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Texas Instruments CSD19506KTT
- Part No.:
- CSD19506KTT
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
- Datasheet:
-
CSD19506KTT.pdf
- Description:
- MOSFET N-CH 80V 200A DDPAK
- Quantity:
- Payment:
- Shipping:
Inventory:975
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Product details
Overview
CSD19506KTT from Texas Instruments is an 80V N-Channel NexFET™ Power MOSFET in D2PAK (TO-263) package, designed for high-efficiency power conversion with RDS(on) = 2.0 mΩ at VGS = 10 V, Qg = 120 nC, and avalanche-rated operation. It serves as a primary switching element in secondary-side synchronous rectifiers and motor control stages where low conduction and switching losses are critical.
For engineers reviewing the CSD19506KTT datasheet, CSD19506KTT pinout, CSD19506KTT application, or CSD19506KTT equivalent, key selection criteria include its ultra-low gate charge, 200 A continuous drain current (package-limited), 0.4°C/W junction-to-case thermal resistance, D2PAK thermal pad layout compatibility, and verified unclamped inductive switching performance up to 832 mJ.
Technical Context
This MOSFET employs a silicon-based planar trench-gate structure optimized for fast switching and minimal Miller capacitance (Crss = 42–55 pF). Its low RDS(on) and Qgd/Qg ratio (20/120 nC) reduce switching losses and improve hard-switching efficiency in DC-DC converters and H-bridge motor drivers.
The device features a thermally enhanced D2PAK package with exposed drain pad, enabling direct PCB copper thermal coupling. Its gate threshold voltage (VGS(th) = 2.1–3.2 V) supports robust 5-V and 10-V gate drive compatibility, while its diode forward voltage (VSD = 0.9–1.1 V at 100 A) ensures low-loss freewheeling in synchronous rectification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Maximum blocking voltage for use in 48-V input systems and 60-V bus applications without derating. |
| RDS(on) | 2.0 mΩ @ VGS = 10 V - Enables <1.0 W conduction loss at 70 A, critical for high-current synchronous rectifiers. |
| Qg | 120 nC - Low total gate charge reduces driver power demand and enables >500 kHz switching in LLC resonant converters. |
| ID (cont) | 200 A - Package-limited continuous current rating, supported by 0.4°C/W RθJC for high-power thermal management. |
| EAS | 832 mJ - Single-pulse avalanche energy at ID = 129 A confirms ruggedness under transient overvoltage conditions. |
| VGS(th) | 2.5 V (typ) - Ensures reliable turn-on with standard logic-level gate drivers while maintaining noise immunity. |
| Ciss | 9380–12200 pF - Input capacitance impacts gate drive loop stability and EMI filter design in high-frequency topologies. |
Pinout & Package
D2PAK (TO-263) plastic package with thermally enhanced exposed drain pad; 3-terminal configuration (Drain, Gate, Source); RoHS-compliant Sn lead finish; MSL Level-2-260°C-1 year.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control terminal | Accepts 0–20 V gate drive; low input capacitance (Ciss) minimizes driver stress and propagation delay. |
| Pin 2 (Drain) | High-side power node | Internally connected to exposed metal pad; must be soldered to large PCB copper area for thermal dissipation. |
| Pin 3 (Source) | Reference and return path | Serves as local ground reference for gate drive; low-inductance layout required to suppress ringing during fast switching. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low Qg and Qgd | 120 nC total / 20 nC Miller charge - Reduces switching transition time and overlap loss in hard-switched topologies. |
| Low thermal resistance | RθJC = 0.4°C/W - Enables >300 W power dissipation with modest heatsinking, supporting compact industrial motor drives. |
| Avalanche rated | EAS = 832 mJ - Eliminates need for external clamping in inductive load switching, improving system reliability. |
| D2PAK plastic package | TO-263 outline with exposed drain pad - Supports >200 A current handling and simplifies thermal interface vs. TO-220. |
| Halogen-free & RoHS | Compliant with IPC-1752A material declaration - Meets EU environmental requirements for industrial and automotive end equipment. |
Applications
| Secondary-Side Synchronous Rectifier | Brushless DC Motor Control |
|---|---|
|
Use Scenario: Used in the secondary side of isolated DC-DC converters (e.g., 48 V → 12 V) to replace Schottky diodes and reduce conduction losses. IC Role / Device Role / Timing Role: Power MOSFET acting as actively controlled rectifier synchronized to primary-side switching timing. Use Value: Achieves >96% efficiency at full load due to 2.0 mΩ RDS(on), reducing heat sink size and enabling higher power density. |
Use Scenario: Integrated into three-phase inverter legs driving BLDC motors in HVAC blowers, power tools, and industrial actuators. IC Role / Device Role / Timing Role: High-current half-bridge switch operating at 20–40 kHz PWM frequency with precise dead-time control. Use Value: Delivers 200 A continuous current per phase with low switching loss (Qg = 120 nC), minimizing thermal stress and enabling fanless operation. |
| Server VRM Output Stage | Industrial UPS Inverter |
|
Use Scenario: Deployed in multiphase buck converter output stages supplying CPU/GPU core voltage (e.g., 0.8–1.2 V @ 200+ A). IC Role / Device Role / Timing Role: Low-side switch in interleaved synchronous buck topology, driven by dedicated gate controller ICs. Use Value: Ultra-low RDS(on) and Qgd minimize both conduction and switching losses, improving transient response and reducing output ripple. |
