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Texas Instruments CSD19533Q5AT
- Part No.:
- CSD19533Q5AT
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
CSD19533Q5AT.pdf
- Description:
- MOSFET N-CH 100V 100A 8VSON
- Quantity:
- Payment:
- Shipping:
Inventory:613
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Product details
Overview
CSD19533Q5AT from Texas Instruments is a 100 V, 7.8 mΩ N-channel NexFET™ power MOSFET in a SON 5 mm × 6 mm package, optimized for high-efficiency power conversion with ultra-low gate charge (27 nC), avalanche rating, and low thermal resistance (RθJC = 1.3 °C/W). It delivers 13 A continuous drain current at TA = 25 °C and supports telecom primary-side switching and synchronous rectification.
For engineers reviewing the CSD19533Q5AT datasheet, CSD19533Q5AT pinout, CSD19533Q5AT application, or CSD19533Q5AT equivalent, this page provides verified electrical parameters, thermal performance data, validated pin configuration, and real-world use cases in telecom and motor control systems - all confirmed against TI's SLPS486A production datasheet.
Technical Context
This MOSFET employs a silicon-limited design with a 100 V breakdown voltage and threshold voltage of 2.8 V (typical), enabling robust gate drive compatibility with standard 5–10 V controllers. Its low RDS(on) of 7.8 mΩ at VGS = 10 V and ultra-low Qgd (4.9 nC) minimize switching losses in hard-switched topologies.
The device features integrated body diode with 0.8–1.0 V forward voltage at 13 A and reverse recovery charge of 163 nC, supporting efficient synchronous rectification. Thermal design is enabled by a 1.3 °C/W junction-to-case resistance and SON package optimized for high-current PCB copper pads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Withstands up to 100 V drain-source voltage, suitable for telecom 48 V input stages and industrial 24–48 V bus designs. |
| RDS(on) @ VGS = 10 V | 7.8 mΩ - Enables <1 W conduction loss at 13 A, critical for high-current DC-DC converters and motor drivers. |
| Qg | 27 nC - Reduces gate drive power and enables high-frequency operation (>500 kHz) without excessive driver sizing. |
| ID (continuous, TA = 25 °C) | 13 A - Specifies safe ambient-operated current on standard FR4 with 1-in² 2-oz Cu pad (RθJA = 50 °C/W). |
| EAS | 106 mJ - Avalanche-rated for unclamped inductive switching, supporting reliable operation in flyback and LLC resonant converters. |
| VGS(th) | 2.8 V (typ) - Ensures clean turn-on with standard logic-level gate drivers while maintaining noise immunity. |
| Ciss | 2670 pF (max) - Defines input capacitance affecting gate drive loop stability and Miller effect in high-speed switching. |
Pinout & Package
The CSD19533Q5AT uses an 8-pin VSONP (DQJ) package - SON 5 mm × 6 mm - with exposed thermal pad (pin 8) and symmetrical source/drain layout optimized for high-current PCB routing and thermal dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | Four parallel source terminals reduce source inductance and improve current sharing in high-frequency switching. |
| 5 | Gate | Single gate input with 1.2–2.4 Ω internal series resistance; requires low-impedance driver for optimal dV/dt control. |
| 6, 7, 8 | Drain | Three drain terminals connected to large internal copper clip - supports high pulsed current (231 A) and low RDS(on). |
| Exposed Pad (Pin 8) | Thermal / Drain | Electrically tied to drain and serves as primary thermal path; must be soldered to ≥1-in² 2-oz Cu PCB pad for RθJC = 1.3 °C/W. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low Qg and Qgd | 27 nC total gate charge and only 4.9 nC gate-to-drain charge - minimizes Miller plateau time and improves efficiency in hard-switched SMPS. |
| Avalanche rated | 106 mJ single-pulse avalanche energy - eliminates need for external snubbers in flyback and boost converters under transient overvoltage. |
| Low RθJC | 1.3 °C/W junction-to-case - enables direct thermal coupling to heatsinks or copper planes, critical for compact 100 W+ power modules. |
| SON 5 mm × 6 mm package | 8-pin VSONP with exposed drain pad - supports automated optical inspection (AOI), high-density layout, and >90% solder joint reliability per IPC-A-610. |
| RoHS & halogen-free | Pb-free terminal plating and halogen-free molding compound - compliant with IPC-1752A and EU Directive 2011/65/EU for industrial and telecom deployments. |
Applications
| Primary Side Telecom Power Supply | Secondary Side Synchronous Rectifier |
|---|---|
|
Use Scenario: High-efficiency AC/DC front-end in 48 V telecom rectifiers operating at 200–500 kHz switching frequency. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 100 V bus transients and delivering 15–20 A peak current. Use Value: 7.8 mΩ RDS(on) and 27 nC Qg reduce conduction + switching losses by >15% vs. legacy TO-220 MOSFETs, enabling 94%+ efficiency at full load. |
Use Scenario: Secondary-side synchronous rectification in isolated LLC resonant DC/DC converters for server PSUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes, driven by transformer-coupled gate signals. Use Value: Body diode VSD = 0.8–1.0 V and Qrr = 163 nC enable fast, low-loss commutation - reducing rectifier losses by 40% compared to 40 V Schottkys. |
| Brushless DC Motor Control | Industrial DC-DC Point-of-Load Converter |
|
Use Scenario: Half-bridge leg in 24–48 V BLDC inverters for HVAC fans and industrial pumps. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter, operating with 10–20 kHz PWM and 30 A peak phase current. Use Value: Avalanche rating (EAS = 106 mJ) withstands inductive kickback during fault conditions, eliminating need for external clamping diodes. |
