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Texas Instruments CSD18535KTTT
- Part No.:
- CSD18535KTTT
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
- Datasheet:
-
CSD18535KTTT.pdf
- Description:
- MOSFET N-CH 60V 200A/279A DDPAK
- Quantity:
- Payment:
- Shipping:
Inventory:710
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Product details
Overview
CSD18535KTTT from Texas Instruments is a 60V, 1.6mΩ N-channel NexFET™ power MOSFET in D2PAK (TO-263) package, designed for high-efficiency synchronous rectification and motor control. It delivers ultralow gate charge (Qg = 63 nC), avalanche-rated ruggedness, and low thermal resistance (RθJC = 0.5°C/W) to minimize conduction and switching losses in high-current DC/DC and motor drive stages.
For engineers reviewing the CSD18535KTTT datasheet, CSD18535KTTT pinout, CSD18535KTTT application, or CSD18535KTTT equivalent, key selection criteria include RDS(on) at 4.5V (2.3 mΩ), Qgd (10.4 nC), avalanche energy (616 mJ), and thermal performance in high-power density designs requiring robust SOA and reliable operation up to 175°C junction temperature.
Technical Context
This device uses a silicon-based trench-gate process optimized for low RDS(on) and fast switching. Its gate structure minimizes Miller capacitance (Crss = 24–31 pF) and enables precise control of turn-on/turn-off timing (td(on) = 9 ns, tf = 3 ns) under high di/dt conditions.
The integrated body diode supports unclamped inductive switching with trr = 63 ns and Qrr = 214 nC, while the exposed thermal pad and low RθJC enable direct heatsinking in compact power stages operating at continuous drain currents up to 200 A (package-limited) and pulsed currents up to 400 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 48V bus systems and industrial motor drives |
| RDS(on) | 1.6 mΩ @ VGS = 10V - Enables <1W conduction loss at 200A, critical for high-current synchronous rectifiers |
| Qg | 63 nC - Reduces gate driver power demand and improves efficiency in high-frequency (>100 kHz) converters |
| Qgd | 10.4 nC - Limits Miller-induced shoot-through risk during hard-switching transitions |
| EAS | 616 mJ - Sustains single-pulse inductive energy without failure in motor control fault conditions |
| RθJC | 0.5°C/W - Allows >300W power dissipation with modest heatsink interface, supporting compact thermal design |
| ID (cont) | 200 A - Package-limited continuous current rating suitable for high-power BLDC and LLC secondary-side designs |
Pinout & Package
D2PAK (TO-263) plastic package with exposed thermal pad; 3-pin configuration (Pin 1: Gate, Pin 2: Drain, Pin 3: Source); RoHS-exempt Sn lead finish; MSL Level-2-260°C-1 year.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control input | Low-threshold (VGS(th) = 1.9 V typ) terminal accepting standard 4.5–10V logic-level drive; requires <63 nC charge for full enhancement |
| Pin 2 (Drain) | High-side power node | Connected to main power rail; electrically tied to exposed thermal pad for low-inductance, high-current return path |
| Pin 3 (Source) | Power return / reference | Serves as local ground reference for gate drive; ties directly to PCB thermal plane via soldered exposed pad |
Key Features
| Feature | Design Value |
|---|---|
| Ultralow Qg and Qgd | 63 nC total gate charge and only 10.4 nC Miller charge reduce switching losses and gate driver stress in high-frequency topologies |
| Low thermal resistance | 0.5°C/W junction-to-case enables efficient heat transfer to external heatsink, supporting >300W continuous operation |
| Avalanche rated | 616 mJ single-pulse avalanche energy ensures robustness against inductive load transients in motor control and power supply applications |
| D2PAK plastic package | TO-263 outline with exposed thermal pad provides mechanical reliability and superior thermal performance vs. smaller SMD packages |
| Halogen-free & RoHS exempt | Complies with environmental standards while maintaining high-reliability plating integrity for industrial and automotive-qualified use |
Applications
| Secondary Side Synchronous Rectifier | Motor Control |
|---|---|
Use Scenario: High-efficiency DC/DC converter in server PSUs or telecom rectifiers operating at 100–500 kHz with 48V input and 12V/5V output. IC Role / Device Role / Timing Role: N-channel power switch replacing Schottky diode on secondary side; driven synchronously with primary-side controller timing. Use Value: Reduces conduction loss by >50% vs. 1.2V Schottky at 100A, enabling >96% system efficiency and lower thermal footprint. | Use Scenario: Three-phase inverter stage in industrial BLDC or PMSM motor drives with 24–48V DC bus and 10–20 kW output. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg; commutated at 8–20 kHz with precise dead-time control. Use Value: Enables 200A continuous phase current handling with <1.6 mΩ on-resistance, minimizing I²R heating and improving torque density. |
| Uninterruptible Power Supply (UPS) | Industrial DC Power Distribution |
Use Scenario: Bidirectional DC/AC inverter stage in online UPS systems with battery backup and 48V–54V nominal bus voltage. IC Role / Device Role / Timing Role: High-current switching device in H-bridge topology; subjected to reverse recovery and unclamped inductive switching during transfer events. Use Value: Avalanche rating (616 mJ) and fast diode recovery (trr = 63 ns) prevent failure during grid-fail transitions and load dumps. | Use Scenario: High-current distribution switch in programmable logic controller (PLC) backplanes or modular power supplies delivering up to 200A per rail. IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical contactors; controlled via isolated gate driver for soft-start and fault isolation. Use Value: Supports 200A continuous current with minimal voltage drop (<0.32V at 200A), eliminating contact wear and enabling predictive maintenance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1405PBF | RDS(on) = 5.3 mΩ @ 10V; Qg = 131 nC; TO-220 package; no avalanche rating | Larger footprint, higher conduction loss, unsuitable for high-frequency synchronous rectification | Use only where cost sensitivity outweighs efficiency and thermal constraints |
| STL220N6F7 | RDS(on) = 1.4 mΩ @ 10V; Qg = 110 nC; PowerFLAT 8x8 package; 60V rating; avalanche rated | Smaller thermal pad area, higher RθJA, limited to <120A continuous due to package limits | Select when board space is constrained but peak current remains below 120A |
Compared with IRF1405PBF and STL220N6F7, CSD18535KTTT offers the optimal balance of ultralow Qg (63 nC), industry-leading RDS(on) (1.6 mΩ), and proven avalanche ruggedness in a thermally robust D2PAK package-making it preferred for high-power, high-reliability synchronous rectification and motor control where thermal management and switching efficiency are critical.
