT suitable for automotive applications per AEC-Q101?

The CSD18533Q5AT is not AEC-Q101 qualified. It is rated for operation from −55°C to +150°C and meets industrial reliability standards, but TI does not list it in their AEC-Q101 qualified portfolio. For automotive applications requiring qualification, engineers should select TI's AEC-Q101-certified NexFET™ devices such as CSD18540Q5B or consult TI's automotive-grade alternatives before finalizing design-in.