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Texas Instruments CSD25304W1015
- Part No.:
- CSD25304W1015
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 6-UFBGA, DSBGA
- Datasheet:
-
CSD25304W1015.pdf
- Description:
- MOSFET P-CH 20V 3A 6DSBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,757
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Product details
Overview
CSD25304W1015 from Texas Instruments is a –20 V, 27 mΩ P-Channel NexFET™ Power MOSFET in a 1.0 mm × 1.5 mm wafer-level DSBGA package, rated for –3.0 A continuous drain current at 25°C and featuring ultra-low 3.3 nC total gate charge and 0.5 nC gate-to-drain charge-optimized for high-efficiency battery protection and load switching in space-constrained portable electronics.
For engineers reviewing the CSD25304W1015 datasheet, CSD25304W1015 pinout, CSD25304W1015 application, or CSD25304W1015 equivalent, key selection criteria include its –0.8 V gate threshold voltage, 165°C/W junction-to-ambient thermal resistance on minimal PCB copper, and compatibility with low-voltage logic-level drive (–1.8 V to –4.5 V) in compact battery management systems.
Technical Context
This device employs a silicon-based P-Channel trench MOSFET structure optimized for low RDS(on) and fast switching in bidirectional blocking configurations. Its gate charge profile (Qg = 3.3 nC, Qgd = 0.5 nC) enables efficient operation at high frequencies up to 1 MHz in synchronous buck or reverse-polarity protection circuits.
The CSD25304W1015 integrates an intrinsic body diode with VSD = –0.75 V at –1.5 A and Qrr = 7.2 nC, supporting controlled reverse recovery in load-switching transients. Thermal performance is defined for two mounting conditions: 165°C/W on minimum Cu and 85°C/W on 1-inch² 2-oz Cu.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | –20 V maximum drain-to-source voltage - supports full operation across Li-ion battery stacks up to 3S (–12.6 V) with margin. |
| RDS(on) @ VGS = –4.5 V | 27 mΩ typical - delivers <100 mW conduction loss at –1.5 A, critical for thermally limited wearable PCBs. |
| Qg | 3.3 nC total gate charge - reduces driver power demand and enables <30 ns total switching time with 20 Ω gate resistor. |
| VGS(th) | –0.8 V typical threshold - ensures reliable turn-on with standard I²C or GPIO logic outputs down to –1.8 V. |
| PD | 0.75 W maximum power dissipation - validated for FR4 boards with minimal copper, enabling use without thermal vias. |
| ID (continuous) | –3.0 A at TA = 25°C - sufficient for USB-C PD load switches and smart battery fuel gauges. |
| Package | DSBGA (YZC), 1.0 mm × 1.5 mm, 0.62 mm height - fits under 1.2 mm stacked modules and matches 0402 footprint area. |
Pinout & Package
Package: DSBGA (YZC), 6-terminal wafer-level chip-scale package, 1.0 mm × 1.5 mm outline, 0.62 mm profile, solder-ball mounted.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| C1, C2 | Drain | High-current output node; electrically tied internally; requires thermal pad connection to ground plane for heat dissipation. |
| A1 | Gate | Control input; sensitive to ESD; must be driven with low-impedance source to minimize switching losses. |
| A2, B1, B2 | Source | Power return path; multiple terminals reduce bond-wire inductance and improve current sharing in pulsed operation. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low Qg and Qgd | 3.3 nC total / 0.5 nC gate-to-drain charge minimizes Miller-induced shoot-through risk in half-bridge configurations. |
| Small footprint | 1.0 mm × 1.5 mm DSBGA occupies <1.5 mm² board area - 40% smaller than comparable SO-8 or SOT-23 MOSFETs. |
| Low-profile package | 0.62 mm max height enables integration beneath displays, batteries, or stacked FPC connectors in ultra-thin devices. |
| Pb-free & RoHS-compliant | SnAgCu (SNAGCU) ball finish meets IPC-J-STD-020 Level-1 reflow requirements up to 260°C peak. |
| Wafer-level CSP | Direct die attach eliminates leadframe parasitics - improves high-frequency gate drive fidelity and thermal response. |
Applications
| Battery Protection IC Interface | USB-C Port Power Switching |
|---|---|
|
Use Scenario: Reverse-polarity and overcurrent protection in single-cell Li-ion battery packs using integrated protection ICs like BQ297xx. IC Role / Device Role: High-side P-Channel switch controlled by protection IC's DRV pin to disconnect cell during fault conditions. Use Value: 27 mΩ RDS(on) limits voltage drop to <41 mV at 1.5 A, preserving battery cutoff accuracy and minimizing self-heating. |
Use Scenario: VBUS enable/disable switching in USB-C receptacles supporting 3 A @ 5 V or 1.5 A @ 20 V. IC Role / Device Role: Load switch isolating downstream port circuitry from upstream power source during hot-plug or fault events. Use Value: 3.3 nC Qg allows clean 100 µs turn-on/turn-off transitions with standard GPIO drivers, meeting USB-C specification timing. |
| Smartwatch Power Rail Management | Wireless Earbud Charging Case Switch |
|
Use Scenario: Dynamic rail enable for display backlight, sensor hub, or BLE radio in sub-10 mm thick wearables. IC Role / Device Role: Low-quiescent-load P-Channel switch placed between battery and subsystem LDO input. Use Value: 0.62 mm height clears tight Z-space between battery and PCB; –0.8 V VGS(th) ensures full enhancement with 1.8 V MCU I/O. |
Use Scenario: Isolating charging circuitry from earbud battery during case-to-earbud power transfer. IC Role / Device Role: Bidirectional blocking switch preventing backfeed from earbud battery into case charger IC. Use Value: Intrinsic body diode with 7.2 nC Qrr suppresses voltage spikes during fast load removal, eliminating need for external Schottky clamp. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-Channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2011UFG-7 | 20 V, 32 mΩ @ –4.5 V, SOT-23-3 package (2.9 mm × 1.3 mm, 1.1 mm height), Qg = 4.2 nC | Larger footprint and height limit use in <1.2 mm Z-space designs; higher RDS(on) increases conduction loss by ~18% at 1.5 A. | Preferred where manual rework or legacy SMT lines favor leaded packages and thermal relief via stitching is feasible. |
| Si2301DDS-T1-GE3 | –20 V, 115 mΩ @ –4.5 V, SOT-23 package, Qg = 2.4 nC, VGS(th) = –0.7 V | Higher on-resistance demands larger gate drive to achieve same current; lower Qg benefits ultra-low-power wake-up paths. | Selected when cost sensitivity outweighs efficiency needs and peak current remains below 0.8 A. |
Compared with DMN2011UFG-7 and Si2301DDS-T1-GE3, the CSD25304W1015 delivers the lowest RDS(on) in the smallest volume, making it optimal for next-generation compact battery-powered devices where thermal headroom and board area are constrained.
