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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMC1030UFDBQ-13

Name: DMC1030UFDBQ-13
Brand: Diodes Incorporated
SKU: DMC1030UFDBQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMC1030UFDBQ-13

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 6-UDFN Exposed Pad

Datasheet:: DMC1030UFDBQ-13.pdf

Description:: MOSFET N/P-CH 12V 5.1A 6UDFN

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Product details

Overview

DMC1030UFDBQ-13 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a U-DFN2020-6 (Type B) package, integrating an N-channel (12 V, 34 mΩ @ 4.5 V, 5.1 A) and P-channel (−12 V, 59 mΩ @ −4.5 V, −3.9 A) device for bidirectional power control. It supports automotive load switching and portable power adaptor applications with AEC-Q101 qualification, PPAP capability, and IATF 16949 manufacturing.

For engineers reviewing the DMC1030UFDBQ-13 datasheet, DMC1030UFDBQ-13 pinout, DMC1030UFDBQ-13 application, or DMC1030UFDBQ-13 equivalent, this dual-channel discrete solution delivers low R_DS(ON), fast switching (t_D(OFF) = 18.8 ns N-ch / 30.7 ns P-ch), ESD-protected gates, and thermal performance validated to −55°C to +150°C junction temperature.

Technical Context

This dual MOSFET implements independent N- and P-channel enhancement-mode transistors sharing a common U-DFN2020-6 substrate. The N-channel device features V_GS(TH) = 0.4–1.0 V and R_DS(ON) as low as 17 mΩ (typ) at V_GS = 4.5 V; the P-channel exhibits V_GS(TH) = −0.4 to −1.0 V and R_DS(ON) = 37 mΩ (typ) at V_GS = −4.5 V. Both channels support gate drive down to 1.5 V.

Dynamic performance includes C_iss = 1003 pF (N-ch) / 1028 pF (P-ch), Q_g = 12.2 nC (N-ch) / 13.0 nC (P-ch), and body diode t_RR = 7.6 ns (N-ch) / 31.6 ns (P-ch). Thermal resistance R_θJA is 92°C/W (steady-state) on 1" × 1" FR-4 with 2 oz copper.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	12 V (N-ch) / −12 V (P-ch): Supports 12 V automotive rail and dual-rail biasing without level shifters.
R_DS(ON) max	34 mΩ @ 4.5 V (N-ch), 59 mΩ @ −4.5 V (P-ch): Enables ≤0.17 W conduction loss at 5 A (N-ch) and ≤0.23 W at 3.9 A (P-ch).
I_D max	5.1 A (N-ch), −3.9 A (P-ch) at T_A = +25°C: Sufficient for medium-power load switches and USB-C PD adapters.
Q_g	12.2 nC (N-ch), 13.0 nC (P-ch) at rated V_GS: Allows efficient 1–2 MHz PWM operation with <1.3 W gate drive power at 1 MHz.
T_J range	−55°C to +150°C: Validated for under-hood automotive environments and industrial power stages.
Package	U-DFN2020-6 (Type B), 2.0 × 2.0 × 0.6 mm: Enables high-density PCB layout with exposed thermal pad for enhanced heat dissipation.
AEC-Q101	Qualified: Meets stress testing requirements for automotive electronics per JESD22-A108, including HTOL and TC.

Pinout & Package

U-DFN2020-6 (Type B) package with 0.65 mm pitch, 2.0 mm × 2.0 mm footprint, and 0.6 mm max height. Exposed thermal pad (Pin 6) enhances thermal performance. Molded green compound meets UL 94V-0 and RoHS 3 compliance.

Pin/Terminal	Circuit Role	Design Meaning
1 (D1)	N-channel drain	Main current path for high-side N-MOSFET; connects to input rail in high-side switch configuration.
2 (S1)	N-channel source	Reference node for N-ch gate drive; tied to load or ground depending on topology.
3 (G1)	N-channel gate	Control input for N-MOSFET; requires ≥1.5 V to turn on; ESD-protected (HBM >2 kV).
4 (D2)	P-channel drain	Main current path for low-side P-MOSFET; used in reverse-polarity protection or H-bridge half-bridge.
5 (S2)	P-channel source	Reference node for P-ch gate drive; typically connected to V_IN in high-side P-MOSFET configurations.
6 (EP)	Exposed thermal pad	Internally connected to die substrate; must be soldered to PCB copper pour for R_θJA optimization.

Key Features

Feature	Design Value
Complementary dual-channel integration	Single-package N+P pair eliminates layout mismatch, reduces board area by ~40% vs. discrete solutions.
Low R_DS(ON) at 1.5 V V_GS	N-ch: 70 mΩ, P-ch: 215 mΩ - enables operation from ultra-low-voltage logic or battery-backed controllers.
ESD-protected gate	HBM >2 kV rating per JEDEC JS-001 - reduces need for external transient suppression in automotive modules.
Low-profile 0.6 mm height	Enables use in space-constrained portable power adaptors and thin automotive ECUs without mechanical interference.
IATF 16949 manufacturing	Production traceability, PPAP documentation, and change control aligned with automotive quality management systems.

Applications

Automotive Load Switch

USB-C Power Delivery Adapter

Use Scenario: Controlling power to infotainment head units and ADAS sensors during vehicle ignition cycles.

IC Role / Device Role / Timing Role: Dual-channel load switch managing both high-side (N-ch) and reverse-polarity protection (P-ch) functions.

Use Value: AEC-Q101 qualification ensures reliability over 15-year vehicle life; low R_DS(ON) limits voltage drop to <60 mV at 5 A.

