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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Texas Instruments CSD25304W1015T

Name: CSD25304W1015T
Brand: Texas Instruments
SKU: CSD25304W1015T
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CSD25304W1015T

Manufacturer:: Texas Instruments

Category:: FETs, MOSFETs

Package:: 6-UFBGA, DSBGA

Datasheet:: CSD25304W1015T.pdf

Description:: MOSFET P-CH 20V 3A 6DSBGA

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Product details

Overview

CSD25304W1015T from Texas Instruments is a –20 V, 27 mΩ P-Channel NexFET™ Power MOSFET in a 1.0 mm × 1.5 mm wafer-level DSBGA package, rated for –3.0 A continuous drain current at 25°C and optimized for ultra-low gate charge (3.3 nC) and compact battery protection and load switch applications.

For engineers reviewing the CSD25304W1015T datasheet, CSD25304W1015T pinout, CSD25304W1015T application, or CSD25304W1015T equivalent, this device delivers verified thermal performance (R_θJA = 165°C/W on minimal Cu), low-profile mounting (0.62 mm height), and precise threshold control (V_GS(th) = –0.8 V) in space-constrained portable electronics designs.

Technical Context

This P-channel MOSFET employs a silicon-based trench-gate structure to achieve low R_DS(on) (27 mΩ @ V_GS = –4.5 V, I_D = –1.5 A) and fast switching with t_r = 4 ns and t_f = 10 ns under standard test conditions (V_DS = –10 V, R_G = 20 Ω). Its ultra-low Q_gd (0.5 nC) minimizes Miller effect during turn-off transitions.

The device integrates an intrinsic body diode with V_SD = –0.75 V (I_S = –1.5 A, T_C = 25°C) and reverse recovery time t_rr = 11.6 ns, supporting synchronous rectification and bidirectional current handling in compact power rails.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	–20 V - Maximum blocking voltage for battery-side high-side switching in 3.3 V/5 V systems
R_DS(on) @ V_GS = –4.5 V	27 mΩ - Enables <100 mW conduction loss at –1.5 A, critical for thermally constrained PCBs
Q_g	3.3 nC - Reduces gate drive power and enables efficient operation with low-current controllers
V_GS(th)	–0.8 V - Ensures reliable turn-on with standard logic-level P-ch drivers (e.g., 1.8 V GPIO)
P_D	0.75 W - Specifies maximum steady-state dissipation on FR4 with minimum copper area
Package	DSBGA (YZC), 1.0 mm × 1.5 mm - Wafer-level chip-scale package enabling <1.5 mm² board footprint
T_J Range	–55°C to 150°C - Supports operation across industrial and automotive ambient environments

Pinout & Package

Package: DSBGA (YZC), 6-terminal wafer-level chip-scale package, 1.0 mm × 1.5 mm outline, 0.62 mm profile height, solder-ball termination.

Pin/Terminal	Circuit Role	Design Meaning
C1, C2	Drain	Primary high-side current path; electrically tied to top-side metal layer; requires thermal pad connection
A1	Gate	Control terminal; accepts negative V_GS for turn-on; sensitive to ESD (max ±8 V rating)
A2, B1, B2	Source	Reference node for gate drive and load return; multiple terminals reduce source inductance and improve current sharing

Key Features

Feature	Design Value
Ultra-low Q_g and Q_gd	3.3 nC total gate charge and 0.5 nC gate-to-drain charge minimize switching losses and driver stress
Small footprint	1.0 mm × 1.5 mm DSBGA package reduces PCB area by >50% vs. comparable SO-8 or SOT-23 devices
Low profile	0.62 mm height enables integration beneath thin batteries or stacked modules in wearables and IoT sensors
Pb-free & RoHS compliant	SnAgCu (SNAGCU) ball finish meets IPC-J-STD-020 Level-1 reflow requirements (260°C peak)
Wafer-level packaging	Direct die attach eliminates bond wires, improving thermal resistance and high-frequency stability

