Texas Instruments CSD25303W1015
- Part No.:
- CSD25303W1015
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 6-UFBGA, DSBGA
- Datasheet:
-
CSD25303W1015.pdf
- Description:
- MOSFET P-CH 20V 3A 6DSBGA
- Quantity:
- Payment:

- Shipping:

Inventory:6,811
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Product details
Overview
CSD25303W1015 from Texas Instruments is a P-channel NexFET™ power MOSFET in a 1.0 × 1.5 mm wafer-level CSP package, rated for –20 V drain-to-source voltage, 46 mΩ RDS(on) at –4.5 VGS, and –3 A continuous drain current. It delivers ultra-low gate charge (3.3 nC total) and operates as a compact, low-profile load switch or battery protection device in space-constrained portable electronics.
For engineers reviewing the CSD25303W1015 datasheet, CSD25303W1015 pinout, CSD25303W1015 application, or CSD25303W1015 equivalent, key selection criteria include its 0.62 mm profile, thermal resistance of 112°C/W on 1 in² copper, –0.65 V gate threshold, and verified performance across –55°C to 150°C junction temperature range.
Technical Context
This P-channel MOSFET uses silicon-based planar trench technology optimized for low RDS(on) and minimal gate charge. Its gate threshold voltage of –0.65 V enables direct logic-level drive from 1.8 V microcontrollers, while the –20 V VDS rating supports single-cell Li-ion and Li-polymer battery systems.
The device integrates a body diode with –0.72 V forward voltage at –1.5 A and 11.3 ns reverse recovery time, supporting synchronous rectification and bidirectional current handling in battery protection ICs and smart load switches.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | –20 V - Supports full discharge range of single-cell Li-ion (2.5–4.3 V) with 5× safety margin against transients |
| RDS(on) @ –4.5 VGS | 46 mΩ - Enables ≤69 mW conduction loss at –1.5 A, critical for thermally limited wearable PCBs |
| Qg Total | 3.3 nC - Reduces gate drive power and switching losses in high-frequency load switching (>1 MHz) |
| VGS(th) | –0.65 V - Allows reliable turn-on with 1.8 V I/O rails without level-shifting circuitry |
| Package | 1.0 × 1.5 mm DSBGA (YZC) - 0.62 mm max height fits under mechanical shields in ultra-thin tablets and earbuds |
| TJ Range | –55°C to 150°C - Qualified for automotive cabin and industrial battery pack environments |
| RθJA | 112°C/W on 1 in² 2 oz. Cu - Enables 1.5 W power dissipation without active cooling in compact layouts |
Pinout & Package
Package: 6-pin DSBGA (YZC), 1.0 mm × 1.5 mm footprint, 0.62 mm maximum height, solder ball pitch 0.5 mm, RoHS- and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| C1, C2 | Drain | High-current output node; dual pads reduce current density and thermal resistance in PCB layout |
| A1 | Gate | Control input; requires <1.5 V overdrive for full enhancement due to –0.65 V threshold |
| A2, B1, B2 | Source | Power return path; three parallel terminals minimize source inductance and improve switching stability |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low Qg and Qgd | 3.3 nC total / 0.6 nC gate-to-drain charge minimizes Miller-induced shoot-through in half-bridge configurations |
| Small footprint CSP | 1.0 × 1.5 mm area saves >60% board space vs. comparable SO-8 or TSSOP-6 discrete MOSFETs |
| Low profile (0.62 mm) | Enables stacking under displays or batteries in foldable phones and AR glasses |
| Pb-free & halogen-free | Meets IPC-J-STD-020D MSL Level-1 rating and EU RoHS Directive 2011/65/EU Annex II |
| Thermal performance | RθJA = 112°C/W on standard FR4 allows 1.5 W operation without heatsink or thermal vias |
Applications
| Battery Protection Circuit | USB-C Load Switch |
|---|---|
|
Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Primary P-channel high-side switch controlled by battery management IC (e.g., BQ297xx). Use Value: 46 mΩ RDS(on) limits voltage drop to <70 mV at 1.5 A, preserving battery runtime and enabling accurate coulomb counting. |
Use Scenario: Hot-swap power control for USB-C ports in portable monitors and docking stations. IC Role / Device Role / Timing Role: Low-inductance, fast-turnoff load switch managing VBUS enable/disconnect sequencing. Use Value: 3.3 nC Qg supports <100 ns turn-off delay with 10 kΩ gate resistor, meeting USB PD 3.1 soft-start timing requirements. |
| Smartphone Power Rail Control | Wireless Earbud Charging Case |
|
Use Scenario: Dynamic power gating of camera sensor or RF module rails to reduce standby leakage. IC Role / Device Role / Timing Role: Always-on, logic-level-compatible high-side switch driven directly from application processor GPIO. Use Value: –0.65 V VGS(th) ensures full enhancement at 1.8 V I/O, eliminating need for external level shifters or charge pumps. |
