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Diodes Incorporated DMC1030UFDB-7
- Part No.:
- DMC1030UFDB-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMC1030UFDB-7.pdf
- Description:
- MOSFET N/P-CH 12V 5.1A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,791
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Product details
Overview
DMC1030UFDB from Diodes Incorporated is a complementary-pair enhancement-mode MOSFET in a single U-DFN2020-6 (Type B) package, integrating an N-channel (12 V, 34 mΩ @ 4.5 V) and P-channel (-12 V, 59 mΩ @ -4.5 V) device for bidirectional power control. It delivers 5.1 A continuous drain current (N-ch) and -3.9 A (P-ch) at +25°C, with low input capacitance (1003 pF / 1028 pF) and ESD-protected gates-enabling compact, high-efficiency load switching in portable power adaptors and battery-powered systems.
For engineers reviewing the DMC1030UFDB datasheet, DMC1030UFDB pinout, DMC1030UFDB application, or DMC1030UFDB equivalent, this dual-channel MOSFET supports precise low-voltage logic-level drive (1.5 V–4.5 V), thermal stability up to +150°C junction temperature, and JEDEC-qualified reliability for industrial and consumer power management designs requiring space-constrained, dual-polarity switching.
Technical Context
This complementary pair operates with matched gate threshold voltages (±0.4 V to ±1.0 V), enabling symmetrical turn-on behavior under low-voltage biasing. Its integrated body diodes exhibit fast reverse recovery (7.6 ns N-ch, 31.6 ns P-ch) and low forward voltage (0.7 V / -0.7 V), supporting efficient synchronous rectification and bidirectional current handling.
The U-DFN2020-6 (Type B) package provides 18°C/W junction-to-case thermal resistance and 92°C/W junction-to-ambient (steady-state), optimized for PCB-mounted thermal dissipation on 1" × 1" FR-4 with 2 oz copper. Gate charge values (12.2 nC N-ch, 13 nC P-ch at rated VGS) are tuned for minimal switching loss in DC-DC converter and load-switch control loops.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 12 V (N-ch) / -12 V (P-ch): Supports 12 V rail switching with 20% margin against transients. |
| RDS(ON) max | 34 mΩ @ 4.5 V (N-ch), 59 mΩ @ -4.5 V (P-ch): Enables ≤170 mW conduction loss at 5 A. |
| ID max | 5.1 A (N-ch), -3.9 A (P-ch) at +25°C: Sustains full-load current in USB-C PD and PMIC output stages. |
| Ciss | 1003 pF (N-ch), 1028 pF (P-ch): Low input capacitance reduces gate drive power and speeds up switching. |
| tR/tF | 7.4 ns / 4.9 ns (N-ch), 12.8 ns / 25.4 ns (P-ch): Fast edge rates support >1 MHz PWM operation. |
| TJ range | -55°C to +150°C: Qualified for extended-temperature industrial and automotive-adjacent environments. |
| Qg | 12.2 nC (N-ch), 13 nC (P-ch) at rated VGS: Enables clean turn-on with standard 1 Ω gate resistor. |
Pinout & Package
U-DFN2020-6 (Type B) package: 2.0 mm × 2.0 mm footprint, 0.6 mm max height, NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | N-channel drain | Main current path for high-side or low-side N-MOSFET operation; thermally connected to exposed pad. |
| S1 | N-channel source | Reference node for N-ch gate drive; tied to system ground or floating node depending on topology. |
| G1 | N-channel gate | Logic-level input controlling N-ch conduction; ESD-protected, compatible with 1.5–4.5 V drive. |
| D2 | P-channel drain | Main current path for P-MOSFET; used as high-side switch or reverse-current blocking element. |
| S2 | P-channel source | Reference node for P-ch gate drive; typically tied to input rail in high-side configuration. |
| G2 | P-channel gate | Inverted logic input; driven low relative to S2 to enable conduction; ESD-protected. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary pairing | Matched VGS(th) polarity and magnitude enables coordinated bidirectional switching without external level-shifting. |
| Low-profile packaging | 0.6 mm max height allows integration into ultra-thin portable adapters and wearables with strict Z-height limits. |
| ESD-protected gates | Integrated gate protection diodes withstand ≥2 kV HBM, reducing layout sensitivity and eliminating external TVS in many cases. |
| Lead-free & green compliance | Halogen- and antimony-free, RoHS 3 compliant (≤900 ppm Br/Cl, ≤1000 ppm Sb), suitable for global eco-regulated markets. |
| JEDEC-qualified reliability | Qualified per AEC-Q standards for high-reliability applications, including thermal cycling and humidity testing. |
Applications
| USB-C Power Delivery Load Switch | Portable Battery Charger Output Stage |
|---|---|
|
Use Scenario: Bidirectional power path control between USB-C port and internal battery or system rail, supporting sink/source modes and overcurrent protection. IC Role / Device Role / Timing Role: Dual-MOSFET acts as active OR-ing switch and reverse-current blocker, replacing discrete N+P solutions. Use Value: 34 mΩ/59 mΩ RDS(ON) minimizes voltage drop across 5 A charging paths, preserving >97% efficiency at full load. |
Use Scenario: Output stage of a 5 V/3 A portable charger IC, managing connection to external devices while preventing backfeed during standby. IC Role / Device Role / Timing Role: P-channel high-side switch controls output enable; N-channel handles discharge path during fault shutdown. Use Value: Matched gate thresholds allow synchronized turn-off within 30 ns, eliminating shoot-through risk during mode transitions. |
| Industrial Sensor Node Power Sequencing | IoT Edge Device Rail Isolation |
|
Use Scenario: Controlled power-up sequence for multi-rail sensor subsystems (e.g., analog front-end, MCU, RF transceiver) in battery-operated condition monitoring units. IC Role / Device Role / Timing Role: Complementary pair implements independent enable/disable for 3.3 V and 1.8 V rails using shared logic-level control signals. Use Value: Low 1.5 V gate threshold enables direct interfacing with 1.8 V GPIOs, eliminating level translators and saving board area. |
