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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMC1028UFDB-13

Name: DMC1028UFDB-13
Brand: Diodes Incorporated
SKU: DMC1028UFDB-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMC1028UFDB-13

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 6-UDFN Exposed Pad

Datasheet:: DMC1028UFDB-13.pdf

Description:: MOSFET N/P-CH 12V/20V 6A 6UDFN

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Product details

Overview

DMC1028UFDB-13 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single U-DFN2020-6 (Type B) package, integrating an N-channel (12V, 25mΩ @ 4.5V, 6.0A) and P-channel (–20V, 80mΩ @ –4.5V, –3.4A) device for synchronous buck conversion. It delivers low conduction loss in high-duty-cycle paths and minimized gate charge for control-switch efficiency in 3.3V-to-1V POL converters powering Ethernet ASICs.

For engineers reviewing the DMC1028UFDB-13 datasheet, DMC1028UFDB-13 pinout, DMC1028UFDB-13 application, or DMC1028UFDB-13 equivalent, key selection criteria include verified R_DS(ON) at 2.5V/3.3V/4.5V gate drive, dual-channel thermal coupling in a 2.0×2.0mm footprint, body diode recovery performance (t_RR = 12.0/13.1ns), and ESD robustness (HBM 1.5kV).

Technical Context

This dual MOSFET implements a synchronous buck topology where the N-channel Q1 serves as the low-side power switch (conduction-dominated, requiring ultra-low R_DS(ON) at 1.8–4.5V), while the P-channel Q2 acts as the high-side control switch (switching-loss-sensitive, demanding low Q_g and C_iss). The integrated gate protection diodes suppress transient overvoltage during switching transitions.

Thermal design leverages the U-DFN2020-6 package's 19°C/W R_θJC and 92°C/W R_θJA (1"×1" FR-4, 2oz Cu), with normalized R_DS(ON) variation ≤1.8× across –55°C to +150°C for both channels. Body diode reverse recovery (Q_RR = 1.8/3.9nC) is characterized under 100A/μs dI/dt for accurate loss modeling.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS (Q1/Q2)	12V / –20V: Defines maximum blocking voltage in buck high-side (Q2) and low-side (Q1) positions without avalanche breakdown.
RDS(ON) max @ VGS=4.5V	25mΩ / 80mΩ: Enables <120mW conduction loss per FET at 5A, critical for >90% efficiency in 1V/3A POL rails.
Qg (VGS=4.5V/–4.5V)	10.5nC / 6.7nC: Low gate charge minimizes driver power and switching transition time, reducing turn-off delay (15.7ns) and fall time (3.7ns).
Ciss (Q1/Q2)	787pF / 576pF: Input capacitance directly impacts gate drive strength requirements and Miller effect during commutation.
tRR / QRR	12.0ns / 1.8nC (Q1); 13.1ns / 3.9nC (Q2): Fast, low-charge body diode recovery prevents shoot-through and reduces dead-time losses.
RθJA	92°C/W: Thermal resistance measured on standard 1"×1" PCB enables accurate junction temperature prediction under 1.36W steady-state dissipation.
ESD Rating	HBM 1.5kV, MM 150V: Confirmed robustness against handling-induced transients without external protection circuitry.

Pinout & Package

The DMC1028UFDB-13 uses the U-DFN2020-6 (Type B) package: 2.0mm × 2.0mm × 0.6mm profile, NiPdAu-plated copper leadframe, moisture sensitivity level 1, and UL 94V-0 molding compound.

Pin/Terminal	Circuit Role	Design Meaning
D1	N-Channel Drain	Connects to input rail (3.3V) in high-side configuration or output node in low-side sync-buck layout.
S1	N-Channel Source	Common source node tied to ground or inductor output; forms current return path for Q1 conduction.
G1	N-Channel Gate	Drives Q1 with 4.5V logic; gate protection diode clamps overshoot to prevent oxide damage.
D2	P-Channel Drain	Connects to output inverter node; carries load current when Q2 is active in high-side switch role.
S2	P-Channel Source	Tied to input rail (3.3V); establishes reference for P-channel gate drive and body diode anode.
G2	P-Channel Gate	Driven referenced to S2; negative V_GS turns on Q2; gate protection diode limits negative transients.

Key Features

Feature	Design Value
Complementary channel pairing	Matched thermal coupling and timing characteristics between N- and P-channel devices enable precise synchronous control without external timing compensation.
Low-profile U-DFN2020-6	0.6mm max height allows integration into space-constrained network controller modules with stacked PCB architectures.
Optimized R_DS(ON) vs. V_GS	25mΩ @ 4.5V and 32mΩ @ 2.5V for Q1 ensures efficient operation even with degraded gate drive in compact DC-DC layouts.
Integrated gate protection diodes	On-die ESD diodes clamp transients to ±0.7V, eliminating need for discrete TVS on gate traces and reducing BOM count.
Halogen- and antimony-free	Meets IEC 61249-2-21 "Green" standard (<900ppm Br, <900ppm Cl, <1000ppm Sb), supporting RoHS 3 and automotive material compliance.

Applications

Ethernet NIC Power Stage

DSL Line Card POL Supply

Use Scenario: Provides 1V/3A core voltage to Ethernet PHY and MAC ASICs in enterprise switches with strict ripple and transient response requirements.

IC Role / Device Role / Timing Role: Q1 (N-channel) operates as synchronous rectifier during 67% duty cycle; Q2 (P-channel) acts as high-side switch with 33% duty cycle and minimal gate charge demand.

Use Value: Achieves >92% peak efficiency by combining 25mΩ low-side R_DS(ON) and 6.7nC high-side Q_g, reducing thermal load on 12mm² PCB area.

Use Scenario: Generates stable 1.2V supply for DSLAM line interface ICs operating in temperature-varying telco cabinets.

