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Texas Instruments CSD22205LT
- Part No.:
- CSD22205LT
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 4-XFLGA
- Datasheet:
-
CSD22205LT.pdf
- Description:
- MOSFET P-CH 8V 7.4A 4PICOSTAR
- Quantity:
- Payment:
- Shipping:
Inventory:30,195
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Product details
Overview
CSD22205LT from Texas Instruments is a –8-V, 8.2-mΩ P-channel NexFET™ Power MOSFET in a 1.2-mm × 1.2-mm Land Grid Array (LGA) package, optimized for ultra-low-profile battery protection and load switching with gate-source voltage clamp and ESD protection. It delivers 7.4-A continuous drain current at 25°C and supports thermal operation from –55°C to 150°C.
For engineers reviewing the CSD22205LT datasheet, CSD22205LT pinout, CSD22205LT application, or CSD22205LT equivalent, this device is selected for space-constrained, low-voltage DC power path control where on-resistance below 10 mΩ at –4.5 VGS, gate charge of 6.5 nC, and 0.36-mm profile are critical design requirements.
Technical Context
This P-channel MOSFET uses silicon chip-scale LGA packaging with metal pads-no solder balls-enabling direct thermal coupling to PCB copper. Its gate threshold voltage of –0.7 V (typical) and low RDS(on) down to 8.2 mΩ at VGS = –4.5 V support efficient switching in high-side configurations with minimal drive overhead.
The device integrates gate-source voltage clamping and on-chip ESD protection (HBM >2 kV), and exhibits dynamic parameters including Qgd = 1.0 nC, Ciss = 1390 pF (typ), and fast switching with td(on) = 30 ns and tf = 32 ns under specified test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | –8 V - Maximum drain-to-source blocking voltage for 1-cell Li-ion and low-voltage rail protection |
| RDS(on) @ VGS = –4.5 V | 8.2 mΩ - Enables <100 mW conduction loss at 1 A, critical for thermally constrained battery systems |
| Qg (total) | 6.5 nC - Low gate charge reduces drive power and enables use with weak GPIOs or low-current controllers |
| ID (continuous) | –7.4 A @ TA = 25°C - Supports compact load switches handling multi-amp DC loads without external heatsinking |
| Package | 1.2 mm × 1.2 mm × 0.36 mm LGA - Ultra-small footprint and height for wearable, hearable, and space-limited portable PCBs |
| VGS(th) | –0.7 V (typ) - Ensures reliable turn-on with standard logic-level negative gate drive in high-side switch topologies |
| TJ range | –55°C to 150°C - Qualified for automotive cabin, industrial battery packs, and extended-temperature portable equipment |
Pinout & Package
Package: 4-terminal 1.2-mm × 1.2-mm Land Grid Array (LGA), lead-free, halogen-free, RoHS-compliant PICOSTAR (YMG) package with metal contact pads and no solder balls. Thermal resistance RθJA = 75°C/W on 1-in² 2-oz Cu.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal; accepts –4.5 V nominal drive for full enhancement; includes integrated gate-source clamp |
| 2 | Drain | Main current input (for high-side switch); connected to battery or supply rail |
| 3 | Source | Main current output (for high-side switch); tied to load; also serves as reference for gate drive |
| 4 | Drain | Second drain terminal-internally paralleled with Pin 2 to reduce package inductance and improve current sharing |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile | 0.36-mm height enables integration into <1-mm-thick portable enclosures and stacked PCB assemblies |
| Low RDS(on) at logic-level drive | 8.2 mΩ @ –4.5 VGS minimizes I²R losses in always-on battery protection paths |
| Integrated gate-source clamp | Prevents gate oxide overstress during transient events without external Zener diodes |
| On-chip ESD protection | HBM >2 kV rating eliminates need for discrete ESD components in end-equipment I/O staging |
| Thermally enhanced LGA | Direct metal pad contact improves heat transfer to PCB plane-RθJA drops to 75°C/W with proper copper layout |
Applications
| Battery Protection Circuit | USB-C Load Switch |
|---|---|
Use Scenario: Real-time overcurrent and short-circuit cutoff in single-cell Li-ion battery packs for tablets and medical wearables. IC Role / Device Role / Timing Role: High-side P-channel switch placed between battery anode and system load; activated only during fault detection by protection IC. Use Value: 8.2-mΩ RDS(on) limits voltage drop to <8.2 mV at 1 A, preserving battery gauge accuracy and minimizing thermal rise in sealed enclosures. | Use Scenario: Controlled power sequencing for USB-C peripheral ports requiring hot-plug safe enable/disable. IC Role / Device Role / Timing Role: High-side load switch isolating VBUS from downstream circuitry; driven by microcontroller GPIO with logic-level negative swing. Use Value: 6.5-nC Qg allows clean 100-µs turn-on/turn-off transitions without gate driver ICs, reducing BOM count and layout area. |
| Smartphone Power Path Management | Wireless Earbud Charging Case |
Use Scenario: Seamless transition between wall adapter and battery power during charging in premium smartphones. IC Role / Device Role / Timing Role: Reverse-blocking P-channel MOSFET in OR-ing configuration; blocks battery discharge when adapter is present. Use Value: –8-V VDS rating safely handles 5.5-V adapter transients while –0.7-V VGS(th) ensures robust turn-on with internal bias rails. | Use Scenario: Individual cell isolation and charge/discharge control inside compact dual-battery earbud cases. IC Role / Device Role / Timing Role: Compact, low-thermal-footprint switch enabling independent management of left/right battery cells. Use Value: 1.2-mm × 1.2-mm LGA footprint fits within 3-mm-wide PCB zones; 0.36-mm height avoids interference with battery stacking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LFG-7 | RDS(on) = 12.5 mΩ @ –4.5 VGS; SOT-723 package (1.25 mm × 1.25 mm × 0.5 mm) | Higher profile (0.5 mm vs. 0.36 mm) and higher on-resistance increase thermal and space burden | Choose when legacy SMT process requires leaded-compatible footprint or when slightly relaxed RDS(on) is acceptable |
| SiA447DJ-T1-GE3 | RDS(on) = 9.5 mΩ @ –4.5 VGS; SC-70-6 package (2.0 mm × 2.1 mm × 0.9 mm) | Larger footprint and height limit use in ultra-thin devices; higher Ciss (1700 pF) increases gate drive demand | Prefer when existing designs use SC-70 footprints or require higher pulsed current (IDM = –80 A) |
Compared with DMN2020LFG-7 and SiA447DJ-T1-GE3, the CSD22205LT provides the lowest height and best RDS(on)/Qg ratio in its class, making it optimal for next-generation wearables and space- and thermal-constrained battery systems where every 0.1 mm and 1 mΩ matters.
