Diodes Incorporated DMC10H172SSD-13

Overview

DMC10H172SSD from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single SO-8 package, integrating an N-channel (100V, 160mΩ @ 10V) and P-channel (−100V, 250mΩ @ −10V) device for bidirectional power control. It delivers 2.0A/−1.7A continuous drain current at +25°C, supports DC-DC converters and backlighting circuits, and features 100% production-tested UIS capability.

For engineers reviewing the DMC10H172SSD datasheet, DMC10H172SSD pinout, DMC10H172SSD application, or DMC10H172SSD equivalent, this dual MOSFET is selected for high-efficiency synchronous rectification, half-bridge switching, and compact dual-rail power management where low R_DS(ON), fast switching (t_F = 7.5ns/18ns), and thermal robustness (R_θJA = 80°C/W on enhanced pad) are critical.

Technical Context

This complementary pair uses planar trench-enhanced silicon technology to achieve matched threshold voltages (V_GS(TH) = 1–3V for Q1, −1.0 to −3.0V for Q2) and tightly coupled dynamic parameters-C_iss of 1145pF (N) and 1030pF (P) at 50V/−50V-enabling precise timing alignment in push-pull topologies. The integrated body diodes exhibit low V_SD (0.7–1.2V / −0.8 to −1.2V) and fast t_RR (19ns / 16ns), supporting high-frequency synchronous rectification without external Schottky devices.

Thermal design is enabled by dual R_θJA ratings: 110°C/W on minimal FR-4 and 80°C/W with 1-inch² copper, reflecting optimized thermal path layout guidance. Avalanche energy ratings (E_AS = 20mJ / 25mJ) and 100% UIS testing confirm ruggedness under inductive load transients common in motor drivers and LED boost stages.

Key Specifications

Pinout & Package

Package: SO-8, surface-mount, lead-free, halogen-free molded plastic (UL 94V-0), 0.074g mass, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Compared with DMC10H172SSD, DMC2038LSD-13 trades voltage headroom for lower conduction loss in sub-48V systems, while SI6926ADQ-T1-GE3 abandons true complementarity-increasing bill-of-materials count and layout complexity without improving thermal coupling or timing alignment.

Availability

DMC10H172SSD is available at Aetrix Electronics and suitable for DC-DC converters, LED backlighting, and industrial motor interface applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for DMC10H172SSD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.

The DMC10H172SSD belongs to Diodes' high-voltage complementary MOSFET product line, engineered specifically for space-constrained, high-efficiency power conversion in automotive infotainment, industrial automation, and consumer lighting systems.

FAQ

What is the maximum safe operating temperature for DMC10H172SSD?

The device has a specified junction temperature range of −55°C to +150°C. Under continuous operation with 1.5W dissipation on a 1-inch² copper pad (R_θJA = 80°C/W), junction temperature rises by 120°C above ambient-so maximum ambient must be limited to +30°C to stay within 150°C. Derating is required above +25°C ambient per Figure 25's transient curves.

Can DMC10H172SSD replace discrete N- and P-channel MOSFETs in an existing SO-8 layout?

Yes-the pinout matches standard SO-8 complementary dual packages (Pin 1 = Q1 drain, Pin 2 = Q1 source, Pin 3 = Q1 gate, Pin 4 = Q2 source, Pin 5 = Q2 gate, Pin 8 = Q2 drain). No PCB redesign is needed, though gate drive sequencing must respect the −3V to −10V requirement for Q2 versus +3V to +10V for Q1.

Does DMC10H172SSD meet AEC-Q101 requirements for automotive use?

No-this part is marked "ADVANCE INFORMATION" and not qualified to AEC-Q101. Diodes states that automotive-grade versions require specific change control, PPAP capability, and IATF 16949 manufacturing; users must contact Diodes directly for qualified alternatives such as the DMC10H172SSD-AE variant if automotive deployment is intended.

How does the body diode performance compare between the N- and P-channel sections?

The N-channel body diode has V_SD = 0.7–1.2V at 1.1A and t_RR = 19ns; the P-channel body diode has V_SD = −0.8 to −1.2V at −1A and t_RR = 16ns. Both are optimized for synchronous rectification, with the P-channel offering slightly faster recovery-critical for minimizing reverse recovery loss in low-side switching.