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Diodes Incorporated DMC1029UFDB-13
- Part No.:
- DMC1029UFDB-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMC1029UFDB-13.pdf
- Description:
- MOSFET N/P-CH 12V 5.6A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:5,439
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Product details
Overview
DMC1029UFDB-13 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single U-DFN2020-6 (Type B) package, integrating an N-channel (12V, 29mΩ @ 4.5V) and P-channel (-12V, 61mΩ @ -4.5V) device for bidirectional power control. It delivers low on-resistance, fast switching, and operates across -55°C to +150°C junction temperature, enabling compact load switch and portable power adaptor designs.
For engineers reviewing the DMC1029UFDB-13 datasheet, DMC1029UFDB-13 pinout, DMC1029UFDB-13 application, or DMC1029UFDB-13 equivalent, key selection criteria include dual-channel RDS(ON) at low gate voltages (1.5V–4.5V), thermal resistance (RθJA = 91°C/W), input capacitance (Ciss ≈ 914/915 pF), and lead-free, halogen-free U-DFN2020-6 packaging.
Technical Context
This dual MOSFET implements complementary logic-level switching with matched gate threshold voltages (VGS(TH): +0.4–1.0V for Q1, -0.4–-1.0V for Q2), enabling direct drive from 1.8V/2.5V/3.3V microcontrollers without level-shifting. Its low-profile (0.6mm max height) and thermally enhanced U-DFN2020-6 package support high-density PCB layouts in space-constrained applications.
The device features integrated body diodes with forward voltage VSD ≤ 1.2V (Q1) and ≤ -1.2V (Q2) at ±1A, and exhibits controlled dynamic characteristics: Qg = 10.5nC (N-ch) / 10.7nC (P-ch) at rated VGS, tF = 4.1ns (Q1) / 26.4ns (Q2), supporting efficient synchronous rectification and PWM-based power management.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 12V (N-ch), -12V (P-ch): Supports 12V rail switching with 20% margin against transients. |
| RDS(ON) max | 29mΩ @ 4.5V (Q1), 61mΩ @ -4.5V (Q2): Enables <150mW conduction loss at 5A/3.8A DC current. |
| ID max | 5.6A (Q1), -3.8A (Q2) at 25°C: Sustains continuous load currents typical of USB-C PD and battery protection circuits. |
| Ciss | 914pF (Q1), 915pF (Q2): Low input capacitance reduces gate drive power and improves switching speed. |
| RθJA | 91°C/W (steady state): Requires minimal copper area (1"×1" 2oz FR-4) for thermal compliance in ambient up to 70°C. |
| Package | U-DFN2020-6 (Type B): 2.0×2.0×0.6mm footprint enables ultra-compact board layout and automated assembly. |
| Operating TJ | -55°C to +150°C: Qualified for industrial and extended-temperature portable electronics environments. |
Pinout & Package
U-DFN2020-6 (Type B) package with exposed thermal pad (non-electrical), 0.65mm pitch, and NiPdAu-plated terminals solderable per MIL-STD-202 Method 208.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | N-channel drain | Main current path for high-side N-MOSFET; connects to input supply rail in load switch topology. |
| S1 | N-channel source | Reference node for N-MOSFET; tied to load or ground depending on configuration (high-side switch). |
| G1 | N-channel gate | Logic-level control input; accepts 1.5V–4.5V drive for full enhancement with low gate charge (10.5nC). |
| D2 | P-channel drain | Main current path for low-side P-MOSFET; commonly connected to load output in back-to-back configuration. |
| S2 | P-channel source | Reference node for P-MOSFET; typically tied to system ground or shared with N-MOSFET source in dual-switch setups. |
| G2 | P-channel gate | Inverted logic control input; driven low (≤ -1.5V) to turn on; gate charge 10.7nC supports fast turn-off. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary dual-channel integration | Single-package N+P pair eliminates inter-device timing skew and reduces PCB area by >40% vs discrete solutions. |
| Low RDS(ON) at 1.5V VGS | 65mΩ (Q1) / 210mΩ (Q2) enables functional switching from 1.8V I/O domains without external boost circuitry. |
| Low-profile U-DFN2020-6 | 0.6mm max height allows use in slim portable devices (e.g., Bluetooth earbuds, wearables) with strict Z-axis constraints. |
| Halogen- and antimony-free "Green" construction | <900ppm Br, <900ppm Cl, <1000ppm Sb meets stringent environmental compliance for global consumer electronics. |
| Moisture sensitivity Level 1 | No baking required prior to reflow; compatible with standard J-STD-020 handling and assembly processes. |
Applications
| USB Power Delivery Switching | Smartphone Battery Protection |
|---|---|
|
Use Scenario: Bidirectional power path control between USB-C port and battery during charging/discharging cycles. IC Role / Device Role / Timing Role: Dual MOSFET acts as back-to-back switch to block reverse current and enforce directionality under USB PD 3.0 protocols. Use Value: RDS(ON) values ensure <120mW total conduction loss at 3A, extending battery runtime while maintaining thermal safety in 5mm² board area. |
Use Scenario: Overvoltage/overcurrent protection circuit isolating Li-ion battery from system load during fault conditions. IC Role / Device Role / Timing Role: N-channel handles charge path; P-channel manages discharge path; both respond within <25ns to protection IC signals. Use Value: Matched gate thresholds enable coordinated turn-on/turn-off, preventing shoot-through; low Ciss ensures fast response to fault detection pulses. |
| Portable Power Adaptor Output Stage | IoT Sensor Node Load Management |
|
Use Scenario: Secondary-side synchronous rectification and output load switching in 5–12V wall adapters for tablets and accessories. IC Role / Device Role / Timing Role: Complementary pair replaces discrete diode + MOSFET, reducing voltage drop and improving efficiency at light loads. Use Value: 29mΩ/61mΩ RDS(ON) cuts conduction loss by 65% vs Schottky diode, achieving >92% efficiency at 2A output with minimal heatsinking. |