Availability
CSD25304W1015 is available at Aetrix Electronics and suitable for battery protection, USB-C load switching, and wearable power rail management requiring stable component supply and long-term production continuity.
Supply support for CSD25304W1015 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management technologies, with over 50 years of innovation in high-reliability analog components.
The CSD25304W1015 belongs to TI's NexFET™ Power MOSFET product line, engineered specifically for ultra-compact, high-efficiency power switching in portable and battery-operated systems where size, thermal performance, and low-voltage drive capability are critical.
FAQ
What is the maximum continuous drain current rating for the CSD25304W1015 at 105°C ambient?
The CSD25304W1015 is rated for –3.0 A continuous drain current at TA = 25°C. At 105°C ambient, derating applies per its thermal resistance: with RθJA = 165°C/W, maximum power dissipation drops to ~0.45 W, limiting practical ID to approximately –1.3 A for sustained operation without forced cooling. The CSD25304W1015 datasheet specifies this derating explicitly in Section 5.2.
Does the CSD25304W1015 require a gate resistor for stable switching in battery protection circuits?
Yes, a gate resistor is recommended for the CSD25304W1015 to control dV/dt and prevent oscillation during turn-on/turn-off. With Qg = 3.3 nC and typical driver impedance, a 10–22 Ω resistor limits peak gate current while maintaining <30 ns switching times. The CSD25304W1015 evaluation data in Figure 4 confirms stable gate charge behavior with 20 Ω series resistance.
Can the CSD25304W1015 be used in a high-side load switch configuration with 1.8 V logic control?
Yes, the CSD25304W1015 supports high-side switching with 1.8 V logic control due to its –0.8 V typical VGS(th) and 65 mΩ RDS(on) at VGS = –1.8 V. This enables full enhancement from standard I²C or GPIO outputs without level-shifting. The CSD25304W1015 datasheet Table 5.1 confirms operational parameters at –1.8 V gate drive.
What is the moisture sensitivity level (MSL) rating for the CSD25304W1015?
The CSD25304W1015 has an MSL rating of Level-1 per JEDEC J-STD-020, with unlimited floor life at ≤30°C/60% RH and peak reflow temperature of 260°C. This allows standard SMT assembly without baking, confirmed in TI's Package Option Addendum for orderable part CSD25304W1015.
How does the CSD25304W1015's thermal performance compare between minimal and enhanced PCB copper layouts?
The CSD25304W1015 exhibits RθJA = 165°C/W on FR4 with minimum copper and 85°C/W on 1-inch² 2-oz Cu - a 48% improvement. This means at –1.5 A, junction temperature rise drops from 124°C to 64°C, directly extending reliability and enabling higher current bursts. The CSD25304W1015 datasheet Figure 10 illustrates safe operating area shifts with thermal layout.
CSD25304W1015 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- NexFET™
- Package/Case:
- 6-UFBGA, DSBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 32.5mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.15V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 4.4 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 595 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 750mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-DSBGA (1x1.5)
CSD25304W1015 FAQ
1.How can I place an order for CSD25304W1015 through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD25304W1015 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD25304W1015 reliable?
The price and inventory of CSD25304W1015 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD25304W1015 is usually 5 days.
3.What payment methods are accepted for CSD25304W1015?
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4.How is shipping managed for CSD25304W1015?
CSD25304W1015 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD25304W1015 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD25304W1015?
For technical support, including CSD25304W1015 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD25304W1015 requirements.
6.How does Aetrix verify that CSD25304W1015 is sourced from the original manufacturer or authorized distributors?
All CSD25304W1015 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD25304W1015 meets industry standards.
7.What is the process for return or replacement of CSD25304W1015?
All CSD25304W1015 units undergo pre-shipment inspection (PSI). If there is an issue with CSD25304W1015, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD25304W1015 part is unused and in its original packaging.
Return procedure for CSD25304W1015:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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