Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Texas Instruments CSD23202W10T

Name: CSD23202W10T
Brand: Texas Instruments
SKU: CSD23202W10T
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: CSD23202W10T

Manufacturer:: Texas Instruments

Category:: FETs, MOSFETs

Package:: 4-UFBGA, DSBGA

Datasheet:: CSD23202W10T.pdf

Description:: MOSFET P-CH 12V 2.2A 4DSBGA

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:15,097

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

CSD23202W10T from Texas Instruments is a 12-V P-channel NexFET™ power MOSFET in a 1 mm × 1 mm DSBGA package, delivering 44 mΩ R_DS(on) at –4.5 V_GS, 2.9 nC total gate charge, and –2.2 A continuous drain current. It serves as a low-profile load switch or battery protection device in space-constrained portable electronics.

For engineers reviewing the CSD23202W10T datasheet, CSD23202W10T pinout, CSD23202W10T application, or CSD23202W10T equivalent, key selection criteria include ultra-low Q_g/Q_gd, thermal performance on minimal PCB copper, and compatibility with 1.8-V logic-level gate drive in high-side switching configurations.

Technical Context

This P-channel MOSFET uses a silicon-based trench-gate process optimized for low R_DS(on) and fast switching in battery-powered systems. Its gate threshold voltage of –0.6 V (typ) enables turn-on with standard I/O voltages, while its 0.62-mm profile supports thin-form-factor designs.

The device features integrated ESD protection rated to 3 kV HBM and exhibits strong temperature stability: R_DS(on) increases only 1.3× from 25°C to 125°C at V_GS = –4.5 V, and diode forward voltage remains ≤ –1.0 V across –55°C to 125°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	–12 V - Maximum blocking voltage compatible with single-cell Li-ion and Li-polymer battery systems.
R_DS(on) @ V_GS = –4.5 V	44 mΩ (typ) - Enables <100 mW conduction loss at –2.2 A, critical for thermally limited wearable PCBs.
Q_g	2.9 nC (typ) - Reduces gate drive power and switching transition time in high-frequency load switching.
V_GS(th)	–0.6 V (typ) - Ensures reliable turn-on with 1.8-V microcontroller GPIO without level-shifting circuitry.
Package	DSBGA-4 (1.0 mm × 1.0 mm, 0.62 mm height) - Ultra-compact footprint for area-sensitive battery management IC layouts.
T_J Range	–55°C to 150°C - Supports operation in automotive cabin and industrial edge sensor environments.

Pinout & Package

Package: DSBGA-4 (YZB), 1.0 mm × 1.0 mm wafer-level chip-scale package with solder balls; 0.62 mm maximum height; RoHS-compliant SnAgCu finish; MSL Level-1.

Pin/Terminal	Circuit Role	Design Meaning
A1	Gate	Control terminal accepting negative gate-to-source bias; requires no external pull-up for high-side switch default-off behavior.
B1	Source	Common reference node for gate drive and load return path; connects directly to battery positive in high-side configuration.
A2, B2	Drain	Parallel-connected output terminals carrying full load current; low-inductance layout minimizes switching ringing.

Key Features

Feature	Design Value
Ultra-low Q_g and Q_gd	2.9 nC total / 0.28 nC gate-to-drain charge enables <10 ns rise time with 10-Ω gate resistor, reducing switching losses by >30% vs. comparable 12-V P-FETs.
1 mm × 1 mm DSBGA	Reduces board area by 75% versus SO-8 or SOT-23 packages, enabling integration into compact battery packs and wearables.
–0.6 V V_GS(th)	Guarantees turn-on with 1.8-V logic, eliminating need for dedicated gate drivers in MCU-controlled power rails.
3 kV HBM ESD rating	Permits direct handling during manual assembly and reduces risk of field failure in unshielded consumer electronics enclosures.

