My Inquiry
My Account
Texas Instruments CSD25480F3T
- Part No.:
- CSD25480F3T
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 3-XFDFN
- Datasheet:
-
CSD25480F3T.pdf
- Description:
- MOSFET P-CH 20V 1.7A 3PICOSTAR
- Quantity:
- Payment:
- Shipping:
Inventory:16,604
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CSD25480F3T from Texas Instruments is a –20-V, 110-mΩ P-Channel FemtoFET™ MOSFET in a 0.73 mm × 0.64 mm × 0.36 mm LGA package, optimized for ultra-compact load switching in battery-powered handheld devices. It delivers 1.7-A continuous drain current, 0.7-nC total gate charge, and integrated ESD protection (4 kV HBM), enabling space-constrained power management with low drive loss.
For engineers reviewing the CSD25480F3T datasheet, CSD25480F3T pinout, CSD25480F3T application, or CSD25480F3T equivalent, key selection criteria include its ultra-small footprint, low RDS(on) at –4.5 V (132 mΩ), sub-1-nC Qg, 0.36-mm max height, and suitability for high-density mobile PCB layouts requiring minimal thermal resistance (RθJA = 90°C/W on 1-in² Cu).
Technical Context
This P-Channel enhancement-mode MOSFET uses TI's FemtoFET™ silicon process to achieve ultra-low gate charge (Qg = 0.7 nC, Qgd = 0.10 nC) and compact 3-terminal LGA packaging. Its threshold voltage (VGS(th) = –0.95 V typ.) enables reliable turn-on with low-voltage logic control, while the integrated body diode supports reverse-current paths in bidirectional switching topologies.
The device operates across –55°C to 150°C junction temperature, with absolute maximum ratings of –20 V VDS, –12 V VGS, and 500 mW power dissipation. Thermal performance is specified for two mounting conditions: RθJA = 90°C/W (1-in² Cu) and 255°C/W (minimum Cu), directly informing layout decisions for thermal reliability in thin-profile portable designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | –20 V - Maximum drain-to-source blocking voltage for battery-input circuits up to 20 V. |
| RDS(on) @ VGS = –4.5 V | 132 mΩ - Low conduction loss enabling <1.7-A continuous current with <0.4-W I²R heating at full load. |
| Qg | 0.7 nC - Enables fast switching with minimal gate-drive energy, reducing dynamic losses in high-frequency load switching. |
| Package Dimensions | 0.73 mm × 0.64 mm × 0.36 mm - Ultra-miniature LGA footprint saves >50% board area vs. standard SOT-23 or SC-70 packages. |
| VGS(th) | –0.95 V - Ensures robust turn-on with common 1.8-V or 2.5-V logic outputs without level-shifting circuitry. |
| HBM ESD Rating | 4000 V - Integrated protection eliminates need for external ESD components in consumer handheld interfaces. |
| ID Continuous | –1.7 A - Supports typical load-switch currents in USB peripherals, display backlight drivers, and sensor power rails. |
Pinout & Package
Packaged in a 3-terminal Picostar™ (YJM) Land Grid Array (LGA) with 0.73 mm × 0.64 mm footprint and 0.36-mm max height. The package uses solder-bump interconnects and is lead-free, halogen-free, and RoHS compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal; accepts –1.8 V to –8 V logic-level drive; low Qg minimizes gate driver loading. |
| Pin 2 | Source | Reference node for gate drive; tied to system ground or higher-potential rail depending on load-switch topology. |
| Pin 3 | Drain | Switched output node; connects to load; rated for –20 V blocking and –1.7 A continuous conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low Qg and Qgd | 0.7 nC total / 0.10 nC gate-to-drain charge reduces switching transition time and driver power consumption. |
| 0.73 mm × 0.64 mm footprint | Reduces PCB real estate by >60% vs. SC-70-3, enabling placement under connectors or near IC edges in tight layouts. |
| 0.36-mm max height | Enables use in ultra-thin devices (e.g., wearables, slim tablets) where component stack height is constrained. |
| Integrated ESD protection | 4-kV HBM rating eliminates discrete TVS diodes in battery-input and USB switch paths, simplifying BOM. |
| P-Channel logic-level operation | VGS(th) = –0.95 V allows direct drive from 1.8-V microcontrollers, removing level-shifters and associated passives. |
Applications
| Battery Load Switching | USB Peripheral Power Control |
|---|---|
|
Use Scenario: Isolating backup battery from main system during sleep mode to prevent leakage current and extend standby time. IC Role / Device Role / Timing Role: High-side P-Channel load switch controlling power path between Li-ion cell and PMIC input rail. Use Value: 110-mΩ RDS(on) at –8 V ensures <15-mV dropout at 130-mA standby current, minimizing quiescent loss. |
Use Scenario: Enabling/disabling 5-V power to USB accessories (e.g., OTG adapters, card readers) based on host enumeration status. IC Role / Device Role / Timing Role: Logic-controlled power gate placed between USB VBUS and peripheral input, driven by USB controller GPIO. Use Value: 0.7-nC Qg allows clean 10-ns turn-on/turn-off transitions, preventing bus glitches during hot-plug events. |
| Display Backlight Dimming | IoT Sensor Node Power Gating |
|
Use Scenario: PWM-controlled current source for white LED backlight in smartwatch displays, requiring low-profile, low-loss switching. IC Role / Device Role / Timing Role: Low-side or high-side switch modulating LED current path at 1–10 kHz PWM frequency. Use Value: 0.36-mm height fits within 1.2-mm total stack-up; 132-mΩ RDS(on) at –4.5 V limits conduction loss to <0.2 W at 400-mA peak current. |