Use Scenario: Used in bi-directional inverter stage of online UPS systems converting DC battery bank to 230 V AC output. IC Role / Device Role / Timing Role: High-reliability switching device in IGBT-like half-bridge configuration with active short-circuit protection. Use Value: Avalanche rating (832 mJ) and 175°C max junction temperature support fault-tolerant operation during grid faults or overload events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | RDS(on) = 1.8 mΩ @ 10 V, Qg = 135 nC, D2PAK package, 60 V rating | Limited to ≤60 V systems; higher gate charge increases driver loss at >300 kHz | Select when lower RDS(on) is prioritized over voltage headroom and switching speed. |
| IXTP120N10T | RDS(on) = 5.2 mΩ @ 10 V, Qg = 85 nC, TO-220 package, 100 V rating | Higher on-resistance doubles conduction loss; TO-220 limits thermal performance vs. D2PAK | Choose for legacy board compatibility or where 100 V blocking is mandatory despite efficiency trade-off. |
Compared with STL220N6F7 and IXTP120N10T, the CSD19506KTT delivers optimal balance of 80 V rating, 2.0 mΩ conduction loss, and 120 nC gate charge in a thermally superior D2PAK package-making it preferred for high-current, high-efficiency 48–60 V power stages where thermal management and switching speed are co-critical.
Availability
CSD19506KTT is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and telecom DC-DC converters requiring stable component supply, long-term manufacturability, and consistent parametric performance across production lots.
Supply support for CSD19506KTT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, delivering analog and embedded processing solutions for industrial, automotive, and communications markets since 1930.
The CSD19506KTT belongs to TI's NexFET™ Power MOSFET product line, engineered specifically for high-frequency, high-current power conversion applications where low Qg, low RDS(on), and robust thermal performance are essential.
FAQ
What is the maximum continuous drain current rating for the CSD19506KTT?
The CSD19506KTT has a package-limited continuous drain current (ID) of 200 A at TA = 25°C. This rating assumes proper PCB thermal management using the exposed drain pad. At case temperature TC = 100°C, the silicon-limited current drops to 206 A, confirming thermal design margin for sustained high-load operation.
Does the CSD19506KTT support 5-V gate drive?
Yes, the CSD19506KTT supports 5-V gate drive. Its typical gate threshold voltage (VGS(th)) is 2.5 V, and RDS(on) is specified at 2.2 mΩ with VGS = 6 V. While full enhancement occurs at 10 V, the device delivers usable conduction performance down to 5 V, making it compatible with standard microcontroller GPIO outputs and logic-level drivers.
What is the significance of the CSD19506KTT being avalanche rated?
The CSD19506KTT is fully avalanche rated with EAS = 832 mJ (ID = 129 A, L = 0.1 mH, RG = 25 Ω). This means it can safely absorb inductive energy during unclamped inductive switching events-such as MOSFET turn-off with freewheeling current-without failure, eliminating the need for external snubbers in many motor and converter designs.
How does the D2PAK package of the CSD19506KTT improve thermal performance?
The D2PAK (TO-263) package of the CSD19506KTT features an exposed drain pad that serves as the primary thermal path. With a junction-to-case thermal resistance (RθJC) of just 0.4°C/W, it enables efficient heat transfer to the PCB copper plane. This allows the CSD19506KTT to dissipate up to 375 W under ideal mounting conditions-far exceeding TO-220 alternatives.
Can the CSD19506KTT be used in parallel configurations?
Yes, the CSD19506KTT is suitable for paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing across multiple devices. Its low gate charge (120 nC) and matched dynamic parameters (Qgd, Ciss) simplify gate drive synchronization. Layout symmetry and individual gate resistors are recommended to ensure balanced switching behavior.
CSD19506KTT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- NexFET™
- Package/Case:
- TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.3mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:
- 3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 156 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 12200 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (DDPAK-3)
CSD19506KTT FAQ
1.How can I place an order for CSD19506KTT through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD19506KTT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD19506KTT reliable?
The price and inventory of CSD19506KTT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD19506KTT is usually 5 days.
3.What payment methods are accepted for CSD19506KTT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD19506KTT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD19506KTT?
CSD19506KTT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD19506KTT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD19506KTT?
For technical support, including CSD19506KTT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD19506KTT requirements.
6.How does Aetrix verify that CSD19506KTT is sourced from the original manufacturer or authorized distributors?
All CSD19506KTT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD19506KTT meets industry standards.
7.What is the process for return or replacement of CSD19506KTT?
All CSD19506KTT units undergo pre-shipment inspection (PSI). If there is an issue with CSD19506KTT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD19506KTT part is unused and in its original packaging.
Return procedure for CSD19506KTT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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