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Diodes Incorporated DMC1018UPD-13
- Part No.:
- DMC1018UPD-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMC1018UPD-13.pdf
- Description:
- MOSFET N/P-CH 12V 9.5A PWRDI50
- Quantity:
- Payment:
- Shipping:
Inventory:2,500
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Product details
Overview
DMC1018UPD from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single PowerDI5060-8 (Type C) package, integrating an N-channel (12 V, 17 mΩ @ 4.5 V, 9.5 A) and P-channel (–20 V, 32 mΩ @ –4.5 V, –6.9 A) device for bidirectional load switching. It delivers low conduction loss, fast switching (tF = 21.9 ns for Q1), and thermally efficient operation in space-constrained notebook battery management and DC-DC converter power paths.
For engineers reviewing the DMC1018UPD datasheet, DMC1018UPD pinout, DMC1018UPD application, or DMC1018UPD equivalent, key selection criteria include dual-channel RDS(ON) matching at low gate drive (2.5 V/–2.5 V), body diode recovery performance (tRR = 14.3 ns / 9.8 ns), thermal resistance (RθJA = 54 °C/W), and JEDEC-qualified reliability for industrial embedded systems.
Technical Context
This dual-MOSFET integrates matched N- and P-channel silicon die in a thermally enhanced PowerDI5060-8 package with shared source terminals (S1/S2) and isolated gates (G1/G2) and drains (D1/D2). Its design targets synchronous rectification and high-side/low-side switching where gate drive voltage headroom is limited-e.g., 3.3 V or 5 V logic-controlled load switches requiring both polarity control.
The device operates across –55 °C to +150 °C junction temperature, with avalanche-rated ruggedness (EAS = 25 mJ / 14 mJ) and body diode forward voltage (VSD = 0.7–1.2 V / –0.7 to –1.2 V) optimized for reverse-current handling in battery protection circuits and buck-boost converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | Q1: 12 V; Q2: –20 V - defines maximum blocking voltage in load-switch and DC-DC high-side/low-side configurations |
| RDS(ON) @ VGS = 4.5 V | Q1: 17 mΩ; Q2: 32 mΩ - enables <100 mW conduction loss at 9.5 A/6.9 A, critical for thermal budget in thin-profile notebooks |
| Continuous ID | Q1: 9.5 A; Q2: –6.9 A - supports >10 W load switching at +25 °C ambient on FR-4 with 1-inch2 copper |
| Gate Threshold (VGS(TH)) | Q1: 0.6–1.5 V; Q2: –0.6 to –1.5 V - ensures turn-on compatibility with 1.8 V/3.3 V logic and low-voltage microcontrollers |
| Qg (Total Gate Charge) | Q1: 17.1 nC @ 4.5 V; Q2: 8.6 nC @ –4.5 V - determines driver strength requirement and switching loss trade-off in 500 kHz–1 MHz converters |
| Thermal Resistance RθJA | 54 °C/W - sets maximum power dissipation limit (2.3 W at TA = +25 °C) for PCB layout without heatsink |
| Body Diode tRR | Q1: 14.3 ns; Q2: 9.8 ns - minimizes reverse-recovery loss and EMI in synchronous rectifier applications |
Pinout & Package
Package: PowerDI5060-8 (Type C), surface-mount, thermally enhanced plastic case with exposed drain pads (D1/D2) and 100% matte tin-plated copper leadframe. Dimensions: 5.15 × 6.15 mm footprint, 1.0 mm max height, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Q1 (N-channel) | Common source node for N-MOS; tied to system ground or low-side return path in half-bridge |
| G1 | Gate of Q1 (N-channel) | Control input referenced to S1; requires positive VGS ≥ 2.5 V for full enhancement |
| D1 | Drain of Q1 (N-channel) | High-current output node; electrically isolated from D2; connects to load or power rail |
| S2 | Source of Q2 (P-channel) | Common source node for P-MOS; typically tied to VIN or high-side supply rail |
| G2 | Gate of Q2 (P-channel) | Control input referenced to S2; requires negative VGS ≤ –2.5 V for full enhancement |
| D2 | Drain of Q2 (P-channel) | High-current output node; electrically isolated from D1; connects to load or ground return |
Key Features
| Feature | Design Value |
|---|---|
| Complementary Pair Integration | Single-package N+P MOSFET eliminates board space and layout mismatch vs discrete solutions, enabling compact bidirectional load switch designs |
| Low RDS(ON) at 2.5 V Drive | Q1: 25 mΩ; Q2: 53 mΩ - ensures reliable turn-on from 2.5 V GPIOs or low-dropout regulators in battery-powered systems |
| Fast Switching Speed | tF = 21.9 ns (Q1), 14.6 ns (Q2) - reduces transition losses in high-frequency DC-DC converters (>1 MHz) |
| JEDEC High-Reliability Qualification | Qualified per AEC-Q101 stress test standards - supports long-term operation in industrial and extended-temperature embedded applications |
| Green, Halogen-Free Construction | UL 94V-0 mold compound; <900 ppm Br/Cl, <1000 ppm Sb - meets RoHS 3 and automotive environmental compliance requirements |
Applications
| Notebook Battery Protection | DC-DC Converter Synchronous Rectifier |
|---|---|
Use Scenario: Bidirectional current control between main battery and backup cell or USB-C PD port during charge/discharge arbitration. IC Role / Device Role / Timing Role: Dual-MOSFET load switch managing power path direction and overcurrent isolation with sub-100 ns switching transitions. Use Value: Prevents reverse current leakage (<1 µA IDSS) and enables <10 mΩ effective on-resistance via paralleled D1/D2 routing in PCB layout. | Use Scenario: High-efficiency synchronous rectification in buck-boost converters powering 3.3 V/5 V rails from Li-ion batteries. IC Role / Device Role / Timing Role: Complementary high-side (P-ch) and low-side (N-ch) switch pair replacing Schottky diodes to reduce conduction loss by >40%. Use Value: Achieves >94% efficiency at 5 A output due to matched RDS(ON) and fast tRR-limited body diode recovery. |
| USB Port Power Delivery Switch | Industrial Sensor Node Load Control |
