Texas Instruments CSD23201W10

Overview

CSD23201W10 from Texas Instruments is a P-channel NexFET™ power MOSFET in a 1.0 mm × 1.0 mm wafer-level chip-scale package (WLCSP), designed for ultra-low on-resistance and gate charge in space-constrained load switch and battery protection circuits. It delivers R_DS(on) = 66 mΩ at V_GS = –4.5 V, supports –2.2 A continuous drain current, and operates across –55°C to 150°C junction temperature.

For engineers reviewing the CSD23201W10 datasheet, CSD23201W10 pinout, CSD23201W10 application, or CSD23201W10 equivalent, key selection criteria include its 0.62 mm profile, 1.8 nC total gate charge, –12 V drain-to-source rating, and WLCSP thermal performance with R_θJA = 125°C/W on 1 in² copper - critical for compact portable power management designs.

Technical Context

This device implements a single P-channel enhancement-mode silicon MOSFET optimized for low-voltage DC switching. Its gate threshold voltage of –0.6 V (typ) enables direct control from 1.8 V–3.3 V logic rails, while ultra-low Q_gd (0.26 nC) and Q_g (1.8 nC) minimize switching losses in high-frequency load switching.

The WLCSP package features solder-ball terminations with source (B1), gate (A1), and dual-drain (A2/B2) terminals, enabling board-level thermal conduction through the exposed drain pads. Its 245°C/W junction-to-ambient thermal resistance under minimal copper area reflects design intent for thermally efficient integration into thin-profile battery-powered systems.

Key Specifications

Pinout & Package

Package: 1.0 mm × 1.0 mm wafer-level chip-scale package (WLCSP), 0.62 mm maximum height, with four solder balls (A1, A2, B1, B2) and no external leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with DMN2020LFG-7 and SI2301DDS-T1-BE3, the CSD23201W10 offers superior space efficiency, lower switching loss, and wider voltage margin - making it optimal for next-generation wearables and ultra-thin mobile accessories where footprint and thermal density are primary constraints.

Availability

CSD23201W10 is available at Aetrix Electronics and suitable for battery protection, USB load switching, and smartphone power path management requiring stable component supply and long-term lifecycle support.

Supply support for CSD23201W10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, delivering analog and embedded processing solutions for industrial, automotive, and personal electronics markets.

The CSD23201W10 belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-efficiency, space-constrained DC power switching in portable and wearable devices.

FAQ

What is the maximum continuous drain current rating for the CSD23201W10?

The CSD23201W10 supports –2.2 A continuous drain current at case temperature T_C = 25°C with sufficient PCB copper area. Derating applies above 25°C per the R_θJA = 125°C/W thermal resistance curve; at 85°C ambient, usable current drops to approximately –1.5 A under typical 1 in² copper layout.

Does the CSD23201W10 require a gate resistor for safe operation?

The CSD23201W10 does not require an external gate resistor for basic on/off switching, but a 10–100 Ω series resistor is recommended to dampen ringing and control slew rate in high-speed applications. The device's low Q_g (1.8 nC) makes it compatible with weak GPIO drivers, though layout parasitics may necessitate minor gate tuning.

Can the CSD23201W10 be used in a high-side switch configuration with 3.3 V logic control?

Yes - the CSD23201W10's V_GS(th) of –0.6 V (typ) and R_DS(on) of 77 mΩ at V_GS = –2.5 V ensure reliable enhancement with 3.3 V logic driving the gate relative to source. For full on-state performance, –4.5 V gate drive is ideal, but –2.5 V yields acceptable conduction loss in most portable applications.

What is the thermal resistance from junction to ambient for the CSD23201W10 on a standard PCB?

When mounted on 1 in² of 2 oz. copper on FR4, the CSD23201W10 achieves R_θJA = 125°C/W. With minimal copper (no thermal pad), R_θJA rises to 245°C/W. The WLCSP package relies heavily on PCB copper area for heat spreading - land pattern adherence per TI's M0152-01 recommendation is essential for rated thermal performance.

Is the CSD23201W10 suitable for reverse polarity protection in a 5 V system?

Yes - the CSD23201W10's –12 V V_DS rating provides ample margin for 5 V systems, and its P-channel topology enables simple high-side reverse polarity protection. With source tied to input and drain to load, it blocks reverse current while adding only ~66 mV dropout at 0.5 A, outperforming Schottky diode solutions in efficiency and thermal footprint.