Use Scenario: Isolating main system rail from peripheral modules (e.g., BLE radio, display) to reduce standby leakage and support rapid wake/sleep cycles. IC Role / Device Role / Timing Role: N-channel handles low-side disconnect; P-channel manages high-side isolation-both controlled by same microcontroller pin via inverter logic. Use Value: Total gate charge <26 nC ensures sub-microsecond switching, cutting transition losses to <100 nJ per event in 10 kHz duty-cycled operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LVT-7 | Higher RDS(ON) (48 mΩ N-ch / 72 mΩ P-ch @ 4.5 V), larger U-DFN2030-6 package (2.0 × 3.0 mm). | Better thermal performance (RθJA = 75°C/W) but requires more PCB area; suited for higher-current, lower-frequency use. | Select when >6 A continuous current or improved thermal headroom is required, and board space permits larger footprint. |
| DMC3025LSD-13 | Single-channel N+P pair in SO-8; higher RDS(ON) (25 mΩ / 40 mΩ), higher Ciss (1400 pF / 1500 pF), 1.75 mm height. | SO-8 simplifies hand-soldering and thermal vias; less suitable for ultra-thin designs but easier to probe and debug. | Choose for prototyping, low-volume production, or where manual assembly or test access outweighs size constraints. |
Compared with DMC2038LVT-7 and DMC3025LSD-13, DMC1030UFDB offers the smallest footprint and lowest gate charge among Diodes' complementary pairs, making it optimal for space- and speed-critical portable power designs-but trades off some thermal margin and ease of assembly.
Availability
DMC1030UFDB is available at Aetrix Electronics and suitable for USB-C power delivery load switches, portable battery charger output stages, industrial sensor node power sequencing, and IoT edge device rail isolation requiring stable component supply and consistent parametric performance across production lots.
Supply support for DMC1030UFDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal components, with design and manufacturing facilities certified to IATF 16949 and ISO 9001.
DMC1030UFDB belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, low-voltage power management in space-constrained consumer and industrial applications-emphasizing low RDS(ON), fast switching, and robust gate protection.
FAQ
What is the maximum allowable gate-source voltage for DMC1030UFDB?
The absolute maximum gate-source voltage is ±8 V for both N-channel and P-channel devices. Exceeding this rating-even transiently-risks permanent gate oxide damage. Designers must ensure gate drive circuits include clamping (e.g., Zener diodes) or limiting resistors to prevent overshoot during fast switching or ESD events.
Can DMC1030UFDB be used in a high-side P-channel configuration with 5 V logic control?
Yes: the P-channel's VGS(th) range of –0.4 V to –1.0 V allows reliable turn-on with 5 V logic referenced to its source. For example, driving G2 at 0 V while S2 is at 5 V yields VGS = –5 V-well above threshold-and achieves 59 mΩ RDS(ON). No level shifter is needed for standard 5 V microcontrollers.
How does the U-DFN2020-6 (Type B) package affect thermal performance in a typical 2-layer PCB layout?
On a 1" × 1" FR-4 board with 2 oz copper, the steady-state RθJA is 92°C/W. With proper thermal vias under the exposed pad and copper pour on inner layers, junction temperature rise stays below 60°C at 3 A continuous current-enabling reliable operation without heatsinks in most portable applications.
Is DMC1030UFDB qualified for automotive applications?
The standard DMC1030UFDB is not AEC-Q200 qualified. However, the automotive-grade variant DMC1030UFDBQ is available separately, manufactured in IATF 16949-certified facilities and qualified to AEC-Q101 stress tests-including temperature cycling, HTRB, and UIS-with full PPAP documentation support.
DMC1030UFDB-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel Complementary
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 12V
- Current - Continuous Drain (Id) @ 25°C:
- 5.1A (Ta), 3.9A (Ta)
- Rds On (Max) @ Id, Vgs:
- 34mOhm @ 4.6A, 4.5V, 59mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12.2nC @ 4.5V, 13nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1003pF @ 6V, 1028pF @ 6V
- Power - Max:
- 1.36W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMC1030UFDB-7 FAQ
1.How can I place an order for DMC1030UFDB-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMC1030UFDB-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMC1030UFDB-7 reliable?
The price and inventory of DMC1030UFDB-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC1030UFDB-7 is usually 5 days.
3.What payment methods are accepted for DMC1030UFDB-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC1030UFDB-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMC1030UFDB-7?
DMC1030UFDB-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMC1030UFDB-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMC1030UFDB-7?
For technical support, including DMC1030UFDB-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC1030UFDB-7 requirements.
6.How does Aetrix verify that DMC1030UFDB-7 is sourced from the original manufacturer or authorized distributors?
All DMC1030UFDB-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC1030UFDB-7 meets industry standards.
7.What is the process for return or replacement of DMC1030UFDB-7?
All DMC1030UFDB-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMC1030UFDB-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMC1030UFDB-7 part is unused and in its original packaging.
Return procedure for DMC1030UFDB-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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