Diodes Incorporated DMC1028UVT-7
- Part No.:
- DMC1028UVT-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMC1028UVT-7.pdf
- Description:
- MOSFET N/P-CH 12V 6.1A TSOT26
- Quantity:
- Payment:

- Shipping:

Inventory:3,106
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Product details
Overview
DMC1028UVT from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single TSOT26 package, integrating an N-channel (12 V, 25 mΩ @ 4.5 V) and P-channel (–20 V, 80 mΩ @ –4.5 V) device for bidirectional power control. It delivers 6.1 A continuous drain current (Q1) and –3.5 A (Q2), with ESD-protected gates and low input capacitance (787 pF / 576 pF), enabling high-efficiency DC-DC converters and backlighting circuits.
For engineers reviewing the DMC1028UVT datasheet, DMC1028UVT pinout, DMC1028UVT application, or DMC1028UVT equivalent, key selection criteria include verified RDS(ON) at low gate drive voltages (1.5–4.5 V), body diode recovery performance (tRR = 12.0 / 13.1 ns), thermal resistance (RθJA = 108 °C/W with copper pad), and TSOT26 pin mapping for synchronous buck/boost topologies.
Technical Context
This dual MOSFET supports complementary switching in compact DC-DC regulators where space-constrained layouts require integrated N+P channel pairs. Its low threshold voltages (VGS(TH) = 0.4–1.0 V for Q1; –0.4 to –1.0 V for Q2) enable operation with 1.8 V and 2.5 V logic-level controllers, while fast switching (tD(ON) = 4.6 ns / 3.5 ns) minimizes conduction and transition losses.
The device features separate gate protection diodes per channel, independent body diodes with characterized reverse recovery (QRR = 1.8 nC / 3.9 nC), and matched dynamic parameters optimized for synchronous rectification. Thermal design is constrained by its 1.2 W power dissipation rating on a 1-inch² copper pad and junction-to-case resistance of 18 °C/W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | N-Channel: 12 V; P-Channel: –20 V - defines maximum blocking voltage in half-bridge or level-shifting configurations |
| RDS(ON) | 25 mΩ @ 4.5 V (Q1), 80 mΩ @ –4.5 V (Q2) - determines conduction loss at nominal gate drive in synchronous buck stages |
| ID (continuous) | 6.1 A (Q1), –3.5 A (Q2) at TA = +25°C - sets maximum steady-state load current capability per channel |
| CISS | 787 pF (Q1), 576 pF (Q2) - impacts gate drive strength requirements and switching speed under given driver impedance |
| tRR | 12.0 ns (Q1), 13.1 ns (Q2) - critical for minimizing shoot-through risk and reverse recovery loss in synchronous rectifiers |
| RθJA | 108 °C/W (with 1-inch² copper) - defines temperature rise per watt, guiding heatsinking and layout decisions |
| Package | TSOT26 - 6-pin surface-mount package with exposed thermal pad; footprint compatible with JEDEC MO-220 variants |
Pinout & Package
TSOT26 is a 6-pin, thermally enhanced plastic package with 0.95 mm pitch and exposed thermal pad. Pin 1 is marked with a dot; orientation follows standard top-view labeling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | N-Channel Drain | Main current path for high-side N-MOSFET; connects to input rail in buck topology |
| 2 (S1) | N-Channel Source | Reference node for Q1 gate drive; tied to switch node in synchronous rectifier configuration |
| 3 (G1) | N-Channel Gate | Control terminal for Q1; requires ≥1.5 V drive for turn-on; ESD-protected |
| 4 (D2) | P-Channel Drain | Main current path for low-side P-MOSFET; connects to output node in buck configuration |
| 5 (S2) | P-Channel Source | Reference node for Q2 gate drive; typically connected to VOUT or ground depending on topology |
| 6 (G2) | P-Channel Gate | Control terminal for Q2; driven negative relative to S2; ESD-protected |
Key Features
| Feature | Design Value |
|---|---|
| Complementary N+P integration | Single TSOT26 package replaces discrete N- and P-MOSFETs, reducing PCB area by >40% vs. dual-SOT23 solution |
| Low-voltage gate drive support | Turn-on at VGS = 1.8 V (Q1) and –1.5 V (Q2) enables direct interface with 1.8 V/2.5 V microcontrollers and PMICs |
| ESD-protected gates | HBM rating ≥2 kV per channel - eliminates need for external gate protection in most consumer-grade applications |
| Optimized body diode recovery | QRR = 1.8 nC (Q1), 3.9 nC (Q2) - reduces switching loss and voltage spikes during dead-time conduction |
| Green RoHS-compliant construction | Halogen- and antimony-free molding compound (Br+Cl <1500 ppm, Sb <1000 ppm); matte tin finish on Cu leadframe |
Applications
| LED Backlight Driver | Synchronous Buck Converter |
|---|---|
Use Scenario: Driving white LED strings in portable displays using PWM dimming and constant-current regulation. IC Role / Device Role / Timing Role: Q1 acts as high-side PWM switch; Q2 serves as synchronous rectifier during off-cycle to replace Schottky diode. Use Value: Achieves >92% efficiency at 5 V input/3.3 V output due to combined RDS(ON) of 25 mΩ + 80 mΩ and fast tF = 3.7 ns (Q2). |
Use Scenario: Point-of-load (POL) conversion in FPGA or SoC power rails requiring tight transient response and low quiescent current. IC Role / Device Role / Timing Role: Q1 functions as main power switch; Q2 operates as controlled low-side switch in non-inverting buck topology. Use Value: Enables 500 kHz switching with <10 ns propagation delay matching (tD(ON) = 4.6 ns / 3.5 ns), minimizing dead-time loss. |
| USB-C Power Delivery Sink | Industrial Sensor Node Power Management |