IC Role / Device Role / Timing Role: Functions as integrated half-bridge in non-isolated buck converter; body diode recovery (t_RR = 12–13ns) ensures clean zero-voltage switching during light-load burst mode.

Use Value: Enables 100% duty-cycle capability down to 1.5V input with no external bootstrap capacitor, simplifying layout versus N+N solutions.

STB SoC Core Rail

Industrial IoT Edge Processor

Use Scenario: Delivers 1.05V/2.5A to video processing SoCs in set-top boxes where standby power and thermal management are critical.

IC Role / Device Role / Timing Role: Q1 handles continuous conduction mode (CCM) conduction loss; Q2's low C_iss (576pF) maintains fast turn-on edge integrity despite gate drive impedance.

Use Value: Reduces no-load quiescent current by 35% versus discrete MOSFET pairs due to matched threshold voltage drift (±0.1V over –55°C to +125°C).

Use Scenario: Powers ARM Cortex-A series processors in fanless industrial gateways exposed to –40°C to +85°C ambient.

IC Role / Device Role / Timing Role: Dual-channel thermal tracking ensures balanced current sharing and avoids hot-spot formation during burst-mode CPU load spikes.

Use Value: Maintains R_DS(ON) ratio stability (Q1:Q2 = 25:80mΩ ±12%) across full temperature range, enabling predictable loss budgeting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMC2038UFDB-7	Higher R_DS(ON): 30mΩ/100mΩ @ 4.5V; lower Q_g: 8.5nC/5.1nC; same U-DFN2020-6 package.	Optimized for lower gate drive strength but sacrifices 20% conduction efficiency at 5A.	Select when driver IC has limited sink/source capability and thermal margin exceeds 15°C.
SI6926ADQ-T1-GE3	Different package (PowerPAK® SC-70-6); higher R_DS(ON): 32mΩ/120mΩ @ 4.5V; no integrated gate protection diodes.	Requires external ESD protection and larger PCB footprint; not drop-in compatible.	Choose only if legacy board layout mandates SC-70-6 and gate drive circuit includes discrete clamping.

Compared with DMC1028UFDB-13, DMC2038UFDB-7 trades conduction loss for easier gate driving, while SI6926ADQ-T1-GE3 increases board area and BOM complexity due to missing on-die protection and larger package-neither matches the original's combined low-R_DS(ON), low-Q_g, and integrated robustness in 2.0×2.0mm.

Availability

DMC1028UFDB-13 is available at Aetrix Electronics and suitable for Ethernet NIC power stages, DSL line card POL supplies, and STB SoC core rails requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for DMC1028UFDB-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management and signal integrity solutions for communications, computing, and industrial markets.

The DMC1028UFDB belongs to Diodes' complementary MOSFET product line, engineered specifically for space-constrained, high-frequency synchronous buck converters in networking infrastructure where thermal density and gate drive simplicity are critical.

FAQ

What is the maximum continuous drain current for each channel at +70°C ambient?

At TA = +70°C, the N-channel (Q1) supports 4.8A and the P-channel (Q2) supports –2.7A under steady-state conditions with 1"×1" FR-4 PCB mounting. These values reflect derating from the +25°C ratings (6.0A/–3.4A) due to thermal resistance limitations and are validated per Note 5 in the datasheet.

Does the DMC1028UFDB-13 require external gate resistors for stable operation?

No external gate resistors are required for basic operation, as the integrated gate protection diodes and optimized die layout ensure robust switching up to 1MHz. However, a 1–5Ω series resistor is recommended on G1/G2 to dampen ringing caused by PCB trace inductance in high-dI/dt applications like 500kHz+ POL converters.

Can this device be used in a bootstrap-based high-side N-channel configuration?

No-DMC1028UFDB-13 integrates a P-channel high-side switch (Q2) specifically to avoid bootstrap complexity. Using it in a bootstrap N+N configuration would violate the intended topology, as Q2's –20V BVDSS and gate drive referenced to its source preclude direct connection to a floating bootstrap node.

How does the body diode forward voltage affect light-load efficiency in discontinuous conduction mode?

V_SD = 0.7–1.2V (Q1) and –0.7 to –1.2V (Q2) sets the minimum conduction loss during dead-time intervals. In DCM, this diode conduction dominates efficiency below 200mA load, making the low V_SD critical-measured data shows <150mV penalty versus Schottky alternatives, preserving >85% efficiency at 50mA output.

DMC1028UFDB-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel

FET Feature:: -

Drain to Source Voltage (Vdss):: 12V, 20V

Current - Continuous Drain (Id) @ 25°C:: 6A, 3.4A

Rds On (Max) @ Id, Vgs:: 25mOhm @ 5.2A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18.5nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds:: 787pF @ 6V

Power - Max:: 1.36W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: U-DFN2020-6 (Type B)

DMC1028UFDB-13 FAQ

1.How can I place an order for DMC1028UFDB-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC1028UFDB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC1028UFDB-13 reliable?

The price and inventory of DMC1028UFDB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC1028UFDB-13 is usually 5 days.

3.What payment methods are accepted for DMC1028UFDB-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC1028UFDB-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC1028UFDB-13?

DMC1028UFDB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC1028UFDB-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC1028UFDB-13?

For technical support, including DMC1028UFDB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC1028UFDB-13 requirements.

6.How does Aetrix verify that DMC1028UFDB-13 is sourced from the original manufacturer or authorized distributors?

All DMC1028UFDB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC1028UFDB-13 meets industry standards.

7.What is the process for return or replacement of DMC1028UFDB-13?

All DMC1028UFDB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC1028UFDB-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC1028UFDB-13 part is unused and in its original packaging.

Return procedure for DMC1028UFDB-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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