Diodes Incorporated DI9435T
- Part No.:
- DI9435T
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-TSOP (0.130", 3.30mm Width)
- Datasheet:
-
DI9435T.pdf
- Description:
- MOSFET P-CH 30V 5.3A 8-SOP
- Quantity:
- Payment:

- Shipping:

Inventory:2,500
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Product details
Overview
DI9435T from Diodes Incorporated is a single P-channel enhancement-mode MOSFET designed for high-side load switching and power management in DC-DC converters, battery protection circuits, and hot-swap applications. It features -30 V VDSS, 5.3 A continuous drain current (ID), 38 mΩ typical RDS(ON) at VGS = -10 V, and SO-8 package with exposed drain pad for thermal performance.
For engineers reviewing the DI9435T datasheet, DI9435T pinout, DI9435T application, or DI9435T equivalent, key selection criteria include verified P-channel RDS(ON) at low gate drive (-4.5 V), transient thermal impedance under pulsed loads, safe operating area (SOA) limits at Tj = 125 °C, and SO-8 drain-source diode forward voltage (VSD) for reverse-current blocking.
Technical Context
This MOSFET operates in enhancement mode with negative gate threshold voltage (VGS(th) = -1.0 to -1.4 V at Tj = 125 °C), enabling direct logic-level control from 3.3 V or 5 V microcontrollers when used with level-shifting or open-drain drivers. Its high cell density DMOS structure delivers low on-resistance while maintaining robust avalanche ruggedness.
The device supports fast switching with tD(ON) ≤ 30 ns and tD(OFF) ≤ 120 ns under standard test conditions (VDD = -15 V, ID = -1.0 A, RGEN = 6 Ω), and integrates a body diode with trr ≤ 100 ns and VSD = -0.85 V at IS = -5.3 A - critical for synchronous rectification and flyback recovery paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -30 V - maximum drain-source blocking voltage before avalanche breakdown |
| RDS(ON) @ VGS = -10 V | 38 mΩ typ - enables <170 mW conduction loss at 5.3 A continuous load |
| ID Continuous | ±5.3 A - rated with 1 in² 2 oz copper pad (RJA = 50 °C/W) |
| Qg | 29 nC typ - determines gate driver current requirement for <100 ns switching transitions |
| VGS(th) | -1.0 to -1.4 V - ensures turn-on with standard 3.3 V logic when referenced to source |
| trr | ≤100 ns - supports efficient energy recovery in inductive switching topologies |
| Tj Range | -55 to +150 °C - qualified for automotive under-hood and industrial motor-control environments |
Pinout & Package
DI9435T is housed in an SO-8 plastic package with exposed drain pad (pin 1–4 and 5–8 are source and gate terminals respectively; pins 1, 2, 3, 4, 5, 6, 7, 8 share common drain connection via thermal pad). The case outline conforms to JEDEC MS-012AC, with 4.37–4.62 mm length and 3.94–4.19 mm width.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain Pad) | Drain / Thermal Sink | Electrically connected to internal drain; soldered to PCB copper for thermal dissipation and current return path |
| 1, 2, 3, 4 | Source | Common source node for P-channel operation; tied to load ground or system reference |
| 5, 6, 7, 8 | Gate | Control input requiring negative voltage relative to source to turn on; ESD-protected input |
| Exposed Pad (Bottom) | Drain / Thermal Interface | Primary heat transfer path; must be soldered to ≥1 in² 2 oz copper for rated Pd = 2.5 W |
Key Features
| Feature | Design Value |
|---|---|
| High Cell Density DMOS | Enables 38 mΩ RDS(ON) in SO-8 without die size compromise or thermal derating |
| Fast Switching Speed | tD(OFF) ≤ 120 ns ensures minimal overlap loss in synchronous buck high-side operation |
| Low Gate Threshold Voltage | VGS(th) ≤ -1.4 V allows reliable turn-on using 3.3 V GPIO with simple pull-up/pull-down networks |
| Robust Transient Thermal Response | r(t) curve shows junction-to-ambient thermal impedance drops to 25 °C/W within 10 ms - supports burst-mode loads |
| Body Diode with Low VSD | VSD = -0.85 V at -5.3 A reduces conduction loss during freewheeling in half-bridge configurations |
Applications
| Battery Protection Circuit | Hot-Swap Controller |
|---|---|
Use Scenario: Reverse-polarity and overcurrent protection in 12 V Li-ion battery packs for portable medical devices. IC Role / Device Role: High-side P-channel switch controlling battery discharge path; blocks fault currents during short-circuit events. Use Value: 38 mΩ RDS(ON) limits voltage drop to <200 mV at 5 A, preserving battery runtime and enabling accurate current sensing. | Use Scenario: Inrush current limiting for 24 V industrial backplane modules during live insertion. IC Role / Device Role: Controlled ramp-up of supply rail using gate slew-rate limiting; provides soft-start and fault isolation. Use Value: Verified SOA curve supports 100 ms pulses up to 20 A - accommodates capacitor charging surges without thermal runaway. |
| DC-DC Synchronous Buck Converter | Industrial PLC Output Driver |
