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Texas Instruments CSD19506KTTT
- Part No.:
- CSD19506KTTT
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
- Datasheet:
-
CSD19506KTTT.pdf
- Description:
- MOSFET N-CH 80V 200A DDPAK
- Quantity:
- Payment:
- Shipping:
Inventory:700
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Product details
Overview
CSD19506KTTT from Texas Instruments is an 80V N-channel NexFET™ power MOSFET in D2PAK (TO-263) package, designed for high-efficiency power conversion with RDS(on) = 2.0 mΩ at VGS = 10 V, Qg = 120 nC, and avalanche-rated operation. It serves as a low-loss switching element in secondary-side synchronous rectification and motor control circuits.
For engineers reviewing the CSD19506KTTT datasheet, CSD19506KTTT pinout, CSD19506KTTT application, or CSD19506KTTT equivalent, key selection criteria include ultra-low gate charge, thermal resistance of 0.4°C/W (junction-to-case), 200 A continuous drain current (package-limited), and D2PAK thermal pad layout compatibility.
Technical Context
This MOSFET employs a silicon-based planar trench process optimized for fast switching and minimal conduction loss. Its gate structure delivers low Qgd/Qg ratio (20/120 nC), enabling reduced Miller-induced turn-off delay and improved hard-switching robustness.
The device features an integrated body diode with VSD = 0.9–1.1 V at ISD = 100 A and Qrr = 525 nC, supporting synchronous rectifier operation with controlled reverse recovery. Thermal design leverages the exposed thermal pad and low RθJC to sustain 375 W power dissipation at TC = 25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Maximum blocking voltage for DC/AC line-side or bus-level switching applications |
| RDS(on) | 2.0 mΩ @ VGS = 10 V - Enables <1.0 W conduction loss at 100 A, critical for high-current synchronous rectifiers |
| Qg | 120 nC - Low total gate charge reduces driver power requirement and switching energy loss |
| Qgd | 20 nC - Minimizes Miller plateau duration, improving dV/dt immunity and turn-off speed |
| ID (cont) | 200 A - Package-limited continuous current rating, defined by D2PAK thermal pad soldering and PCB copper area |
| EAS | 832 mJ - Single-pulse avalanche energy supports unclamped inductive switching in motor drives without external snubbers |
| RθJC | 0.4°C/W - Enables direct thermal coupling to heatsink via exposed drain pad, essential for >100 W power stages |
Pinout & Package
D2PAK (TO-263) plastic package with exposed thermal pad on underside; 3-terminal configuration (Drain, Gate, Source); RoHS-exempt tin-lead (SN) plating; MSL Level-2-260°C-1 year.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control input | Receives PWM signal; requires low-impedance driver due to 120 nC total charge; gate protection against ±20 V transients required |
| Pin 2 (Drain) | High-side switch node | Connected to power rail or inductive load; electrically tied to exposed thermal pad - must be routed to system ground plane or heatsink |
| Pin 3 (Source) | Power return / reference node | Serves as local ground reference for gate drive; source inductance must be minimized to avoid shoot-through in half-bridge configurations |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low Qg and Qgd | Reduces gate driver losses and improves efficiency in high-frequency (>100 kHz) SMPS designs |
| Low thermal resistance (RθJC = 0.4°C/W) | Allows direct mounting to heatsink without thermal interface material, simplifying thermal management in compact converters |
| Avalanche rated (EAS = 832 mJ) | Eliminates need for external clamping circuits in motor phase-leg or flyback transformer primary switching |
| D2PAK plastic package with exposed drain pad | Provides mechanical robustness and 3× higher thermal conductivity than SO-8, supporting >200 A peak currents |
| Pb-free terminal plating (RoHS exempt SN) | Ensures solderability and long-term reliability under industrial reflow profiles while meeting legacy compliance requirements |
Applications
| Secondary-Side Synchronous Rectifier | Brushless DC Motor Control |
|---|---|
|
Use Scenario: Used in LLC resonant converter secondary side to replace Schottky diodes, operating at 100–300 kHz with 12–48 V output. IC Role / Device Role / Timing Role: Power switch synchronized to primary-side controller timing; driven by dedicated gate driver referenced to output common. Use Value: Reduces conduction loss by >40% vs. 40 V Schottky, enabling >96% full-load efficiency in 500 W server PSUs. |
Use Scenario: High-side switch in 3-phase inverter driving 2–5 kW BLDC motors in industrial pumps and HVAC compressors. IC Role / Device Role / Timing Role: Fast-turning power stage element; switched at 8–20 kHz with dead-time control to prevent shoot-through. Use Value: Enables 200 A peak phase current handling with <0.5°C/W effective thermal resistance when mounted on aluminum baseplate. |
| DC-DC Buck Converter (High Current) | Uninterruptible Power Supply (UPS) Inverter Stage |
|
Use Scenario: Input-stage switch in 48 V–12 V buck converter delivering up to 150 A to AI accelerator cards. IC Role / Device Role / Timing Role: Main power FET in synchronous buck topology; gate driven by integrated controller with adaptive dead time. Use Value: Achieves <0.8 mΩ effective RDS(on) in parallel configuration, limiting junction temperature rise to <45°C at full load. |
Use Scenario: Output H-bridge switch in online double-conversion UPS delivering clean 230 V AC during grid failure. IC Role / Device Role / Timing Role: Hard-switched inverter leg component; subjected to repetitive unclamped inductive switching during battery discharge. Use Value: Withstands 832 mJ single-pulse avalanche energy, eliminating need for external TVS clamps and reducing BOM count by 2–3 components per leg. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTH30N80L2 | 800 V rating, 30 mΩ RDS(on), TO-247 package, higher Qg (165 nC) | Targeted at high-voltage PFC and offline SMPS, not optimized for low-VDS synchronous rectification | Select only if system requires >400 V blocking; unsuitable for 48 V bus applications due to excessive conduction loss |
| IRFP4868PBF | 80 V rating, 2.2 mΩ RDS(on) @ 10 V, TO-247 package, Qg = 145 nC, no avalanche rating | General-purpose power switching; lacks specified EAS and optimized Qgd/Qg ratio | Acceptable for non-avalanche-critical buck converters; avoid in motor control where inductive spikes exceed 80 V |
Compared with CSD19506KTTT, IXTH30N80L2 trades lower RDS(on) for much higher voltage capability and larger footprint, while IRFP4868PBF offers similar voltage rating but inferior switching efficiency and no avalanche assurance-making CSD19506KTTT the optimal choice for thermally constrained, high-current 80 V synchronous rectification.