Applications

Battery Protection Circuit	USB Type-C Load Switch
Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery discharge path; responds within nanoseconds to protection IC fault signals. Use Value: 27 mΩ R_DS(on) limits voltage drop to <41 mV at 1.5 A, preserving battery runtime and enabling accurate coulomb counting.	Use Scenario: Hot-swap power enable/disable for USB PD 3.0 ports with strict inrush control. IC Role / Device Role / Timing Role: Controlled power rail switch; gate driven by dedicated load-switch controller (e.g., TPS229xx). Use Value: Ultra-low Q_g (3.3 nC) allows full turn-on in <1 µs with 1 mA gate drive, meeting USB PD soft-start timing requirements.
Smartphone Power Management	Wireless Earbud Charging Case
Use Scenario: System-level power domain isolation between AP and peripheral subsystems (e.g., camera, display backlight). IC Role / Device Role / Timing Role: Low-voltage P-channel switch enabling dynamic power gating under PMIC command. Use Value: –0.8 V V_GS(th) ensures robust turn-on with 1.8 V GPIOs, eliminating level-shifters and reducing BOM count.	Use Scenario: Bidirectional power path control between case battery and earbud charging coils. IC Role / Device Role / Timing Role: Compact, low-R_DS(on) switch managing charge/discharge direction in space-limited plastic enclosures. Use Value: 0.62 mm height and 1.5 mm² footprint allow placement directly adjacent to Qi receiver ICs without compromising mechanical clearance.

Battery Protection Circuit

USB Type-C Load Switch

Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery discharge path; responds within nanoseconds to protection IC fault signals.

Use Value: 27 mΩ R_DS(on) limits voltage drop to <41 mV at 1.5 A, preserving battery runtime and enabling accurate coulomb counting.

Use Scenario: Hot-swap power enable/disable for USB PD 3.0 ports with strict inrush control.

IC Role / Device Role / Timing Role: Controlled power rail switch; gate driven by dedicated load-switch controller (e.g., TPS229xx).

Use Value: Ultra-low Q_g (3.3 nC) allows full turn-on in <1 µs with 1 mA gate drive, meeting USB PD soft-start timing requirements.

Smartphone Power Management

Wireless Earbud Charging Case

Use Scenario: System-level power domain isolation between AP and peripheral subsystems (e.g., camera, display backlight).

IC Role / Device Role / Timing Role: Low-voltage P-channel switch enabling dynamic power gating under PMIC command.

Use Value: –0.8 V V_GS(th) ensures robust turn-on with 1.8 V GPIOs, eliminating level-shifters and reducing BOM count.

Use Scenario: Bidirectional power path control between case battery and earbud charging coils.

IC Role / Device Role / Timing Role: Compact, low-R_DS(on) switch managing charge/discharge direction in space-limited plastic enclosures.

Use Value: 0.62 mm height and 1.5 mm² footprint allow placement directly adjacent to Qi receiver ICs without compromising mechanical clearance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2020LFG-7	R_DS(on) = 32 mΩ @ –4.5 V; larger 2 mm × 2 mm SOT-23-6 package; higher Q_g = 5.2 nC	Less suitable for sub-1.5 mm² layouts; better thermal margin on 2 oz. Cu due to larger pad area	Select when board layout permits larger footprint and higher gate drive capability is available
AO3415	R_DS(on) = 45 mΩ @ –4.5 V; SOT-23 package; V_GS(th) = –1.0 V; no wafer-level thermal optimization	Higher conduction loss limits use to ≤1 A loads; less stable threshold over temperature	Choose only for cost-sensitive, non-thermal-critical 1 A applications where size is secondary

Compared with DMN2020LFG-7 and AO3415, CSD25304W1015T provides the lowest R_DS(on) per unit area and fastest switching in its class, making it optimal for miniaturized, high-efficiency battery-powered systems where gate drive current and board space are constrained.