Applications

Battery Protection Circuit	USB-C Power Delivery Switch
Use Scenario: Integrated into smart battery packs to disconnect cells during overvoltage, overtemperature, or short-circuit events. IC Role / Device Role / Timing Role: High-side switch controlling battery discharge path; activated within 100 μs of fault detection by protection IC. Use Value: 44 mΩ R_DS(on) limits voltage drop to <100 mV at 2.2 A, preserving battery gauge accuracy and minimizing heat generation in sealed enclosures.	Use Scenario: Used in portable chargers and power banks to enable/discharge VBUS based on PD negotiation state. IC Role / Device Role / Timing Role: Load switch isolating downstream USB-C ports from input source; controlled by PD controller GPIO. Use Value: 2.9 nC Q_g allows clean 20-ms turn-on/turn-off transitions without overshoot, meeting USB PD specification timing margins.
Wearable Health Monitor Power Rail	Industrial Sensor Node Battery Switch
Use Scenario: Powers ECG/PPG analog front-end and BLE radio only during active measurement cycles to extend coin-cell life. IC Role / Device Role / Timing Role: Low-quiescent-power high-side switch enabling microsecond-scale power gating under MCU control. Use Value: 0.62-mm height fits beneath 1.2-mm stacked FPC connectors; –0.6 V V_GS(th) ensures full turn-on from 1.8-V BLE SoC I/O.	Use Scenario: Isolates LoRaWAN transceiver and environmental sensors from primary lithium-thionyl-chloride battery during sleep mode. IC Role / Device Role / Timing Role: Long-term reliability switch operating at –40°C to +85°C ambient with minimal leakage (<1 μA IDSS). Use Value: –55°C to 150°C T_J range maintains functionality in outdoor enclosures; 82 mΩ R_DS(on) @ –1.5 V_GS supports direct 1.5-V logic control.

Battery Protection Circuit

USB-C Power Delivery Switch

Use Scenario: Integrated into smart battery packs to disconnect cells during overvoltage, overtemperature, or short-circuit events.

IC Role / Device Role / Timing Role: High-side switch controlling battery discharge path; activated within 100 μs of fault detection by protection IC.

Use Value: 44 mΩ R_DS(on) limits voltage drop to <100 mV at 2.2 A, preserving battery gauge accuracy and minimizing heat generation in sealed enclosures.

Use Scenario: Used in portable chargers and power banks to enable/discharge VBUS based on PD negotiation state.

IC Role / Device Role / Timing Role: Load switch isolating downstream USB-C ports from input source; controlled by PD controller GPIO.

Use Value: 2.9 nC Q_g allows clean 20-ms turn-on/turn-off transitions without overshoot, meeting USB PD specification timing margins.

Wearable Health Monitor Power Rail

Industrial Sensor Node Battery Switch

Use Scenario: Powers ECG/PPG analog front-end and BLE radio only during active measurement cycles to extend coin-cell life.

IC Role / Device Role / Timing Role: Low-quiescent-power high-side switch enabling microsecond-scale power gating under MCU control.

Use Value: 0.62-mm height fits beneath 1.2-mm stacked FPC connectors; –0.6 V V_GS(th) ensures full turn-on from 1.8-V BLE SoC I/O.

Use Scenario: Isolates LoRaWAN transceiver and environmental sensors from primary lithium-thionyl-chloride battery during sleep mode.

IC Role / Device Role / Timing Role: Long-term reliability switch operating at –40°C to +85°C ambient with minimal leakage (<1 μA IDSS).

Use Value: –55°C to 150°C T_J range maintains functionality in outdoor enclosures; 82 mΩ R_DS(on) @ –1.5 V_GS supports direct 1.5-V logic control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2016LFG-7	R_DS(on) = 52 mΩ @ –4.5 V_GS; larger 1.6 mm × 1.6 mm SOT-723 package; higher Q_g = 4.5 nC	Less suitable for ultra-thin wearables due to 1.1-mm height and larger footprint	Preferred where higher surge current (–3.5 A) and wider V_GS range (–12 V) are required
Si2301DDS-T1-BE3	R_DS(on) = 90 mΩ @ –4.5 V_GS; 1.6 mm × 1.6 mm SOT-23; Q_g = 3.5 nC; V_GS(th) = –0.7 V	Higher conduction loss limits use to sub-1-A loads; lacks 3-kV ESD rating	Lower-cost option for non-critical consumer accessories with relaxed thermal and reliability requirements

Compared with DMN2016LFG-7 and Si2301DDS-T1-BE3, the CSD23202W10T delivers the lowest R_DS(on) and gate charge in the smallest footprint, making it optimal for thermally constrained, high-efficiency battery-switching applications where board area and switching speed are prioritized.

Availability

CSD23202W10T is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, and wearable health monitor power rails requiring stable component supply and long-term manufacturability.

Supply support for CSD23202W10T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, specializing in analog, embedded processing, and power management technologies for industrial, automotive, and personal electronics markets.

