Texas Instruments CSD19506KCS

Overview

CSD19506KCS from Texas Instruments is an 80V, 2.0 mΩ (at V_GS = 10 V), TO-220 packaged N-channel NexFET™ power MOSFET optimized for high-efficiency power conversion in secondary-side synchronous rectification and motor control circuits. It delivers ultra-low gate charge (Q_g = 120 nC), avalanche-rated ruggedness (E_AS = 832 mJ), and low thermal resistance (R_θJC = 0.4 °C/W).

For engineers reviewing the CSD19506KCS datasheet, CSD19506KCS pinout, CSD19506KCS application, or CSD19506KCS equivalent, key selection criteria include its 150 A continuous drain rating (package-limited), 2.0 mΩ on-resistance at 10 V gate drive, TO-220 mechanical compatibility, and verified unclamped inductive switching performance under industrial temperature range (–55 °C to 175 °C).

Technical Context

The CSD19506KCS employs a silicon-based planar trench-gated structure enabling ultra-low Q_g and Q_gd, critical for minimizing switching losses in high-frequency DC/DC converters and motor drives. Its R_DS(on) remains stable across –55 °C to 125 °C case temperatures, with normalized on-resistance variation ≤1.2× over that range at V_GS = 10 V.

Thermally, it features a low R_θJC of 0.4 °C/W and supports pulsed drain currents up to 400 A (100 μs, 1% duty cycle). The integrated body diode exhibits V_SD = 0.9–1.1 V at 100 A and Q_rr = 525 nC, making it suitable for synchronous rectifier operation with controlled reverse recovery.

Key Specifications

Pinout & Package

Package: TO-220 plastic package (KCS variant), 3-terminal through-hole, 19.65 mm max height, metal tab (Drain) electrically connected to Pin 2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL220N6F7 and IRF1404ZPBF, the CSD19506KCS uniquely combines 80 V rating, sub-2.1 mΩ on-resistance, and certified avalanche ruggedness in a standard TO-220 package-making it the preferred choice for next-generation 48 V industrial and computing power systems where reliability and efficiency are co-prioritized.

Availability

CSD19506KCS is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, brushless DC motor control, and industrial DC power distribution requiring stable component supply across multi-year production cycles.

Supply support for CSD19506KCS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, specializing in analog, embedded processing, and power management technologies with over 90 years of innovation history.

The CSD19506KCS belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-efficiency, high-current switching in server, telecom, and industrial power supplies where low Q_g, low R_DS(on), and thermal robustness are critical.

FAQ

What is the maximum continuous drain current rating for the CSD19506KCS?

The CSD19506KCS has a package-limited continuous drain current (I_D) of 150 A at T_A = 25 °C. This rating assumes proper heatsinking and is constrained by the TO-220 package's thermal and bond-wire limits-not silicon capability, which supports up to 273 A at T_C = 25 °C. Derating is required above 25 °C ambient per the R_θJA = 62 °C/W curve.

Does the CSD19506KCS have avalanche capability, and how is it specified?

Yes, the CSD19506KCS is fully avalanche rated with E_AS = 832 mJ (single-pulse, I_D = 129 A, L = 0.1 mH, R_G = 25 Ω). This specification is measured and guaranteed per JEDEC standards, enabling reliable operation during inductive turn-off events without external protection-critical for motor drive and power supply flyback phases.

What is the gate threshold voltage range for the CSD19506KCS, and how does it affect drive compatibility?

The CSD19506KCS has a gate threshold voltage (V_GS(th)) range of 2.1 V to 3.2 V (min/typ/max at I_D = 250 μA). With a typical value of 2.5 V, it is fully compatible with 3.3 V and 5 V logic-level gate drivers. However, full enhancement (to achieve 2.0 mΩ R_DS(on)) requires ≥10 V V_GS, so gate drivers must supply sufficient voltage and current to deliver 120 nC within required switching times.

How does the thermal performance of the CSD19506KCS compare between junction-to-case and junction-to-ambient metrics?

The CSD19506KCS has R_θJC = 0.4 °C/W (junction-to-case), reflecting excellent internal thermal conduction to the metal tab. In contrast, R_θJA = 62 °C/W (junction-to-ambient) applies only to the bare device on a standard test board-making it irrelevant for real designs. Actual system thermal performance depends entirely on heatsink interface quality and mounting pressure, as >95% of heat flows through the tab (Pin 2/Drain).

Is the CSD19506KCS suitable for use as a synchronous rectifier in a 48 V to 12 V LLC converter?

Yes, the CSD19506KCS is explicitly recommended for secondary-side synchronous rectification, including 48 V input LLC converters. Its 80 V V_DS rating safely handles reflected transients and ringing; low Q_gd prevents false turn-on during high dv/dt; and 2.0 mΩ R_DS(on) at 10 V gate drive significantly reduces conduction loss versus Schottky alternatives-validated in TI reference designs like PMP11299.