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Texas Instruments CSD18542KTTT
- Part No.:
- CSD18542KTTT
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
- Datasheet:
-
CSD18542KTTT.pdf
- Description:
- MOSFET N-CH 60V 200A/170A DDPAK
- Quantity:
- Payment:
- Shipping:
Inventory:288
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Product details
Overview
CSD18542KTTT from Texas Instruments is a 60V, 3.3 mΩ N-channel NexFET™ power MOSFET in D2PAK (TO-263) package, designed for high-efficiency DC-DC conversion and secondary-side synchronous rectification. It delivers ultra-low gate charge (Qg = 44 nC at 10 V), logic-level gate drive (VGS(th) = 1.8 V), and avalanche-rated ruggedness (EAS = 281 mJ), enabling high-frequency switching with minimal conduction and switching losses in compact power stages.
For engineers reviewing the CSD18542KTTT datasheet, CSD18542KTTT pinout, CSD18542KTTT application, or CSD18542KTTT equivalent, key selection criteria include RDS(on) at 4.5 V (4.0 mΩ), thermal resistance (RθJC = 0.6 °C/W), peak pulsed drain current (IDM = 400 A), and D2PAK tape-and-reel packaging (50-unit small reel) for automated assembly.
Technical Context
This MOSFET employs a silicon-based planar trench process optimized for low Qgd/Qg ratio (6.9/44 nC), reducing Miller-induced switching delays and improving hard-switching efficiency. Its D2PAK package integrates an exposed thermal pad directly bonded to the die backside, enabling efficient heat transfer to the PCB under high continuous drain current (ID = 200 A package-limited).
The device features a robust body diode with low forward voltage (VSD = 0.9 V at 100 A) and controlled reverse recovery (Qrr = 148 nC, trr = 53 ns), supporting synchronous rectifier operation without external Schottky replacement in mid-voltage DC-DC topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 48 V input bus systems and 12 V/24 V industrial rails. |
| RDS(on) @ 10 V | 3.3 mΩ - Enables <1.7 W conduction loss at 100 A, critical for high-current synchronous buck output stages. |
| RDS(on) @ 4.5 V | 4.0 mΩ - Supports direct logic-level drive from 3.3 V/5 V controllers without gate boosting. |
| Qg (10 V) | 44 nC - Low total gate charge reduces driver power demand and enables >1 MHz switching in LLC or phase-shifted full-bridge converters. |
| Qgd | 6.9 nC - Minimizes Miller plateau duration, improving dV/dt immunity and turn-off controllability. |
| EAS | 281 mJ - Avalanche energy rating allows safe operation under inductive load switching transients without snubbers. |
| RθJC | 0.6 °C/W - Enables >200 W power dissipation with modest heatsinking when mounted on 2 oz copper + thermal vias. |
Pinout & Package
D2PAK (TO-263) thermally enhanced plastic package with 2-pin configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source. Exposed drain tab provides primary thermal path to PCB; source and gate leads are gull-wing surface-mount terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control terminal | Accepts logic-level voltage (0–20 V); low input capacitance (Ciss = 3900 pF typ.) eases driver selection. |
| Pin 2 (Drain) | High-side power node | Exposed metal tab - must be soldered to large copper pour for thermal management; electrically connected to drain. |
| Pin 3 (Source) | Reference and return path | Low-inductance source connection essential for minimizing switching loop area and EMI in high-dI/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low Qg and Qgd | 44 nC total / 6.9 nC Miller charge - reduces gate driver losses and improves switching speed control in high-frequency SMPS. |
| Low thermal resistance | RθJC = 0.6 °C/W - supports >200 W continuous power dissipation with PCB-integrated heatsinking, eliminating discrete heatsinks in many 1U server PSUs. |
| Avalanche rated | EAS = 281 mJ (ID = 75 A, L = 0.1 mH) - ensures reliable operation during overcurrent events without derating or external protection. |
| Logic-level gate drive | VGS(th) = 1.5–2.2 V, fully enhanced at 4.5 V - enables direct interface with microcontrollers, PWM ICs, and digital power controllers without level-shifting. |
| D2PAK plastic package | TO-263 outline with exposed drain tab - provides mechanical robustness, high creepage/clearance, and proven manufacturability in high-volume SMT lines. |
Applications
| Server VRM Output Stage | Industrial 48 V DC-DC Converter |
|---|---|
|
Use Scenario: High-current, high-efficiency point-of-load regulation in 1U server motherboards delivering up to 200 A to CPU/GPU cores. IC Role / Device Role / Timing Role: Synchronous rectifier switch in multiphase buck converter, operating at 500 kHz–1 MHz with precise dead-time control. Use Value: 3.3 mΩ RDS(on) at 10 V and 44 nC Qg minimize both conduction loss (<1.7 W) and switching loss, enabling >95% efficiency at full load. |
Use Scenario: Secondary-side synchronous rectification in isolated 48 V-to-12 V telecom or industrial DC-DC modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in active-clamp forward or LLC resonant converter, driven by transformer-coupled gate signals. Use Value: Avalanche rating (281 mJ) tolerates leakage inductance spikes during ZVS transitions; 4.0 mΩ RDS(on) at 4.5 V supports direct drive from gate transformer secondaries. |
| Motor Drive Half-Bridge | Battery-Powered Power Tool Inverter |
|
Use Scenario: 24–48 V BLDC motor inverter stage for HVAC blowers or industrial pumps requiring high peak current capability. IC Role / Device Role / Timing Role: High-side or low-side switch in three-phase half-bridge, commutated at ≤20 kHz with 400 A pulsed current capability. Use Value: 400 A IDM and 0.6 °C/W RθJC sustain short-duration torque bursts without thermal shutdown; low Qgd prevents shoot-through during fast PWM edges. |
