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Texas Instruments CSD25485F5T
- Part No.:
- CSD25485F5T
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 3-XFDFN
- Datasheet:
-
CSD25485F5T.pdf
- Description:
- MOSFET P-CH 20V 5.3A 3PICOSTAR
- Quantity:
- Payment:
- Shipping:
Inventory:3,485
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Product details
Overview
CSD25485F5T from Texas Instruments is a –20-V P-Channel FemtoFET™ MOSFET in a 1.53 mm × 0.77 mm PICOSTAR (YJK) package with 3 terminals, optimized for ultra-compact industrial load switching and general-purpose low-voltage DC switching. It delivers RDS(on) = 29.7 mΩ at VGS = –8 V, Qg = 2.7 nC, and integrated ESD protection rated >4-kV HBM.
For engineers reviewing the CSD25485F5T datasheet, CSD25485F5T pinout, CSD25485F5T application, or CSD25485F5T equivalent, this page provides verified electrical specs, thermal performance under min/max copper PCB conditions, gate charge behavior across VGS, SOA curves, and validated alternative parts for footprint-constrained portable and industrial designs.
Technical Context
This P-channel enhancement-mode MOSFET uses TI's FemtoFET™ silicon process to achieve ultra-low profile (0.36-mm max height) and minimal footprint while maintaining robust switching performance. Its gate threshold voltage (VGS(th) = –0.95 V typ) enables reliable turn-on with low-voltage logic-level control down to –1.8 V.
The device integrates an ESD protection diode (4-kV HBM, 2-kV CDM), supports pulsed drain current up to –31 A, and exhibits low dynamic capacitances (Ciss = 533 pF typ, Crss = 23 pF typ) for fast switching with reduced Miller effect. Thermal resistance ranges from 90°C/W (max Cu) to 245°C/W (min Cu), directly linking PCB layout to power handling capability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | –20 V - Maximum blocking voltage for low-voltage DC rails including USB PD, battery management, and 12-V industrial I/O. |
| RDS(on) | 29.7 mΩ at VGS = –8 V - Enables ≤100-mW conduction loss at 1.8-A continuous load, critical for thermally constrained handheld PCBs. |
| Qg | 2.7 nC - Low total gate charge reduces drive power and enables efficient operation with weak GPIO or low-current drivers. |
| ID Continuous | –3.2 A (min Cu), –5.3 A (max Cu) - Current rating scales directly with PCB copper area, requiring layout-aware thermal design. |
| VGS(th) | –0.95 V typ - Ensures full enhancement with standard –1.8 V or –2.5 V logic outputs, eliminating need for level-shifting circuitry. |
| ESD Rating | >4-kV HBM / >2-kV CDM - Integrated protection eliminates external TVS diodes in space-limited consumer and medical sensor modules. |
| Package | PICOSTAR (YJK), 1.53 mm × 0.77 mm, 0.50-mm pad pitch - Smallest surface-mount P-channel MOSFET footprint offered by TI for sub-2-mm² board area savings. |
Pinout & Package
Packaged in a 3-terminal leadless PICOSTAR (YJK) package measuring 1.53 mm × 0.77 mm × 0.36 mm max, with solderable top-side terminals and no exposed thermal pad. The package is RoHS-compliant, halogen-free, and qualified for reflow per JEDEC Level-1-260°C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal; accepts –12 V max gate-source voltage; low Qg enables fast edge rates with minimal driver strength. |
| Pin 2 | Source | Reference node for gate drive; tied to system ground or higher-potential rail depending on high-side vs low-side switch topology. |
| Pin 3 | Drain | Power output terminal; connects to load; rated for –20 V blocking and –31 A pulsed current under defined thermal conditions. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small footprint | 1.53 mm × 0.77 mm area - Reduces PCB real estate by >60% versus SOT-23 or SC-70 P-channel MOSFETs in portable power switches. |
| Low-profile height | 0.36 mm max - Enables use under mechanical shields, in stacked modules, or behind thin displays where Z-height is constrained. |
| Integrated ESD protection | >4-kV HBM - Eliminates discrete ESD diodes in wearable electronics and IoT sensor nodes without sacrificing board area. |
| Low Qgd/Qg ratio | 0.56 nC / 2.7 nC = 20.7% - Minimizes Miller-induced switching delay and improves controllability during hard commutation events. |
| Lead- and halogen-free | RoHS-compliant construction - Meets global environmental compliance requirements for medical, industrial, and consumer end equipment. |
Applications
| Industrial Load Switch | USB-C Power Path Control |
|---|---|
|
Use Scenario: Power sequencing of auxiliary sensors and actuators in programmable logic controllers (PLCs) with strict board area limits. IC Role / Device Role: High-side load switch controlling 3.3-V or 5-V peripheral rails using microcontroller GPIO. Use Value: 29.7-mΩ RDS(on) limits voltage drop to <100 mV at 3.2 A, preserving regulation margin while fitting within 1.2-mm² PCB area. |
Use Scenario: Reverse-polarity protection and hot-swap control in compact USB-C power delivery adapters. IC Role / Device Role: P-channel back-to-back switch isolating upstream/downstream power paths during plug insertion/removal. Use Value: Integrated 4-kV HBM ESD protection withstands repeated connector mating cycles without external clamping components. |
| Medical Wearable Sensor Hub | Smart Home Battery Management |
|
Use Scenario: On-demand power gating of optical heart-rate monitors and accelerometers in ultra-thin fitness bands. IC Role / Device Role: Low-quiescent-load enable switch activated by BLE SoC wake signals to minimize standby current. Use Value: 0.36-mm height clears tight mechanical gaps between flex PCB and housing, while 2.7-nC Qg ensures fast turn-on from sleep states. |
