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Diodes Incorporated DMC1030UFDB-13
- Part No.:
- DMC1030UFDB-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMC1030UFDB-13.pdf
- Description:
- MOSFET N/P-CH 12V 5.1A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,192
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Product details
Overview
DMC1030UFDB from Diodes Incorporated is a complementary-pair enhancement-mode MOSFET in a single U-DFN2020-6 (Type B) package, integrating an N-channel (12V, 34mΩ @ 4.5V, 5.1A) and P-channel (-12V, 59mΩ @ -4.5V, -3.9A) device for bidirectional load switching in space-constrained portable power adaptors and battery-powered systems.
For engineers reviewing the DMC1030UFDB datasheet, DMC1030UFDB pinout, DMC1030UFDB application, or DMC1030UFDB equivalent, this dual MOSFET supports low-voltage logic-level drive down to 1.5V for both channels, delivers <10ns turn-on delay and <32ns turn-off delay, and maintains stable RDS(ON) across -55°C to +150°C junction temperature range - critical for thermal-aware power management design.
Technical Context
This dual MOSFET implements independent gate control for N- and P-channel devices with ESD-protected gates (±8V VGSS) and integrated body diodes. Its U-DFN2020-6 (Type B) footprint enables high-density PCB layout while maintaining 92°C/W steady-state thermal resistance.
The device features matched threshold voltages (VGS(TH): 0.4–1.0V for Q1, -0.4 to -1.0V for Q2), low input capacitance (Ciss: ~1000pF per channel), and gate charge values optimized for fast switching at 4.5V drive - enabling efficient synchronous rectification and reverse-current blocking in compact DC-DC converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | N-ch: 12V; P-ch: -12V - supports dual-rail 12V systems with reverse-polarity protection capability |
| RDS(ON) max | N-ch: 34mΩ @ 4.5V; P-ch: 59mΩ @ -4.5V - enables ≤170mW conduction loss at 5A load current |
| ID max | N-ch: 5.1A; P-ch: -3.9A - sufficient for USB-C PD 20W and portable charger output stages |
| Qg | N-ch: 12.2nC; P-ch: 13nC - allows clean 1MHz switching with <1Ω gate driver impedance |
| tD(OFF) | N-ch: 18.8ns; P-ch: 30.7ns - ensures minimal shoot-through risk in half-bridge configurations |
| RθJA | 92°C/W (steady state) - requires minimal copper area for thermal management on standard FR-4 |
| Ciss | N-ch: 1003pF; P-ch: 1028pF - reduces gate drive power and EMI in high-frequency SMPS |
Pinout & Package
Package: U-DFN2020-6 (Type B), 2.0mm × 2.0mm × 0.6mm profile, NiPdAu-plated terminals, JEDEC Level 1 moisture sensitivity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D1) | N-channel drain | Main current path for high-side N-MOSFET; connected to input rail in load switch topology |
| Pin 2 (S1) | N-channel source | Reference node for N-MOSFET; ties to common ground or output node depending on configuration |
| Pin 3 (G1) | N-channel gate | Logic-level control input; ESD-protected, compatible with 1.5V–4.5V microcontroller GPIO |
| Pin 4 (S2) | P-channel source | Connected to input rail in high-side P-MOSFET load switch; enables reverse-current blocking |
| Pin 5 (G2) | P-channel gate | Inverted control node; driven low to enable P-MOSFET; requires level-shifting for active-high logic |
| Pin 6 (D2) | P-channel drain | Output node for P-MOSFET; used for low-side switching or back-to-back configuration with Q1 |
Key Features
| Feature | Design Value |
|---|---|
| Complementary dual-channel integration | Reduces board area by >40% vs. discrete N+P MOSFETs; eliminates interconnect inductance in load-switch paths |
| Low-profile 0.6mm max height | Enables ultra-thin designs in wearables and dongles where Z-height is constrained to <1.0mm |
| ESD-protected gate structure | Withstands ±2kV HBM per JESD22-A114 - eliminates need for external gate protection in handheld assembly lines |
| Lead-free & halogen-free "Green" construction | Meets RoHS 3 (2015/863/EU) and IEC 61249-2-21 standards; <900ppm Br/Cl, <1000ppm Sb |
| JEDEC-qualified high-reliability | Qualified per AEC-Q stress test definitions for extended lifetime in industrial temperature cycling (-55°C to +150°C) |
Applications
| USB-C Power Delivery Input Protection | Smart Battery Pack Protection Circuit |
|---|---|
|
Use Scenario: Preventing reverse current flow and overvoltage damage when connecting third-party chargers to portable electronics. IC Role / Device Role: Dual-channel load switch providing forward conduction (Q1) and reverse-blocking (Q2) in back-to-back configuration. Use Value: Achieves <10μA quiescent current in off-state and <50mΩ total path resistance in on-state - extending battery runtime and ensuring safe hot-plug operation. |
Use Scenario: Isolating battery cells during charging/discharging cycles to prevent over-discharge and thermal runaway. IC Role / Device Role: Bidirectional current control element in battery management system (BMS) front-end stage. Use Value: Enables precise 1.5V logic-level enable/disable of both charge and discharge paths without external level shifters - simplifying MCU interface. |
| Portable Power Adaptor Output Stage | Industrial Sensor Node Power Sequencing |
|
Use Scenario: Regulating 5V/9V/12V output rails in compact wall adapters with dynamic load step response. IC Role / Device Role: High-efficiency synchronous rectifier and output OR-ing switch. Use Value: Delivers <92% efficiency at 3A load due to low RDS(ON) and fast tF (<5ns for Q1), reducing heat sink requirements. |
