Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Texas Instruments CSD25310Q2T

Name: CSD25310Q2T
Brand: Texas Instruments
SKU: CSD25310Q2T
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: CSD25310Q2T

Manufacturer:: Texas Instruments

Category:: FETs, MOSFETs

Package:: 6-WDFN Exposed Pad

Datasheet:: CSD25310Q2T.pdf

Description:: MOSFET P-CH 20V 20A 6WSON

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:17,230

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

CSD25310Q2T from Texas Instruments is a P-Channel NexFET™ Power MOSFET optimized for high-efficiency, space-constrained battery protection and load switching. It delivers 19.9 mΩ R_DS(on) at –4.5 V V_GS, 3.6 nC total gate charge, and operates across –55°C to 150°C in a 2 mm × 2 mm WSON (DQK) package with six terminals.

For engineers reviewing the CSD25310Q2T datasheet, CSD25310Q2T pinout, CSD25310Q2T application, or CSD25310Q2T equivalent, key selection criteria include ultra-low Q_g/Q_gd, thermal resistance (R_θJA = 55°C/W on 1 in² Cu), and compatibility with low-voltage gate drive in portable power systems.

Technical Context

This device employs a trench-based P-Channel silicon process to achieve low on-resistance and fast switching with minimal gate drive energy. Its gate threshold voltage of –0.85 V (typical) enables reliable turn-on with standard logic-level controllers, while the 0.5 nC Q_gd minimizes Miller-induced switching losses in high-frequency load-switching topologies.

The integrated body diode exhibits 9.2 nC reverse recovery charge and 13 ns t_rr, supporting synchronous rectification and bidirectional current handling in battery management ICs. Thermal design is enabled by a 4.5°C/W junction-to-case resistance and validated SOA curves up to 48 A pulsed drain current.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	–20 V - supports full discharge range of single-cell Li-ion and Li-polymer batteries
R_DS(on) @ V_GS = –4.5 V	19.9 mΩ - reduces conduction loss to <100 mW at 5 A continuous load
Q_g Total	3.6 nC - enables efficient 1–2 MHz switching with low gate driver power demand
Q_gd	0.5 nC - suppresses shoot-through risk and improves hard-switching robustness
V_GS(th)	–0.85 V - ensures stable turn-on with 1.8 V/2.5 V I/O domains without level shifting
R_θJA	55°C/W - allows 2.9 W power dissipation on standard 1 in² 2 oz. copper PCB
I_D Continuous	–9.6 A - sustains typical battery protection FET current in handheld devices

Pinout & Package

Package: WSON-6 (DQK), 2 mm × 2 mm, 0.65 mm pitch, 0.8 mm max height, exposed thermal pad (pin 6).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source	Four parallel source terminals reduce bond-wire inductance and improve current sharing
5	Gate	Single low-impedance gate input compatible with standard CMOS drivers
6	Drain	Exposed drain pad - primary thermal path to PCB; must be soldered to solid copper pour

Key Features

Feature	Design Value
Ultra-low Q_g and Q_gd	3.6 nC total / 0.5 nC Miller charge - cuts gate drive loss and enables faster switching transitions
Low R_DS(on) at low V_GS	27.0 mΩ @ –2.5 V - supports direct interface with 2.5 V microcontrollers and PMICs
Low thermal resistance	R_θJC = 4.5°C/W - transfers heat efficiently from junction to PCB via exposed drain pad
Halogen-free, RoHS-compliant	Pb-free NiPdAu terminal plating - meets IPC-J-STD-020 moisture sensitivity Level-1 (260°C)
Small outline package	2 mm × 2 mm footprint - saves >60% board area vs. SO-8 equivalents in portable designs