Use Scenario: Power gating of RF transceiver, MCU sleep mode peripherals, and sensor arrays in battery-powered edge nodes. IC Role / Device Role / Timing Role: N-MOSFET switches VCC to active blocks; P-MOSFET controls ground return for isolated shutdown. Use Value: 1.5V logic compatibility allows direct GPIO control; 0.6mm profile fits sub-10mm² modules; leakage <1μA preserves multi-year battery life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LVT-7 | Higher RDS(ON) (42mΩ/85mΩ @ 4.5V), larger U-DFN2030-6 package (2.0×3.0mm), higher Qg (13.5nC/14.2nC). | Better suited for higher-current (≥6A) but less space-constrained designs; not optimal for <2mm² footprints. | Select when thermal margin >15°C is available and board area permits 50% larger footprint. |
| SI6926ADQ-T1-GE3 | Lower RDS(ON) (22mΩ/48mΩ @ 4.5V), same U-DFN2020-6 package, but higher Ciss (1100pF/1200pF) and no 1.5V VGS characterization. | Preferred for efficiency-critical 3.3V/5V systems where gate drive voltage ≥2.5V is guaranteed. | Choose for maximum efficiency above 2.5V drive; avoid in 1.8V microcontroller interfaces due to unverified turn-on behavior. |
Compared with DMC1029UFDB-13, DMC2038LVT-7 trades compactness for higher current headroom, while SI6926ADQ-T1-GE3 prioritizes lower conduction loss at the expense of gate drive sensitivity and dynamic losses-making DMC1029UFDB-13 optimal for size- and low-voltage–constrained portable power designs.
Availability
DMC1029UFDB-13 is available at Aetrix Electronics and suitable for USB-C power delivery switching, smartphone battery protection, and portable power adaptor output stages requiring stable component supply, consistent parametric performance, and RoHS-compliant sourcing.
Supply support for DMC1029UFDB-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and computing markets.
DMC1029UFDB-13 belongs to Diodes' Logic-Level Complementary MOSFET product line, engineered specifically for space-constrained, battery-powered applications demanding low-voltage gate drive, minimal conduction loss, and robust thermal performance in miniature packages.
FAQ
What is the maximum continuous drain current for each channel at 70°C ambient?
At TA = +70°C, the N-channel supports 4.4A and the P-channel supports -3.0A under steady-state conditions on a 1"×1" FR-4 PCB with 2oz copper. These derated values reflect thermal limits imposed by RθJA = 91°C/W and maximum junction temperature of +150°C. Pulse operation extends current capability to 7.2A (Q1) and -5.0A (Q2) for durations under 5 seconds.
Can DMC1029UFDB-13 be used in a back-to-back configuration for AC blocking?
Yes-the complementary N+P structure supports true bidirectional blocking when configured back-to-back (D1–S2 tied, S1 and D2 as terminals). With VDSS = ±12V and body diode VSD ≤ ±1.2V, it blocks up to ±10.8V AC signals while limiting forward conduction loss. Gate drive must independently control G1 and G2 to prevent simultaneous conduction during polarity transitions.
Is the U-DFN2020-6 (Type B) package thermally enhanced?
No-the package lacks an exposed thermal pad; heat dissipation relies solely on copper traces connected to pins D1, D2, S1, and S2. The specified RθJA = 91°C/W assumes a 1"×1" 2oz copper pad per datasheet test condition. For improved thermal performance, PCB layout must maximize copper area under all six terminals and use multiple vias to inner-layer ground planes.
Does DMC1029UFDB-13 meet AEC-Q101 requirements for automotive use?
No-this part is not qualified to AEC-Q101. While it shares the same U-DFN2020-6 package and process technology as automotive-grade variants, Diodes Incorporated explicitly states that automotive qualification (PPAP, IATF 16949 manufacturing, AEC-Q101 stress testing) requires separate part numbering and documentation. Customers needing automotive compliance must contact Diodes directly for qualified alternatives.
DMC1029UFDB-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 12V
- Current - Continuous Drain (Id) @ 25°C:
- 5.6A, 3.8A
- Rds On (Max) @ Id, Vgs:
- 29mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19.6nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 914pF @ 6V
- Power - Max:
- 1.4W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMC1029UFDB-13 FAQ
1.How can I place an order for DMC1029UFDB-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMC1029UFDB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMC1029UFDB-13 reliable?
The price and inventory of DMC1029UFDB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC1029UFDB-13 is usually 5 days.
3.What payment methods are accepted for DMC1029UFDB-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC1029UFDB-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMC1029UFDB-13?
DMC1029UFDB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMC1029UFDB-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMC1029UFDB-13?
For technical support, including DMC1029UFDB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC1029UFDB-13 requirements.
6.How does Aetrix verify that DMC1029UFDB-13 is sourced from the original manufacturer or authorized distributors?
All DMC1029UFDB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC1029UFDB-13 meets industry standards.
7.What is the process for return or replacement of DMC1029UFDB-13?
All DMC1029UFDB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC1029UFDB-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMC1029UFDB-13 part is unused and in its original packaging.
Return procedure for DMC1029UFDB-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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