Use Scenario: Controlling power-up sequence of RF transceiver, MCU, and analog sensor subsystems in wireless IoT nodes. IC Role / Device Role: Independent rail enable switch for multi-voltage domain power management. Use Value: Supports staggered startup with <100ns timing resolution via separate G1/G2 control - preventing inrush current peaks exceeding 2A. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary dual-MOSFET load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LVT-7 | Higher voltage rating (20V), larger RDS(ON) (42mΩ/75mΩ), same U-DFN2020-6 package | Better suited for 15V industrial rails but less efficient at 12V due to higher conduction loss | Select when system input may exceed 12.6V or require wider VDSS margin |
| SiA913EDJ-T1-GE3 | Asymmetric channel sizing (N-ch 6.5A/30mΩ, P-ch 4.5A/60mΩ); slightly higher Ciss (1150pF) | Optimized for unidirectional high-current loads; less balanced for true bidirectional use | Prefer when primary current direction is fixed and peak N-ch current exceeds 5.1A |
Compared with DMC1030UFDB, DMC2038LVT-7 trades lower RDS(ON) for higher voltage headroom, while SiA913EDJ-T1-GE3 sacrifices channel symmetry for higher N-ch current capacity - making DMC1030UFDB optimal for balanced 12V bidirectional switching where thermal density and logic-level drive are critical.
Availability
DMC1030UFDB is available at Aetrix Electronics and suitable for USB-C power delivery input protection, smart battery pack protection circuits, and portable power adaptor output stages requiring stable component supply and full traceability through production ramp.
Supply support for DMC1030UFDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management solutions for consumer, industrial, and automotive markets.
The DMC1030UFDB belongs to Diodes' Ultra-Small Signal and Power MOSFET product line, designed specifically for miniaturized, thermally constrained power switches in portable and battery-operated equipment.
FAQ
What is the maximum continuous drain current for each channel at 70°C ambient?
At TA = +70°C, the N-channel supports 4.1A and the P-channel supports -3.1A under steady-state conditions with 1"×1" FR-4 PCB and 2oz copper. These values reflect derating from the +25°C ratings (5.1A and -3.9A) due to thermal resistance limitations and must be validated against actual board layout and airflow.
Can DMC1030UFDB be used in a back-to-back configuration for reverse polarity protection?
Yes - the complementary N+P pair enables true bidirectional blocking. With both gates tied together and driven high, Q1 conducts forward current while Q2 blocks reverse current. The matched |VGS(TH)| (0.4–1.0V) ensures simultaneous turn-on and avoids shoot-through during transition.
Is the U-DFN2020-6 (Type B) package compatible with standard reflow profiles?
Yes - the package is rated for JEDEC Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C, 60s above 217°C). Its NiPdAu finish ensures reliable solder wetting on OSP- or ENIG-finished PCBs without voiding or dewetting issues.
Does DMC1030UFDB include internal gate protection diodes?
Yes - the datasheet confirms integrated ESD protection diodes between gate and source for both channels (labeled "Gate Protection Diode" in the internal schematic), rated for ±2kV HBM per JESD22-A114. No external gate resistors or TVS devices are required for typical handling and board-level ESD immunity.
DMC1030UFDB-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel Complementary
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 12V
- Current - Continuous Drain (Id) @ 25°C:
- 5.1A (Ta), 3.9A (Ta)
- Rds On (Max) @ Id, Vgs:
- 34mOhm @ 4.6A, 4.5V, 59mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12.2nC @ 4.5V, 13nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1003pF @ 6V, 1028pF @ 6V
- Power - Max:
- 1.36W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMC1030UFDB-13 FAQ
1.How can I place an order for DMC1030UFDB-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMC1030UFDB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMC1030UFDB-13 reliable?
The price and inventory of DMC1030UFDB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC1030UFDB-13 is usually 5 days.
3.What payment methods are accepted for DMC1030UFDB-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC1030UFDB-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMC1030UFDB-13?
DMC1030UFDB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMC1030UFDB-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMC1030UFDB-13?
For technical support, including DMC1030UFDB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC1030UFDB-13 requirements.
6.How does Aetrix verify that DMC1030UFDB-13 is sourced from the original manufacturer or authorized distributors?
All DMC1030UFDB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC1030UFDB-13 meets industry standards.
7.What is the process for return or replacement of DMC1030UFDB-13?
All DMC1030UFDB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC1030UFDB-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMC1030UFDB-13 part is unused and in its original packaging.
Return procedure for DMC1030UFDB-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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