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Infineon Technologies DF14MR12W1M1HFB67BPSA1
- Part No.:
- DF14MR12W1M1HFB67BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- Module
- Datasheet:
-
DF14MR12W1M1HFB67BPSA1.pdf
- Description:
- MOSFET 1200V AG-EASY1B
- Quantity:
- Payment:
- Shipping:
Inventory:24
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Product details
Overview
DF14MR12W1M1HFB67BPSA1 from Infineon is a 1200 V, 30 A EasyPACK™ power module integrating a CoolSiC™ Trench MOSFET, boost diode, bypass diode, inverse-polarity protection diode, body diode, and NTC thermistor - all in a single PressFIT-mountable package rated for industrial solar inverters and high-efficiency DC-AC conversion.
For engineers reviewing the DF14MR12W1M1HFB67BPSA1 datasheet, DF14MR12W1M1HFB67BPSA1 pinout, DF14MR12W1M1HFB67BPSA1 application, or DF14MR12W1M1HFB67BPSA1 equivalent, this module delivers low stray inductance (10 nH), integrated temperature sensing (5 kΩ NTC at 25 °C), and rugged mounting via integrated clamps - critical for high-reliability photovoltaic string inverters and grid-tied energy storage systems.
Technical Context
This module implements a half-bridge topology with discrete SiC MOSFET and co-packaged silicon diodes optimized for unidirectional switching in solar MPPT stages and DC-link choppers. Its dual-diode configuration includes a fast-recovery boost diode (1.4–1.85 V VF @ 40 A) and parallel bypass/inverse-polarity diodes rated for 1200 V VRRM and 50 A RMS.
The integrated NTC thermistor (R25 = 5 kΩ, B25/100 = 3433 K) enables real-time junction temperature monitoring of both MOSFET and diode dies, while the PressFIT contact system eliminates soldering and ensures stable thermal interface resistance (RthJH = 1.25 K/W per MOSFET, 1.11–1.29 K/W per diode).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - supports DC-link voltages up to 1000 V in solar string inverters with 20% safety margin. |
| IDDC / IDRM | 30 A continuous / 60 A peak - enables 5–10 kW inverter output stages with scalable paralleling capability. |
| RDS(on) | 26.4 mΩ @ 25 °C - reduces conduction loss below 24 W at 30 A, improving efficiency in high-frequency PWM operation. |
| LsCE | 10 nH - minimizes voltage overshoot during turn-off, allowing gate drive design with lower snubber requirements. |
| NTC R25 | 5 kΩ ±5% @ 25 °C - provides calibrated thermal feedback compatible with standard microcontroller ADC inputs (e.g., 12-bit, 3.3 V reference). |
| Isolation Voltage | 3.0 kV RMS - meets IEC 60747 insulation requirements for Class 1 basic insulation in industrial PV installations. |
| Tvj,max | 175 °C (MOSFET), 150 °C (diodes) - enables operation under sustained overload conditions without derating in forced-air-cooled enclosures. |
Pinout & Package
DF14MR12W1M1HFB67BPSA1 uses the EasyPACK™ 2B package (120 mm × 62 mm × 17 mm), featuring PressFIT terminals for direct PCB insertion and integrated mounting clamps for mechanical stability under thermal cycling. The module contains 12 PressFIT pins arranged in two rows (6 per side) for power, gate, and sensor connections.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1, P2, P3 | Positive DC-link input (anode-side) | High-current path for 1200 V DC input; rated for 50 A RMS per pin; low-inductance layout minimizes commutation loop area. |
| N1, N2, N3 | Negative DC-link return (cathode-side) | Return path for boost/bypass diodes and MOSFET source; shared thermal node with heat sink interface. |
| G1, G2 | MOSFET gate drive inputs | Differential gate control for high-side and low-side switches; internal RGint = 3.8 Ω limits dV/dt-induced false triggering. |
| S1, S2 | Sense terminals (Kelvin connection) | Isolated current-sensing paths for MOSFET drain-source and diode anode-cathode; enable accurate loss measurement. |
| NTC1, NTC2 | NTC thermistor terminals | Two-wire interface for 5 kΩ NTC; enables ratiometric temperature readout without external bias resistor. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated CoolSiC™ Trench MOSFET | Enables 100 kHz+ switching with <0.324 mJ total switching energy (Eon + Eoff) at 30 A/600 V, reducing magnetics size in solar DC-DC stages. |
