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Texas Instruments CSD23203WT
- Part No.:
- CSD23203WT
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 6-UFBGA, DSBGA
- Datasheet:
-
CSD23203WT.pdf
- Description:
- MOSFET P-CH 8V 3A 6DSBGA
- Quantity:
- Payment:
- Shipping:
Inventory:39,033
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Product details
Overview
CSD23203WT from Texas Instruments is a P-Channel NexFET™ power MOSFET in a 1.0 mm × 1.5 mm wafer-level DSBGA package, rated for –8 V drain-to-source voltage, 16.2 mΩ RDS(on) at VGS = –4.5 V and –1.5 A, with ultra-low 4.9 nC total gate charge - optimized for high-efficiency battery protection and load switching in space-constrained portable electronics.
For engineers reviewing the CSD23203WT datasheet, CSD23203WT pinout, CSD23203WT application, or CSD23203WT equivalent, this device delivers verified low-profile thermal performance (RθJA = 55°C/W on 1-in² 2-oz Cu), precise threshold control (VGS(th) = –0.8 V), and robust pulsed current capability (–54 A) in a halogen-free, RoHS-compliant CSP.
Technical Context
This P-channel MOSFET uses a silicon-based trench-gate process to achieve ultra-low Qg (4.9 nC) and Qgd (0.6 nC), enabling fast switching with minimal drive loss in high-frequency load-switching topologies. Its negative VGS(th) (–0.8 V typ) ensures reliable turn-on with standard logic-level gate drivers in low-voltage systems.
The device features integrated body diode with VSD = –0.75 V at –1.5 A and low reverse recovery charge (Qrr = 6.1 nC), supporting efficient synchronous rectification and bidirectional current handling in battery management ICs. Thermal resistance is characterized for both minimum-pad (170°C/W) and enhanced-layout (55°C/W) PCB conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | –8 V - Maximum blocking voltage compatible with single-cell Li-ion (≤4.2 V) and dual-cell NiMH (≤3 V/cell) battery systems. |
| RDS(on) @ VGS = –4.5 V | 16.2 mΩ - Enables ≤25 mW conduction loss at –1.5 A, critical for thermally constrained wearable and IoT devices. |
| Qg (total) | 4.9 nC - Reduces gate-drive energy and switching transition time, lowering dynamic losses in 1–3 MHz DC/DC load switches. |
| VGS(th) | –0.8 V - Ensures full enhancement with common 1.8-V or 2.5-V microcontroller GPIO outputs without level-shifting. |
| ID (continuous) | –3 A @ TA = 25°C - Supports sustained load currents in compact battery packs with adequate copper area. |
| PD | 0.75 W - Limits maximum steady-state power dissipation; requires thermal design consideration for >1 A continuous operation. |
| Package | DSBGA-6 (YZC), 1.0 mm × 1.5 mm × 0.62 mm - Ultra-low profile wafer-level chip-scale package for height-sensitive applications like thin smartphones and medical patches. |
Pinout & Package
Package: DSBGA-6 (YZC), 1.0 mm × 1.5 mm wafer-level chip-scale package with 0.62-mm height and SNAGCU solder-ball finish, moisture sensitivity level 1 (260°C reflow).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| C1, C2 | Drain | High-current output node; electrically tied together - connects to battery cathode or system rail in high-side switch configurations. |
| A1 | Gate | Control input; requires negative VGS for turn-on; sensitive to ESD - must be protected per TI's ESD caution guidelines. |
| A2, B1, B2 | Source | Common return path; electrically tied - connects to ground or battery anode; serves as reference for gate drive and body diode conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low Qg and Qgd | 4.9 nC total / 0.6 nC gate-to-drain charge enables <100 ns switching transitions with minimal driver stress in portable power rails. |
| Low RDS(on) at logic-level VGS | 22 mΩ @ –2.5 V allows direct MCU GPIO control without external level shifters in 2.5-V–3.3-V systems. |
| Small footprint & low profile | 1.0 mm × 1.5 mm area and 0.62-mm height reduce PCB real estate and enable stacking under displays or batteries. |
| Thermally enhanced layout support | RθJA improves from 170°C/W (min pad) to 55°C/W (1-in² 2-oz Cu), enabling higher current density with proper copper planning. |
| Halogen-free & RoHS compliant | Meets JEDEC J-STD-609 Class 1 halogen limits (<1000 ppm Br+Cl) and EU RoHS Directive 2011/65/EU for green manufacturing. |
Applications
| Battery Protection Circuit | USB-C Load Switch |
|---|---|
|
Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs. IC Role / Device Role: High-side P-channel switch controlled by battery management IC (e.g., BQ297xx) to disconnect cell during fault conditions. Use Value: 16.2 mΩ RDS(on) minimizes voltage drop across protection FET, preserving usable battery capacity and reducing thermal rise during sustained 2-A discharge. |
Use Scenario: Power delivery path control in USB-C port controllers for host-side VBUS switching. IC Role / Device Role: Low-loss, fast-turnoff load switch enabling hot-plug detection and VBUS disconnection during cable removal. Use Value: 4.9 nC Qg supports sub-microsecond turn-off, meeting USB-C specification requirements for <10 μs VBUS ramp-down during detach events. |
| Wearable Device Power Rail | Medical Sensor Module |
|
Use Scenario: Always-on power gating for BLE radio and sensor subsystems in fitness trackers. IC Role / Device Role: Standby power switch isolating non-critical circuitry to extend battery life between sensor readings. Use Value: 1-μA IDSS leakage at –6.4 V ensures <1 μW standby loss, extending multi-week runtime in coin-cell-powered wearables. |
Use Scenario: Isolation of analog front-end (AFE) supply from noisy digital domains in implantable-grade biosensors. IC Role / Device Role: Low-noise, low-EMI power switch preventing digital switching transients from coupling into precision analog signal paths. Use Value: Low Ciss (703 pF typ) and Crss (133 pF typ) minimize capacitive feedthrough, maintaining >80 dB PSRR at 1 MHz in critical analog supply rails. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2301DDS | RDS(on) = 90 mΩ @ –2.5 V; Qg = 4.5 nC; SOT-23-3 package (3.0 mm × 1.4 mm) | Larger footprint and higher on-resistance limit use in <2-A, space-constrained designs; lacks wafer-level thermal performance. | Select when legacy SOT-23 layout compatibility is required and thermal budget allows higher conduction loss. |
| DMN2004LKQ | RDS(on) = 28 mΩ @ –4.5 V; Qg = 5.2 nC; 1.6 mm × 1.6 mm DFN package; rated –20 V | Higher voltage rating adds margin but increases gate charge and die size; less optimal for ≤8-V battery systems. | Prefer where system-level overvoltage transients exceed –8 V or where DFN assembly infrastructure is already established. |
Compared with Si2301DDS and DMN2004LKQ, the CSD23203WT delivers the lowest RDS(on) in the smallest footprint with best thermal efficiency per unit area - making it the preferred choice for next-generation ultra-thin battery-powered devices requiring <3-A load switching.