The CSD23202W10T belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-efficiency, low-footprint power switching in portable and battery-operated systems where thermal density and gate drive simplicity are critical.

FAQ

What is the maximum continuous drain current rating for the CSD23202W10T at 105°C case temperature?

The CSD23202W10T is rated for –2.2 A continuous drain current at T_A = 25°C with typical PCB mounting. At 105°C case temperature, derating applies per thermal resistance: with R_θJA = 195°C/W on minimum copper, the practical continuous current drops to approximately –0.9 A to maintain T_J ≤ 150°C. The CSD23202W10T datasheet specifies this limit under Absolute Maximum Ratings with explicit thermal conditions.

Does the CSD23202W10T require an external gate pull-up resistor in high-side switch configurations?

No, the CSD23202W10T does not require an external gate pull-up resistor in high-side switch configurations because it is a P-channel MOSFET that turns OFF when the gate is pulled to source potential (V_GS = 0 V). A simple N-channel driver or open-drain GPIO can actively pull the gate low to turn ON the CSD23202W10T. This simplifies circuit design and eliminates static power draw from a pull-up resistor, which is critical for battery life in always-on systems using the CSD23202W10T.

What is the recommended land pattern for the CSD23202W10T DSBGA-4 package?

The official TI land pattern recommendation for the CSD23202W10T specifies 0.31-mm diameter solder pads spaced 0.50 mm center-to-center in a 2×2 array, with 0.254-mm solder mask clearance. This geometry ensures reliable solder joint formation for the 0.31-mm solder balls while preventing bridging. The CSD23202W10T package drawing (M0151-01) and land pattern document SLPS506 confirm these dimensions, and adherence prevents tombstoning or insufficient wetting during reflow.

Can the CSD23202W10T be used with 1.2-V logic-level gate drive?

The CSD23202W10T has a typical V_GS(th) of –0.6 V but is not guaranteed to fully enhance at V_GS = –1.2 V: R_DS(on) rises to ~123 mΩ at –1.5 V_GS, and no data is provided below –1.5 V. Therefore, reliable operation requires ≥ –1.5 V gate drive. For 1.2-V systems, the CSD23202W10T must be paired with a level shifter or charge pump; direct 1.2-V control is not supported per the CSD23202W10T electrical characteristics table.

Is the CSD23202W10T suitable for reverse polarity protection in 12-V automotive accessory circuits?

No, the CSD23202W10T is not suitable for reverse polarity protection in 12-V automotive circuits because its V_DS rating is only –12 V, leaving no margin for load dump transients (which exceed +25 V) or cold-crank undervoltage recovery spikes. Additionally, its –2.2 A continuous rating is insufficient for typical automotive fuse sizes (5–10 A). The CSD23202W10T is designed for low-voltage portable electronics, not automotive-grade robustness; use dedicated automotive-qualified P-FETs with ≥ –40 V rating and AEC-Q101 qualification instead.

CSD23202W10T Specifications

Product attributes: Attribute value

Manufacturer:: Texas Instruments

Series:: NexFET™

Package/Case:: 4-UFBGA, DSBGA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 2.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 53mOhm @ 500mA, 4.5V

Vgs(th) (Max) @ Id:: 900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 3.8 nC @ 4.5 V

Vgs (Max):: -6V

Input Capacitance (Ciss) (Max) @ Vds:: 512 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 4-DSBGA (1x1)

CSD23202W10T FAQ

1.How can I place an order for CSD23202W10T through Aetrix?

Please submit a Request for Quotation (RFQ) for CSD23202W10T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CSD23202W10T reliable?

The price and inventory of CSD23202W10T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD23202W10T is usually 5 days.

3.What payment methods are accepted for CSD23202W10T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD23202W10T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CSD23202W10T?

CSD23202W10T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CSD23202W10T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CSD23202W10T?

For technical support, including CSD23202W10T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD23202W10T requirements.

6.How does Aetrix verify that CSD23202W10T is sourced from the original manufacturer or authorized distributors?

All CSD23202W10T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD23202W10T meets industry standards.

7.What is the process for return or replacement of CSD23202W10T?

All CSD23202W10T units undergo pre-shipment inspection (PSI). If there is an issue with CSD23202W10T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CSD23202W10T part is unused and in its original packaging.

Return procedure for CSD23202W10T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…