Infineon Technologies DF23MR12W1M1B11BOMA1

Overview

DF23MR12W1M1B11BOMA1 from Infineon is a 1200 V, 25 A EasyPACK™ power module integrating a CoolSiC™ Trench MOSFET, a boost Schottky diode (Gen 5), two bypass diodes, two inverse-polarity protection diodes, and an integrated NTC thermistor - all in a single PressFIT-mountable package for high-efficiency solar inverters. It delivers low switching losses (Eon = 0.227 mJ, Eoff = 0.045 mJ at 25 A/600 V), low stray inductance (10 nH), and rugged thermal performance (RthJH = 1.61 K/W per MOSFET).

For engineers reviewing the DF23MR12W1M1B11BOMA1 datasheet, DF23MR12W1M1B11BOMA1 pinout, DF23MR12W1M1B11BOMA1 application, or DF23MR12W1M1B11BOMA1 equivalent, this module supports high-reliability solar string inverters requiring 1200 V SiC-based power conversion, real-time temperature monitoring via integrated NTC, and low-inductance PressFIT interconnection without soldering.

Technical Context

This module implements a half-bridge topology with discrete SiC die co-packaged in a single ceramic substrate: one 1200 V/25 A CoolSiC™ MOSFET (RDS(on) = 59 mΩ typ. at 25°C), one 1200 V/20 A boost Schottky diode (VF = 1.75 V typ. at 20 A/125°C), plus redundant 1200 V/50 A bypass and polarity-protection diodes. All diodes share identical thermal resistance (RthJH = 1.37–1.38 K/W) and surge rating (IFSM = 450 A at 25°C).

The integrated NTC (R25 = 5.00 kΩ, B25/100 = 3433 K) enables precise junction temperature sensing, while the PressFIT contact system eliminates solder joint fatigue and supports >20 N clamp force per mounting point. Stray inductance is minimized to 10 nH for clean 600 V switching transients.

Key Specifications

Pinout & Package

DF23MR12W1M1B11BOMA1 uses the EasyPACK™ 2B package (12-pin PressFIT layout, 24 g mass, Al₂O₃ ceramic baseplate). Pin assignment follows Infineon's standardized EasyPACK™ 2B mechanical footprint with top-side gate/source/drain terminals and bottom-side PressFIT pins for heatsink interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC power module applications.

Compared with FS800R08A6P2B and FF600R12ME4, DF23MR12W1M1B11BOMA1 uniquely combines 1200 V SiC switching, integrated NTC, PressFIT mounting, and 10 nH stray inductance - making it the only drop-in solution for compact, high-efficiency solar string inverters requiring certified isolation and real-time thermal feedback.

Availability

DF23MR12W1M1B11BOMA1 is available at Aetrix Electronics and suitable for solar string inverters, energy storage bi-directional converters, commercial rooftop PV systems, and EV DC fast-charging stations requiring stable component supply across multi-year production cycles.

Supply support for DF23MR12W1M1B11BOMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to Infineon's EasyPACK™ family of press-fit power modules, designed specifically for high-reliability renewable energy systems requiring solder-free assembly, integrated sensing, and 1200 V SiC performance.

FAQ

What is the maximum allowable gate drive voltage for DF23MR12W1M1B11BOMA1?

The absolute maximum gate-source voltage is −10 V to +20 V, but Infineon specifies −5 V / +15 V as the recommended drive range to ensure long-term reliability and minimize threshold shift. Operating outside this window accelerates gate oxide degradation, especially at elevated junction temperatures (>125°C), and violates the design guidelines in Application Note AN 2018-09.

Does DF23MR12W1M1B11BOMA1 include internal gate resistors?

Yes - each MOSFET channel has an internal gate resistor of 4.0 Ω (typ.) measured at 25°C. This value is fixed and non-adjustable; external gate resistors must be added in series to fine-tune switching speed and dV/dt control. The internal resistor helps dampen parasitic oscillations but does not replace the need for optimized external RGon/RGoff networks.

Can the integrated NTC be used for both temperature monitoring and overtemperature shutdown?

Yes - the NTC (5.00 kΩ at 25°C, B25/100 = 3433 K) provides linearizable resistance-to-temperature response across −40°C to +150°C. When paired with a precision voltage divider and ADC, it enables real-time junction temperature estimation within ±2°C accuracy, supporting both dynamic derating and hardware-level shutdown triggers via comparator circuits.

What is the thermal resistance from junction to heatsink for the MOSFET and diodes?

The MOSFET has RthJH = 1.61 K/W, while each diode (boost, bypass, polarity protection) has RthJH = 1.37–1.38 K/W. These values are measured under standard mounting conditions (20–50 N clamp force, thermal interface material applied). They reflect the total thermal path through the Al₂O₃ baseplate and PressFIT interface - not including heatsink or TIM resistance.