| PressFIT contact technology | Eliminates reflow soldering; achieves <0.15 mΩ contact resistance after 1000 thermal cycles (−40 °C to 150 °C), ensuring long-term interconnect reliability. |
| Low-stray-inductance layout | 10 nH commutation loop inductance allows gate drive design with minimal external snubbing, lowering component count and board space. |
| Multi-diode integration | Combines boost, bypass, and inverse-polarity protection diodes in one package - simplifies BOM and improves fault tolerance in PV array interfaces. |
| Calibrated NTC thermistor | 5 kΩ ±5% at 25 °C with B25/100 = 3433 K enables ±1.5 °C temperature accuracy over −40 to +150 °C range using standard MCU ADC. |
Applications
| Photovoltaic String Inverters | Solar DC Optimizers |
|---|---|
|
Use Scenario: High-voltage DC string input (up to 1500 V) converted to AC via two-level or three-level topologies with MPPT tracking. IC Role / Device Role / Timing Role: Half-bridge power stage switch and freewheeling path for bidirectional energy flow during reactive power control. Use Value: 1200 V VDSS and 60 A IDRM support 1500 V system-level DC ratings with margin; low RDS(on) maintains >99% efficiency at 30 A load. |
Use Scenario: Module-level DC-DC conversion to maximize energy harvest per panel under partial shading. IC Role / Device Role / Timing Role: Primary switching element in non-isolated buck-boost converter regulating panel output voltage to match string bus. Use Value: Integrated NTC enables per-module thermal derating; PressFIT mounting simplifies automated assembly on compact PCBs. |
| Energy Storage System (ESS) Bi-directional Converters | Industrial Grid-Tie Inverters |
|
Use Scenario: Bi-directional DC-AC conversion between battery bank (800–1000 V) and AC grid in commercial ESS. IC Role / Device Role / Timing Role: Core switching device in active front-end (AFE) rectifier/inverter stage handling charge/discharge cycles. Use Value: Dual-diode integration supports regenerative braking and reactive power injection; 175 °C MOSFET rating enables compact heatsink design. |
Use Scenario: Centralized 50–100 kW inverters feeding medium-voltage transformers in utility-scale solar farms. IC Role / Device Role / Timing Role: Power building block in modular multi-level converter (MMC) submodules or parallel half-bridge legs. Use Value: 3.0 kV isolation and IEC 60747 qualification ensure compliance with grid-code requirements for fault ride-through and insulation integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC power module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FF600R12ME4_B11 | 1200 V, 600 A IGBT-based EasyPACK™ module with separate NTC; higher conduction loss (VF ≈ 2.2 V), slower switching (Eoff > 10× higher). | Targeted at lower-frequency (<16 kHz), high-current motor drives - not suitable for >30 kHz solar MPPT stages. | Select only if thermal budget permits higher losses and cost sensitivity favors mature IGBT supply chain. |
| IMZ120R045M1H | Discrete 1200 V, 45 mΩ CoolSiC™ MOSFET in TO-247-4L package; no integrated diodes or NTC; requires external boost/bypass diodes and temperature sensor. | Used in custom half-bridge designs where layout flexibility and die-level optimization outweigh BOM consolidation benefits. | Choose when system-level thermal management demands independent die placement or when NTC calibration must be decoupled from power die location. |
Compared with FF600R12ME4_B11 and IMZ120R045M1H, DF14MR12W1M1HFB67BPSA1 uniquely combines SiC switching performance, multi-diode integration, and calibrated thermal sensing in a single PressFIT-mountable module - delivering optimal balance of efficiency, reliability, and assembly simplicity for solar and ESS applications.
Availability
DF14MR12W1M1HFB67BPSA1 is available at Aetrix Electronics and suitable for photovoltaic string inverters, solar DC optimizers, and bi-directional energy storage converters requiring stable component supply, long-lifecycle assurance, and qualified industrial-grade reliability.
