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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMC1028UVT-13

Name: DMC1028UVT-13
Brand: Diodes Incorporated
SKU: DMC1028UVT-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMC1028UVT-13

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: DMC1028UVT-13.pdf

Description:: MOSFET N/P-CH 12V 6.1A TSOT26

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Product details

Overview

DMC1028UVT-13 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in TSOT26 package, integrating one N-channel (12V, 25mΩ @ 4.5V, 6.1A) and one P-channel (-20V, 80mΩ @ -4.5V, -3.5A) device on a single die. It delivers low R_DS(ON), fast switching (t_D(ON) = 4.6ns / 3.5ns), and ESD-protected gates for compact dual-rail power management in space-constrained DC-DC converters.

For engineers reviewing the DMC1028UVT-13 datasheet, DMC1028UVT-13 pinout, DMC1028UVT-13 application, or DMC1028UVT-13 equivalent, key selection criteria include verified dual-channel R_DS(ON) at 1.8V–4.5V gate drive, thermal resistance (R_θJA = 108°C/W with copper pad), and TSOT26 pin mapping for synchronous buck/boost stage implementation.

Technical Context

This dual MOSFET supports complementary switching topologies where the N-channel handles high-side or main switch duties and the P-channel serves as low-side or synchronous rectifier-enabling efficient bidirectional current control without external level-shifting circuitry. Its matched threshold voltages (V_GS(TH): +0.4–1.0V / -0.4–-1.0V) and low gate charge (Q_G = 10.5nC / 6.7nC) reduce drive loss and improve timing alignment.

The device operates across -55°C to +150°C with integrated gate protection diodes and body diodes rated for 1.4A forward current per channel. Its 18Ω R_θJC and 102°C/W transient thermal resistance (t < 5s) support pulsed operation up to 35A (N-ch) and -20A (P-ch) under controlled duty cycles.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	N-ch: 12V; P-ch: -20V - defines maximum blocking voltage in half-bridge or load-switch configurations
R_DS(ON)	N-ch: 25mΩ @ 4.5V; P-ch: 80mΩ @ -4.5V - determines conduction loss in 3.3V/5V logic-driven power stages
I_D (T_A=25°C)	N-ch: 6.1A; P-ch: -3.5A - sets continuous current capability for PCB-mounted 0.8W dissipation
Q_G	N-ch: 10.5nC; P-ch: 6.7nC - directly impacts gate driver sizing and switching loss in 1–2MHz DC-DC designs
C_ISS	N-ch: 787pF; P-ch: 576pF - influences gate drive impedance matching and EMI filtering requirements
t_R/t_F	N-ch: 9.4ns/3.7ns; P-ch: 3.6ns/12.7ns - enables precise dead-time control in synchronous rectification
R_θJA	108°C/W (with 1"² copper) - establishes thermal derating curve for ambient temperatures up to 70°C

Pinout & Package

Package: TSOT26 - ultra-thin surface-mount package (2.90 × 1.60 × 0.60 mm) with matte tin-annealed copper leadframe, UL 94V-0 molding compound, and moisture sensitivity level 3.

Pin/Terminal	Circuit Role	Design Meaning
1 (D1)	N-channel drain	Main current path for high-side switching; connected to input rail in buck topology
2 (S1)	N-channel source	Reference node for N-ch gate drive; tied to switch node in synchronous rectifier configuration
3 (G1)	N-channel gate	Control input requiring 0.4–1.0V threshold; protected by internal gate diode
4 (D2)	P-channel drain	Current return path for P-ch; connected to output rail or ground in low-side switch
5 (S2)	P-channel source	Common source node shared with N-ch source in complementary pair layout
6 (G2)	P-channel gate	Inverted control input (V_GS(TH) = -0.4 to -1.0V); enables direct logic-level drive without inversion

Key Features

Feature	Design Value
Complementary channel pairing	Single-package integration of matched N/P MOSFETs eliminates layout skew and reduces parasitic inductance in half-bridge nodes
Low R_DS(ON) at 1.8V drive	N-ch: 40mΩ; P-ch: 140mΩ - enables operation from 1.8V microcontroller GPIOs without level shifters
ESD-protected gate structure	HBM rating ≥2kV - prevents gate oxide damage during board assembly and handling without external TVS
Low input capacitance	C_ISS = 787pF (N) / 576pF (P) - minimizes gate drive power and improves efficiency above 500kHz switching frequency
Green packaging	Halogen- and antimony-free, RoHS 3 compliant - meets automotive and industrial environmental compliance mandates

Applications

LED Backlighting

USB-C Power Delivery

Use Scenario: Driving parallel LED strings in thin-profile displays using PWM dimming at 1–5kHz.

IC Role / Device Role / Timing Role: N-channel acts as high-side constant-current switch; P-channel provides reverse-polarity protection and sink path during off-cycle.

Use Value: 25mΩ R_DS(ON) limits conduction loss to <150mW at 6A, enabling thermal design without heatsink in 3mm-height bezels.

Use Scenario: Bidirectional 20V/3A power path control in USB-C port controllers with source/sink role swapping.

IC Role / Device Role / Timing Role: Complementary pair implements ideal diode OR-ing and reverse-current blocking with <10ns propagation delay matching.