Availability
CSD19506KTTT is available at Aetrix Electronics and suitable for high-current DC-DC conversion, motor drive inverters, and UPS output stages requiring stable component supply across multi-year production cycles.
Supply support for CSD19506KTTT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, specializing in analog, embedded processing, and power management technologies since 1930.
CSD19506KTTT belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in data center, industrial, and automotive systems where low Qg, low RDS(on), and robust thermal performance are critical.
FAQ
What is the maximum continuous drain current rating for CSD19506KTTT?
The CSD19506KTTT has a package-limited continuous drain current (ID) of 200 A at TC = 25°C. This rating assumes proper thermal management via the exposed drain pad soldered to a minimum 10 cm² copper area on a 2-layer PCB. At TC = 100°C, the silicon-limited current drops to 206 A, confirming thermal design governs practical operation.
Does CSD19506KTTT support avalanche operation, and what is its rated energy?
Yes, CSD19506KTTT is fully avalanche-rated with a single-pulse unclamped inductive switching (UIS) energy rating of 832 mJ under test conditions of ID = 129 A, L = 0.1 mH, and RG = 25 Ω. This specification is verified per JEDEC standards and enables reliable operation in motor control and flyback topologies without external clamping components.
What is the gate threshold voltage range for CSD19506KTTT, and how does it vary with temperature?
The CSD19506KTTT has a gate threshold voltage (VGS(th)) range of 2.1 V to 3.2 V at TA = 25°C, with a typical value of 2.5 V. As temperature increases, VGS(th) decreases linearly - dropping to ~1.9 V at TC = 125°C - which must be accounted for in gate drive design to ensure full enhancement across the operating temperature range.
How does the D2PAK package of CSD19506KTTT improve thermal performance compared to smaller packages?
The D2PAK (TO-263) package of CSD19506KTTT features an exposed drain pad that provides a direct thermal path from junction to PCB, achieving RθJC = 0.4°C/W - over 3× better than SO-8 or PowerPAK packages. This allows sustained 375 W power dissipation at TC = 25°C and supports high-current applications where thermal density exceeds 10 W/cm².
Is CSD19506KTTT compatible with standard lead-free reflow profiles?
Yes, CSD19506KTTT is qualified for lead-free reflow with a moisture sensitivity level (MSL) rating of Level-2-260°C-1 year. Its tin-lead (SN) terminal plating is RoHS-exempt and compatible with standard SAC305 paste and peak reflow temperatures up to 260°C, provided the 1-year floor life and bake requirements per J-STD-020 are observed.
CSD19506KTTT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- NexFET™
- Package/Case:
- TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.3mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:
- 3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 156 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 12200 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (DDPAK-3)
CSD19506KTTT FAQ
1.How can I place an order for CSD19506KTTT through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD19506KTTT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD19506KTTT reliable?
The price and inventory of CSD19506KTTT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD19506KTTT is usually 5 days.
3.What payment methods are accepted for CSD19506KTTT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD19506KTTT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD19506KTTT?
CSD19506KTTT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD19506KTTT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD19506KTTT?
For technical support, including CSD19506KTTT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD19506KTTT requirements.
6.How does Aetrix verify that CSD19506KTTT is sourced from the original manufacturer or authorized distributors?
All CSD19506KTTT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD19506KTTT meets industry standards.
7.What is the process for return or replacement of CSD19506KTTT?
All CSD19506KTTT units undergo pre-shipment inspection (PSI). If there is an issue with CSD19506KTTT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD19506KTTT part is unused and in its original packaging.
Return procedure for CSD19506KTTT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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