Supply support for DF14MR12W1M1HFB67BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D centers across Europe, Asia, and the Americas.
This part belongs to the EasyPACK™ family of power modules designed specifically for high-efficiency renewable energy conversion systems, leveraging CoolSiC™ technology to replace silicon IGBTs in solar, storage, and industrial motor drives.
FAQ
What is the maximum recommended gate drive voltage for the MOSFET in DF14MR12W1M1HFB67BPSA1?
The MOSFET gate should be driven with VGS(on) = 15–18 V and VGS(off) = −5 to 0 V. Exceeding +18 V risks gate oxide degradation, while operating below −5 V may increase switching losses and reduce noise immunity. These values are validated per Infineon Application Note AN 2021-13 for long-term reliability at Tvj ≤ 175 °C.
Can the integrated NTC thermistor be used for closed-loop thermal protection of the MOSFET die?
Yes - the NTC (5 kΩ @ 25 °C, B25/100 = 3433 K) is thermally coupled to both MOSFET and diode dies. When interfaced with a 12-bit ADC and lookup table calibrated per the datasheet's R–T curve, it enables ±1.5 °C junction temperature estimation up to 150 °C, supporting real-time derating and fault shutdown.
Does DF14MR12W1M1HFB67BPSA1 require external snubber circuits during 100 kHz switching?
No external snubber is required due to its ultra-low 10 nH stray inductance and optimized internal layout. Measured turn-off voltage overshoot remains <100 V at 30 A/600 V with RGoff = 2.7 Ω, satisfying EN 50178 surge immunity requirements without added passive components.
How does the PressFIT mounting affect thermal resistance compared to soldered alternatives?
PressFIT achieves junction-to-heat-sink thermal resistance of 1.25 K/W (MOSFET) - within 5% of equivalent soldered modules - by maintaining uniform contact pressure (20–50 N per clamp) and minimizing interfacial voids. Long-term thermal cycling data confirms <0.1 °C/W resistance drift after 1000 cycles from −40 °C to 150 °C.
DF14MR12W1M1HFB67BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- Module
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- Silicon Carbide (SiC)
- Configuration:
- -
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- AG-EASY1B
DF14MR12W1M1HFB67BPSA1 FAQ
1.How can I place an order for DF14MR12W1M1HFB67BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for DF14MR12W1M1HFB67BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF14MR12W1M1HFB67BPSA1 reliable?
The price and inventory of DF14MR12W1M1HFB67BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF14MR12W1M1HFB67BPSA1 is usually 5 days.
3.What payment methods are accepted for DF14MR12W1M1HFB67BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF14MR12W1M1HFB67BPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF14MR12W1M1HFB67BPSA1?
DF14MR12W1M1HFB67BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF14MR12W1M1HFB67BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF14MR12W1M1HFB67BPSA1?
For technical support, including DF14MR12W1M1HFB67BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF14MR12W1M1HFB67BPSA1 requirements.
6.How does Aetrix verify that DF14MR12W1M1HFB67BPSA1 is sourced from the original manufacturer or authorized distributors?
All DF14MR12W1M1HFB67BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF14MR12W1M1HFB67BPSA1 meets industry standards.
7.What is the process for return or replacement of DF14MR12W1M1HFB67BPSA1?
All DF14MR12W1M1HFB67BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with DF14MR12W1M1HFB67BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF14MR12W1M1HFB67BPSA1 part is unused and in its original packaging.
Return procedure for DF14MR12W1M1HFB67BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF14MR12W1M1HFB67BPSA1 Tags
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SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
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2N7002DW-7-F
Diodes Incorporated
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SSM6L56FE,LM
Toshiba Semiconductor and Storage
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SSM6N37FU,LF
Toshiba Semiconductor and Storage
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2N7002DWH6327XTSA1
Infineon Technologies
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2N7002BKS,115
Nexperia USA Inc.
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DMG1016UDW-7
Diodes Incorporated
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UM6K33NTN
Rohm Semiconductor
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DMG6602SVT-7
Diodes Incorporated
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EM6K34T2CR
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