Use Scenario: Managing 5–20 V input range from USB-C PD source to regulated 3.3 V supply for host MCU and peripherals. IC Role / Device Role / Timing Role: Q1 handles high-side switching; Q2 provides reverse polarity protection and active discharge path. Use Value: Leverages –20 V BVDSS and –1.5 V VGS(TH) to block reverse current and enable fast shutdown (<100 ns) during fault events. |
Use Scenario: Battery-powered wireless sensor nodes requiring ultra-low standby current and efficient wake-up sequencing. IC Role / Device Role / Timing Role: Q1 controls main system power rail; Q2 isolates backup RTC/sensor domain during deep-sleep mode. Use Value: Achieves <1 μA total leakage (IDSS ≤ ±1.0 μA per channel) and 0.013 g weight - critical for multi-year battery life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038UVT-7 | Higher VDSS: 20 V (Q1), –20 V (Q2); higher RDS(ON): 38 mΩ / 105 mΩ @ 4.5 V | Better suited for 12–15 V input systems; less optimal below 5 V due to higher threshold | Select when input voltage exceeds 10 V and board space allows same TSOT26 footprint |
| SI6926ADQ-T1-GE3 | Same TSOT26; lower RDS(ON) (16 mΩ / 50 mΩ) but no ESD protection; higher CISS (920 pF / 680 pF) | Requires external gate protection; better for high-frequency (>1 MHz) designs where Qg dominates loss | Choose only if gate driver can supply >1.5 A peak and layout includes 100 pF gate resistors |
Compared with DMC2038UVT-7 and SI6926ADQ-T1-GE3, the DMC1028UVT offers the lowest gate drive voltage compatibility (1.5 V), integrated ESD protection, and balanced RDS(ON)/QG for sub-5 V DC-DC stages - making it optimal for portable and USB-powered systems.
Availability
DMC1028UVT is available at Aetrix Electronics and suitable for LED backlight drivers, synchronous buck converters, USB-C power delivery sinks, and industrial sensor node power management requiring stable component supply across production lifecycles.
Supply support for DMC1028UVT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
The DMC1028UVT belongs to Diodes' advanced logic-level MOSFET product line, engineered specifically for space-constrained, high-efficiency power conversion in portable and battery-operated electronics.
FAQ
What is the maximum safe operating junction temperature for DMC1028UVT?
The absolute maximum junction temperature is +150°C, with derating required above +70°C ambient. At TA = +70°C, continuous ID drops to 4.7 A (Q1) and –2.7 A (Q2) per datasheet Note 6. Thermal design must maintain TJ ≤ 135°C for 10-year reliability in commercial applications.
Can DMC1028UVT be used in a synchronous boost converter?
Yes - Q2 (P-channel) serves as the main switch, while Q1 (N-channel) functions as the synchronous rectifier. The –20 V BVDSS and –3.5 A ID rating support output voltages up to 18 V. Layout must ensure gate drive referenced to Q2's source, and dead time must exceed 20 ns to prevent shoot-through.
Does DMC1028UVT require external gate resistors for EMI control?
Not strictly required, but recommended: 5–10 Ω series gate resistors reduce ringing caused by QGD (2.9 nC / 2.0 nC) interacting with layout inductance. Measured tR/tF values (9.4 ns / 3.6 ns) indicate moderate edge rates; adding resistance improves EMC without compromising efficiency above 200 kHz.
Is the TSOT26 package thermally enhanced, and how should the exposed pad be handled?
Yes - the TSOT26 package includes an exposed thermal pad (pin 0) that must be soldered to a minimum 1-inch² copper area for rated 1.2 W dissipation. The pad is electrically isolated and should be connected to source potential (S1/S2) or ground via multiple vias to inner layers. Thermal relief patterns are not recommended per Diodes' layout guidelines.
DMC1028UVT-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel Complementary
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 12V, 20V
- Current - Continuous Drain (Id) @ 25°C:
- 6.1A (Ta), 3.5A (Ta)
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18.5nC @ 8V, 11.5nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 787pF @ 6V, 576pF @ 10V
- Power - Max:
- 800mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMC1028UVT-7 FAQ
1.How can I place an order for DMC1028UVT-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMC1028UVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMC1028UVT-7 reliable?
The price and inventory of DMC1028UVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC1028UVT-7 is usually 5 days.
3.What payment methods are accepted for DMC1028UVT-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC1028UVT-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMC1028UVT-7?
DMC1028UVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMC1028UVT-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMC1028UVT-7?
For technical support, including DMC1028UVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC1028UVT-7 requirements.
6.How does Aetrix verify that DMC1028UVT-7 is sourced from the original manufacturer or authorized distributors?
All DMC1028UVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC1028UVT-7 meets industry standards.
7.What is the process for return or replacement of DMC1028UVT-7?
All DMC1028UVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMC1028UVT-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMC1028UVT-7 part is unused and in its original packaging.
Return procedure for DMC1028UVT-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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