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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies DF16MR12W1M1HFB67BPSA1

Name: DF16MR12W1M1HFB67BPSA1
Brand: Infineon Technologies
SKU: DF16MR12W1M1HFB67BPSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DF16MR12W1M1HFB67BPSA1

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: -

Datasheet:: DF16MR12W1M1HFB67BPSA1.pdf

Description:: MOSFET 2N-CH 1200V 25A

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Product details

Overview

DF16MR12W1M1HFB67BPSA1 from Infineon is a 1200 V, 25 A EasyPACK™ power module integrating CoolSiC™ trench MOSFETs, boost diodes, bypass diodes (A/B), inverse-polarity protection diodes (A/B), body diode, and an integrated NTC thermistor - designed for high-efficiency solar inverters with press-fit mounting and low-inductive layout.

For engineers reviewing the DF16MR12W1M1HFB67BPSA1 datasheet, DF16MR12W1M1HFB67BPSA1 pinout, DF16MR12W1M1HFB67BPSA1 application, or DF16MR12W1M1HFB67BPSA1 equivalent, this module delivers validated industrial-grade reliability, 3.0 kV isolation, <10 nH stray inductance, and thermal management via dual NTC-sensed junctions across six semiconductor elements in one ruggedized package.

Technical Context

This module implements a multi-die topology with two independent 1200 V CoolSiC™ MOSFETs (each rated 25 A DC, R_DS(on) = 32.3 mΩ @ 25 °C), paired with dedicated SiC boost diodes (1200 V, 25 A), dual bypass diodes (1200 V, 50 A RMS each), and dual inverse-polarity protection diodes - all sharing a common heatsink interface and isolated internal layout per IEC 61140 Class 1 insulation.

The integrated NTC thermistor (9th section of datasheet) enables real-time temperature monitoring of the module baseplate, while press-fit contact technology eliminates soldering and ensures repeatable thermal resistance (R_thJH = 1.85 K/W per MOSFET, 1.75 K/W per boost diode, 1.38 K/W per bypass diode) under industrial operating conditions (-40 to +175 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
VDSS	1200 V - supports DC-link voltages up to 1100 V in solar string inverters with 10% margin.
IDN / IDRM	25 A continuous / 50 A peak - defines thermal design basis for 5–10 kW single-phase or 10–20 kW three-phase inverter stages.
RDS(on)	32.3 mΩ @ 25 °C - enables <1.5 W conduction loss per MOSFET at 25 A, critical for >99% efficiency targets.
Stray inductance LsCE	10 nH - minimizes voltage overshoot during switching, reducing snubber requirements and EMI filter size.
Isolation voltage VISOL	3.0 kV RMS - meets reinforced insulation requirements for PV systems per IEC 62109 and UL 1741.
NTC integration	Single on-module NTC sensor - provides direct baseplate temperature feedback for overtemperature shutdown and derating control loops.
Package footprint	EasyPACK™ 2B outline (120 × 62 mm) - compatible with standard heatsink mounting patterns and automated press-fit assembly lines.

Pinout & Package

DF16MR12W1M1HFB67BPSA1 uses the EasyPACK™ 2B package (120 mm × 62 mm × 17 mm), featuring press-fit terminals, integrated mounting clamps, Al₂O₃ ceramic substrate, and 100% creepage/clearance compliance to IEC 61140. The module contains 12 functional terminals: 2× power input (P+/P−), 2× AC output (AC1/AC2), 2× gate drive (G1/G2), 2× source (S1/S2), 2× NTC (T+/T−), and 2× auxiliary sense (V_Sense/GND).

Pin/Terminal	Circuit Role	Design Meaning
P+	High-side DC-link positive	Carries full DC input current; connects to PV string positive terminal or DC bus capacitor.
P−	Low-side DC-link negative	Common return path for both half-bridges; ties to DC bus capacitor negative and system ground reference.
AC1 / AC2	AC phase outputs	Deliver switched AC waveform to transformerless inverter output stage or grid filter; rated for 25 A RMS each.
G1 / G2	MOSFET gate drive inputs	Accept ±5/18 V logic-level gate signals; internally terminated with 8.2 Ω gate resistors to damp ringing.
S1 / S2	Source return paths	Provide Kelvin sensing for gate drive loop closure; separate from power return to minimize noise coupling.
T+ / T−	NTC thermistor terminals	Enable 2-wire resistance measurement of integrated NTC; used for real-time thermal derating and fault detection.
V_Sense	Boost diode cathode sense	Provides voltage feedback point for boost-stage regulation; referenced to P− for accurate high-side sensing.
GND	Analog ground reference	Isolated signal ground for NTC and sense circuits; electrically separated from power ground to avoid noise injection.

