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Texas Instruments CSD23203W
- Part No.:
- CSD23203W
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 6-UFBGA, DSBGA
- Datasheet:
-
CSD23203W.pdf
- Description:
- MOSFET P-CH 8V 3A 6DSBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,215
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Product details
Overview
CSD23203W from Texas Instruments is a P-Channel NexFET™ Power MOSFET in a 1.0-mm × 1.5-mm wafer-level DSBGA package, rated for –8 V drain-to-source voltage, 16.2 mΩ RDS(on) at VGS = –4.5 V, and –3 A continuous drain current - optimized for compact battery protection and load switching circuits in space-constrained portable electronics.
For engineers reviewing the CSD23203W datasheet, CSD23203W pinout, CSD23203W application, or CSD23203W equivalent, key selection criteria include ultra-low gate charge (4.9 nC), thermal performance on minimal PCB copper (RθJA = 170°C/W), and verified operation across –55°C to 150°C junction temperature range.
Technical Context
The CSD23203W employs a silicon-based P-channel trench MOSFET structure with integrated body diode, designed for low-voltage DC power path control. Its gate threshold voltage of –0.8 V (typ) enables direct interface with 1.8-V logic, while low Qgd (0.6 nC) supports fast switching with reduced Miller-induced turn-off delay (td(off) = 58 ns).
Thermal design leverages the DSBGA's copper pillar interconnects and 0.62-mm profile to achieve 55°C/W RθJA when mounted on 1-in² 2-oz copper - critical for sustained 0.75 W power dissipation in thermally isolated battery management modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | –8 V - Maximum blocking voltage for single-cell Li-ion and Li-polymer battery systems (≤4.2 V nominal). |
| RDS(on) @ VGS = –4.5 V | 16.2 mΩ - Enables ≤25 mW conduction loss at –1.5 A, minimizing self-heating in always-on protection FETs. |
| Qg | 4.9 nC - Reduces gate drive power and allows use of low-current GPIOs or small driver ICs in portable designs. |
| VGS(th) | –0.8 V (typ) - Ensures reliable turn-on with 1.8-V or 2.5-V microcontroller I/O without level shifting. |
| ID (cont) | –3 A - Supports peak load currents in USB-C PD sink paths, smart battery packs, and e-fuse applications. |
| RθJA | 170°C/W (min pad) - Defines worst-case thermal rise under constrained layout; 55°C/W achievable with 1-in² copper. |
| Package | DSBGA (YZC), 1.0 mm × 1.5 mm × 0.62 mm - Wafer-level chip-scale package enabling <1.5 mm² board area usage. |
Pinout & Package
Package: DSBGA (YZC), 6-terminal wafer-level ball grid array with 0.4-mm pitch, 1.0 mm × 1.5 mm footprint, and 0.62-mm height. Copper pillar interconnects ensure robust solder joint reliability and low inductance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| C1, C2 | Drain | Main high-side current path; electrically tied to die drain metallization and top-side thermal pad. |
| A1 | Gate | Control terminal; requires <100 nA leakage budget and <4.9 nC charge for full enhancement. |
| A2, B1, B2 | Source | Power return path and reference node; all three terminals internally shorted to minimize source inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low Qg and Qgd | 4.9 nC total gate charge and only 0.6 nC gate-to-drain charge - minimizes switching losses and improves EMI behavior in high-frequency load switches. |
| Low RDS(on) at low VGS | 22 mΩ at –2.5 V and 35 mΩ at –1.8 V - enables efficient operation directly from system rails without dedicated gate bias. |
| Small footprint & low profile | 1.0 mm × 1.5 mm area and 0.62-mm height - fits beneath thin batteries or in tight wearable PCB stacks where height <0.7 mm is mandatory. |
| Wafer-level CSP construction | DSBGA package with SNAGCU ball finish and Level-1 MSL rating - supports standard Pb-free reflow without moisture sensitivity concerns. |
| Integrated body diode | VSD = –0.75 V at –1.5 A - provides controlled reverse-current path during battery cell balancing or hot-swap events. |
Applications
| Battery Protection Circuit | USB-C Load Switch |
|---|---|
|
Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Primary protection FET placed between battery anode and system load, controlled by battery management IC. Use Value: 16.2 mΩ RDS(on) limits voltage drop to <25 mV at 1.5 A, preserving battery runtime while enabling fast fault response via low Qg. |
Use Scenario: Controlled power sequencing for USB-C peripheral ports with inrush current limiting. IC Role / Device Role / Timing Role: High-side load switch isolating VBUS from downstream circuitry during plug/unplug events. Use Value: 0.62-mm height avoids interference with USB-C connector height; 58 ns td(off) ensures rapid disconnect during fault conditions. |
| Smartphone Power Path | Wireless Earbud Charging Case |
|
Use Scenario: Seamless transition between wall adapter and battery power in dual-input power management. IC Role / Device Role / Timing Role: Back-to-back P-FET pair (with companion N-FET) implementing ideal diode OR-ing function. Use Value: Low VGS(th) (–0.8 V) allows gate drive from internal LDO; ultra-low Qgd prevents shoot-through during dynamic voltage transitions. |
Use Scenario: Isolating main Li-ion cell from charging circuitry and earbud output stage to prevent leakage during storage. IC Role / Device Role / Timing Role: Always-on isolation FET in battery discharge path, controlled by low-power MCU GPIO. Use Value: 100 nA IGSS leakage at –6 V gate bias extends shelf life; 1.0 × 1.5 mm footprint saves >30% area vs. SOT-23 alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG1012T | Higher RDS(on) (25 mΩ @ –4.5 V), larger SOT-723 package (1.2 × 1.6 mm), higher Qg (6.5 nC) | Less suitable for sub-1-mm height constraints; better suited for manual assembly or higher-power derating. | Choose DMG1012T only if board height >0.9 mm is acceptable and gate drive strength exceeds 5 mA. |
| Si2301DDS | Similar RDS(on) (15 mΩ @ –4.5 V) but larger SOT-23 package (2.9 × 1.6 mm); higher RθJA (200°C/W) | Requires more PCB area and exhibits poorer thermal performance in dense layouts. | Select Si2301DDS only when existing SOT-23 land pattern reuse is mandatory and thermal margin >40°C is available. |
Compared with DMG1012T and Si2301DDS, the CSD23203W delivers superior height efficiency (0.62 mm vs ≥0.9 mm), lower thermal resistance on minimal copper, and tighter gate charge control - making it the preferred choice for next-generation ultra-thin portable devices where board area and profile are non-negotiable.