Availability

CSD25304W1015T is available at Aetrix Electronics and suitable for battery protection, USB load switching, and smartphone power management requiring stable component supply and long-term lifecycle support.

Supply support for CSD25304W1015T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, serving industrial, automotive, and consumer markets since 1930.

CSD25304W1015T belongs to TI's NexFET™ Power MOSFET product line, engineered specifically for ultra-compact, high-efficiency DC power switching in portable and wearable electronics.

FAQ

What is the maximum continuous drain current rating for CSD25304W1015T at 105°C?

CSD25304W1015T supports –3.0 A continuous drain current at T_A = 25°C. At 105°C ambient, derating applies per thermal resistance: with R_θJA = 165°C/W on minimal Cu, maximum safe I_D drops to approximately –1.4 A to maintain T_J ≤ 150°C. Always verify using actual board layout thermal metrics before final design.

Does CSD25304W1015T require a gate resistor for ESD protection?

CSD25304W1015T does not require an external gate resistor for ESD protection, but TI explicitly cautions that the device has limited built-in ESD protection. During handling and assembly, leads must be shorted or the device placed in conductive foam. A small series gate resistor (≤10 Ω) is recommended in production circuits to dampen ringing and limit transient gate current, especially in noisy environments.

Can CSD25304W1015T be used in a synchronous buck converter as a high-side switch?

No - CSD25304W1015T is a P-channel MOSFET intended for low-side or high-side load switching, not synchronous rectification in buck converters. Its –20 V V_DS rating and lack of integrated bootstrap circuitry make it unsuitable for high-side N-channel gate drive requirements. For synchronous buck stages, use dedicated N-channel high-side drivers paired with appropriate N-MOSFETs.

What is the land pattern recommendation for CSD25304W1015T's DSBGA package?

The official TI land pattern for CSD25304W1015T (DSBGA YZC) specifies 0.254 mm diameter solder pads with 0.5 mm pitch and 0.86 mm center-to-center spacing. A 0.25 mm stencil aperture is recommended for controlled solder volume. Full dimensions and tolerances are provided in TI's SLPS510A datasheet Section 7.2 and package drawing M0159-01.

Is CSD25304W1015T compatible with lead-free reflow profiles?

Yes - CSD25304W1015T carries an MSL Level-1 rating and is qualified for peak reflow temperatures up to 260°C per JEDEC J-STD-020. Its SnAgCu (SNAGCU) ball finish is fully compatible with standard lead-free reflow profiles, including ramp-soak-reflow cycles with 60–90 second exposure above 217°C.

CSD25304W1015T Specifications

Product attributes: Attribute value

Manufacturer:: Texas Instruments

Series:: NexFET™

Package/Case:: 6-UFBGA, DSBGA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 32.5mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id:: 1.15V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 4.4 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 595 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 750mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-DSBGA (1x1.5)

CSD25304W1015T FAQ

1.How can I place an order for CSD25304W1015T through Aetrix?

Please submit a Request for Quotation (RFQ) for CSD25304W1015T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CSD25304W1015T reliable?

The price and inventory of CSD25304W1015T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD25304W1015T is usually 5 days.

3.What payment methods are accepted for CSD25304W1015T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD25304W1015T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CSD25304W1015T?

CSD25304W1015T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CSD25304W1015T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CSD25304W1015T?

For technical support, including CSD25304W1015T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD25304W1015T requirements.

6.How does Aetrix verify that CSD25304W1015T is sourced from the original manufacturer or authorized distributors?

All CSD25304W1015T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD25304W1015T meets industry standards.

7.What is the process for return or replacement of CSD25304W1015T?

All CSD25304W1015T units undergo pre-shipment inspection (PSI). If there is an issue with CSD25304W1015T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CSD25304W1015T part is unused and in its original packaging.

Return procedure for CSD25304W1015T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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