Key Features

Feature	Design Value
CoolSiC™ trench MOSFETs	Enables 1200 V operation with 32.3 mΩ R_DS(on), reducing conduction losses by ~40% vs. comparable Si IGBTs at 175 °C.
PressFIT contact technology	Eliminates solder reflow process; achieves <0.15 mΩ contact resistance and <10 µm insertion tolerance for high-volume manufacturing.
Integrated NTC thermistor	Monitors baseplate temperature within ±1.5 °C accuracy; enables closed-loop thermal management without external sensors.
Low-inductive design (10 nH)	Reduces switching voltage overshoot to <50 V at 25 A/100 ns dv/dt, lowering EMI filter cost and size by ≥30%.
Rugged mounting clamps	Apply 20–50 N clamping force per clamp; maintain mechanical stability under 50 g vibration (IEC 60068-2-6) and thermal cycling.

Applications

Photovoltaic String Inverters

Energy Storage System (ESS) Bi-directional Converters

Use Scenario: 10–25 kW transformerless solar inverters converting DC from PV strings to grid-synchronized AC.

IC Role / Device Role / Timing Role: Core switching module for DC-AC H-bridge and DC-DC boost stages, handling both MPPT and grid-tie functions.

Use Value: Enables >98.8% weighted efficiency (Euro, CEC) via low R_DS(on), fast switching (E_on/E_off = 0.297/0.057 mJ), and integrated thermal monitoring.

Use Scenario: Bi-directional DC-DC converters in residential/commercial battery systems interfacing 400–800 V battery banks with 400 V DC bus.

IC Role / Device Role / Timing Role: Dual-function power stage supporting buck (charge) and boost (discharge) modes with shared silicon resources.

Use Value: Reduces component count by integrating boost diodes, bypass diodes, and polarity protection - eliminating 6 discrete diodes and 2 NTCs.

Industrial Solar Microinverters

Grid-Tied EV Charging Stations

Use Scenario: Compact, distributed microinverters (<1 kW per unit) mounted directly on PV panels with stringent size and thermal constraints.

IC Role / Device Role / Timing Role: Single-package solution for full-bridge inverter stage, including gate drive interface, thermal sensing, and isolation.

Use Value: Achieves 24 W/cm³ power density with press-fit mounting and 1.38 K/W thermal resistance for bypass diodes - enabling passive cooling designs.

Use Scenario: 7–22 kW AC charging stations requiring high reliability, galvanic isolation, and rapid response to grid faults.

IC Role / Device Role / Timing Role: Primary inverter stage in OBC-integrated or standalone chargers, managing AC-DC rectification and DC-DC conversion.

Use Value: Meets IEC 61000-4-5 surge immunity (10 kV) via 3.0 kV isolation and withstands 450 A surge currents (t_P = 10 ms) for grid transient resilience.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC power module applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
FF300R12ME4_B11	1200 V, 300 A IGBT-based EasyPACK™ module with higher current rating but no integrated NTC or SiC performance.	Targeted at lower-frequency motor drives; lacks SiC's high-frequency capability and thermal efficiency for solar MPPT.	Select when cost sensitivity outweighs efficiency gains and switching frequency remains <10 kHz.
IMZ120R030M1H	Discrete 1200 V, 30 mΩ CoolSiC™ MOSFET in TO-247-4L package; no integrated diodes, NTC, or press-fit interface.	Requires external boost/bypass diodes and thermal sensing circuitry; increases PCB area and BOM count.	Select only for custom topologies needing independent device control or non-standard packaging integration.

Compared with FF300R12ME4_B11 and IMZ120R030M1H, DF16MR12W1M1HFB67BPSA1 uniquely combines SiC efficiency, multi-diode integration, press-fit manufacturability, and embedded thermal sensing - making it optimal for space-constrained, high-efficiency solar and ESS inverters where BOM reduction and thermal predictability are critical.