Availability
CSD23203W is available at Aetrix Electronics and suitable for battery protection, USB-C load switching, and smartphone power path applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant wafer-level packaging.
Supply support for CSD23203W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management technologies, with over 90 years of innovation in high-reliability electronic components.
The CSD23203W belongs to TI's NexFET™ Power MOSFET product line, engineered specifically for ultra-compact, high-efficiency power switching in battery-powered consumer electronics - emphasizing low RDS(on), minimal gate charge, and wafer-level packaging.
FAQ
What is the maximum continuous drain current rating for the CSD23203W?
The CSD23203W is rated for –3 A continuous drain current at TA = 25°C with device operating at 105°C junction temperature. This rating assumes proper PCB copper area (minimum 1-in² 2-oz Cu yields RθJA = 55°C/W) and accounts for thermal derating above ambient. At elevated temperatures or minimal copper, the practical limit reduces to ~1.8 A to maintain TJ ≤ 150°C.
Does the CSD23203W require a gate resistor for stable switching?
The CSD23203W does not mandate an external gate resistor for basic functionality, but a 5–10 Ω series resistor is recommended to dampen ringing caused by its ultra-low Qgd (0.6 nC) and parasitic package inductance. TI's characterization used RG = 10 Ω for timing measurements (td(on) = 14 ns, td(off) = 58 ns), confirming stability under typical GPIO-driven conditions.
Can the CSD23203W be used in a back-to-back configuration for AC blocking?
Yes, the CSD23203W is commonly deployed in back-to-back P-channel configuration with a companion N-channel MOSFET to implement bidirectional blocking or ideal diode functionality. Its matched VGS(th) (–0.8 V) and symmetric RDS(on) characteristics enable balanced turn-on behavior, and its DSBGA package minimizes layout asymmetry that could cause shoot-through in high-speed switching.
What is the moisture sensitivity level (MSL) rating for the CSD23203W?
The CSD23203W carries a JEDEC MSL Level-1 rating with unlimited floor life at ≤30°C/85% RH, meaning it can be stored and assembled without dry pack or baking requirements. This applies to both reel formats (CSD23203W and CSD23203WT) and is enabled by its wafer-level DSBGA construction with SNAGCU ball finish and hermetic encapsulation.
How does the CSD23203W's body diode performance compare to discrete Schottky diodes?
The CSD23203W's integrated body diode has VSD = –0.75 V at –1.5 A and Qrr = 6.1 nC, which is less efficient than a low-VF Schottky (e.g., 0.3 V) but eliminates external component count and layout area. Its reverse recovery time (trr = 21 ns) is fast enough for ≤1 MHz synchronous rectification, and its soft recovery characteristic reduces EMI versus hard-switching diodes - making it suitable for compact battery charge path OR-ing.
CSD23203W Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- NexFET™
- Package/Case:
- 6-UFBGA, DSBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 8 V
- Current - Continuous Drain (Id) @ 25°C:
- 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 19.4mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.3 nC @ 4.5 V
- Vgs (Max):
- -6V
- Input Capacitance (Ciss) (Max) @ Vds:
- 914 pF @ 4 V
- FET Feature:
- -
- Power Dissipation (Max):
- 750mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-DSBGA (1x1.5)
CSD23203W FAQ
1.How can I place an order for CSD23203W through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD23203W on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD23203W reliable?
The price and inventory of CSD23203W are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD23203W is usually 5 days.
3.What payment methods are accepted for CSD23203W?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD23203W transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD23203W?
CSD23203W orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD23203W order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD23203W?
For technical support, including CSD23203W datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD23203W requirements.
6.How does Aetrix verify that CSD23203W is sourced from the original manufacturer or authorized distributors?
All CSD23203W products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD23203W meets industry standards.
7.What is the process for return or replacement of CSD23203W?
All CSD23203W units undergo pre-shipment inspection (PSI). If there is an issue with CSD23203W, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD23203W part is unused and in its original packaging.
Return procedure for CSD23203W:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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