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Texas Instruments CSD23280F3T
- Part No.:
- CSD23280F3T
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 3-XFDFN
- Datasheet:
-
CSD23280F3T.pdf
- Description:
- MOSFET P-CH 12V 1.8A 3PICOSTAR
- Quantity:
- Payment:
- Shipping:
Inventory:12,029
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Product details
Overview
CSD23280F3T from Texas Instruments is a –12-V, 97-mΩ P-Channel FemtoFET™ MOSFET in a 0.73 mm × 0.64 mm LGA package with 0.36-mm max height, optimized for ultra-compact load switching in battery-powered handheld devices and mobile electronics.
For engineers reviewing the CSD23280F3T datasheet, CSD23280F3T pinout, CSD23280F3T application, or CSD23280F3T equivalent, key selection criteria include its 2.9-A continuous drain current at 25°C, 0.95-nC total gate charge, integrated >4-kV HBM ESD protection, and compatibility with low-voltage logic-level drive (VGS(th) = –0.65 V typical).
Technical Context
This P-channel enhancement-mode MOSFET uses silicon process technology to achieve femtoscale footprint and ultra-low Qg/Qgd, enabling fast switching with minimal drive power. Its RDS(on) of 97 mΩ at VGS = –4.5 V and 129 mΩ at VGS = –2.5 V supports efficient operation in 1.8-V to 4.5-V control environments.
The device features an integrated source-drain diode with VSD = –0.73 V at –0.4 A and is qualified for –55°C to 150°C junction temperature operation. Thermal resistance is 90°C/W on 1-in² 2-oz Cu PCB, confirming suitability for thermally constrained portable designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | –12 V - Maximum blocking voltage for battery-side high-side switch configurations |
| RDS(on) @ VGS = –4.5 V | 97 mΩ - Enables ≤280 mW conduction loss at 1.7 A, critical for thermal management in sealed enclosures |
| Qg | 0.95 nC - Reduces gate drive power and enables use with weak GPIOs or low-current controllers |
| ID Continuous | 2.9 A @ TA = 25°C - Supports peak load currents in USB-C PD sink paths and PMIC rail switches |
| VGS(th) | –0.65 V typical - Ensures reliable turn-on with 1.2-V or 1.8-V logic outputs without level shifting |
| HBM ESD Rating | >4 kV - Eliminates need for external ESD protection in handheld front-end switches |
| Package Dimensions | 0.73 mm × 0.64 mm × 0.36 mm - Fits within tight board real estate budgets, e.g., <1.5 mm² area per switch |
Pinout & Package
Packaged in a 3-terminal 0.73-mm × 0.64-mm Land Grid Array (LGA) with 0.36-mm maximum profile, the CSD23280F3T uses bottom-side solder pads for thermal and electrical connection. No exposed leads - all terminals are surface-mount lands.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control input; accepts logic-level negative voltage; low Qg enables fast edge rates with minimal ringing |
| Pin 2 | Source | Common reference node; tied to higher potential (e.g., battery +); forms return path for body diode conduction |
| Pin 3 | Drain | Switched output; connects to load; polarity supports high-side load switch topology with ground-referenced control |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small footprint (0.73 mm × 0.64 mm) | Reduces PCB area by >60% vs. comparable SOT-23 or SC-70 P-channel MOSFETs, enabling denser power rail routing |
| Low Qg (0.95 nC) and Qgd (0.068 nC) | Minimizes switching energy loss and dv/dt-induced shoot-through risk in multi-MOSFET power domains |
| Integrated ESD protection (>4-kV HBM) | Removes need for discrete TVS diodes in consumer-grade USB, SIM, or SD card hot-swap circuits |
| 0.36-mm max height | Enables stacking under thin bezels or beneath flex connectors in foldable phones and wearables |
| RoHS-compliant, lead-free LGA | Supports automated reflow assembly without Pb-based solder compatibility concerns or post-process cleaning |
Applications
| Battery Load Switching | USB Type-C Power Path Control |
|---|---|
|
Use Scenario: Isolating backup battery from main system during deep sleep or fault conditions in smartwatches and Bluetooth earbuds. IC Role / Device Role: High-side P-channel load switch controlling power delivery from Li-ion cell to SoC rails. Use Value: 97-mΩ RDS(on) limits dropout to <170 mV at 1.75 A, preserving runtime; 0.36-mm height avoids interference with stacked battery modules. |
Use Scenario: Enabling/disabling VBUS sourcing or sinking in dual-role USB-C ports on portable monitors and docking stations. IC Role / Device Role: Directional power path switch managing reverse current flow and VBUS discharge during role swaps. Use Value: Low Qgd (0.068 nC) suppresses Miller-induced turn-on during fast CC-line transitions; integrated ESD withstands plug/unplug transients. |
| Mobile RF Front-End Bias Control | Low-Power Sensor Node Power Gating |
|
Use Scenario: Sequencing bias voltage to PA modules or antenna tuners in 5G NR handsets where space and thermal headroom are constrained. IC Role / Device Role: Precision-controlled high-side switch delivering clean enable signals to RF ICs with minimal leakage. Use Value: IDSS = –50 nA at –9.6 V ensures <100 nW standby loss; 0.73 mm × 0.64 mm footprint fits between RF matching networks and IC pads. |
