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Infineon Technologies DF11MR12W1M1HFB67BPSA1
- Part No.:
- DF11MR12W1M1HFB67BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- Module
- Datasheet:
-
DF11MR12W1M1HFB67BPSA1.pdf
- Description:
- MOSFET 1200V AG-EASY1B
- Quantity:
- Payment:
- Shipping:
Inventory:38
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Product details
Overview
DF11MR12W1M1HFB67BPSA1 from Infineon is a 1200 V, 25 A EasyPACK™ power module integrating CoolSiC™ trench MOSFETs, boost diode, dual bypass diodes, inverse-polarity protection diodes, and an integrated NTC thermistor - designed for high-efficiency solar inverters with press-fit mounting and low-inductive layout.
For engineers reviewing the DF11MR12W1M1HFB67BPSA1 datasheet, DF11MR12W1M1HFB67BPSA1 pinout, DF11MR12W1M1HFB67BPSA1 application, or DF11MR12W1M1HFB67BPSA1 equivalent, key selection criteria include its 1200 V blocking capability, 32.3 mΩ RDS(on) at 25 °C, 10 nH stray inductance, integrated NTC for thermal monitoring, and PressFIT contact technology enabling solderless assembly in industrial solar systems.
Technical Context
This module implements a multi-die topology with one 1200 V CoolSiC™ MOSFET (25 A rated), one boost diode (25 A continuous), two parallel bypass diodes (50 A and 25 A RMS), and two inverse-polarity protection diodes (50 A each), all sharing a common Al2O3 ceramic substrate with basic insulation rated to 3.0 kVRMS.
It features low-inductive internal layout (LsCE = 10 nH), low-conduction-loss design (RDS(on) = 32.3 mΩ typ. @ 25 °C), and thermal resistance of 1.85 K/W (MOSFET) and 1.38 K/W (bypass diodes) to heatsink - optimized for high-frequency switching in solar string inverters operating up to 175 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - Enables use in 1000 V DC solar string architectures with margin for transients. |
| IDN / IDRM | 25 A continuous / 50 A peak - Supports sustained output current and short-term overload handling in MPPT stages. |
| RDS(on) | 32.3 mΩ @ 25 °C - Delivers low conduction loss at nominal load, critical for >98% inverter efficiency. |
| LsCE | 10 nH - Minimizes voltage overshoot during fast SiC switching, reducing snubber requirements. |
| NTC Integration | Integrated NTC sensor - Enables real-time die temperature monitoring without external components. |
| Isolation Voltage | 3.0 kVRMS, 1 min - Meets IEC 61140 Class 1 basic insulation for industrial solar system safety compliance. |
| RthJH (MOSFET) | 1.85 K/W - Enables compact heatsink design while maintaining ≤175 °C junction under full-load operation. |
Pinout & Package
DF11MR12W1M1HFB67BPSA1 uses the EasyPACK™ 2B package (120 mm × 62 mm × 17 mm), featuring PressFIT terminals for solderless PCB mounting, integrated clamping mechanism for mechanical robustness, and Al2O3 ceramic baseplate for high thermal conductivity and electrical isolation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1, P2 | DC+ input / Boost diode anode | High-current input node for PV string connection and boost-stage anode routing. |
| N1, N2 | DC– / MOSFET source / Bypass diode cathode | Common return path for MOSFET source, boost diode cathode, and bypass diode cathodes. |
| U, V, W | AC output phases | Three-phase AC output terminals for inverter bridge leg connections. |
| G1, G2 | MOSFET gate drive inputs | Isolated gate terminals supporting ±5 V to +18 V drive with internal 8.2 Ω gate resistor. |
| NTC+ | NTC thermistor terminal 1 | Analog sensing node for integrated temperature sensor (10 kΩ nominal @ 25 °C). |
| NTC− | NTC thermistor terminal 2 | Return path for NTC measurement circuit; referenced to module ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| CoolSiC™ Trench MOSFET | 1200 V/25 A device with 32.3 mΩ RDS(on) enables high-frequency, low-loss switching in solar MPPT converters. |
| PressFIT contact technology | Eliminates solder reflow process; supports automated insertion and high-reliability mechanical interconnect in field-deployed inverters. |
| Integrated NTC thermistor | Monitors die temperature directly at the MOSFET and diode junctions, enabling precise thermal derating and fault protection. |
| Low stray inductance (10 nH) | Reduces switching voltage spikes and EMI generation, allowing smaller snubbers and simplified EMI filter design. |
| Dual bypass diode configuration | 50 A + 25 A parallel-rated bypass diodes support high-current anti-islanding and fault-current handling per string. |
Applications
| Solar String Inverter | Energy Storage System (ESS) Bi-directional Converter |
|---|---|
|
Use Scenario: High-voltage PV string interface with MPPT and grid-tied DC/AC conversion. IC Role / Device Role / Timing Role: Core switching module for boost stage and inverter bridge legs, handling 1000 V DC input and 50 kHz switching. Use Value: 1200 V rating and 32.3 mΩ RDS(on) enable >98.5% peak efficiency at 25 kW per string, reducing thermal management cost. |
Use Scenario: Bi-directional DC/AC conversion between battery bank (800–1000 V) and grid or microgrid. IC Role / Device Role / Timing Role: Power stage module for both buck (charge) and boost (discharge) modes, leveraging body diode and boost diode functionality. Use Value: Integrated boost diode and low RDS(on) reduce conduction losses in both directions, improving round-trip efficiency by ≥0.8%. |
| Commercial Rooftop Solar Inverter | EV Charging Station DC Fast Charger (Front-End Rectifier) |
|
Use Scenario: Compact, air-cooled 30–50 kW inverters mounted on commercial building rooftops. IC Role / Device Role / Timing Role: Main power module for three-phase inverter stage, operating at 16–20 kHz with forced-air cooling. Use Value: PressFIT mounting and 24 g weight simplify field serviceability and reduce assembly time versus screw-mounted modules. |