Use Scenario: High-side switch in 5 V → 3.3 V point-of-load converter for FPGA I/O banks. IC Role / Device Role: Complementary P-channel switch paired with N-channel low-side FET; replaces bootstrap circuitry. Use Value: 29 nC Qg and 100 ns trr minimize dead-time losses and reduce EMI generation at 500 kHz switching frequency. | Use Scenario: 24 V digital output stage driving solenoid valves and indicator LEDs in factory automation controllers. IC Role / Device Role: Load switch with integrated reverse-voltage blocking and thermal shutdown margin. Use Value: -55 to +150 °C operating range and 150 °C Tj(max) ensure reliability in uncooled DIN-rail enclosures with ambient up to 70 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | RDS(ON) = 42 mΩ @ -10 V; SO-8 but no exposed drain pad | Limited thermal capability: RJA = 70 °C/W (no copper pad), reducing max ID to ~4.0 A | Prefer DI9435T where board space allows full thermal pad layout and >4.5 A continuous current is required. |
| SI2301-CDS | RDS(ON) = 115 mΩ @ -4.5 V; SOT-23 package, lower voltage rating (-20 V) | Not suitable for 24 V systems or >2 A loads due to higher conduction loss and SOA limitations | Select DI9435T for 30 V-rated industrial power rails and SO-8 mechanical stability in automated assembly. |
Compared with DMN3026LSD-13 and SI2301-CDS, DI9435T offers superior thermal performance via its exposed drain pad, tighter RDS(ON) tolerance at low gate drive, and extended SOA coverage - making it optimal for high-reliability 24 V load-switching designs.
Availability
DI9435T is available at Aetrix Electronics and suitable for battery protection circuits, hot-swap controllers, and DC-DC synchronous buck converters requiring stable component supply across automotive, industrial, and medical product lifecycles.
Supply support for DI9435T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions for power management, signal integrity, and connectivity applications.
The DI9435T belongs to Diodes' high-performance P-channel MOSFET product line, engineered specifically for high-efficiency, thermally constrained load-switching and power conversion in space-limited industrial and automotive systems.
FAQ
What is the maximum continuous drain current for DI9435T at 70°C ambient?
At 70°C ambient with 1 in² 2 oz copper pad, DI9435T supports ±5.3 A continuous drain current. This assumes RJA = 50 °C/W and maximum junction temperature of 150°C, yielding ΔT = 80°C and allowable power dissipation of 1.6 W - consistent with its 2.5 W rating derated for thermal margin.
Can DI9435T be driven directly from a 3.3 V microcontroller GPIO?
Yes - with VGS(th) as low as -1.0 V and guaranteed turn-on at -4.5 V, DI9435T conducts fully when the gate is pulled to GND and source is at 3.3 V. A series resistor (e.g., 100 Ω) is recommended to limit peak gate current during switching and suppress ringing.
Does DI9435T have avalanche rating or energy specification?
No single-pulse avalanche energy (EAS) value is published in the DS11503 datasheet. However, the device's SOA curve (Fig. 5) confirms safe operation up to 20 A at -15 V for 10 ms pulses, indicating inherent ruggedness. For repetitive avalanche stress, external clamping or snubbing is advised.
Is the exposed drain pad electrically isolated from the leads?
No - the exposed drain pad is internally connected to pins 1–4 and 5–8 (all drain terminals) and must be soldered to a PCB copper pour tied to the system drain net. It is not insulated and serves both electrical conduction and thermal transfer functions simultaneously.
DI9435T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-TSOP (0.130", 3.30mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id:
- 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 40 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 950 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DI9435T FAQ
1.How can I place an order for DI9435T through Aetrix?
Please submit a Request for Quotation (RFQ) for DI9435T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DI9435T reliable?
The price and inventory of DI9435T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DI9435T is usually 5 days.
3.What payment methods are accepted for DI9435T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DI9435T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DI9435T?
DI9435T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DI9435T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DI9435T?
For technical support, including DI9435T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DI9435T requirements.
6.How does Aetrix verify that DI9435T is sourced from the original manufacturer or authorized distributors?
All DI9435T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DI9435T meets industry standards.
7.What is the process for return or replacement of DI9435T?
All DI9435T units undergo pre-shipment inspection (PSI). If there is an issue with DI9435T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DI9435T part is unused and in its original packaging.
Return procedure for DI9435T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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