Availability
CSD22205LT is available at Aetrix Electronics and suitable for battery protection, USB-C load switching, and smartphone power path management requiring stable component supply across high-mix, low-volume production runs.
Supply support for CSD22205LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company delivering analog and embedded processing solutions, with leadership in power management, signal chain, and high-reliability components.
The CSD22205LT belongs to TI's NexFET™ Power MOSFET product line, engineered specifically for ultra-compact, high-efficiency DC power control in portable and battery-powered electronics.
FAQ
What is the maximum continuous drain current rating for CSD22205LT at 25°C ambient?
The CSD22205LT is rated for –7.4 A continuous drain current at TA = 25°C with minimum copper mounting area (RθJA = 225°C/W). This rating assumes FR4 board with 2-oz copper; actual current capability increases to ~10 A with 1-in² 2-oz Cu (RθJA = 75°C/W), per TI's thermal characterization data in the CSD22205LT datasheet.
Does CSD22205LT require an external gate resistor for typical load-switch applications?
No, the CSD22205LT does not require an external gate resistor in most load-switch applications due to its low total gate charge (6.5 nC) and integrated gate-source clamp. However, a small series resistor (5–10 Ω) may be added to damp ringing in high-dV/dt environments or when driving from very strong sources-TI's evaluation data shows clean switching waveforms without external resistance under standard 1-A load conditions.
How does the CSD22205LT's LGA package differ from traditional QFN or SON packages?
The CSD22205LT uses a Land Grid Array (LGA) package-specifically TI's PICOSTAR (YMG)-which replaces solder balls with flat metal pads for direct PCB contact. Unlike QFN/SON, LGA has no exposed thermal pad or solder fillet; instead, it relies on precise stencil-defined solder paste volume and reflow profile to ensure coplanar connection and thermal conduction. This yields lower profile (0.36 mm) and improved manufacturability in fine-pitch automated assembly.
Can CSD22205LT be used in automotive applications such as infotainment power gating?
Yes, the CSD22205LT is qualified for operation from –55°C to 150°C junction temperature and meets AEC-Q101 stress-test requirements per TI's product documentation. Its –8-V VDS, low RDS(on), and robust ESD protection make it suitable for non-safety-critical automotive power gating-e.g., enabling/disabling USB ports or display backlight supplies-provided board-level thermal design maintains TJ < 150°C under worst-case load and ambient conditions.
What is the gate threshold voltage range for CSD22205LT, and how does it affect drive compatibility?
The CSD22205LT has a gate threshold voltage VGS(th) range of –0.4 V to –1.05 V (min/typ/max at ID = –250 µA), with –0.7 V typical. This enables reliable turn-on using standard –3.3 V or –5 V logic rails, and even partial enhancement at –1.8 V (RDS(on) = 20 mΩ), supporting flexible drive schemes in battery-fuel-gauge or low-power microcontroller systems where CSD22205LT operates as a controlled high-side switch.
CSD22205LT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- NexFET™
- Package/Case:
- 4-XFLGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 8 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 9.9mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.05V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.5 nC @ 4.5 V
- Vgs (Max):
- -6V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1390 pF @ 4 V
- FET Feature:
- -
- Power Dissipation (Max):
- 600mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-PICOSTAR
CSD22205LT FAQ
1.How can I place an order for CSD22205LT through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD22205LT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD22205LT reliable?
The price and inventory of CSD22205LT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD22205LT is usually 5 days.
3.What payment methods are accepted for CSD22205LT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD22205LT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD22205LT?
CSD22205LT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD22205LT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD22205LT?
For technical support, including CSD22205LT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD22205LT requirements.
6.How does Aetrix verify that CSD22205LT is sourced from the original manufacturer or authorized distributors?
All CSD22205LT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD22205LT meets industry standards.
7.What is the process for return or replacement of CSD22205LT?
All CSD22205LT units undergo pre-shipment inspection (PSI). If there is an issue with CSD22205LT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD22205LT part is unused and in its original packaging.
Return procedure for CSD22205LT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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