Infineon Technologies DF11MR12W1M1B11BOMA1

Overview

DF11MR12W1M1B11BOMA1 from Infineon is a 1200 V, 50 A nominal CoolSiC™ Trench MOSFET-based EasyPACK™ power module integrating a boost diode, two bypass diodes, two inverse-polarity protection diodes, and an NTC thermistor - all in a single PressFIT-mountable package for high-efficiency solar inverters. It delivers low R_DS(on) (29.5 mΩ typ), low stray inductance (10 nH), and integrated temperature sensing for thermal management.

For engineers reviewing the DF11MR12W1M1B11BOMA1 datasheet, DF11MR12W1M1B11BOMA1 pinout, DF11MR12W1M1B11BOMA1 application, or DF11MR12W1M1B11BOMA1 equivalent, key selection criteria include its 1200 V blocking capability, dual-diode topology for anti-parallel conduction, PressFIT interconnect reliability, and NTC-based junction temperature monitoring in high-power photovoltaic systems.

Technical Context

This module implements a half-bridge configuration with a SiC MOSFET and complementary boost diode, plus redundant bypass and polarity-protection diodes for fault-tolerant DC-link operation. Its gate drive requires ±5 V / +15 V logic with internal 2.0 Ω gate resistor and supports fast switching (t_on = 10 ns, t_off = 43.5 ns) under 600 V bus conditions.

Thermal design leverages separate R_thJH values per device: 1.12 K/W (MOSFET), 1.08 K/W (boost diode), and 1.37 K/W (bypass/protect diodes), enabling independent thermal modeling. The integrated NTC (R₂₅ = 5.0 kΩ, B_25/100 = 3433 K) provides linearizable temperature feedback across –40 °C to 150 °C operating range.

Key Specifications

Pinout & Package

DF11MR12W1M1B11BOMA1 uses the EasyPACK™ 2B package (140 mm × 90 mm × 17 mm) with PressFIT solderless terminals and integrated mounting clamps. Thermal interface is optimized for direct heatsink contact via copper baseplate.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC power module applications.

Compared with FF600R12ME4 and IMZ120R030M1H, DF11MR12W1M1B11BOMA1 uniquely combines system-level integration (multi-diode redundancy, NTC, PressFIT), ultra-low stray inductance, and certified solar-grade reliability - reducing BOM count by 7 components and qualification effort by 6+ months.

Availability

DF11MR12W1M1B11BOMA1 is available at Aetrix Electronics and suitable for solar string inverters, bi-directional energy storage converters, EV DC fast chargers, and industrial UPS rectifiers requiring stable component supply and long-term lifecycle support.

Supply support for DF11MR12W1M1B11BOMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This part belongs to the EasyPACK™ family of power modules designed specifically for high-efficiency, high-reliability photovoltaic and energy storage applications - emphasizing integration, thermal robustness, and grid-code compliance.

FAQ

What gate drive voltage is required for reliable operation?

DF11MR12W1M1B11BOMA1 requires a gate drive of –5 V (turn-off) and +15 V (turn-on) referenced to source. Using ±10 V or wider swings risks accelerated gate oxide degradation. Application Note AN 2018-09 specifies minimum external gate resistor values (≥1.0 Ω) to limit dV/dt-induced false triggering and ensure safe turn-on/turn-off timing.

How is thermal monitoring implemented with the integrated NTC?

The NTC (R₂₅ = 5.0 kΩ, B_25/100 = 3433 K) connects between pins P8 and P9. A standard 5 V supply with 10 kΩ pull-up yields ~2.5 V at 25 °C; voltage division and Steinhart-Hart linearization provide junction temperature accuracy within ±1.8 °C from –40 °C to 150 °C without calibration.

Can this module replace discrete Si IGBTs in existing solar inverter designs?

Yes - but requires PCB redesign to accommodate the 140 mm × 90 mm EasyPACK™ 2B footprint and PressFIT insertion tooling. Gate drive timing must be adjusted for faster switching (t_on/t_off ≈ 10/44 ns vs. ~100/300 ns for IGBTs), and snubber networks may be reduced or eliminated due to 10 nH stray inductance.

What safety certifications apply to the internal isolation structure?

The module meets IEC 61140 basic insulation requirements with 3.0 kV_RMS/1 min isolation test voltage, CTI > 200, and RTI_Elec = 140 °C. It is qualified per UL 62368-1 and EN 62109-1 for use in transformerless PV inverters up to 1000 V DC, including creepage (11.5 mm) and clearance (10.0 mm) distances to heatsink.