Texas Instruments CSD25202W15T

Overview

CSD25202W15T from Texas Instruments is a 20-V P-channel NexFET™ power MOSFET in a 1.5 mm × 1.5 mm DSBGA package, delivering 21 mΩ R_DS(on) at V_GS = −4.5 V, 5.8 nC total gate charge, and −4 A continuous drain current. It serves as a low-profile load switch or battery protection switch in space-constrained portable electronics.

For engineers reviewing the CSD25202W15T datasheet, CSD25202W15T pinout, CSD25202W15T application, or CSD25202W15T equivalent, key selection criteria include ultra-low on-resistance in chip-scale packaging, gate ESD rating of ±3 kV, thermal resistance as low as 140°C/W with adequate copper, and verified diode forward voltage of −0.75 V at −2 A.

Technical Context

This P-channel MOSFET employs a trench-gate silicon process optimized for low R_DS(on) and fast switching in battery-side high-side switching configurations. Its gate threshold voltage (−0.75 V typ) enables direct control from 1.8-V or 2.5-V logic without level shifting.

The device integrates an internal gate-source clamp resistor and exhibits robust dynamic characteristics: 0.8 nC Q_gd, 1.1 nC Q_gs, and 21–27 pF C_rss at V_DS = −10 V - supporting efficient synchronous rectification and fast turn-off in compact DC-DC converters.

Key Specifications

Pinout & Package

Package: Texas Instruments DSBGA-9 (YZF) wafer-level chip-scale package, 1.5 mm × 1.5 mm footprint, 0.4-mm ball pitch, solder balls on bottom surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with DMG2302UK-7 and Si2301DDS-T1-GE3, the CSD25202W15T delivers 2.3× lower R_DS(on) at logic-level gate drive, 40% smaller footprint, and integrated gate protection - making it optimal for high-efficiency, miniaturized battery systems where thermal headroom and board area are constrained.

Availability

CSD25202W15T is available at Aetrix Electronics and suitable for smartphone battery protection, wireless earbud charging cases, and USB-C power delivery sink designs requiring stable component supply, consistent wafer-lot traceability, and long-term industrial lifecycle support.

Supply support for CSD25202W15T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, specializing in analog, embedded processing, and power management technologies since 1930.

The CSD25202W15T belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-density, low-voltage battery-powered systems demanding minimal PCB area and superior thermal efficiency.

FAQ

What is the maximum continuous drain current rating for the CSD25202W15T at 125°C case temperature?

The CSD25202W15T supports −2.5 A continuous drain current at T_C = 125°C, derived from its thermal derating curve and 0.5 W power dissipation limit. This value is confirmed in the Absolute Maximum Ratings table and validated by transient thermal impedance data in Figure 1 of the SLPS508A datasheet. The CSD25202W15T maintains safe operation under sustained load in thermally dense portable enclosures.

Does the CSD25202W15T require an external gate resistor for ESD protection?

No, the CSD25202W15T integrates an internal gate-source clamp resistor and is rated for ±3 kV HBM ESD protection per JEDEC JS-001. External gate resistors are unnecessary for ESD robustness but may be added for slew-rate control in high-di/dt switching applications. The CSD25202W15T's built-in clamp eliminates the need for discrete TVS components in most consumer battery management circuits.

Can the CSD25202W15T be used in a high-side switch configuration with 1.8-V GPIO control?

Yes, the CSD25202W15T has a typical V_GS(th) of −0.75 V and guarantees turn-on at V_GS ≤ −1.05 V, making it fully compatible with 1.8-V logic outputs. At V_GS = −1.8 V, R_DS(on) is 40 mΩ - sufficient for ≤1-A loads in space-constrained applications. The CSD25202W15T thus enables true single-supply high-side switching without level shifters.

What is the recommended land pattern for the CSD25202W15T DSBGA-9 package?

Texas Instruments specifies a 0.31-mm diameter solder pad with 0.50-mm center-to-center pitch and 0.40-mm solder mask opening in the SLPS508A datasheet (Section 7.2). The land pattern must accommodate all nine solder balls in a 3×3 array, with thermal relief on source/drain pads to prevent tombstoning. The CSD25202W15T requires precise stencil aperture design due to its 0.4-mm ball pitch and wafer-level construction.

Is the CSD25202W15T suitable for reverse polarity protection in 5-V USB-powered devices?

Yes, the CSD25202W15T's −20 V V_DS rating and 21 mΩ R_DS(on) at −4.5 V make it ideal for reverse polarity protection in 5-V systems. With <105 mV dropout at 5 A, it minimizes voltage loss while providing robust fault isolation. The CSD25202W15T's low gate charge also ensures fast turn-on during hot-plug events, protecting downstream circuitry from reverse voltage transients.