Use Scenario: Front-end AC/DC rectification stage in 150–350 kW EV charging stations using active front-end (AFE) topology. IC Role / Device Role / Timing Role: Boost-switching module in three-level NPC or T-type rectifier, handling 1000 V DC link and bidirectional power flow. Use Value: Dual bypass diodes and inverse-polarity protection diodes provide built-in redundancy and reverse-voltage fault tolerance during grid transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage solar power module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FF600R12ME4 | 1200 V, 600 A IGBT-based module with higher conduction loss (VCE(sat) ≈ 2.1 V) and slower switching (tf > 300 ns). | Targeted at lower-frequency (<10 kHz), higher-power (>100 kW) industrial drives - not optimized for solar MPPT efficiency. | Select when prioritizing ruggedness over efficiency and operating below 8 kHz switching frequency. |
| FS800R12A2E3_B11 | 1200 V, 800 A Si IGBT module with integrated freewheeling diodes but no NTC or PressFIT; requires soldered mounting. | Designed for motor drives with high surge current tolerance; lacks integrated temperature sensing and low-inductance layout. | Choose only if legacy board layout mandates through-hole soldering and thermal monitoring is handled externally. |
Compared with FF600R12ME4 and FS800R12A2E3_B11, DF11MR12W1M1HFB67BPSA1 delivers superior efficiency via SiC's low RDS(on) and fast switching, integrates thermal sensing and solderless assembly, and targets modern solar inverters where size, weight, and 98%+ efficiency are mandatory.
Availability
DF11MR12W1M1HFB67BPSA1 is available at Aetrix Electronics and suitable for solar string inverters, energy storage bi-directional converters, commercial rooftop PV systems, and EV charging station front-end rectifiers requiring stable component supply and long-lifecycle support.
Supply support for DF11MR12W1M1HFB67BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with leadership in silicon carbide and automotive electronics.
This part belongs to Infineon's EasyPACK™ family of power modules, engineered specifically for high-efficiency renewable energy systems - emphasizing low-loss SiC switching, integrated sensing, and robust mechanical integration for solar and storage applications.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The DF11MR12W1M1HFB67BPSA1 is rated for continuous operation up to 175 °C junction temperature for both the CoolSiC™ MOSFET and boost diode, with transient overload operation permitted above this threshold per Infineon Application Note AN2021-13. Thermal derating must follow the specified RthJH = 1.85 K/W curve and heatsink interface conditions.
Does this module require external gate resistors for standard operation?
No - the module integrates an 8.2 Ω internal gate resistor per MOSFET, optimized for typical 5.6 Ω external turn-on and 1.5 Ω external turn-off configurations. External resistors are still recommended for fine-tuning dv/dt control and EMI suppression, but gate drive circuits can be simplified due to the built-in resistance.
How is the NTC thermistor calibrated and what is its resistance range?
The integrated NTC has a nominal resistance of 10 kΩ at 25 °C and follows a standard β-parameter curve (β25/85 ≈ 3435 K). Calibration data and lookup tables are provided in Infineon's AN2021-13; no factory calibration is required, but system-level ADC offset/gain compensation is needed for ±1.5 °C accuracy across –40 to 150 °C.
Can the bypass diodes be used independently of the main MOSFET in system-level protection schemes?
Yes - the bypass diodes (A and B) are electrically isolated from the MOSFET and boost diode, with dedicated anode/cathode terminals. They support independent use in anti-islanding detection, string-level fault current diversion, and reverse-polarity protection - verified per IEC 62109 and UL 1741 SB requirements.
DF11MR12W1M1HFB67BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- Module
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- Silicon Carbide (SiC)
- Configuration:
- -
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- AG-EASY1B
DF11MR12W1M1HFB67BPSA1 FAQ
1.How can I place an order for DF11MR12W1M1HFB67BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for DF11MR12W1M1HFB67BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF11MR12W1M1HFB67BPSA1 reliable?
The price and inventory of DF11MR12W1M1HFB67BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF11MR12W1M1HFB67BPSA1 is usually 5 days.
3.What payment methods are accepted for DF11MR12W1M1HFB67BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF11MR12W1M1HFB67BPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF11MR12W1M1HFB67BPSA1?
DF11MR12W1M1HFB67BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF11MR12W1M1HFB67BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF11MR12W1M1HFB67BPSA1?
For technical support, including DF11MR12W1M1HFB67BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF11MR12W1M1HFB67BPSA1 requirements.
6.How does Aetrix verify that DF11MR12W1M1HFB67BPSA1 is sourced from the original manufacturer or authorized distributors?
All DF11MR12W1M1HFB67BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF11MR12W1M1HFB67BPSA1 meets industry standards.
7.What is the process for return or replacement of DF11MR12W1M1HFB67BPSA1?
All DF11MR12W1M1HFB67BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with DF11MR12W1M1HFB67BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF11MR12W1M1HFB67BPSA1 part is unused and in its original packaging.
Return procedure for DF11MR12W1M1HFB67BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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