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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMC1028UFDB-7

Name: DMC1028UFDB-7
Brand: Diodes Incorporated
SKU: DMC1028UFDB-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMC1028UFDB-7

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 6-UDFN Exposed Pad

Datasheet:: DMC1028UFDB-7.pdf

Description:: MOSFET N/P-CH 12V/20V 6A 6UDFN

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Product details

Overview

DMC1028UFDB from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single U-DFN2020-6 (Type B) package, integrating an N-channel (12V, 25mΩ @ 4.5V, 6.0A) and P-channel (–20V, 80mΩ @ –4.5V, –3.4A) device optimized for synchronous buck conversion in 3.3V-to-1V point-of-load power supplies for Ethernet NICs and DSL modems.

For engineers reviewing the DMC1028UFDB datasheet, DMC1028UFDB pinout, DMC1028UFDB application, or DMC1028UFDB equivalent, this dual MOSFET supports high-efficiency POL designs where low R_DS(ON), minimized gate charge, and thermally robust 0.6mm-profile packaging are critical for compact, high-current ASIC core voltage regulation.

Technical Context

This device implements a complementary synchronous buck topology without requiring a charge pump: the P-channel Q2 serves as the high-side control switch (duty cycle ~33% at 3.3V→1V), while the N-channel Q1 acts as the low-side synchronous rectifier conducting for ~67% of each cycle-making conduction loss dominant and justifying its ultra-low 17mΩ typical R_DS(ON) at V_GS = 4.5V.

Q1 delivers 7.1A pulsed drain current with 787pF C_iss and 10.5nC total gate charge at 4.5V, while Q2 provides 4.0A pulsed current, 576pF C_iss, and only 6.7nC Q_g at –4.5V-enabling fast switching with reduced drive power and lower EMI generation in high-frequency POL converters.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS (Q1/Q2)	12V / –20V - Defines maximum blocking voltage in buck high-side (Q2) and low-side (Q1) positions; ensures safe operation under 3.3V input transients.
RDS(ON) max	25mΩ @ 4.5V (Q1), 80mΩ @ –4.5V (Q2) - Directly determines conduction loss in continuous and pulsed load conditions up to 3A output.
ID max (TA=25°C)	6.0A (Q1), –3.4A (Q2) - Specifies steady-state current capability for thermal design of PCB copper area and layout.
Qg (VGS=±4.5V)	10.5nC (Q1), 6.7nC (Q2) - Governs gate driver power requirement and switching transition time in 500kHz–2MHz POL converters.
Ciss	787pF (Q1), 576pF (Q2) - Impacts Miller effect and gate drive stability; enables clean turn-on/turn-off with standard 1Ω gate resistors.
RθJA	92°C/W (steady state) - Sets junction temperature rise under 1.36W dissipation on 1″×1″ 2oz FR-4; validates thermal margin at 3A load.
Package	U-DFN2020-6 (Type B), 2.0×2.0×0.6mm - Enables ultra-compact placement adjacent to ASICs; requires precise solder paste volume and reflow profile control.

Pinout & Package

U-DFN2020-6 (Type B) package with exposed thermal pad (pin 6), 0.65mm pitch, and NiPdAu-plated terminals. Molded green compound meets UL 94V-0 and J-STD-020 Level 1 moisture sensitivity.

Pin/Terminal	Circuit Role	Design Meaning
D1	N-Channel Drain	Connected to input rail (3.3V); carries full load current during Q2 off-time; routed over internal thermal pad.
S1	N-Channel Source	Common node with P-channel source (S2); forms synchronous rectifier output; tied to power ground plane.
G1	N-Channel Gate	Driven by PWM controller low-side output; requires <10.5nC charge for 4.5V turn-on; isolated from high dv/dt nodes.
D2	P-Channel Drain	Connected to output (1V); conducts during Q1 off-time; shares thermal pad with D1 for joint heat spreading.
S2	P-Channel Source	Internally bonded to S1; establishes common source node for both FETs; defines reference for gate drive timing.
G2	P-Channel Gate	Driven by PWM controller high-side output; negative swing to –4.5V required; benefits from low 6.7nC Qg for fast edge rates.

Key Features

Feature	Design Value
Complementary integration	Single-package N+P pair eliminates layout skew, reduces parasitic inductance, and guarantees matched thermal behavior between switches.
Low-profile package	0.6mm max height enables placement under low-clearance shields or beneath ASICs in space-constrained STB and router modules.
ESD protection	1.5kV HBM and 150V MM rating allows direct handling on production lines without special grounding protocols.
Lead-free & green compliance	Fully RoHS 3 compliant with <900ppm Br/Cl and <1000ppm Sb; satisfies environmental requirements for EU, China, and Japan markets.
Thermal performance	19°C/W R_θJC to exposed pad enables >1W dissipation with minimal PCB copper; validated on 1″×1″ 2oz FR-4 test board.

Applications

Ethernet Network Controller Power

DSL Modem Core Supply

Use Scenario: 3.3V input stepped down to 1.0V/3A for 10/100/1000BASE-T PHY and MAC ASICs in enterprise routers and managed switches.

IC Role / Device Role / Timing Role: Q2 (P-ch) acts as high-side control switch; Q1 (N-ch) functions as synchronous rectifier; duty cycle fixed at ~30%.

Use Value: 25mΩ R_DS(ON) minimizes I²R loss during 67% conduction period, achieving >92% efficiency at full load without external heatsinking.

Use Scenario: Compact 1V core supply for ADSL2+/VDSL2 line card processors in residential and business DSL gateways.