Use Scenario: Power-gating environmental sensors (e.g., humidity, UV) in IoT asset trackers to extend 10-year battery life. IC Role / Device Role: Ultra-low-leakage load switch disconnecting sensor supply between measurement cycles. Use Value: VGS(th) = –0.65 V allows direct drive from microcontroller GPIO; 2.9-A rating supports burst-mode actuation without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LFG-7 | RDS(on) = 120 mΩ @ –4.5 V; larger 1.0 mm × 0.6 mm SOT-723 package; no integrated ESD diode | Requires external ESD protection; less suitable for ultra-thin form factors due to 0.5-mm height | Preferred when cost sensitivity outweighs board area constraints and ESD robustness is handled elsewhere |
| Si2301DDS-T1-GE3 | RDS(on) = 115 mΩ @ –4.5 V; SO-3 package (1.7 mm × 2.9 mm); Qg = 2.5 nC - 2.6× higher than CSD23280F3T | Higher gate drive demand limits use with weak MCU outputs; 5.5× larger footprint restricts placement near BGA SoCs | Applicable where legacy SO-3 layout reuse is prioritized over miniaturization and efficiency |
Compared with DMN2020LFG-7 and Si2301DDS-T1-GE3, the CSD23280F3T delivers superior space efficiency, lower switching losses, and built-in ESD robustness - making it optimal for next-generation compact, battery-sensitive designs where gate drive strength and PCB area are tightly coupled.
Availability
CSD23280F3T is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and wearable electronics requiring stable component supply with guaranteed long-term manufacturability.
Supply support for CSD23280F3T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, specializing in analog, embedded processing, and power management technologies since 1930.
The CSD23280F3T belongs to TI's FemtoFET™ MOSFET product line, engineered specifically for ultra-miniaturized load switching in space-constrained portable electronics where traditional packages cannot fit.
FAQ
What is the maximum continuous drain current rating for the CSD23280F3T?
The CSD23280F3T has a maximum continuous drain current (ID) of 2.9 A at TA = 25°C on a 1-in² 2-oz Cu PCB. At elevated ambient temperatures or on minimal copper boards, this drops to 1.8 A due to higher thermal resistance (255°C/W). Derating curves in Figure 5-11 confirm linear reduction above 25°C.
Does the CSD23280F3T require a gate resistor for stable switching?
The CSD23280F3T does not require an external gate resistor for basic on/off operation due to its ultra-low Qg (0.95 nC) and Qgd (0.068 nC), but a small series resistor (5–10 Ω) is recommended to dampen potential ringing caused by PCB trace inductance. TI's evaluation data shows clean edges even with direct GPIO drive.
Can the CSD23280F3T be used in high-side load switch configurations?
Yes - the CSD23280F3T is a P-channel MOSFET explicitly designed for high-side load switching. Its –12-V VDS, –0.65-V VGS(th), and source-connected-to-rail topology allow direct integration into battery-input power paths without level shifters or charge pumps.
What is the thermal resistance (RθJA) of the CSD23280F3T under standard PCB conditions?
The CSD23280F3T has a typical junction-to-ambient thermal resistance (RθJA) of 90°C/W when mounted on a 1-in² (6.45 cm²), 2-oz (0.071-mm) thick copper pad on FR4. On minimal copper layouts, RθJA rises to 255°C/W - a key design consideration for sustained 2-A operation in compact assemblies.
Is the CSD23280F3T compatible with standard reflow soldering profiles?
Yes - the CSD23280F3T is rated MSL Level-1 with unlimited floor life and qualified for peak reflow temperatures up to 260°C. Its PICOSTAR (YJM) LGA package uses NiAu lead finish and is fully compatible with IPC/JEDEC J-STD-020D-compliant lead-free reflow processes.
CSD23280F3T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- FemtoFET™
- Package/Case:
- 3-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 116mOhm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.23 nC @ 4.5 V
- Vgs (Max):
- -6V
- Input Capacitance (Ciss) (Max) @ Vds:
- 234 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-PICOSTAR
CSD23280F3T FAQ
1.How can I place an order for CSD23280F3T through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD23280F3T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD23280F3T reliable?
The price and inventory of CSD23280F3T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD23280F3T is usually 5 days.
3.What payment methods are accepted for CSD23280F3T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD23280F3T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD23280F3T?
CSD23280F3T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD23280F3T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD23280F3T?
For technical support, including CSD23280F3T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD23280F3T requirements.
6.How does Aetrix verify that CSD23280F3T is sourced from the original manufacturer or authorized distributors?
All CSD23280F3T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD23280F3T meets industry standards.
7.What is the process for return or replacement of CSD23280F3T?
All CSD23280F3T units undergo pre-shipment inspection (PSI). If there is an issue with CSD23280F3T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD23280F3T part is unused and in its original packaging.
Return procedure for CSD23280F3T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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