Use Scenario: Powering intermittent-use sensors (e.g., environmental, motion) only during active measurement cycles to minimize average current draw. IC Role / Device Role / Timing Role: Always-on microcontroller GPIO-driven switch isolating sensor supply rail from main battery. Use Value: Integrated 4-kV HBM ESD protection withstands handling in unshielded IoT assembly environments without added protection components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-Channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2053UCB-7 | Higher RDS(on) (200 mΩ @ –4.5 V), larger 1.0 mm × 0.6 mm footprint, no integrated ESD diode. | Suitable for less space-constrained industrial modules where ESD protection is externally managed. | Select when board area permits larger package and external ESD design is already in place. |
| AO3415 | SC-70-3 package (1.25 mm × 0.8 mm), higher profile (0.9 mm), RDS(on) = 50 mΩ @ –10 V but requires higher gate drive voltage. | Better for cost-sensitive applications where 0.36-mm height is not critical and 10-V gate drive is available. | Choose if gate voltage ≥ –8 V is guaranteed and vertical clearance allows taller components. |
Compared with DMN2053UCB-7 and AO3415, the CSD25480F3T provides the smallest footprint and lowest height among P-Channel MOSFETs with integrated ESD, making it uniquely suited for next-generation ultra-thin mobile and wearable power switches where board area and Z-height are primary constraints.
Availability
CSD25480F3T is available at Aetrix Electronics and suitable for battery load switching, USB peripheral power control, display backlight dimming, and IoT sensor node power gating requiring stable component supply and consistent tape-and-reel delivery for SMT production.
Supply support for CSD25480F3T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management technologies, with over 90 years of innovation in high-reliability electronic components.
The CSD25480F3T belongs to TI's FemtoFET™ MOSFET product line, engineered specifically for ultra-miniaturized power switching in space- and height-constrained portable electronics such as smartphones, wearables, and medical patches.
FAQ
What is the maximum continuous drain current rating for the CSD25480F3T?
The CSD25480F3T is rated for –1.7 A continuous drain current at TA = 25°C with proper PCB copper area. This rating assumes a 1-in² (6.45 cm²) 2-oz copper pad; derating applies at higher ambient temperatures or reduced copper area, per the datasheet's Figure 5-11.
Does the CSD25480F3T require an external gate resistor for typical load-switch applications?
No, the CSD25480F3T does not require an external gate resistor in most load-switch configurations due to its ultra-low Qg (0.7 nC) and low gate resistance (16 Ω). However, a small series resistor (≤10 Ω) may be added to dampen ringing in high-speed PWM applications or long PCB traces.
What is the recommended PCB land pattern for the CSD25480F3T?
Texas Instruments specifies a symmetric land pattern with 0.4 mm × 0.35 mm solder pads, 0.15 mm solder mask opening, and 0.05 mm minimum solder mask web. The exact dimensions are detailed in Section 7.2 of the CSD25480F3T datasheet (SLPS578B) and must be followed to ensure reliable reflow and mechanical attachment.
Is the CSD25480F3T compatible with lead-free reflow profiles?
Yes, the CSD25480F3T is qualified for lead-free reflow with a moisture sensitivity level (MSL) rating of Level-1 at 260°C peak, per JEDEC J-STD-020. It uses NiAu (NIAU) lead finish and is shipped in dry-packed tape-and-reel format compliant with IPC/JEDEC standards.
How does the integrated ESD protection in the CSD25480F3T compare to external TVS diodes?
The CSD25480F3T integrates a 4-kV HBM ESD protection structure across its terminals, eliminating the need for discrete TVS diodes in many battery-input and USB switch applications. Unlike external TVS devices, this protection adds zero footprint and parasitic capacitance, preserving signal integrity and layout simplicity.
CSD25480F3T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- FemtoFET™
- Package/Case:
- 3-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 8V
- Rds On (Max) @ Id, Vgs:
- 132mOhm @ 400mA, 8V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.91 nC @ 10 V
- Vgs (Max):
- -12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 155 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-PICOSTAR
CSD25480F3T FAQ
1.How can I place an order for CSD25480F3T through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD25480F3T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD25480F3T reliable?
The price and inventory of CSD25480F3T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD25480F3T is usually 5 days.
3.What payment methods are accepted for CSD25480F3T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD25480F3T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD25480F3T?
CSD25480F3T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD25480F3T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD25480F3T?
For technical support, including CSD25480F3T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD25480F3T requirements.
6.How does Aetrix verify that CSD25480F3T is sourced from the original manufacturer or authorized distributors?
All CSD25480F3T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD25480F3T meets industry standards.
7.What is the process for return or replacement of CSD25480F3T?
All CSD25480F3T units undergo pre-shipment inspection (PSI). If there is an issue with CSD25480F3T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD25480F3T part is unused and in its original packaging.
Return procedure for CSD25480F3T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CSD25480F3T Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