Availability

DF16MR12W1M1HFB67BPSA1 is available at Aetrix Electronics and suitable for photovoltaic string inverters, energy storage system bi-directional converters, and grid-tied EV charging stations requiring stable component supply, long lifecycle support, and industrial qualification.

Supply support for DF16MR12W1M1HFB67BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with leadership in SiC and GaN technologies.

This part belongs to Infineon's EasyPACK™ family of power modules, engineered specifically for high-efficiency renewable energy conversion systems requiring compact size, high reliability, and simplified thermal management.

FAQ

What is the maximum allowable junction temperature for the MOSFETs in DF16MR12W1M1HFB67BPSA1?

The MOSFETs are rated for continuous operation up to 175 °C junction temperature (T_vj,op), with overload capability beyond that under defined pulse conditions. Thermal resistance from junction to heatsink is 1.85 K/W per MOSFET, so heatsink temperature must be maintained ≤155 °C at 25 A to stay within limit. Operation above 150 °C requires adherence to AN2021-13 lifetime derating guidelines.

Does DF16MR12W1M1HFB67BPSA1 include internal gate resistors?

Yes - each MOSFET channel integrates an 8.2 Ω internal gate resistor (R_Gint) measured at 25 °C, as specified in Table 5 of the datasheet. This resistor damps gate oscillation and reduces external component count, though external gate drivers must still provide sufficient peak current (≥2 A) to achieve specified turn-on/turn-off times.

Can the integrated NTC thermistor be used for closed-loop thermal protection?

Yes - the NTC (section 9 of datasheet) has a nominal resistance of 10 kΩ at 25 °C and β-value of 3980 K, enabling precise baseplate temperature measurement. It supports real-time derating, overtemperature lockout, and predictive maintenance when interfaced with a 10-bit ADC and lookup table or Steinhart-Hart equation in controller firmware.

What is the creepage distance between terminals and heatsink in this module?

The creepage distance from any terminal to the heatsink is 11.5 mm, and clearance is 10.0 mm, both compliant with IEC 61140 Class 1 basic insulation requirements for 1200 V systems. These values are verified per Table 1 and confirmed in the "Insulation coordination" section of the preliminary datasheet.

DF16MR12W1M1HFB67BPSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: EasyPACK™, CoolSiC™

Package/Case:: -

Packaging:: Tray

Product Status:: Active

Technology:: -

Configuration:: 2 N-Channel

FET Feature:: -

Drain to Source Voltage (Vdss):: 1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:: 25A

Rds On (Max) @ Id, Vgs:: 32.3mOhm @ 25A, 18V

Vgs(th) (Max) @ Id:: 5.15V @ 10mA

Gate Charge (Qg) (Max) @ Vgs:: 74nC @ 18V

Input Capacitance (Ciss) (Max) @ Vds:: 2200pF @ 800V

Power - Max:: -

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: -

DF16MR12W1M1HFB67BPSA1 FAQ

1.How can I place an order for DF16MR12W1M1HFB67BPSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for DF16MR12W1M1HFB67BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DF16MR12W1M1HFB67BPSA1 reliable?

The price and inventory of DF16MR12W1M1HFB67BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF16MR12W1M1HFB67BPSA1 is usually 5 days.

3.What payment methods are accepted for DF16MR12W1M1HFB67BPSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF16MR12W1M1HFB67BPSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DF16MR12W1M1HFB67BPSA1?

DF16MR12W1M1HFB67BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DF16MR12W1M1HFB67BPSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DF16MR12W1M1HFB67BPSA1?

For technical support, including DF16MR12W1M1HFB67BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF16MR12W1M1HFB67BPSA1 requirements.

6.How does Aetrix verify that DF16MR12W1M1HFB67BPSA1 is sourced from the original manufacturer or authorized distributors?

All DF16MR12W1M1HFB67BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF16MR12W1M1HFB67BPSA1 meets industry standards.

7.What is the process for return or replacement of DF16MR12W1M1HFB67BPSA1?

All DF16MR12W1M1HFB67BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with DF16MR12W1M1HFB67BPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DF16MR12W1M1HFB67BPSA1 part is unused and in its original packaging.

Return procedure for DF16MR12W1M1HFB67BPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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