Use Scenario: USB Type-C port power switching with VBUS fault protection and dead-time controlled hot-swap sequencing. IC Role / Device Role / Timing Role: N-channel (Q1) as low-side switch for VBUS discharge; P-channel (Q2) as high-side switch for VCONN or auxiliary power routing. Use Value: Enables <500 ns dead-time control using independent G1/G2 drive, preventing shoot-through while maintaining <10 ns propagation delay matching. | Use Scenario: Remote sensor node power gating to extend battery life in wireless IoT edge devices operating at –40 °C to +85 °C. IC Role / Device Role / Timing Role: Low-quiescent-load bidirectional switch controlling power to RF transceiver and analog front-end subsystems. Use Value: Delivers <1 µA shutdown current (IDSS) and stable RDS(ON) across –55 °C to +150 °C, validated per JEDEC high-temp storage tests. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LVT-7 | Lower VDS (8 V / –12 V), higher RDS(ON) (22 mΩ / 40 mΩ @ 4.5 V), smaller PowerDI3333 package | Better suited for 3.3 V logic-only systems with tighter board area constraints but lower voltage headroom | Select when board space is primary constraint and 12 V/–20 V blocking is unnecessary |
| SI6926ADQ-T1-GE3 | Higher VDS (30 V / –30 V), larger SO-8 package, higher Qg (26 nC / 22 nC), no JEDEC qualification | Supports wider input range in industrial DC-DC but lacks automotive-grade reliability validation | Select when higher voltage margin is required and AEC-Q101 qualification is not mandatory |
Compared with DMC1018UPD, DMC2038LVT-7 trades voltage rating and thermal capability for miniaturization, while SI6926ADQ-T1-GE3 offers higher blocking voltage at the cost of larger footprint and unqualified reliability-making DMC1018UPD optimal for thermally constrained, JEDEC-compliant notebook and portable power designs.
Availability
DMC1018UPD is available at Aetrix Electronics and suitable for notebook battery management, DC-DC converter synchronous rectification, and USB-C loadswitch applications requiring stable component supply, JEDEC-qualified reliability, and thermally efficient PowerDI5060-8 packaging.
Supply support for DMC1018UPD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.
The DMC series targets high-density power switching applications, with DMC1018UPD specifically engineered for complementary load switching in space- and thermal-constrained portable electronics requiring low-voltage gate drive and JEDEC reliability.
FAQ
What is the maximum continuous drain current for each channel at +70 °C ambient?
At TA = +70 °C, the N-channel (Q1) supports 7.6 A and the P-channel (Q2) supports –5.5 A under steady-state conditions on FR-4 with 1-inch² copper. These values reflect derating from the +25 °C ratings (9.5 A / –6.9 A) due to thermal resistance limitations (RθJA = 54 °C/W) and must be verified against actual PCB layout and airflow.
Can DMC1018UPD be used in a synchronous buck converter as both high-side and low-side switches?
Yes-Q2 (P-channel) serves as the high-side switch with gate driven relative to its source (S2), while Q1 (N-channel) acts as the low-side switch with gate referenced to S1. Independent gate control enables precise dead-time management; however, external bootstrap or charge-pump circuitry is not needed for Q2 since it is P-channel and self-referenced.
Is the PowerDI5060-8 package lead-free and RoHS compliant?
Yes-DMC1018UPD uses 100% matte tin annealed terminals over copper leadframe and fully complies with EU RoHS Directive 2015/863/EU (RoHS 3), with halogen- and antimony-free "Green" molding compound meeting UL 94V-0 flammability rating and J-STD-020 moisture sensitivity level 1.
Does this device include integrated ESD protection on gate terminals?
No-DMC1018UPD does not integrate gate-oxide ESD protection structures. The absolute maximum gate-source voltage is ±8 V (Q1) and ±12 V (Q2); external Zener clamps or RC snubbers are recommended in systems with high-noise gate drive or hot-plug events to prevent gate oxide rupture.
DMC1018UPD-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 12V, 20V
- Current - Continuous Drain (Id) @ 25°C:
- 9.5A, 6.9A
- Rds On (Max) @ Id, Vgs:
- 17mOhm @ 11.8A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30.4nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1525pF @ 6V
- Power - Max:
- 2.3W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMC1018UPD-13 FAQ
1.How can I place an order for DMC1018UPD-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMC1018UPD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMC1018UPD-13 reliable?
The price and inventory of DMC1018UPD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC1018UPD-13 is usually 5 days.
3.What payment methods are accepted for DMC1018UPD-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC1018UPD-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMC1018UPD-13?
DMC1018UPD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMC1018UPD-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMC1018UPD-13?
For technical support, including DMC1018UPD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC1018UPD-13 requirements.
6.How does Aetrix verify that DMC1018UPD-13 is sourced from the original manufacturer or authorized distributors?
All DMC1018UPD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC1018UPD-13 meets industry standards.
7.What is the process for return or replacement of DMC1018UPD-13?
All DMC1018UPD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC1018UPD-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMC1018UPD-13 part is unused and in its original packaging.
Return procedure for DMC1018UPD-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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