Use Value: Matched t_D(OFF) (15.7ns N / 20.8ns P) ensures <5ns timing skew, preventing shoot-through during role swap transitions.

Portable DC-DC Converters

Industrial Sensor Power Switching

Use Scenario: 3.3V/5V step-down converter in battery-powered IoT nodes with 1.2MHz switching frequency.

IC Role / Device Role / Timing Role: N-channel functions as main switch; P-channel serves as synchronous rectifier in buck topology with zero-voltage turn-on.

Use Value: Combined Q_G < 18nC allows full switching cycle within 833ns period, supporting >95% duty cycle at light load.

Use Scenario: Isolated 24V sensor supply enable/disable with reverse-polarity and overcurrent protection.

IC Role / Device Role / Timing Role: P-channel controls V_OUT rail; N-channel monitors current via source sensing and triggers shutdown via gate feedback.

Use Value: 80mΩ P-ch R_DS(ON) yields <200mV drop at 2.5A, preserving regulation margin while enabling 100μs fault response.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMC2038UVT-7	Higher V_DSS (20V/-20V), higher R_DS(ON) (35mΩ/-100mΩ), same TSOT26 footprint	Better suited for 12V input systems requiring wider voltage margin; less efficient at 5V drive	Select when system input exceeds 12V or requires enhanced avalanche ruggedness
Si2301DS-T1-GE3	Single P-channel only, no integrated N-ch; R_DS(ON) = 90mΩ @ -4.5V, lower I_D (-2.7A)	Requires external N-ch MOSFET and level shifter; increases board area and timing complexity	Choose only if discrete channel optimization or cost-driven BOM simplification outweighs integration benefits

Compared with DMC2038UVT-7 and Si2301DS-T1-GE3, DMC1028UVT-13 uniquely balances 12V/20V complementary blocking, sub-30mΩ N-ch conduction, and true single-package timing alignment-making it optimal for compact, high-frequency synchronous converters where layout parasitics must be minimized.

Availability

DMC1028UVT-13 is available at Aetrix Electronics and suitable for LED backlighting, USB-C power delivery, and portable DC-DC converters requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle availability.

Supply support for DMC1028UVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.

The DMC1028UVT belongs to Diodes' advanced small-signal MOSFET product line, engineered specifically for space-constrained, high-frequency power conversion where complementary switching, low gate charge, and robust thermal performance are critical.

FAQ

What is the maximum continuous drain current for each channel at 70°C ambient?

At T_A = +70°C, the N-channel supports 4.7A and the P-channel supports -2.7A under steady-state conditions with recommended PCB layout (2oz copper, 1"² pad). This derating reflects thermal limits imposed by the 108°C/W R_θJA and 0.8W total power dissipation rating.

Does DMC1028UVT-13 require external gate resistors for 1MHz switching?

Yes-gate resistance values between 1Ω and 5Ω are recommended to dampen ringing caused by the 787pF/576pF C_ISS and PCB trace inductance. The internal gate resistance (4.8Ω N-ch / 15Ω P-ch) alone is insufficient to suppress oscillation at 1MHz; external series resistors ensure clean turn-on/turn-off edges.

Can the body diodes be used for synchronous rectification without external Schottky diodes?

Yes-the N-channel body diode has V_SD = 0.7–1.2V and t_RR = 12.0ns; the P-channel body diode has V_SD = -0.7 to -1.2V and t_RR = 13.1ns. These parameters support synchronous rectification up to 2MHz in buck converters, provided gate timing avoids cross-conduction.

Is the TSOT26 package compatible with standard reflow profiles for lead-free soldering?

Yes-the TSOT26 package uses matte tin-annealed copper leadframe and complies with JEDEC J-STD-020 moisture sensitivity level 3. It is qualified for standard IPC/JEDEC lead-free reflow profiles (peak 260°C, 60s above 217°C), with no special pre-bake required when stored per MSL guidelines.

DMC1028UVT-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel Complementary

FET Feature:: -

Drain to Source Voltage (Vdss):: 12V, 20V

Current - Continuous Drain (Id) @ 25°C:: 6.1A (Ta), 3.5A (Ta)

Rds On (Max) @ Id, Vgs:: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18.5nC @ 8V, 11.5nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds:: 787pF @ 6V, 576pF @ 10V

Power - Max:: 800mW

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TSOT-26

DMC1028UVT-13 FAQ

1.How can I place an order for DMC1028UVT-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC1028UVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC1028UVT-13 reliable?

The price and inventory of DMC1028UVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC1028UVT-13 is usually 5 days.

3.What payment methods are accepted for DMC1028UVT-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC1028UVT-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC1028UVT-13?

DMC1028UVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC1028UVT-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC1028UVT-13?

For technical support, including DMC1028UVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC1028UVT-13 requirements.

6.How does Aetrix verify that DMC1028UVT-13 is sourced from the original manufacturer or authorized distributors?

All DMC1028UVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC1028UVT-13 meets industry standards.

7.What is the process for return or replacement of DMC1028UVT-13?

All DMC1028UVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC1028UVT-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC1028UVT-13 part is unused and in its original packaging.

Return procedure for DMC1028UVT-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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