Texas Instruments CSD25483F4T

Overview

CSD25483F4T from Texas Instruments is a 20-V P-Channel FemtoFET™ MOSFET in a 0402-size LGA package (1.0 mm × 0.6 mm, 0.36-mm max height), optimized for ultra-compact load switching in space-constrained mobile and battery-powered systems. It delivers R_DS(on) = 210 mΩ at V_GS = –4.5 V, Q_g = 959 pC, and integrated >4-kV HBM ESD protection.

For engineers reviewing the CSD25483F4T datasheet, CSD25483F4T pinout, CSD25483F4T application, or CSD25483F4T equivalent, this page provides verified electrical specs, thermal performance data, PCB layout guidance, and real-world switching use cases - all confirmed against TI's SLPS449F production datasheet (Rev F, Jan 2022).

Technical Context

This P-channel enhancement-mode MOSFET uses silicon process technology to achieve femtoscale footprint reduction while maintaining robust gate drive compatibility with 1.8-V to 4.5-V logic. Its low Q_gd/Q_g ratio (161/959 pC) supports fast, low-loss switching transitions in high-frequency load control circuits.

The device integrates an ESD diode rated >4-kV HBM and >2-kV CDM, operates across –55°C to 150°C junction temperature, and features a thermally enhanced LGA package with direct die-to-PCB thermal path - enabling 500 mW power dissipation at 85°C/W on standard FR4 with 1-inch² copper pad.

Key Specifications

Pinout & Package

Packaged in PICOSTAR (YJC) 3-terminal Land Grid Array (LGA) - 0402 footprint (1.0 mm × 0.6 mm), 0.36-mm maximum height, lead-free and RoHS compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with DMN2011UFG-7 and SI2301DDS-T1-BE3, the CSD25483F4T uniquely combines 0402 size, integrated >4-kV HBM ESD, and sub-215-mΩ R_DS(on) - making it the only option that satisfies simultaneous requirements for miniaturization, robustness, and low-loss switching in next-gen portable electronics.

Availability

CSD25483F4T is available at Aetrix Electronics and suitable for battery management, USB power delivery, and wearable sensor applications requiring stable component supply and long-term manufacturability.

Supply support for CSD25483F4T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management technologies, with over 90 years of innovation in high-reliability electronic components.

The CSD25483F4T belongs to TI's FemtoFET™ MOSFET product line - engineered specifically for ultra-miniature, high-density portable electronics where board area and profile are primary constraints.

FAQ

What is the maximum continuous drain current rating for the CSD25483F4T?

The CSD25483F4T has a continuous drain current (I_D) rating of –1.6 A at T_A = 25°C with 1-inch² 2-oz copper on FR4. This value decreases with rising ambient temperature - e.g., ~1.1 A at 70°C ambient - per Figure 5-11 in the SLPS449F datasheet. Derating must follow the 85°C/W thermal resistance curve for accurate system-level thermal design.

Does the CSD25483F4T include built-in ESD protection, and what are the ratings?

Yes, the CSD25483F4T integrates an ESD protection diode rated >4-kV HBM (Human Body Model) and >2-kV CDM (Charged Device Model), as confirmed in Section 1 Features and Absolute Maximum Ratings of the TI SLPS449F datasheet. This eliminates the need for discrete TVS components in most portable interface applications.

What is the gate threshold voltage range for the CSD25483F4T, and how does it affect low-voltage operation?

The CSD25483F4T has a gate threshold voltage (V_GS(th)) range of –0.70 V to –1.2 V, with a typical value of –0.95 V at I_DS = –250 μA. This enables reliable turn-on with 1.8-V logic outputs, supporting direct interfacing to modern low-power MCUs and PMICs without level shifters - critical for energy-efficient portable designs.

Can the CSD25483F4T be used in high-frequency PWM applications, and what gate charge parameters support this?

Yes, the CSD25483F4T is suited for high-frequency PWM switching up to 1–2 MHz due to its low total gate charge (Q_g = 959 pC) and low gate-to-drain charge (Q_gd = 161 pC). Measured turn-on delay (t_d(on)) is 4.3 ns and fall time (t_f) is 7 ns under standard test conditions - enabling fast, low-loss transitions in compact DC-DC load switches and LED drivers.

What is the recommended PCB land pattern and stencil design for the CSD25483F4T?

TI specifies a symmetric 3-pad land pattern with dimensions (0.65 mm × 0.35 mm) for each terminal, 0.25-mm solder mask opening, and a 0.05-mm minimum solder mask web. Stencil aperture should be 0.25 mm × 0.15 mm per pad with 0.05-mm thickness - detailed in Section 7.2 and 7.3 of SLPS449F. These ensure reliable reflow, coplanarity, and thermal performance in high-volume SMT assembly.