Availability
CSD23203WT is available at Aetrix Electronics and suitable for battery management, load switching, and battery protection applications requiring stable component supply, consistent wafer-level packaging, and long-term industrial lifecycle support.
Supply support for CSD23203WT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with over 90 years of innovation in high-reliability electronic components.
The CSD23203WT belongs to TI's NexFET™ power MOSFET product line, engineered specifically for ultra-low RDS(on) and gate charge in miniature packages to enable smaller, cooler, and more efficient portable power systems.
FAQ
What is the maximum continuous drain current rating for the CSD23203WT?
The CSD23203WT is rated for –3 A continuous drain current at TA = 25°C with sufficient PCB copper area. Derating applies above 25°C ambient; at 105°C case temperature, the continuous current drops to approximately –1.5 A per absolute maximum ratings table. The CSD23203WT datasheet specifies pulsed drain current up to –54 A for short durations (≤100 μs, ≤1% duty cycle), contingent on thermal management.
Does the CSD23203WT require a gate resistor for stable operation?
The CSD23203WT does not require a gate resistor for basic turn-on/turn-off functionality, but a small series gate resistor (typically 1–10 Ω) is recommended to dampen ringing caused by parasitic inductance in high-speed switching applications. This improves EMI performance and prevents unintended oscillation, especially when driving the CSD23203WT from low-impedance MCU GPIOs or dedicated gate drivers.
Can the CSD23203WT be used in a high-side switch configuration with a 3.3-V microcontroller?
Yes - the CSD23203WT has a VGS(th) of –0.8 V (typical), and its RDS(on) is 22 mΩ at VGS = –2.5 V and 35 mΩ at VGS = –1.8 V. A 3.3-V MCU GPIO can pull the gate to 0 V while the source sits at battery voltage (e.g., 4.2 V), delivering –3.3 V VGS, ensuring full enhancement. No level shifter is needed for standard Li-ion battery systems.
What is the thermal resistance (RθJA) of the CSD23203WT under typical PCB conditions?
The CSD23203WT exhibits RθJA = 170°C/W when mounted on FR4 with minimum copper pad area, and improves to 55°C/W when mounted on 1 in² of 2-oz copper. These values are measured per JEDEC JESD51-2 and JESD51-7 standards. The lower value requires careful land pattern adherence per TI's recommended footprint (M0156-01) to ensure optimal heat spreading through the solder balls.
Is the CSD23203WT pin-compatible with other devices in the CSD2320x family?
Yes - the CSD23203WT shares identical DSBGA-6 (YZC) package dimensions, pinout (C1/C2=Drain, A1=Gate, A2/B1/B2=Source), and land pattern with CSD23203W and CSD23203W.B. All variants use the same wafer-level construction and mechanical interface, enabling drop-in replacement across tape-and-reel formats (250 vs. 3000 units) without PCB redesign.
CSD23203WT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- NexFET™
- Package/Case:
- 6-UFBGA, DSBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 8 V
- Current - Continuous Drain (Id) @ 25°C:
- 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 19.4mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.3 nC @ 4.5 V
- Vgs (Max):
- -6V
- Input Capacitance (Ciss) (Max) @ Vds:
- 914 pF @ 4 V
- FET Feature:
- -
- Power Dissipation (Max):
- 750mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-DSBGA (1x1.5)
CSD23203WT FAQ
1.How can I place an order for CSD23203WT through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD23203WT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD23203WT reliable?
The price and inventory of CSD23203WT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD23203WT is usually 5 days.
3.What payment methods are accepted for CSD23203WT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD23203WT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD23203WT?
CSD23203WT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD23203WT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD23203WT?
For technical support, including CSD23203WT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD23203WT requirements.
6.How does Aetrix verify that CSD23203WT is sourced from the original manufacturer or authorized distributors?
All CSD23203WT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD23203WT meets industry standards.
7.What is the process for return or replacement of CSD23203WT?
All CSD23203WT units undergo pre-shipment inspection (PSI). If there is an issue with CSD23203WT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD23203WT part is unused and in its original packaging.
Return procedure for CSD23203WT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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