Diodes Incorporated DMC1016UPD-13

Overview

DMC1016UPD from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single PowerDI5060-8 (Type C) package, integrating an N-channel (12V, 17mΩ @ 4.5V, 9.5A) and P-channel (-20V, 20mΩ @ -4.5V, -8.7A) MOSFET for bidirectional load switching. It delivers low conduction loss, fast switching (t_R = 9.6ns / t_F = 22.5ns for Q1), and ESD-protected gate for the P-channel device, targeting notebook battery power management and DC-DC converter high-side/low-side control.

For engineers reviewing the DMC1016UPD datasheet, DMC1016UPD pinout, DMC1016UPD application, or DMC1016UPD equivalent, this dual MOSFET supports compact, thermally efficient loadswitch designs requiring matched R_DS(ON) tracking, low gate charge (Q_g = 18nC / 32nC), and robust thermal resistance (R_θJA = 55°C/W).

Technical Context

This device implements a monolithic complementary pair with independent gate terminals and shared source connections per channel-S1/D2 and S2/D1 are internally tied as common-source nodes. The N-channel exhibits V_GS(TH) = 0.6–1.5V and low C_iss = 1454pF, enabling efficient 4.5V logic-level drive; the P-channel features V_GS(TH) = -0.35 to -1.0V and higher C_iss = 3103pF, optimized for negative gate bias operation in synchronous buck topologies.

Thermal design leverages the PowerDI5060-8's exposed drain pad (D1/D2) for direct PCB copper thermal coupling, achieving R_θJC = 6.2°C/W. Body diode recovery is characterized with t_RR = 16.6ns (Q1) and 20.6ns (Q2), supporting high-frequency switching up to 1MHz in DC-DC converters without excessive reverse recovery loss.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 (Type C), surface-mount, thermally enhanced with exposed drain pads (D1, D2) for PCB heat sinking. Molded green compound, UL 94V-0 rated, MSL Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Compared with DMC2038LSD-13 and Si7852DP-T1-GE3, the DMC1016UPD offers superior 12V-system efficiency via lower R_DS(ON), integrated ESD protection for robust manufacturing, and thermal performance optimized for thin-profile notebook PCBs - making it the preferred choice for space-constrained, battery-sensitive applications.

Availability

DMC1016UPD is available at Aetrix Electronics and suitable for notebook battery management, DC-DC converter power stages, and industrial 12V loadswitching requiring stable component supply, long-term lifecycle assurance, and traceable green-material compliance.

Supply support for DMC1016UPD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs, with design centers in Asia, Europe, and the U.S., and manufacturing in IATF 16949-certified facilities.

The DMC1016UPD belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, space-constrained power management in portable computing and industrial power conversion systems.

FAQ

What is the maximum safe operating junction temperature for DMC1016UPD?

The absolute maximum junction temperature is +150°C, validated per JEDEC standards and confirmed in the datasheet's Thermal Characteristics table. Operation above this limit risks permanent parametric shift or bond-wire failure. Derating is required above +70°C ambient, where continuous power dissipation drops from 2.3W to 1.5W.

Can DMC1016UPD be used in a synchronous buck converter with 3.3V gate drive?

Yes - the N-channel Q1 has V_GS(TH) as low as 0.6V and delivers 9.5A at V_GS = 4.5V; at 3.3V, R_DS(ON) rises to ~22mΩ (typical), still enabling usable 7A operation. The P-channel Q2 requires negative gate bias, so a charge pump or inverter is needed to generate -3.3V relative to its source.

How is the internal connection between Q1 and Q2 configured?

The device uses a common-source topology: S1 (Q1 source) is internally tied to D2 (Q2 drain), and S2 (Q2 source) is tied to D1 (Q1 drain). This forms a back-to-back configuration ideal for bidirectional blocking, not a half-bridge. No internal gate-to-gate or drain-to-drain connection exists.

Does DMC1016UPD require external gate resistors for EMI control?

Yes - while not mandatory for basic function, a 5–10Ω series resistor on G1 and G2 is recommended to dampen ringing caused by trace inductance interacting with C_iss (1454pF/3103pF). This reduces radiated emissions and prevents false turn-on during fast dv/dt events in high-density layouts.