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Infineon Technologies DF419MR20W3M1HFB11BPSA1
- Part No.:
- DF419MR20W3M1HFB11BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- Module
- Datasheet:
-
DF419MR20W3M1HFB11BPSA1.pdf
- Description:
- MOSFET 4N-CH 2000V 50A AG-EASY3B
- Quantity:
- Payment:
- Shipping:
Inventory:1
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Product details
Overview
DF419MR20W3M1HFB11BPSA1 from Infineon is a 2000 V, 60 A EasyPACK™ power module integrating a CoolSiC™ Trench MOSFET, a 2000 V / 40 A boost diode, and an NTC thermistor (5 kΩ @ 25 °C), housed in a low-inductance PressFIT package with integrated mounting clamps for industrial solar inverters and HV DC-DC converters.
For engineers reviewing the DF419MR20W3M1HFB11BPSA1 datasheet, DF419MR20W3M1HFB11BPSA1 pinout, DF419MR20W3M1HFB11BPSA1 application, or DF419MR20W3M1HFB11BPSA1 equivalent, key selection criteria include its 14 nH stray inductance, 0.515 K/W MOSFET junction-to-heatsink thermal resistance, -3 V/18 V gate drive requirement, and IEC 60747/60749 qualification for industrial environments.
Technical Context
This module implements a half-bridge topology with discrete CoolSiC™ MOSFET and Si boost diode in a single press-fit housing. It supports high-voltage switching up to 2000 V with 120 A peak drain current and operates at junction temperatures up to 175 °C under overload conditions.
The integrated NTC thermistor provides real-time temperature monitoring with B25/100 = 3433 K and ±5% R100 tolerance. Its low-inductive design (14 nH) and rugged mechanical mounting enable stable operation in high-di/dt solar string inverters and energy storage systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 2000 V - Enables direct connection to 1500 V DC solar arrays with 33% safety margin. |
| IDN | 60 A - Continuous rated current per MOSFET at Tvj = 25 °C, defining base conduction capability. |
| RDS(on) | 17.2–51.7 mΩ - Increases 3× from 25 °C to 175 °C, requiring thermal-aware gate drive design. |
| LsCE | 14 nH - Limits voltage overshoot during turn-off, reducing snubber requirements in 1200 V bus designs. |
| R25 (NTC) | 5 kΩ - Standard value for compatibility with common analog front-end temperature sensing circuits. |
| VF (Boost Diode) | 1.50–2.67 V - Forward drop increases with temperature, impacting conduction loss in high-efficiency boost stages. |
| RthJH (MOSFET) | 0.515 K/W - Defines thermal path efficiency from die to heatsink; critical for derating above 125 °C ambient. |
Pinout & Package
Package: EasyPACK™ 2B (19 mm × 120 mm × 20 mm), ceramic-based Al2O3 substrate with PressFIT terminals and integrated mounting clamps. Isolation rating: 3.2 kV RMS (50 Hz, 1 min), creepage ≥ 10.2 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1 (Source) | MOSFET source terminal | Low-side return path; connects directly to heatsink ground plane via PressFIT contact. |
| P2 (Drain) | MOSFET drain terminal | High-voltage DC bus input; carries full 60 A continuous current and 120 A peak. |
| P3 (Gate) | MOSFET gate control | Requires -3 V off-state and +18 V on-state; internal 3.8 Ω gate resistor limits dv/dt sensitivity. |
| P4 (Anode) | Boost diode anode | Connects to PV array positive; withstands 2000 V reverse bias during MOSFET conduction. |
| P5 (Cathode) | Boost diode cathode | Connects to output capacitor; conducts 40 A DC forward current with 1.5–2.67 V drop. |
| NTC1 / NTC2 | NTC thermistor terminals | Two-wire interface for temperature feedback; 5 kΩ @ 25 °C, B25/100 = 3433 K. |
Key Features
| Feature | Design Value |
|---|---|
| PressFIT contact technology | Eliminates soldering; enables repeatable, low-contact-resistance interconnection without thermal cycling fatigue. |
| Integrated NTC thermistor | Monitors die temperature in real time with ±5% R100 accuracy, enabling precise thermal shutdown and derating. |
| Low stray inductance (14 nH) | Reduces switching voltage overshoot and EMI generation in >10 kHz solar MPPT stages. |
| Rugged mechanical mounting | Integrated clamps ensure uniform pressure across ceramic substrate, preventing delamination under vibration. |
| IEC-qualified industrial reliability | Validated per IEC 60747 (semiconductors), 60749 (discrete reliability), and 60068 (environmental stress). |
Applications
| Solar String Inverter | Energy Storage DC-DC Converter |
|---|---|
|
Use Scenario: High-voltage DC-DC stage stepping 1500 V PV input to 800 V battery bus in utility-scale solar farms. IC Role / Device Role / Timing Role: CoolSiC™ MOSFET acts as primary high-side switch; boost diode handles freewheeling current during dead-time. Use Value: 2000 V VDSS and 120 A IDRM support 1500 V DC string operation with headroom for transient surges. |
Use Scenario: Bidirectional isolated DC-DC converter linking 1500 V solar array and 1000 V battery stack in microgrid applications. IC Role / Device Role / Timing Role: Module serves as synchronous rectifier and active switch in dual-active-bridge topology. Use Value: Low RDS(on) drift (36.6 mΩ @ 125 °C) maintains efficiency across wide ambient temperature range (-40 to +65 °C). |
| Industrial HV UPS | EV Charging Front-End Rectifier |
|
Use Scenario: Three-phase Vienna rectifier front-end operating at 1000 V DC link in data center uninterruptible power supplies. IC Role / Device Role / Timing Role: MOSFET functions as active switch in PFC leg; boost diode provides unidirectional current path during regeneration. Use Value: 0.515 K/W RthJH enables 60 A continuous operation without forced air cooling at 40 °C ambient. |
