Diodes Incorporated DMC1018UPDWQ-13

Overview

DMC1018UPDWQ from Diodes Incorporated is a complementary pair enhancement-mode MOSFET comprising an N-channel (12 V, 17 mΩ @ 4.5 V, 31.3 A) and P-channel (–20 V, 38 mΩ @ –4.5 V, –20.9 A) device in a single PowerDI5060-8/SWP package, qualified to AEC-Q101 and designed for automotive motor control, DC-DC converters, and power-management functions.

For engineers reviewing the DMC1018UPDWQ datasheet, DMC1018UPDWQ pinout, DMC1018UPDWQ application, or DMC1018UPDWQ equivalent, this dual-channel MOSFET supports high-efficiency bidirectional switching in space-constrained automotive subsystems with wettable flank inspection capability and IATF 16949-certified manufacturing traceability.

Technical Context

This dual MOSFET integrates matched N- and P-channel silicon die optimized for synchronous rectification and half-bridge operation. Its gate threshold voltages (V_GS(TH) = +0.6–1.5 V for Q1, –0.6––1.5 V for Q2) enable robust low-voltage drive compatibility down to 2.5 V, while low R_DS(ON) values at both 2.5 V and 4.5 V gate drive support efficient operation across wide input voltage ranges.

The device features tightly coupled thermal design with shared exposed drain pad (R_θJC = 5.0 °C/W), 100% production-tested UIS capability, and low gate charge (Q_g = 17.1 nC / 8.6 nC) enabling fast switching with reduced driver losses - critical for high-frequency DC-DC and motor gate-drive applications.

Key Specifications

Pinout & Package

Package: PowerDI5060-8/SWP (Type UXD), surface-mount, wettable flank, exposed drain pad for thermal and electrical connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Compared with DMC2038LSDQ-13 and SI6926ADQ-T1-GE3, the DMC1018UPDWQ delivers superior current density, automotive-grade reliability, and manufacturability advantages - making it the optimal choice for space-constrained, safety-critical 12 V automotive power stages.

Availability

DMC1018UPDWQ is available at Aetrix Electronics and suitable for automotive motor control, DC-DC conversion, and power-management applications requiring stable component supply, long-term lifecycle assurance, and full traceability.

Supply support for DMC1018UPDWQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

The DMC1018UPDWQ belongs to Diodes' AEC-Q101-qualified PowerDI® MOSFET product line, engineered specifically for compact, thermally efficient power switching in automotive subsystems operating from 12 V battery rails.

FAQ

What is the maximum continuous drain current for each channel at TC = +70°C?

The N-channel (Q1) supports 25.0 A and the P-channel (Q2) supports –16.7 A at case temperature +70°C, as specified in the Absolute Maximum Ratings table. These values reflect derating due to thermal resistance and must be validated against actual PCB thermal design using R_θJC = 5.0 °C/W and ambient conditions.

Does the DMC1018UPDWQ require external gate resistors for safe operation?

No external gate resistors are mandated, but a 6 Ω resistor is used in the datasheet's switching time test circuit (V_GS = 4.5 V, R_g = 6 Ω). Actual selection depends on EMI targets, driver capability, and dV/dt control needs - typical values range from 2.2 Ω to 10 Ω for automotive 500 kHz–1 MHz switching.

How is the common drain pad configured electrically and thermally?

The exposed drain pad connects internally to both Q1 and Q2 drains and must be soldered to a large PCB copper area for thermal dissipation. Electrically, it serves as the common power node - typically tied to ground for low-side N-channel or to input rail for high-side P-channel configurations in half-bridge layouts.

Can the DMC1018UPDWQ replace discrete N- and P-channel MOSFETs in existing designs?

Yes, provided the PCB layout accommodates the PowerDI5060-8/SWP footprint and gate drive circuitry meets the separate V_GS requirements (0–4.5 V for Q1, 0 to –4.5 V relative to S2 for Q2). Pin-compatible replacement reduces component count and improves thermal coupling versus discrete solutions.