Applications

Battery Protection Circuit	Load Switch for Portable Devices
Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Primary protection FET placed between battery anode and system ground, controlled by battery management IC. Use Value: 19.9 mΩ R_DS(on) limits voltage drop to <100 mV at 5 A, preserving battery runtime and thermal margin.	Use Scenario: Controlled power-up/down sequencing of USB-C peripherals and sensors in wearables. IC Role / Device Role / Timing Role: High-side load switch enabling precise inrush current limiting and system isolation. Use Value: 3.6 nC Q_g allows clean 10 µs turn-on/turn-off control using low-power GPIOs without external gate drivers.
Smartphone Power Path Management	Wireless Earbud Charging Case
Use Scenario: Dual-path power routing between USB input and battery during charging and system operation. IC Role / Device Role / Timing Role: Back-to-back P-Channel FET pair for ideal diode and reverse-blocking functionality. Use Value: Low V_GS(th) (–0.85 V) ensures consistent turn-on across temperature and process variation, eliminating need for bias networks.	Use Scenario: Battery disconnect during lid-open detection and low-power sleep mode activation. IC Role / Device Role / Timing Role: Low-quiescent-load switch isolating main battery from charging circuitry and Bluetooth SoC. Use Value: 1 μA I_DSS leakage at –16 V ensures >1-year shelf life without significant self-discharge in sealed earbud cases.

Battery Protection Circuit

Load Switch for Portable Devices

Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: Primary protection FET placed between battery anode and system ground, controlled by battery management IC.

Use Value: 19.9 mΩ R_DS(on) limits voltage drop to <100 mV at 5 A, preserving battery runtime and thermal margin.

Use Scenario: Controlled power-up/down sequencing of USB-C peripherals and sensors in wearables.

IC Role / Device Role / Timing Role: High-side load switch enabling precise inrush current limiting and system isolation.

Use Value: 3.6 nC Q_g allows clean 10 µs turn-on/turn-off control using low-power GPIOs without external gate drivers.

Smartphone Power Path Management

Wireless Earbud Charging Case

Use Scenario: Dual-path power routing between USB input and battery during charging and system operation.

IC Role / Device Role / Timing Role: Back-to-back P-Channel FET pair for ideal diode and reverse-blocking functionality.

Use Value: Low V_GS(th) (–0.85 V) ensures consistent turn-on across temperature and process variation, eliminating need for bias networks.

Use Scenario: Battery disconnect during lid-open detection and low-power sleep mode activation.

IC Role / Device Role / Timing Role: Low-quiescent-load switch isolating main battery from charging circuitry and Bluetooth SoC.

Use Value: 1 μA I_DSS leakage at –16 V ensures >1-year shelf life without significant self-discharge in sealed earbud cases.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-Channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG2302UK-7	R_DS(on) = 42 mΩ @ –4.5 V; Q_g = 5.2 nC; SOT-23-3 package	Higher conduction loss and larger footprint; limited thermal performance (R_θJA ≈ 200°C/W)	Acceptable for sub-2 A loads where board space is less constrained and thermal budget permits higher ΔT
Si2301BDS-T1-GE3	R_DS(on) = 115 mΩ @ –4.5 V; Q_g = 3.0 nC; SOT-23-3 package	Lower gate charge but significantly higher on-resistance; unsuitable for >1.5 A continuous operation	Only viable for ultra-low-power always-on monitoring circuits with peak currents <500 mA

Compared with DMG2302UK-7 and Si2301BDS-T1-GE3, the CSD25310Q2T provides superior power density and thermal capability due to its 2 mm × 2 mm WSON package, 19.9 mΩ R_DS(on), and 4.5°C/W R_θJC, making it the preferred choice for compact, high-current battery protection in consumer electronics.

Availability

CSD25310Q2T is available at Aetrix Electronics and suitable for battery management, load management, and battery protection applications requiring stable component supply, traceable sourcing, and long-term lifecycle support.

Supply support for CSD25310Q2T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader delivering analog, embedded processing, and connectivity solutions for industrial, automotive, and personal electronics markets.

The NexFET™ Power MOSFET product line targets high-efficiency, high-density power conversion and control in portable, battery-powered, and thermally constrained systems - with CSD25310Q2T specifically engineered for ultra-low-profile load switching and protection.

FAQ

What is the maximum continuous drain current rating for CSD25310Q2T at 25°C ambient?