Use Scenario: 1500 V DC fast-charging station rectifier converting AC grid to stabilized HV DC for battery charging. IC Role / Device Role / Timing Role: Module implements active clamp circuit to manage leakage inductance energy in phase-shifted full-bridge topologies. Use Value: Integrated NTC allows closed-loop thermal management of both MOSFET and diode dies, preventing localized hot spots during 350 kW burst charging. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC power module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FF600R12ME4 | 1200 V Si IGBT module, higher conduction loss (VCE(sat) ≈ 2.1 V), no integrated NTC. | Lower voltage rating limits use to ≤1000 V DC systems; requires external temperature sensing. | Select when cost sensitivity outweighs efficiency and thermal monitoring needs in medium-voltage UPS. |
| IMZ120R045M1H | 1200 V SiC MOSFET discrete (45 mΩ), no boost diode or NTC; requires external layout for low Ls. | Enables custom topology but increases PCB area, parasitic inductance, and assembly complexity. | Select when topology flexibility and discrete optimization outweigh integration benefits in modular converter designs. |
Compared with FF600R12ME4 and IMZ120R045M1H, DF419MR20W3M1HFB11BPSA1 delivers higher voltage capability (2000 V), integrated thermal sensing, and lower system-level inductance-making it optimal for next-generation 1500 V+ solar and storage systems where reliability and compactness are prioritized over discrete tuning.
Availability
DF419MR20W3M1HFB11BPSA1 is available at Aetrix Electronics and suitable for solar string inverters, industrial HV UPS systems, and EV charging front-end rectifiers requiring stable component supply across multi-year production cycles.
Supply support for DF419MR20W3M1HFB11BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D centers.
This part belongs to Infineon's EasyPACK™ family of press-fit power modules, designed specifically for high-reliability, high-voltage renewable energy conversion systems requiring minimal assembly complexity and robust thermal performance.
FAQ
What gate drive voltage is required for reliable switching?
The DF419MR20W3M1HFB11BPSA1 requires -3 V for guaranteed turn-off and +18 V for full enhancement, per Table 4 of the datasheet. Using less than +18 V increases RDS(on) and conduction losses; exceeding +20 V risks gate oxide degradation. The internal 3.8 Ω gate resistor reduces sensitivity to layout-induced ringing.
Can the body diode be used for freewheeling in hard-switched topologies?
No-the body diode of the CoolSiC™ MOSFET is not rated for polarity protection or sustained freewheeling, as explicitly stated in the datasheet note. External diodes must be used for reverse-current protection, and the integrated boost diode (P4–P5) is intended for dedicated boost-stage conduction-not MOSFET body diode replacement.
How is thermal measurement accuracy affected by NTC placement?
The NTC is embedded within the module substrate near the MOSFET die, providing direct junction-proximate temperature feedback. Its 5 kΩ @ 25 °C rating and B25/100 = 3433 K allow accurate linearization across -40 to +175 °C, with ±5% R100 tolerance translating to ±2.5 °C absolute error at 100 °C when calibrated per AN 2021-13.
What mechanical torque is required for mounting clamps?
The integrated mounting clamps require M5 screws tightened to 1.3–1.5 Nm, as specified in Table 2. Under-torquing risks thermal interface voids and hotspots; over-torquing may fracture the Al2O3 substrate. Mounting must follow Infineon Application Note AN 2021-13 for uniform pressure distribution and long-term reliability.
DF419MR20W3M1HFB11BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EasyPACK™
- Package/Case:
- Module
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 4 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 2000V (2kV)
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tj)
- Rds On (Max) @ Id, Vgs:
- 26.5mOhm @ 60A, 18V
- Vgs(th) (Max) @ Id:
- 5.15V @ 34mA
- Gate Charge (Qg) (Max) @ Vgs:
- 234nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7240pF @ 1.2kV
- Power - Max:
- -
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- AG-EASY3B
DF419MR20W3M1HFB11BPSA1 FAQ
1.How can I place an order for DF419MR20W3M1HFB11BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for DF419MR20W3M1HFB11BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF419MR20W3M1HFB11BPSA1 reliable?
The price and inventory of DF419MR20W3M1HFB11BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF419MR20W3M1HFB11BPSA1 is usually 5 days.
3.What payment methods are accepted for DF419MR20W3M1HFB11BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF419MR20W3M1HFB11BPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF419MR20W3M1HFB11BPSA1?
DF419MR20W3M1HFB11BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF419MR20W3M1HFB11BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF419MR20W3M1HFB11BPSA1?
For technical support, including DF419MR20W3M1HFB11BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF419MR20W3M1HFB11BPSA1 requirements.
6.How does Aetrix verify that DF419MR20W3M1HFB11BPSA1 is sourced from the original manufacturer or authorized distributors?
All DF419MR20W3M1HFB11BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF419MR20W3M1HFB11BPSA1 meets industry standards.
7.What is the process for return or replacement of DF419MR20W3M1HFB11BPSA1?
All DF419MR20W3M1HFB11BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with DF419MR20W3M1HFB11BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF419MR20W3M1HFB11BPSA1 part is unused and in its original packaging.
Return procedure for DF419MR20W3M1HFB11BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF419MR20W3M1HFB11BPSA1 Tags
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