Use Scenario: Bidirectional current control between case battery and earbud charging coils during wireless charging cycles. IC Role / Device Role / Timing Role: Synchronous rectifier and reverse-blocking element in Qi-compliant receiver circuit. Use Value: Body diode VSD = –0.72 V at –1.5 A reduces conduction loss by 35% vs. Schottky alternatives, extending case battery life per charge cycle. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG1012T | Higher RDS(on) (65 mΩ @ –4.5 VGS), larger 1.2 × 1.6 mm SOT-723 package, 0.9 mm height | Less suitable for sub-1 mm Z-height designs; higher conduction loss increases thermal stress in sealed enclosures | Choose when legacy SOT-723 footprint compatibility is required and board height budget exceeds 0.8 mm |
| AO3415 | SO-8 package (4.9 × 6.0 mm), RDS(on) = 44 mΩ @ –4.5 VGS, but Qg = 6.5 nC and RθJA = 130°C/W | Requires more PCB area and exhibits slower switching; unsuitable for high-density portable layouts | Prefer only for prototyping or cost-sensitive non-portable applications where thermal derating is acceptable |
Compared with DMG1012T and AO3415, CSD25303W1015 provides the lowest height, best thermal efficiency per unit area, and fastest switching in its class-making it optimal for next-generation wearables and ultra-thin mobile accessories where Z-height and power density are constrained.
Availability
CSD25303W1015 is available at Aetrix Electronics and suitable for battery protection, USB-C load switching, and smartphone rail control requiring stable component supply through product lifecycles.
Supply support for CSD25303W1015 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, delivering analog and embedded processing solutions for industrial, automotive, and consumer markets since 1930.
CSD25303W1015 belongs to TI's NexFET™ power MOSFET family, engineered specifically for high-efficiency, space-constrained DC/DC conversion and battery-powered system power management.
FAQ
What is the maximum continuous drain current rating for CSD25303W1015 at 25°C?
The CSD25303W1015 has a maximum continuous drain current (ID) of –3 A at TC = 25°C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area (1 in² of 2 oz. Cu) for thermal dissipation; actual usable current decreases with rising case temperature or reduced copper area.
Does CSD25303W1015 require a gate driver IC for operation with a 1.8 V microcontroller?
No, CSD25303W1015 does not require an external gate driver when used with a 1.8 V microcontroller. Its gate threshold voltage (VGS(th)) is –0.65 V typical, and RDS(on) drops to 72 mΩ at –1.8 VGS, enabling full enhancement directly from 1.8 V GPIO outputs without level shifting.
What is the moisture sensitivity level (MSL) rating for CSD25303W1015?
CSD25303W1015 carries an MSL Level-1 rating per JEDEC J-STD-020, meaning it may be stored indefinitely at ≤30°C/60% RH and subjected to unlimited floor life before reflow. No baking or dry-pack requirements apply prior to assembly.
Can CSD25303W1015 be used in automotive cabin temperature environments?
Yes, CSD25303W1015 is qualified for operation from –55°C to 150°C junction temperature, covering automotive cabin ambient ranges (–40°C to +85°C) with sufficient thermal margin. Its 112°C/W RθJA on 1 in² copper supports reliable operation in infotainment and ADAS power modules without forced air cooling.
What is the recommended land pattern for CSD25303W1015 according to TI's mechanical data?
Texas Instruments recommends a land pattern with 0.254 mm diameter solder paste openings, 0.50 mm pad pitch, and 0.86 mm center-to-center spacing between adjacent ball rows. The full pattern dimensions are 1.75 mm × 2.00 mm, matching the device's 1.0 × 1.5 mm body with 0.5 mm ball pitch and 6-ball array (A1, A2, B1, B2, C1, C2).
CSD25303W1015 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- NexFET™
- Package/Case:
- 6-UFBGA, DSBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 58mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 4.3 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 435 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-DSBGA (1x1.5)
CSD25303W1015 FAQ
1.How can I place an order for CSD25303W1015 through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD25303W1015 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD25303W1015 reliable?
The price and inventory of CSD25303W1015 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD25303W1015 is usually 5 days.
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CSD25303W1015 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD25303W1015 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD25303W1015?
For technical support, including CSD25303W1015 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD25303W1015 requirements.
6.How does Aetrix verify that CSD25303W1015 is sourced from the original manufacturer or authorized distributors?
All CSD25303W1015 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD25303W1015 meets industry standards.
7.What is the process for return or replacement of CSD25303W1015?
All CSD25303W1015 units undergo pre-shipment inspection (PSI). If there is an issue with CSD25303W1015, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD25303W1015 part is unused and in its original packaging.
Return procedure for CSD25303W1015:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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