Use Scenario: Step-down converter supplying 3.3 V/20 A to FPGA or ASIC in programmable logic controllers (PLCs). IC Role / Device Role / Timing Role: High-current power stage switch in multiphase buck topology with 1 MHz switching frequency. Use Value: Ultra-low Qgd/Qg ratio (4.9/27 ≈ 0.18) suppresses shoot-through risk and improves duty-cycle linearity across temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP040N10N5 | 100 V, 4.0 mΩ RDS(on), 44 nC Qg, PG-TDSON-8 package (5 × 6 mm same footprint) | Lower RDS(on) but higher gate charge increases driver loss; not avalanche rated | Prefer CSD19533Q5AT where avalanche ruggedness and low Qg dominate over minimal RDS(on) reduction. |
| Vishay SiR626DP | 100 V, 6.2 mΩ RDS(on), 31 nC Qg, PowerPAK® SO-8L (same pinout, different thermal pad layout) | Higher RDS(on) than CSD19533Q5AT but better SOA at high TJ; no official avalanche rating | Choose CSD19533Q5AT when board space is constrained and thermal pad soldering is feasible; SiR626DP suits legacy SO-8 layouts. |
Compared with IPP040N10N5 and SiR626DP, the CSD19533Q5AT uniquely balances ultra-low Qg (27 nC), certified avalanche capability (106 mJ), and industry-standard SON 5×6 mm packaging - making it optimal for high-reliability telecom and motor control where switching efficiency and transient robustness are co-critical.
Availability
CSD19533Q5AT is available at Aetrix Electronics and suitable for telecom power supplies, synchronous rectifiers, and brushless DC motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for CSD19533Q5AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management ICs, with decades of expertise in high-reliability power devices.
The CSD19533Q5AT belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-frequency, high-efficiency power conversion in telecom infrastructure, industrial automation, and motor control systems.
FAQ
What is the maximum continuous drain current for CSD19533Q5AT at 25°C ambient temperature?
The CSD19533Q5AT supports 13 A continuous drain current at TA = 25 °C when mounted on a 1-inch², 2-oz. copper pad on FR4 PCB (RθJA = 50 °C/W). This value is limited by package thermal constraints-not silicon - and drops to 75 A at TC = 25 °C under case-cooled conditions per TI's SLPS486A datasheet.
Does CSD19533Q5AT have avalanche capability, and what is its rated energy?
Yes, the CSD19533Q5AT is fully avalanche rated with a single-pulse avalanche energy (EAS) of 106 mJ, tested at ID = 46 A, L = 0.1 mH, and RG = 25 Ω. This rating is explicitly specified in the Absolute Maximum Ratings table of the TI SLPS486A datasheet and enables robust operation in inductive switching circuits without external protection.
What is the gate threshold voltage range for CSD19533Q5AT, and how does it vary with temperature?
The CSD19533Q5AT has a gate threshold voltage (VGS(th)) range of 2.2 V to 3.4 V at TA = 25 °C, with a typical value of 2.8 V. As shown in Figure 6 of the SLPS486A datasheet, VGS(th) decreases linearly with rising junction temperature - approximately 2.4 V at 125 °C - ensuring predictable turn-on behavior across industrial temperature ranges.
Can CSD19533Q5AT replace older TO-220 MOSFETs in existing designs without layout changes?
No - the CSD19533Q5AT uses an 8-pin SON 5 mm × 6 mm package with bottom-side thermal pad, which is physically and thermally incompatible with through-hole TO-220 footprints. Successful migration requires PCB redesign to accommodate the surface-mount VSONP layout, thermal pad stencil, and updated gate drive impedance matching per TI's SLPA005 layout guidelines.
What is the recommended gate resistor value for CSD19533Q5AT in a 300 kHz hard-switched buck converter?
For a 300 kHz buck converter, TI recommends a gate resistor (RG) between 2 Ω and 5 Ω to balance switching speed and EMI. The CSD19533Q5AT's low Qg (27 nC) and Qgd (4.9 nC) allow fast turn-on/turn-off while minimizing ringing - verified in TI's reference designs using RG = 3.3 Ω with UCC27531 drivers per application note SLVA727.
CSD19533Q5AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- NexFET™
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.4mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id:
- 3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2670 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.2W (Ta), 96W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-VSONP (5x6)
CSD19533Q5AT FAQ
1.How can I place an order for CSD19533Q5AT through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD19533Q5AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD19533Q5AT reliable?
The price and inventory of CSD19533Q5AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD19533Q5AT is usually 5 days.
3.What payment methods are accepted for CSD19533Q5AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD19533Q5AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD19533Q5AT?
CSD19533Q5AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD19533Q5AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD19533Q5AT?
For technical support, including CSD19533Q5AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD19533Q5AT requirements.
6.How does Aetrix verify that CSD19533Q5AT is sourced from the original manufacturer or authorized distributors?
All CSD19533Q5AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD19533Q5AT meets industry standards.
7.What is the process for return or replacement of CSD19533Q5AT?
All CSD19533Q5AT units undergo pre-shipment inspection (PSI). If there is an issue with CSD19533Q5AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD19533Q5AT part is unused and in its original packaging.
Return procedure for CSD19533Q5AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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