Texas Instruments CSD25202W15

Overview

CSD25202W15 from Texas Instruments is a 20-V P-channel NexFET™ power MOSFET in a 1.5 mm × 1.5 mm DSBGA package, delivering 21 mΩ R_DS(on) at V_GS = –4.5 V, 5.8 nC total gate charge, and –4 A continuous drain current. It serves as a low-profile, high-efficiency load switch in space-constrained battery protection circuits.

For engineers reviewing the CSD25202W15 datasheet, CSD25202W15 pinout, CSD25202W15 application, or CSD25202W15 equivalent, key selection criteria include its ultra-low on-resistance at low gate drive, thermal performance under 140°C/W mounting conditions, ESD-robust gate (3 kV HBM), and compatibility with compact 1.5-mm footprint PCB layouts for portable electronics.

Technical Context

This P-channel MOSFET uses a silicon-based trench-gate structure optimized for low R_DS(on) and fast switching in battery-side load switching. Its gate-source voltage clamp limits V_GS to ±6 V, and integrated ESD protection enables direct handling without external transient suppression.

The device exhibits strong temperature stability: R_DS(on) increases only ~1.3× from 25°C to 125°C at V_GS = –4.5 V, and threshold voltage shifts predictably from –0.45 V to –1.05 V across –55°C to 150°C junction range - enabling robust overtemperature behavior in battery management ICs.

Key Specifications

Pinout & Package

Package: DSBGA-9 (YZF), 1.5 mm × 1.5 mm wafer-level chip-scale package with 0.31-mm solder balls and 0.5-mm pitch. Seating plane height ≤0.62 mm supports ultra-low profile stacking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with DMG2302UK-7 and Si2301DDS-T1-GE3, the CSD25202W15 delivers 2.3× lower conduction loss and 40% smaller footprint than the former, while offering 5.5× lower R_DS(on) and verified gate drive compatibility absent in the latter - making it the sole option meeting both thermal and spatial requirements for next-gen wearables.

Availability

CSD25202W15 is available at Aetrix Electronics and suitable for battery protection, USB-C power path control, and medical patch sensor power switching requiring stable component supply across production lifecycles.

Supply support for CSD25202W15 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a U.S.-based semiconductor company specializing in analog, embedded processing, and power management solutions with global manufacturing and quality certification.

The CSD25202W15 belongs to TI's NexFET™ power MOSFET product line, engineered specifically for ultra-compact, high-efficiency load switching in portable and battery-powered systems where thermal density and PCB area are primary constraints.

FAQ

What is the maximum continuous drain current rating for the CSD25202W15 at 125°C ambient?

The CSD25202W15 supports –4 A continuous drain current at T_A = 25°C. At 125°C ambient, derating applies: with typical R_θJA = 140°C/W on 1-inch² Cu, maximum continuous I_D drops to approximately –1.8 A to maintain T_J ≤ 150°C. The CSD25202W15 datasheet specifies absolute maximum I_D remains –4 A regardless of temperature, but practical design must observe thermal limits. Always verify layout-specific thermal resistance before finalizing the CSD25202W15 design.

Does the CSD25202W15 require an external gate resistor for safe switching?

The CSD25202W15 includes an internal gate clamp resistor, and its gate charge (5.8 nC) and gate resistance (31 Ω) are characterized with external R_G = 2 Ω in timing tests. While not mandatory, a 0–10 Ω external gate resistor is recommended to dampen ringing and control dV/dt during fast transitions. The CSD25202W15's low Q_gd/Q_gs ratio (0.8/1.1) inherently suppresses Miller-induced turn-on, reducing risk of shoot-through in half-bridge configurations - but external R_G remains best practice for production robustness.

Can the CSD25202W15 be used in a synchronous rectifier configuration?

No - the CSD25202W15 is a P-channel enhancement-mode MOSFET optimized for high-side load switching, not synchronous rectification. Its body diode forward voltage (–0.75 V) and reverse recovery characteristics (Q_rr = 19 nC, t_rr = 26 ns) are not specified for bidirectional conduction or high-frequency freewheeling. Synchronous rectifier applications require N-channel devices with optimized diode softness and low Q_rr; the CSD25202W15 lacks those features and is not validated for that topology.

What is the moisture sensitivity level (MSL) and peak reflow temperature for the CSD25202W15?

The CSD25202W15 carries MSL Level-1 with unlimited floor life and a peak reflow temperature of 260°C for both IR and convection processes. It is Pb-free and RoHS-compliant, using SnAgCu (SAC305) ball metallurgy. The device is qualified per JEDEC J-STD-020 and supports standard lead-free reflow profiles without baking - confirmed in TI's packaging addendum for CSD25202W15 and CSD25202W15T variants. Always refer to the latest TI documentation for CSD25202W15 reflow guidance.

How does the CSD25202W15's R_DS(on) change with temperature and gate voltage?

The CSD25202W15's R_DS(on) increases with junction temperature: at V_GS = –4.5 V, it rises from 21 mΩ at 25°C to ~27 mΩ at 125°C - a +29% shift. At lower gate drives, variation is more pronounced: R_DS(on) = 40 mΩ at V_GS = –1.8 V and 25°C, but climbs to 52 mΩ at 125°C (+30%). This predictable positive TC allows stable current limiting in battery protection ICs. All values are measured per the CSD25202W15 datasheet Section 5.1 and Figure 7.