Use Scenario: Input stage of compact 65 W USB-C PD wall adapters requiring bidirectional power path control.

IC Role / Device Role / Timing Role: N-channel handles primary-side switching; P-channel enables synchronous rectification or output OR-ing.

Use Value: 1003/1028 pF C_iss and 12–13 nC Q_g support >500 kHz operation with minimal gate drive loss.

Industrial Motor Driver Half-Bridge

Portable Medical Device Power Sequencing

Use Scenario: Low-voltage (<15 V) brushed DC motor control in handheld diagnostic tools.

IC Role / Device Role / Timing Role: Complementary pair forms half-bridge output stage with integrated body diodes for freewheeling.

Use Value: t_D(OFF) = 18.8 ns (N-ch) / 30.7 ns (P-ch) enables precise dead-time control; SOA validated to 100 µs pulses.

Use Scenario: Sequenced power-up of analog front-end, microcontroller, and wireless transceiver in battery-powered patient monitors.

IC Role / Device Role / Timing Role: Independent N- and P-channel enable controlled ramp-up/down of multiple supply rails.

Use Value: Gate threshold stability (±0.2 V over −55°C to +150°C) ensures consistent turn-on timing across operating conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET pair applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMC2025UFDBQ	Higher V_DSS (20 V), higher R_DS(ON) (48 mΩ N-ch / 75 mΩ P-ch @ 4.5 V), same package.	Better suited for 19 V laptop adapters; less optimal for 12 V automotive due to higher conduction loss.	Select when system rail exceeds 15 V or higher avalanche energy (EAS = 12 mJ) is required.
DMC3025UFDBQ	30 V V_DSS, higher R_DS(ON) (65 mΩ N-ch / 105 mΩ P-ch @ 4.5 V), same footprint.	Targeted at 24 V industrial PLC I/O modules; not AEC-Q101 qualified.	Choose only for non-automotive 24 V systems where extended voltage margin outweighs efficiency penalty.

Compared with DMC2025UFDBQ and DMC3025UFDBQ, the DMC1030UFDBQ offers the lowest R_DS(ON) and AEC-Q101 qualification - making it the sole choice for thermally constrained, safety-critical 12 V automotive load switching where conduction loss and qualification are decisive.

Availability

DMC1030UFDBQ-13 is available at Aetrix Electronics and suitable for automotive load switches, USB-C power delivery adapters, and industrial motor driver half-bridges requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant sourcing.

Supply support for DMC1030UFDBQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DMC1030UFDBQ belongs to Diodes' automotive-qualified U-DFN power MOSFET family, engineered specifically for space-efficient, high-reliability power management in AEC-Q101-compliant vehicle subsystems.

FAQ

What is the maximum continuous drain current for each channel at +70°C ambient?

At T_A = +70°C, the N-channel supports 4.1 A and the P-channel supports −3.1 A under steady-state conditions. These values are derated from the +25°C ratings (5.1 A / −3.9 A) based on thermal resistance and package power dissipation limits of 1.36 W.

Does the DMC1030UFDBQ-13 require external gate resistors for automotive EMI compliance?

No external gate resistor is mandated, but a 1–5 Ω series resistor is recommended to dampen ringing from parasitic L_GS/C_iss resonance. The device's low Q_gd/Q_gs ratio (1.5/1.3 nC N-ch, 4.5/1.8 nC P-ch) inherently suppresses Miller-induced shoot-through in typical 12 V automotive gate drive circuits.

Can the exposed thermal pad (Pin 6) be left floating during PCB assembly?

No - the exposed pad must be soldered to a minimum 10 mm² copper pour connected to the system ground or thermal plane. Leaving it unconnected increases R_θJA by >35%, risking thermal shutdown at >2.5 W dissipation and violating JEDEC moisture sensitivity Level 1 reflow requirements.

Is the body diode of the P-channel MOSFET suitable for reverse-current blocking in hot-swap applications?

Yes - the P-channel body diode has V_SD = −0.7 to −1.2 V at −3.7 A and t_RR = 31.6 ns, enabling effective reverse-current blocking during hot-swap insertion. Its soft recovery characteristic minimizes voltage overshoot when interrupting inductive loads up to 10 µH.

DMC1030UFDBQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel Complementary

FET Feature:: -

Drain to Source Voltage (Vdss):: 12V

Current - Continuous Drain (Id) @ 25°C:: 5.1A

Rds On (Max) @ Id, Vgs:: 34mOhm @ 4.6A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23.1nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 1003pF @ 6V

Power - Max:: 1.36W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: U-DFN2020-6 (Type B)

DMC1030UFDBQ-13 FAQ

1.How can I place an order for DMC1030UFDBQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC1030UFDBQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC1030UFDBQ-13 reliable?

The price and inventory of DMC1030UFDBQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC1030UFDBQ-13 is usually 5 days.

3.What payment methods are accepted for DMC1030UFDBQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC1030UFDBQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC1030UFDBQ-13?

DMC1030UFDBQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC1030UFDBQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC1030UFDBQ-13?

For technical support, including DMC1030UFDBQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC1030UFDBQ-13 requirements.

6.How does Aetrix verify that DMC1030UFDBQ-13 is sourced from the original manufacturer or authorized distributors?

All DMC1030UFDBQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC1030UFDBQ-13 meets industry standards.

7.What is the process for return or replacement of DMC1030UFDBQ-13?

All DMC1030UFDBQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC1030UFDBQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC1030UFDBQ-13 part is unused and in its original packaging.

Return procedure for DMC1030UFDBQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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