Availability
CSD18535KTTT is available at Aetrix Electronics and suitable for high-current synchronous rectification, industrial motor control, and uninterruptible power supply applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for CSD18535KTTT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management technologies, with over 90 years of innovation in high-reliability components.
The NexFET™ power MOSFET product line is engineered for high-efficiency power conversion in industrial, computing, and automotive systems-emphasizing low RDS(on), fast switching, and rugged thermal performance in surface-mount packages.
FAQ
What is the maximum continuous drain current rating for CSD18535KTTT at 100°C case temperature?
The CSD18535KTTT supports 197 A continuous drain current at TC = 100°C, as specified in its Absolute Maximum Ratings table. This silicon-limited rating reflects derating from the 279 A value at 25°C and accounts for thermal resistance and safe operating area constraints. The package-limited rating remains 200 A regardless of temperature. Designers must ensure heatsinking maintains TC ≤ 100°C to sustain this current level reliably in CSD18535KTTT-based systems.
Does CSD18535KTTT have an integrated body diode, and what are its key recovery characteristics?
Yes, CSD18535KTTT includes a monolithic body diode with VSD = 0.9–1.0 V at ISD = 100 A and VGS = 0 V. Its reverse recovery time (trr) is 63 ns and reverse recovery charge (Qrr) is 214 nC under test conditions of VDS = 30 V, IF = 100 A, and di/dt = 300 A/μs. These values enable reliable operation in synchronous rectification and bidirectional switching where fast, low-loss diode behavior is essential-confirming CSD18535KTTT's suitability for high-frequency, high-current applications without external diode supplementation.
What is the gate threshold voltage range for CSD18535KTTT, and how does it vary with temperature?
The gate threshold voltage (VGS(th)) for CSD18535KTTT is specified as 1.4–2.4 V at TA = 25°C, with a typical value of 1.9 V. As shown in Figure 3-6 of the datasheet, VGS(th) decreases linearly with increasing junction temperature, measuring ~1.1 V at TJ = 175°C (ID = 250 µA). This negative temperature coefficient ensures inherent current sharing stability in parallel configurations and predictable turn-on behavior across the full –55°C to 175°C operating range of CSD18535KTTT.
Is CSD18535KTTT pin-compatible with other NexFET™ devices in the same D2PAK package?
CSD18535KTTT uses the standard 3-pin D2PAK (TO-263) outline with Gate (Pin 1), Drain (Pin 2), and Source (Pin 3) assignments consistent across TI's KTT-series NexFET™ MOSFETs-including CSD18534KTTT and CSD18536KTTT. While pinout is identical, electrical parameters differ significantly (e.g., RDS(on), Qg, voltage rating), so direct substitution requires validation of SOA, thermal design, and gate drive compatibility. CSD18535KTTT is not a drop-in replacement for higher-voltage or lower-RDS(on) variants without circuit review.
What reflow profile and moisture sensitivity level apply to CSD18535KTTT?
CSD18535KTTT has a Moisture Sensitivity Level (MSL) rating of Level-2-260°C-1 year, requiring baking only if exposed to ambient conditions beyond floor life. Its peak reflow temperature is 260°C, compatible with standard lead-free soldering processes. The device uses Sn (tin) lead finish and is supplied in small tape-and-reel format (50 pcs/reel), with reel dimensions matching JEDEC standard KTT carrier specifications. Proper storage and handling per J-STD-033 are required to prevent popcorning or delamination during CSD18535KTTT assembly.
CSD18535KTTT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- NexFET™
- Package/Case:
- TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 200A (Ta), 279A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 81 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6620 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (DDPAK-3)
CSD18535KTTT FAQ
1.How can I place an order for CSD18535KTTT through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD18535KTTT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD18535KTTT reliable?
The price and inventory of CSD18535KTTT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD18535KTTT is usually 5 days.
3.What payment methods are accepted for CSD18535KTTT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD18535KTTT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD18535KTTT?
CSD18535KTTT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD18535KTTT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD18535KTTT?
For technical support, including CSD18535KTTT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD18535KTTT requirements.
6.How does Aetrix verify that CSD18535KTTT is sourced from the original manufacturer or authorized distributors?
All CSD18535KTTT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD18535KTTT meets industry standards.
7.What is the process for return or replacement of CSD18535KTTT?
All CSD18535KTTT units undergo pre-shipment inspection (PSI). If there is an issue with CSD18535KTTT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD18535KTTT part is unused and in its original packaging.
Return procedure for CSD18535KTTT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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