Use Scenario: Cell balancing and protection FET in 2S Li-ion packs for smart locks and thermostats. IC Role / Device Role: Secondary overcurrent cutoff switch placed between battery pack and system load. Use Value: –20-V VDS rating safely covers full 2S Li-ion range (0–8.4 V), and 0.5-W power dissipation allows direct mounting on small FR4 sections. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LFG-7 | RDS(on) = 42 mΩ @ –4.5 V; larger 2.0 mm × 2.0 mm package; no integrated ESD diode. | Requires external ESD protection; less suitable for space-critical wearables but offers higher thermal mass for sustained 4-A loads. | Select when higher continuous current and simpler thermal design outweigh footprint constraints. |
| Si2301DDS-T1-BE3 | RDS(on) = 90 mΩ @ –2.5 V; same 1.6 mm × 1.6 mm footprint; 2000-cycle qualification only (vs TI's 10k-cycle reliability test). | Limited to lower-current (<1.5 A) applications; lacks documented CDM rating; not recommended for medical-grade ESD immunity. | Choose only for cost-sensitive non-safety-critical consumer accessories with relaxed ESD and lifetime requirements. |
Compared with DMN2020LFG-7 and Si2301DDS-T1-BE3, the CSD25485F5T uniquely combines sub-2-mm² footprint, integrated 4-kV HBM/2-kV CDM protection, and 29.7-mΩ RDS(on) at –8 V-enabling single-device solutions in medical wearables, USB-C accessories, and ultra-dense industrial I/O modules where board area and reliability are co-constrained.
Availability
CSD25485F5T is available at Aetrix Electronics and suitable for industrial load switching, USB-C power path control, medical wearable sensor hubs, and smart home battery management requiring stable component supply and guaranteed long-term sourcing.
Supply support for CSD25485F5T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with over 90 years of innovation in high-reliability electronic components.
The CSD25485F5T belongs to TI's FemtoFET™ MOSFET product line, engineered specifically for ultra-miniaturized DC power switching in space- and height-constrained portable, medical, and industrial electronics.
FAQ
What is the maximum continuous drain current rating for the CSD25485F5T?
The CSD25485F5T supports –3.2 A continuous drain current under minimum copper PCB conditions (RθJA = 245°C/W), and –5.3 A under maximum copper conditions (RθJA = 90°C/W). These values assume TA = 25°C and are strictly dependent on PCB thermal design-actual current must be derated per the SOA curve in Figure 5-10 of the datasheet.
Does the CSD25485F5T require an external ESD protection diode?
No, the CSD25485F5T integrates an ESD protection diode rated >4-kV HBM and >2-kV CDM, eliminating the need for external ESD components in most portable and industrial applications. This integration is confirmed in Section 1 Features and Table 5.1 of the official TI datasheet SLPS606B.
What is the gate threshold voltage range for the CSD25485F5T?
The CSD25485F5T has a gate threshold voltage (VGS(th)) range of –0.7 V to –1.3 V, with a typical value of –0.95 V at IDS = –250 µA. This allows reliable turn-on with –1.8 V or –2.5 V logic-level signals, making it compatible with common low-voltage microcontrollers without gate driving circuitry.
Can the CSD25485F5T be used in high-side switch configurations?
Yes, the CSD25485F5T is a P-channel MOSFET optimized for high-side switching. Its –20-V VDS rating and –12-V VGS limit support placement between supply rail and load, with gate driven relative to source. Layout must observe recommended minimum PCB land pattern (Section 7.2) to maintain thermal and electrical integrity.
What is the package type and dimensions of the CSD25485F5T?
The CSD25485F5T uses the PICOSTAR (YJK) package: a 3-terminal, leadless, surface-mount package measuring 1.53 mm × 0.77 mm × 0.36 mm max height, with 0.50-mm pad pitch. Mechanical drawings and tape-and-reel specifications are documented in TI's SLPS606B datasheet, Package Outline YJK0003A.
CSD25485F5T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- FemtoFET™
- Package/Case:
- 3-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 8V
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 900mA, 8V
- Vgs(th) (Max) @ Id:
- 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.5 nC @ 4.5 V
- Vgs (Max):
- -12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 533 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.4W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-PICOSTAR
CSD25485F5T FAQ
1.How can I place an order for CSD25485F5T through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD25485F5T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD25485F5T reliable?
The price and inventory of CSD25485F5T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD25485F5T is usually 5 days.
3.What payment methods are accepted for CSD25485F5T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD25485F5T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD25485F5T?
CSD25485F5T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD25485F5T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD25485F5T?
For technical support, including CSD25485F5T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD25485F5T requirements.
6.How does Aetrix verify that CSD25485F5T is sourced from the original manufacturer or authorized distributors?
All CSD25485F5T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD25485F5T meets industry standards.
7.What is the process for return or replacement of CSD25485F5T?
All CSD25485F5T units undergo pre-shipment inspection (PSI). If there is an issue with CSD25485F5T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD25485F5T part is unused and in its original packaging.
Return procedure for CSD25485F5T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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