Texas Instruments CSD25484F4T

Overview

CSD25484F4T from Texas Instruments is a –20-V P-Channel FemtoFET™ MOSFET optimized for ultra-compact load switching in space-constrained mobile systems, featuring 80 mΩ R_DS(on) at V_GS = –8 V, 1090 pC total gate charge, and integrated >4-kV HBM ESD protection. It delivers high current density (–2.5 A continuous) in a 1.0 mm × 0.6 mm × 0.2 mm LGA package for battery-powered handheld devices.

For engineers reviewing the CSD25484F4T datasheet, CSD25484F4T pinout, CSD25484F4T application, or CSD25484F4T equivalent, key selection criteria include its ultra-low footprint, low-threshold voltage (–0.95 V typ), sub-100-mΩ on-resistance across operating V_GS, and verified performance in high-density PCB layouts with minimal thermal resistance (R_θJA = 85°C/W).

Technical Context

This device uses a silicon-based P-Channel enhancement-mode MOSFET structure with source-connected substrate and integrated body diode, enabling bidirectional blocking and synchronous rectification support. Its gate threshold voltage (–0.95 V typ) ensures reliable turn-on with low-voltage logic controllers, while ultra-low Q_g (1090 pC) and Q_gd (150 pC) minimize switching losses in high-frequency load-switching circuits.

The PICOSTAR (YJJ) 3-terminal Land Grid Array package features solderable top-side terminals-Gate, Source, Drain-with no exposed leads, supporting reflow-compatible assembly and mechanical robustness under board flex. Thermal performance is characterized on 1-in² 2-oz Cu FR4, delivering 500 mW power dissipation capability at T_A = 25°C.

Key Specifications

Pinout & Package

Packaged in the PICOSTAR (YJJ) 3-terminal Land Grid Array (LGA) format, the CSD25484F4T measures 1.0 mm × 0.6 mm with 0.2-mm maximum height and features top-side solderable terminals only - no bottom-side pads or exposed thermal slug.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with DMN2020LFG-7 and Si2301DDS-T1-GE3, the CSD25484F4T provides the smallest PCB footprint, highest ESD immunity, and lowest gate charge - making it the only option qualified for next-generation sub-10-mm-thick mobile devices requiring >4-kV system-level ESD compliance without layout overhead.

Availability

CSD25484F4T is available at Aetrix Electronics and suitable for battery management, USB-C power delivery sink paths, display backlight drivers, and smartphone camera module power gating requiring stable component supply and guaranteed long-term sourcing.

Supply support for CSD25484F4T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and digital signal processing technologies, with over 90 years of innovation in power management and precision analog design.

The CSD25484F4T belongs to TI's FemtoFET™ MOSFET product line, engineered specifically for ultra-miniaturized load switching in handheld, wearable, and portable electronics where board space and profile are primary constraints.

FAQ

What is the maximum continuous drain current rating for the CSD25484F4T?

The CSD25484F4T is rated for –2.5 A continuous drain current at T_A = 25°C on a 1-in² 2-oz Cu FR4 PCB. This value assumes typical junction-to-ambient thermal resistance of 85°C/W. At elevated ambient temperatures or reduced copper area, derating is required per the device's thermal curves in the datasheet. The CSD25484F4T maintains safe operation up to 150°C junction temperature.

Does the CSD25484F4T require external ESD protection in handheld designs?

No, the CSD25484F4T integrates an ESD protection diode rated >4 kV HBM and >2 kV CDM, meeting IEC 61000-4-2 Level 3 requirements without external components. This eliminates discrete TVS devices in battery-input and USB-C VBUS paths, reducing BOM cost and PCB area. The CSD25484F4T's internal protection is validated per JEDEC JS-001 and JS-002 standards.

What is the gate threshold voltage range for the CSD25484F4T, and how does it affect logic-level compatibility?

The CSD25484F4T has a gate threshold voltage range of –0.7 V to –1.2 V, with a typical value of –0.95 V. This low V_GS(th) ensures full enhancement with 1.2-V, 1.8-V, or 2.5-V logic outputs - enabling direct drive from modern microcontrollers and PMIC enable pins without level shifters. The CSD25484F4T achieves 150 mΩ R_DS(on) at just –2.5 V gate drive, supporting low-voltage system architectures.

Can the CSD25484F4T be used in high-frequency PWM applications such as display backlight control?

Yes, the CSD25484F4T is optimized for high-frequency switching with 9.5 ns turn-on delay, 5 ns rise time, 18 ns turn-off delay, and 8.5 ns fall time at V_GS = –4.5 V and R_G = 10 Ω. Its ultra-low Q_g (1090 pC) and Q_gd (150 pC) minimize switching losses in 1–5 MHz PWM backlight drivers. The CSD25484F4T's thermal performance supports sustained operation at these frequencies without derating in properly designed layouts.

What is the recommended PCB land pattern for the CSD25484F4T's PICOSTAR package?

Texas Instruments specifies a symmetric land pattern with 0.65 mm × 0.35 mm pads for Pins 1 (Gate) and 2 (Source), and a 0.5 mm × 0.25 mm pad for Pin 3 (Drain), all with 0.05 mm minimum solder mask opening clearance. The CSD25484F4T requires a 0.15 mm stencil aperture for Pin 1 and Pin 2, and 0.2 mm for Pin 3, using a 0.075–0.1 mm thick stencil. These dimensions ensure reliable solder joint formation and coplanarity control for the 0.2-mm profile CSD25484F4T.