IC Role / Device Role / Timing Role: Dual-FET replaces discrete high-side P-MOS + low-side N-MOS; eliminates bootstrap capacitor and gate driver complexity.

Use Value: Integrated pairing reduces BOM count by two devices and PCB area by 40% versus discrete solutions while maintaining 1.5kV ESD robustness.

Set-Top Box SoC Regulation

Industrial Ethernet Node

Use Scenario: Point-of-load regulation for ARM-based media processors in HD/4K STBs operating in thermally constrained plastic enclosures.

IC Role / Device Role / Timing Role: Q1/Q2 operate in continuous conduction mode (CCM) at 1MHz switching frequency; gate drive synchronized to controller's dead-time logic.

Use Value: 0.6mm height prevents interference with stacked memory packages; 92°C/W R_θJA ensures <105°C junction temp at 45°C ambient.

Use Scenario: Reliable 1V supply for industrial-grade Ethernet PHYs in factory automation controllers exposed to –40°C to +85°C ambient.

IC Role / Device Role / Timing Role: Complementary pair handles 3A peak load with 125°C max T_J; body diode recovery (t_RR = 12–13.1ns) suppresses shoot-through risk.

Use Value: Specified R_DS(ON) over –55°C to +150°C enables stable efficiency across full industrial temperature range without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMC2038UFDB-7	Higher V_DSS: 20V/–20V; higher R_DS(ON): 38mΩ/105mΩ; same U-DFN2020-6 package.	Supports wider input range (up to 5V), but sacrifices 15% conduction efficiency at 3.3V input due to higher on-resistance.	Select when input rail may exceed 3.3V or require margin against transient overvoltage.
SI6926ADQ-T1-GE3	SO-8 package; separate N/P dies; R_DS(ON) 22mΩ/75mΩ; Q_g 12nC/8.5nC; no integrated ESD diodes.	Larger footprint (5×6mm vs. 2×2mm); requires external ESD protection; less suitable for ultra-dense routing near ASICs.	Choose if SO-8 hand-soldering or legacy footprint compatibility is required over size and integration.

Compared with DMC2038UFDB-7, DMC1028UFDB delivers superior efficiency at 3.3V input due to lower R_DS(ON) and smaller package; versus SI6926ADQ-T1-GE3, it offers 60% smaller area, integrated ESD protection, and matched thermal coupling-but requires U-DFN reflow expertise.

Availability

DMC1028UFDB is available at Aetrix Electronics and suitable for Ethernet network controllers, DSL modems, set-top boxes, and industrial Ethernet nodes requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for DMC1028UFDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DMC1028UFDB belongs to Diodes' high-efficiency power MOSFET product line, engineered specifically for space-constrained, high-current POL applications in networking and broadband infrastructure equipment.

FAQ

What is the recommended gate resistor value for DMC1028UFDB in a 1MHz synchronous buck converter?

A 1Ω gate resistor is validated in the datasheet for both Q1 and Q2 under 1MHz operation, balancing switching speed (t_r/t_f <10ns) and EMI suppression. Lower values increase dv/dt stress; higher values degrade efficiency above 500kHz. Layout must minimize gate loop inductance using short, wide traces.

Can DMC1028UFDB be used in a 5V-input buck converter?

No-Q1's 12V BVDSS provides only 2× margin over 5V input, risking avalanche failure during transients. The device is characterized and qualified for ≤3.3V nominal input (e.g., USB-powered NICs, STBs). For 5V systems, DMC2038UFDB-7 (20V/–20V) is the designated alternative.

How is thermal performance affected when the exposed pad is not soldered to PCB ground?

Leaving the thermal pad unconnected increases R_θJA from 92°C/W to >200°C/W, limiting usable current to <1.2A before exceeding 150°C junction temperature. Diodes specifies mandatory soldering to a ≥10mm² copper pour with ≥4 thermal vias (0.3mm diameter) for rated performance.

Does DMC1028UFDB include internal gate protection diodes, and how are they configured?

Yes-each MOSFET integrates a gate-protection diode: D1 protects Q1's gate (anode to G1, cathode to S1); D2 protects Q2's gate (anode to S2, cathode to G2). These clamp ESD events per HBM 1.5kV and prevent gate oxide rupture during hot-plug or layout-induced transients.

DMC1028UFDB-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel

FET Feature:: -

Drain to Source Voltage (Vdss):: 12V, 20V

Current - Continuous Drain (Id) @ 25°C:: 6A, 3.4A

Rds On (Max) @ Id, Vgs:: 25mOhm @ 5.2A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18.5nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds:: 787pF @ 6V

Power - Max:: 1.36W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: U-DFN2020-6 (Type B)

DMC1028UFDB-7 FAQ

1.How can I place an order for DMC1028UFDB-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC1028UFDB-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC1028UFDB-7 reliable?

The price and inventory of DMC1028UFDB-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC1028UFDB-7 is usually 5 days.

3.What payment methods are accepted for DMC1028UFDB-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC1028UFDB-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC1028UFDB-7?

DMC1028UFDB-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC1028UFDB-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC1028UFDB-7?

For technical support, including DMC1028UFDB-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC1028UFDB-7 requirements.

6.How does Aetrix verify that DMC1028UFDB-7 is sourced from the original manufacturer or authorized distributors?

All DMC1028UFDB-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC1028UFDB-7 meets industry standards.

7.What is the process for return or replacement of DMC1028UFDB-7?

All DMC1028UFDB-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMC1028UFDB-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC1028UFDB-7 part is unused and in its original packaging.

Return procedure for DMC1028UFDB-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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