Texas Instruments CSD23382F4T

Overview

CSD23382F4T from Texas Instruments is a 12-V P-channel FemtoFET™ MOSFET in a 0402-size LGA package (1.0 mm × 0.6 mm, 0.36-mm max height), optimized for ultra-compact load switching in space-constrained mobile and battery-powered systems. It delivers R_DS(on) = 66 mΩ at V_GS = –4.5 V, Q_g = 1.04 nC, and integrated >2-kV HBM/CDM ESD protection.

For engineers reviewing the CSD23382F4T datasheet, CSD23382F4T pinout, CSD23382F4T application, or CSD23382F4T equivalent, key selection criteria include footprint reduction vs. standard SOT-23/SC-70 MOSFETs, low gate charge for fast switching in portable power rails, thermal performance on minimal PCB copper, and compatibility with 1.8-V–4.5-V logic-level gate drive in battery discharge paths.

Technical Context

This P-channel enhancement-mode MOSFET uses TI's FemtoFET™ silicon process to achieve sub-1-mm² footprint while maintaining robust 12-V drain-source rating and –3.5-A continuous drain current. Its low Q_gd/Q_g ratio (0.15 nC / 1.04 nC) supports clean turn-off with minimal Miller-induced shoot-through risk in high-side switch configurations.

The device integrates an intrinsic body diode with V_SD = –0.75 V at –0.5 A and exhibits R_DS(on) temperature coefficient of <1.4× increase from –55°C to 125°C at V_GS = –4.5 V, enabling stable operation across industrial ambient ranges without derating beyond datasheet limits.

Key Specifications

Pinout & Package

Packaged in PICOSTAR (YJC) 3-terminal Land Grid Array (LGA) - 0402 footprint (1.0 mm × 0.6 mm), 0.36-mm maximum height, RoHS-compliant NiAu (NIAU) terminal plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with DMN2020LFG-7 and AO3415, the CSD23382F4T provides the smallest PCB footprint and built-in ESD protection-critical for miniaturized consumer devices-while trading off slightly higher R_DS(on) than AO3415 and lower voltage rating than both alternatives.

Availability

CSD23382F4T is available at Aetrix Electronics and suitable for battery management, USB-C power delivery, and wearable display power sequencing requiring stable component supply and long-term lifecycle continuity.

Supply support for CSD23382F4T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with over 90 years of innovation in high-reliability components.

The CSD23382F4T belongs to TI's FemtoFET™ MOSFET product line, engineered specifically to replace traditional small-signal packages with ultra-miniature LGA solutions for portable, battery-powered, and space-constrained electronic systems.

FAQ

What is the maximum continuous drain current for CSD23382F4T at 25°C ambient?

The CSD23382F4T supports –3.5 A continuous drain current (I_D) at T_A = 25°C with typical R_θJA = 85°C/W on a 1-inch² 2-oz copper pad. At elevated temperatures or reduced copper area, derating applies per Figure 5-11; for example, at 70°C ambient, max I_D drops to ~2.2 A under same PCB conditions. The CSD23382F4T datasheet specifies this limit in Absolute Maximum Ratings Table.

Does CSD23382F4T require an external gate resistor for stability?

No external gate resistor is required for basic on/off switching of the CSD23382F4T due to its low Q_g (1.04 nC) and Q_gd (0.15 nC), which minimize ringing and oscillation risk. However, a 10–100 Ω series resistor is recommended when driving from high-impedance sources (e.g., weak GPIO) to dampen potential LC resonance with PCB trace inductance. The CSD23382F4T's internal gate resistance (R_G = 350 Ω) further aids stability.

Can CSD23382F4T be used in bidirectional current applications?

The CSD23382F4T is not designed for bidirectional current flow. As a P-channel enhancement-mode MOSFET, it conducts only from source to drain when V_GS < V_GS(th); its body diode allows forward current from source to drain but blocks reverse current. For true bidirectional switching, two back-to-back CSD23382F4T devices or a dedicated bidirectional switch IC would be required. The CSD23382F4T datasheet confirms unidirectional operation in Section 5.1 Diode Characteristics.

What is the reflow profile compatibility for CSD23382F4T?

The CSD23382F4T carries JEDEC MSL Level-1 rating with peak reflow temperature of 260°C, compatible with standard lead-free (SnAgCu) solder profiles. Its NiAu (NIAU) terminal finish ensures robust wetting and intermetallic formation. Reflow must follow TI's recommended time-above-liquidus (TAL) limits: ≤60 seconds at ≥217°C, with ramp rates ≤3°C/s pre- and post-peak. The CSD23382F4T packaging data sheet (Addendum Page 1) validates this profile for PICOSTAR (YJC) LGA construction.

How does the CSD23382F4T's R_DS(on) vary with temperature?

The CSD23382F4T's R_DS(on) increases with junction temperature: at V_GS = –4.5 V, it rises from 66 mΩ at 25°C to ~110 mΩ at 125°C (Figure 5-8 shows ~1.4× normalized increase). This positive temperature coefficient provides inherent current-sharing stability in parallel configurations. Designers should use the 76-mΩ max value at 25°C (from Electrical Characteristics table) for worst-case conduction loss calculations. The CSD23382F4T thermal metrics confirm R_θJA = 85°C/W on standard FR4, enabling accurate T_J estimation.