Use Scenario: Compact, high-power inverter in cordless power tools using 18–24 V Li-ion battery packs. IC Role / Device Role / Timing Role: Low-side switch in H-bridge motor driver, operated with PWM frequencies up to 20 kHz and logic-level MCU control. Use Value: Logic-level threshold (1.8 V typ.) eliminates need for gate drivers; RoHS-compliant lead-free plating ensures reliability in handheld thermal cycling environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1407PBF | RDS(on) = 8.1 mΩ @ 10 V; Qg = 110 nC; TO-220 package; no avalanche rating. | Higher conduction loss and slower switching limit use to lower-frequency (<100 kHz), lower-current (<60 A) applications. | Select only if cost sensitivity outweighs efficiency and thermal performance; requires heatsink due to higher RθJA. |
| STL220N6F7 | RDS(on) = 2.2 mΩ @ 10 V; Qg = 62 nC; PowerFLAT 8x8 package; 60 V rating; avalanche rated. | Lower RDS(on) improves conduction loss but higher Qg increases switching loss above 300 kHz; smaller footprint limits thermal mass. | Prefer for space-constrained designs where board area is critical and peak current ≤150 A; verify PCB thermal design for 0.9 °C/W RθJC. |
Compared with IRF1407PBF and STL220N6F7, the CSD18542KTTT offers the optimal balance of ultra-low Qg/Qgd, robust avalanche capability, and D2PAK thermal performance-making it uniquely suited for high-frequency, high-current synchronous rectification where both efficiency and reliability are non-negotiable.
Availability
CSD18542KTTT is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V DC-DC converters, and BLDC motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.
Supply support for CSD18542KTTT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-reliability power devices.
The CSD18542KTTT belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in datacenter, industrial, and automotive applications where low Qg, low RDS(on), and thermal robustness are critical.
FAQ
What is the maximum continuous drain current for CSD18542KTTT at 100°C case temperature?
The CSD18542KTTT supports 120 A continuous drain current at TC = 100°C, as specified in its Absolute Maximum Ratings table. This value reflects silicon-limited current under thermal equilibrium conditions and assumes proper PCB thermal design with the exposed drain tab soldered to ≥4 thermal vias and ≥2 oz copper pour.
Does CSD18542KTTT require a gate driver IC, or can it be driven directly by a microcontroller?
The CSD18542KTTT can be driven directly by a 3.3 V or 5 V microcontroller GPIO due to its logic-level threshold (VGS(th) = 1.5–2.2 V) and full enhancement at VGS = 4.5 V. However, for high-frequency (>500 kHz) or high-current (>50 A) applications, a dedicated gate driver is recommended to ensure fast, low-impedance turn-on/turn-off and minimize switching losses.
What is the thermal resistance from junction to case (RθJC) for CSD18542KTTT, and how does it impact heatsink selection?
The CSD18542KTTT has a typical RθJC of 0.6 °C/W, measured from junction to the exposed drain tab. This low value means most heat flows directly into the PCB via the tab, making external heatsinks unnecessary in many applications-provided the PCB includes adequate copper area, thermal vias, and optional internal ground plane layers. Heatsink use is only required when ambient temperature exceeds 70°C or power dissipation exceeds 150 W.
Is CSD18542KTTT suitable for avalanche operation, and what is its single-pulse avalanche energy rating?
Yes, the CSD18542KTTT is explicitly avalanche rated with a single-pulse avalanche energy (EAS) of 281 mJ under test conditions of ID = 75 A, L = 0.1 mH, and RG = 25 Ω. This rating confirms its ability to safely absorb inductive switching energy without failure, making it appropriate for hard-switched topologies and fault-tolerant designs where snubber circuits are omitted.
What is the gate-to-source leakage current (IGSS) specification for CSD18542KTTT, and why does it matter in low-power standby modes?
The CSD18542KTTT specifies IGSS ≤ 100 nA at VGS = 20 V and TA = 25°C. This ultra-low leakage ensures minimal gate bias current draw during system standby or sleep states, preserving battery life in portable equipment and preventing unintended turn-on due to accumulated gate charge in high-impedance drive circuits.
CSD18542KTTT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- NexFET™
- Package/Case:
- TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 57 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5070 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (DDPAK-3)
CSD18542KTTT FAQ
1.How can I place an order for CSD18542KTTT through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD18542KTTT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD18542KTTT reliable?
The price and inventory of CSD18542KTTT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD18542KTTT is usually 5 days.
3.What payment methods are accepted for CSD18542KTTT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD18542KTTT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD18542KTTT?
CSD18542KTTT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD18542KTTT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD18542KTTT?
For technical support, including CSD18542KTTT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD18542KTTT requirements.
6.How does Aetrix verify that CSD18542KTTT is sourced from the original manufacturer or authorized distributors?
All CSD18542KTTT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD18542KTTT meets industry standards.
7.What is the process for return or replacement of CSD18542KTTT?
All CSD18542KTTT units undergo pre-shipment inspection (PSI). If there is an issue with CSD18542KTTT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD18542KTTT part is unused and in its original packaging.
Return procedure for CSD18542KTTT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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