The CSD25310Q2T has a continuous drain current rating of –9.6 A at T_A = 25°C, based on package thermal limits. This value assumes proper PCB layout with 1 in² of 2 oz. copper for heatsinking. At higher ambient temperatures or reduced copper area, derating is required per the SOA curve in the datasheet. The CSD25310Q2T maintains safe operation up to 150°C junction temperature under these conditions.

Does CSD25310Q2T support gate drive from a 1.8 V microcontroller output?

Yes, the CSD25310Q2T features a gate threshold voltage (V_GS(th)) of –0.85 V (typical), and delivers 27.0 mΩ R_DS(on) at –2.5 V V_GS. While full enhancement requires ≥–4.5 V, the CSD25310Q2T achieves usable conduction at 1.8 V logic levels when paired with appropriate pull-down biasing. For robust 1.8 V operation, verify actual R_DS(on) and power loss at target load current using Figure 4-7 (R_DS(on) vs V_GS) in the CSD25310Q2T datasheet.

What is the recommended PCB layout for optimal thermal performance of CSD25310Q2T?

Optimal thermal performance for the CSD25310Q2T requires soldering the exposed drain pad (pin 6) to a minimum 1 in² (6.45 cm²) copper pour of 2 oz. thickness on a 0.060-inch FR4 board. Thermal vias (≥6× 0.3 mm diameter) should connect the pad to inner or backside ground planes. Avoid splitting the thermal pad or placing silkscreen over it. This layout achieves the specified R_θJA = 55°C/W; smaller copper areas increase thermal resistance significantly, as shown in the M0137-02 diagram for the CSD25310Q2T.

Is CSD25310Q2T suitable for reverse polarity protection in automotive accessory circuits?

No - the CSD25310Q2T is rated for –20 V V_DS and –55°C to +150°C operating range, but it is not AEC-Q101 qualified and lacks automotive-grade screening, transient immunity, or extended voltage tolerance required for 12 V automotive systems (which experience load dump transients up to +40 V). Use only in consumer, medical, or industrial battery-powered applications. For automotive reverse polarity protection, select an AEC-Q101-qualified P-Channel MOSFET with ≥40 V V_DS rating.

How does the body diode performance of CSD25310Q2T impact its use in bidirectional current paths?

The CSD25310Q2T body diode exhibits V_SD = –0.8 V to –1.0 V at –5 A and t_rr = 13 ns with Q_rr = 9.2 nC, enabling efficient reverse conduction in battery backup and power-path OR-ing configurations. Its low Q_rr minimizes switching loss during commutation, and the fast t_rr reduces cross-conduction risk in synchronous designs. However, the diode is not optimized for continuous forward conduction - sustained reverse current must remain within the device's SOA limits, as defined in Figure 4-10 of the CSD25310Q2T datasheet.

CSD25310Q2T Specifications

Product attributes: Attribute value

Manufacturer:: Texas Instruments

Series:: NexFET™

Package/Case:: 6-WDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 23.9mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id:: 1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 4.7 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 655 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.9W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-WSON (2x2)

CSD25310Q2T FAQ

1.How can I place an order for CSD25310Q2T through Aetrix?

Please submit a Request for Quotation (RFQ) for CSD25310Q2T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CSD25310Q2T reliable?

The price and inventory of CSD25310Q2T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD25310Q2T is usually 5 days.

3.What payment methods are accepted for CSD25310Q2T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD25310Q2T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CSD25310Q2T?

CSD25310Q2T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CSD25310Q2T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CSD25310Q2T?

For technical support, including CSD25310Q2T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD25310Q2T requirements.

6.How does Aetrix verify that CSD25310Q2T is sourced from the original manufacturer or authorized distributors?

All CSD25310Q2T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD25310Q2T meets industry standards.

7.What is the process for return or replacement of CSD25310Q2T?

All CSD25310Q2T units undergo pre-shipment inspection (PSI). If there is an issue with CSD25310Q2T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CSD25310Q2T part is unused and in its original packaging.

Return procedure for CSD25310Q2T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…