Texas Instruments CSD18541F5T

Overview

CSD18541F5T from Texas Instruments is a 60-V, N-channel FemtoFET™ MOSFET in a 3-pin PICOSTAR (YJK) package, optimized for space-constrained industrial load switching with 54 mΩ R_DS(on) at V_GS = 10 V, 11 nC total gate charge, and ultra-low 0.36-mm profile. It serves as a high-density replacement for standard small-signal MOSFETs in compact DC-DC power path control.

For engineers reviewing the CSD18541F5T datasheet, CSD18541F5T pinout, CSD18541F5T application, or CSD18541F5T equivalent, key selection criteria include its 1.53 mm × 0.77 mm footprint, integrated ESD protection, 2.2-A continuous drain current, and compatibility with low-voltage gate drive (V_GS(th) = 1.75 V).

Technical Context

This device employs silicon-based N-channel enhancement-mode MOSFET architecture with planar gate structure, designed for fast switching in low-duty-cycle load switch applications. Its ultra-low Q_gd (1.6 nC) and Q_g (11 nC) minimize switching losses, while the integrated body diode supports bidirectional current handling in pulsed configurations.

The PICOSTAR package uses solderable copper terminals without leads, enabling direct surface-mount assembly on FR4 PCBs with minimal thermal resistance (R_θJA = 245°C/W on minimum copper). The device operates across –55°C to 150°C junction temperature and supports ±20-V gate drive with 60-V drain-source blocking capability.

Key Specifications

Pinout & Package

Packaged in a 3-terminal, leadless PICOSTAR (YJK) package measuring 1.53 mm × 0.77 mm × 0.36 mm max height, with exposed copper terminals for solder attachment and thermal conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Compared with DMN10H7TIS-13 and AO3414, the CSD18541F5T delivers superior power density (1.18 mm² vs ≥1.56 mm²), lower gate drive energy (11 nC vs ≥16 nC), and built-in ESD protection-critical for automated assembly and field reliability in compact industrial edge nodes.

Availability

CSD18541F5T is available at Aetrix Electronics and suitable for industrial load switching, USB-C power delivery, IoT sensor node power gating, and compact DC-DC converter sync FET applications requiring stable component supply and long-term manufacturability.

Supply support for CSD18541F5T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, delivering analog and embedded processing solutions for industrial, automotive, and personal electronics markets since 1930.

The CSD18541F5T belongs to TI's FemtoFET™ MOSFET product line, engineered specifically to replace legacy small-signal packages with ultra-miniaturized, high-performance alternatives for space- and efficiency-critical power management functions.

FAQ

What is the maximum continuous drain current rating for CSD18541F5T at 25°C ambient?

The CSD18541F5T has a maximum continuous drain current (I_D) of 2.2 A at T_A = 25°C, measured with the device mounted on FR4 PCB with minimum copper area. This rating assumes adequate thermal relief and derates linearly above 25°C ambient per the R_θJA = 245°C/W specification. At 70°C ambient, the practical I_D limit drops to approximately 1.5 A for reliable long-term operation.

Does CSD18541F5T require an external gate resistor for typical load switch applications?

No, the CSD18541F5T does not require an external gate resistor in most load switch applications due to its low Q_g (11 nC) and moderate C_iss (598 pF). When driven directly from a 3.3-V or 5-V GPIO with ≤10 mA sink/source capability, turn-on/turn-off transitions remain clean and within safe dv/dt limits. A 10–100 Ω resistor may be added only if EMI reduction or precise timing control is needed.

Is CSD18541F5T compatible with standard reflow soldering profiles?

Yes, CSD18541F5T is qualified for standard lead-free reflow per JEDEC J-STD-020, with MSL Level-1 rating and peak reflow temperature up to 260°C. Its NiAu lead finish and PICOSTAR package withstand typical 240–260°C profiles without delamination or solder wetting issues. No pre-baking is required for reels shipped in dry-packed moisture barrier bags.

How does the integrated ESD protection diode in CSD18541F5T affect circuit design?

The integrated ESD protection diode in CSD18541F5T connects gate to source and provides HBM Class 2 (≥2 kV) robustness, eliminating the need for external gate-protection components in low-energy applications. However, it does not replace system-level ESD protection on power or signal lines-designers must still implement TVS devices on input/output paths per IEC 61000-4-2 requirements.

Can CSD18541F5T be used as a high-side switch with 3.3-V logic-level control?

Yes, CSD18541F5T can operate as a high-side switch with 3.3-V logic-level control when used with appropriate level-shifting or charge-pump circuitry. Its V_GS(th) of 1.75 V ensures turn-on at 3.3 V, but full enhancement (low R_DS(on)) requires V_GS ≥ 4.5 V. For true high-side operation without external boost, a dedicated high-side driver IC is recommended to maintain V_GS > 4.5 V relative to the switched rail.